Passively Q-switched Nd:YAG pumped UV lasers at 280 and 374 nm

Pulsed UV lasers at the wavelengths of 374 and 280 nm are realized by cascaded second harmonic generation (SHG) and sum frequency generation (SFG) processes using a Nd:YAG laser at 1123 nm. The Nd:YAG laser is longitudinally pumped and passively Q-switched, and it has a high peak power of 3.2 kW. The UV peak powers at 280 and 374 nm are 100 and 310 W, with pulse lengths of 6 and 8 ns, respectively. Spectral broadening of 374 nm laser by stimulated Raman scattering is studied in single mode pure silica core UV fiber. Realizations of UV lasers enabling compact design at 280 and 374 nm wavelengths are demonstrated.     

An 8.1 W diode pumped solid-state quasi-continuous-wave yellow laser at 589 nm by intracavity sum-frequency mixing generation

We report an L-shaped symmetrical co-folding-arm plane-plane diode pumped solid-state yellow laser at 589 nm by using intracavity sum-frequency mixing. By carefully designing the cavity and employing various techniques to optimize the laser’s specifications, a quasi-continuous-wave (QCW) free-oscillation yellow laser source, which has an average output power of 8.1 W, a beam quality factor of M² = 2.3, and a repetition rate of 1.1 kHz, is developed. The generation of yellow laser at 589 nm is achieved by intracavity sum-frequency mixing between the laser lines at 1319 nm and 1064 nm of an Nd:YAG laser in a KTP crystal. To the best of our knowledge, the 8.1 W output at 589 nm is higher than any other diode pumped solid-state yellow laser generated by intracavity sum-frequency generation so far.     

Short pulse, high peak power, diode pumped, passively Q-switched 946 nm Nd:YAG laser

We report on generation of 946 nm laser pulses of a few nanosecond duration and up to 3.7 kW peak power from a compact diode-pumped passively Q-switched Nd:YAG laser. This power is 2.5 times as much as what previously has been obtained from this type of a laser. The short pulses with the record high peak power may be particularly attractive for laser range finding type applications.     

Q-switched and mode-locked diode-pumped Nd:YAG laser with an LT-GaAs

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained.     

Simultaneous dual-wavelength Q-switched Nd:YAG laser operating at 1.06 μm and 946 nm

Considering the reabsorption loss of the quasi-three level system and the unsaturable loss of the saturable absorber, we obtained the operating condition of a diode-pumped simultaneous dual-wavelength Q-switched Nd:YAG laser operating at 1.06 μm and 946 nm. The dual-wavelength pulsed laser was realized successfully through adaptive coating design of the cavity mirrors. As much as 1.6 W total average output power of the dual-wavelength at 1.06 μm and 946 nm was achieved at the incident pump power of 14.2 W with an optical conversion efficiency of 11.3%.     

Compact efficient diode-pumped Nd:YVO4 Q-switched blue laser with intracavity frequency tripling

We demonstrate a compact efficient diode-pumped acousto-optically Q-switched intracavity-frequency-tripled Nd:YVO₄ blue laser. The optimum polarization state is experimentally investigated to optimize the output performance. Greater than 280 mW of 447-nm average power at a repetition rate of 25 kHz was generated with a 15-W diode pump power. At 25 kHz, the pulse width is shorter than 15 ns and the peak power is higher than 800 W.     

Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm

We demonstrate a passively Q-switched Nd:LuVO₄ laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

Intra-cavity second harmonic generation with Nd:YVO4/BIBO laser at 542 nm

We report, for the first time, an efficient intra-cavity second-harmonic generation (SHG) at 1084 nm in a nonlinear optical crystal, BiB₃O₆(BIBO) at the direction of (θ, ?) = (170.1°, 90°), performed with a LD end-pumped cw Nd:YVO₄ laser. With 590 mW diode pump power, a continuous-wave (cw) SHG output power of 19 mW at 542 nm yellow-green color has been obtained using a 1.5 mm-thick BIBO crystal. The optical conversion efficiency was 3.22%. It was found that the output wavelength could be 532 nm, 537 nm or 542 nm according to regulating the angle of BIBO.     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

Intracavity optical parametric oscillator at 1572-nm wavelength pumped by passively Q-switched diode-pumped Nd:YAG laser

An intracavity optical parametric oscillator (IOPO) based on bulk KTP crystal was constructed with a Nd:YAG slab as an active medium pumped by a 300-W diode array and Cr:YAG as a passive Q-switch. A signal pulse of 1.9-mJ energy at 1572-nm wavelength was demonstrated. In the cavity, optimized with respect to single-pulse energy, a five-fold shortening of signal-pulse duration with respect to 1064-nm pump radiation was observed. A twice as large level of signal peak power of 650 kW, compared to the pump laser in the same cavity without the IOPO, was achieved. A conversion efficiency of 44% with respect to the 1064-nm pump beam and 3.8% with respect to diode pump energy was demonstrated. Received: 15 October 2002 / Revised version: 19 February 2003 / Published online: 16 April 2003 RID="*" ID="*"Corresponding author. Fax: +48-22/666-8950, E-mail: wzendzian@wat.edu.pl     

Intracavity frequency-tripling of actively mode-locked diode-pumped Nd:YAG laser

We report the first diode-pumped solid-state laser operating in cw-mode-locked regime and simultaneously achieving intracavity frequency-tripling. This laser provide UV picosecond pulses (λ=355 nm) of 10 ps duration with 0.5 mW average power at 150 MHz repetition rate. A different set of adjustments gave rise to a Q-switched mode-locked regime. Trains of hundred UV pulses of 60 ps duration and 4 W peak power were produced in this latter case at 50 kHz repetition rate. Received: 12 October 1998 / Revised version: 12 December 1998 / Published online: 26 May 1999     

Pulse compression in AO Q-switched diode-pumped Nd:GdVO4 laser with Cr4+:YAG saturable absorber

By simultaneously using both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber in the cavity, for the first time, a diode-pumped doubly Q-switched Nd:GdVO₄ laser has been realized. The pulse duration is obviously compressed in contrast to the actively acoustic-optic Q-switched laser. By considering the Gaussian transversal distribution of the intracavity photon density and the longitudinal distribution of the photon density along the cavity axis as well as the influence of turnoff time of the acoustic-optic (AO) Q-switch, we provide the coupled rate equations for a diode-pumped doubly Q-switched Nd:GdVO₄ laser with both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber. These coupled rate equations are solved numerically, and the dependence of pulse width, pulse energy and peak power on the incident pump power at different pulse repetition rates is obtained. The numerical solutions of equations agree well with the experimental results.This revised version was published online in August 2005 with a corrected cover date.     

Low threshold, actively Q-switched Nd:YVO4 self-Raman laser and frequency doubled 588 nm yellow laser

We reported an actively Q-switched, intracavity Nd³⁺:YVO₄ self-Raman laser at 1176 nm with low threshold and high efficiency. From the extracavity frequency doubling by use of LBO nonlinear crystal, over 3.5 mW, 588 nm yellow laser is achieved. The maximum Raman laser output at is 182 mW with 1.8 W incident pump power. The threshold is only 370 mW at a pulse repetition frequency of 5 kHz. The optical conversion efficiency from incident to the Raman laser is 10%, and 1.9% from Raman laser to the yellow.     

High power and high beam quality CW green beam generated by diode-side-pumped intracavity frequency doubled Nd:YAG laser

We report a stable high power and high beam quality diode-side-pumped CW green laser from intracavity frequency doubled Nd:YAG laser with LBO crystal. By using a advanced resonator, a large fundamental mode size in the laser crystal and a tight focus in the nonlinear crystal could be obtained simultaneously, which are favorable for high power and high beam quality CW green laser generation. The green laser delivered a maximum 532 nm output power of 40 W. The corresponding optical-to-optical conversion efficiency and electrical-to-optical conversion efficiency were 8.6% and 5.0%, respectively. Under 532 nm output power of 34 W, the beam quality factor was measured to be 1.6.     

Diode-pumped intra-cavity doubled Nd:LuVO4 laser at 458 nm

We have demonstrated a diode-pumped intra-cavity frequency doubling Nd:LuVO₄ laser operating at 916 nm with a Z-folded cavity. A 10-mm long LBO crystal, cut for critical type I phase matching at 912 nm, is used for the experiment. A maximum output power of 330 mW at 458 nm has been achieved at pump power of 22 W. The optical-to-optical conversion efficiency and slope efficiency is 1.5% and 2.3%, respectively. The power instability at the maximum output power in 30 min is better than 3%.     

41 mW high average power picosecond 177.3 nm laser by second-harmonic generation in KBBF

We report on the generation of high average power, high repetition rate, and picosecond (ps) deep-ultraviolet (DUV) 177.3 nm laser. The DUV laser is produced by second-harmonic generation of a frequency-tripled mode-locked Nd: YVO₄ laser (<15 ps, 80 MHz) with KBBF nonlinear crystal. The influence of different fundamental beam diameters on DUV output power and KBBF-SHG conversion efficiency are investigated. Under the 355 nm pump power of 7.5 W with beam diameter of 145 μm, 41 mW DUV output at 177.3 nm is obtained. To our knowledge, this is the highest average power for the 177.3 nm laser. Our results provide a power scaling by three times with respect to previous best works.     

Green-Beam Generation of 40W by Use of an Intracavity Frequency-Doubled Diode Side-Pumped Nd:YAG Laser

A cw diode side-pumped Nd：YAO laser is frequency doubled to 532nm with an intracavity KTP crystal in a Vshaped arrangement, achieving an output power of 40 W corresponding to an optical-optical conversion efficiency of 9.7%. The instabilities and the M2-parameters of the laser are measured at different output powers after the beam is filtered.     

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO₄ laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz.     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.