共查询到19条相似文献,搜索用时 171 毫秒
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介绍了一种广泛应用于离子刻蚀、预清洗和离子束辅助镀膜的阳极层离子源的工作原理,分析了磁场对其性能的影响。给出了线性阳极层离子源磁路的设计。采用ANSYS有限元分析软件对线性阳极层离子源的静态电磁场进行了模拟分析,并与实验结果进行了比较,结果令人满意。通过ANSYS编码对电磁场模拟,可为具体的阳极层离子源的改进设计提供指导。 相似文献
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为了解决现有光学塑料镜片表面易划伤、高温时容易发生膜裂的问题,选取机械性能稳定的Ti3O5、SiO2作为高、低折射率材料,依据光学薄膜理论,采用TFCalc软件设计膜系,通过电子束加热蒸发和离子源辅助沉积薄膜,在膜系的最外层用电阻加热法镀制防水膜。通过选择新材料SV-55作为连接层,增强了塑料镜片与膜层的附着力,解决了膜系与塑料镜片膨胀系数不匹配的问题,提高了塑料镜片的抗温能力。通过优化工艺参数,得到400 nm~700 nm反射率R≤1%的绿色减反膜。测试结果显示,研制的薄膜具有耐摩擦、抗老化、防水和防油污的特性。 相似文献
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冯毓材 《核聚变与等离子体物理》1986,(2)
本文提出了会切磁场多极离子源中,磁场对等离子体参数以及可引出离子束流和放电室阳极收集的离子电流影响的实验研究结果,并对该结果进行了分析讨论。 相似文献
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在中性束离子源引出过程中,详细分析了引出束流的产生,这有利于得到更准确的引出功率和引出电极表面的热功率沉积情况。根据HL-2A装置中性束离子源引出电极的电连接方式和束流引出的物理过程,对离子源束流引出过程进行了分析,给出抑制极电流产生的主要来源。通过分析放电气压扫描实验中的结果发现:随着放电气压的增加,不同弧放电电流情况下抑制极电流均逐渐增加,且抑制极电流与引出电流的比值近似线性增加。针对引出离子束流经过引出电极的过程建立了物理模型。计算了抑制极电流与引出电流的比值与放电气压的依赖关系,计算结果与实验结果一致,验证了引出束流分析结果的合理性。 相似文献
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随着大能量/高功率激光器的发展需求日益突出,光学薄膜的激光损伤阈值逐步成为激光器发展的瓶颈,受到国内外高能激光器研究领域的广泛关注。阐述了光学薄膜激光的损伤机理、激光损伤阈值测试平台及方法,结合自身研究成果,综述性分析了国内外光学薄膜抗激光损伤技术与手段研究的发展情况,主要包括离子束预处理、离子束与退火后处理、虚设保护层等;重点提出了磁过滤结合激光沉积的复合沉积技术,并建议加速推动无缺陷沉积的原子层沉积技术,为大幅提高光学薄膜抗激光损伤能力、满足当前需求提供了理论基础。 相似文献
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根据薄膜沉积过程等离子体对光学薄膜膜蒸气分子或原子的作用,建立低压等离子体离子镀设备,并对常规光学薄膜、如硫化物、氧化物薄膜以及多层膜器件进行了系统的研究,对所制备薄膜样品的透射光谱、吸收、散射以及膜层的聚集密度等进行了全面的测试分析。实验研究表明,低压等离子体离子镀可大大提高常规光学薄膜的光机性能。 相似文献
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本文简介了KLY-1低能宽束离子源的结构,给出了物理设计的主要公式和调试实验的结果。对于氩离子束,在离子能量为4keV,距引出电极24cm处的5cm直径的靶上,测得最大氩离子流为45mA,束流不均匀性优于±25%。 相似文献
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This work presents the characteristics of a high frequency ion source operating on a low energy, 150 keV accelerator. The
latter is to be used as a neutron generator and its design is based on a theoretical analysis which shows that if the axial
potential in an electrostatic electrode system is made to increase with four thirds the power of axial distance, inward electric
forces will compensate space charge forces tending to blow up the beam. This results in a simplified acceleration tube much
shorter and of higher gradient than the conventional acceleration columns. The ion source itself is an ordinary type using
axial extraction of the beam, and its main properties investigated are the beam current and beam quality (or emittance). Dependence
of the two on different parameters is investigated in a series of tests. 相似文献
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Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects
of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre
(NSC) for providing low and medium energy multiply charged ion beams ranging from a few keV to a few MeV for research in materials
sciences, atomic and molecular physics is described. One of the important features of this facility is the availability of
relatively large currents of multiply charged positive ions from an electron cyclotron resonance (ECR) source placed entirely
on a high voltage platform. All the electronic and vacuum systems related to the ECR source including 10 GHz ultra high frequency
(UHF) transmitter, high voltage power supplies for extractor and Einzel lens are placed on a high voltage platform. All the
equipments are controlled using a personal computer at ground potential through optical fibers for high voltage isolation.
Some of the experimental facilities available are also described. 相似文献
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等离子体源离子注入过程(PSII)中样品温度是一个非常重要的参量。由于注入到样品上的能量很大,导致样品温度很高,所以在实验中获知样品的温度分布有着很重要的意义。本文利用热传导方程建立了半圆形碗状样品内部温度升高模型,研究样品内温度演化过程。以注入离子束流作为能量输入项,热辐射为能量损失项,并考虑了热辐射过程中样品的形状因子的影响。考察了离子注入过程中样品上所施加负偏压的脉冲宽度和频率对样品温度分布的影响。研究结果显示,脉冲频率达到一定值后,样品温度不再随频率增加而升高。 相似文献
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分析了氘化锂与聚变DT等离子体的相互作用,采用蒙特卡罗方法计算了在密度500g/cm3、燃料半径100μm条件下的作用参数。结果表明:热斑加热的电子需要最小能量为4.65 MeV,氘离子需要的最小能量为122.83 MeV,沉积在热斑中的最大能量为34.43 MeV,锂离子最小能量为368.5 MeV;最小电流强度为1.15×107 A。电子、氘离子、锂离子在等离子体中沉积时间分别为0.07,0.49,0.64ps,均小于1ps。采用氘化锂作为加热粒子源,克服了其他单离子加热热斑的方法遇到的一些困难,是一种较好的方法。 相似文献
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The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation.For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:∼0.5 J, power density: 1010 W/cm2) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES. 相似文献
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Jian Leng Yuqiong Li Dongpu Zhang Xiaoyi Liao Wei Xue 《Applied Surface Science》2010,256(20):5832-5836
Y2O3 thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y2O3 films had less optical absorption, larger refractive index, and better film crystallinity with the increase of substrate temperature or ion energy. The as-deposited Y2O3 films without ion-beam bombardment had larger relative dielectric constant (?r) and the ?r decreased with time even over by 40%, while the ?r of films prepared with high ion energy had less changes, only less than 3%. Also, with the increase of ion energy, the electrical breakdown strength and the figure of merit increased. 相似文献
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等离子体源离子注入鞘层时空演化的研究 总被引:5,自引:0,他引:5
本文使用流体动力学模型,研究了平板、柱形和球形靶的无碰撞及碰撞等离子体鞘层的时空演化,得到了鞘层边界演化、靶表面的离子注入电流密度和离子注入平均动能等参量。 相似文献