Theoretical study of interaction between atoms of Au, Ag, Cu and clean Si(1 1 1) surface

To evaluate the interactions between the atoms of Au, Ag and Cu and clean Si(1 1 1) surface, two types of silicon clusters Si₄H₇ and Si₁₆H₂₀ together with their metal complexes were studied by using hybrid (U)B3LYP density functional theory method. Optimized geometries and energies on different adsorption sites indicate that: (1) the binding energies at different adsorption sites are large (ranging from 1.2 to 2.6 eV depend on the metal atoms and adsorption sites), suggesting a strong interaction between metal atom and silicon surface; (2) the most favorable adsorption site is the on top (T) site. Mulliken population analysis indicated that in the system of on top (T) site, a covalent bond is formed between metal atom and dangling bond of surface Si atom.     

Adsorption of NO on Au atoms and dimers supported on MgO(1 0 0): DFT studies

The adsorption of NO on single gold atoms and Au₂ dimers deposited on regular O²⁻ sites and neutral oxygen vacancies (F_s sites) of the MgO(1 0 0) surface have been studied by means of DFT calculations. For Au₁/MgO the adsorption of NO is stronger when the Au atom is supported on an anionic site than when it is on a F_s site, with adsorption binding energies of 1.1 and 0.5 eV, respectively. In the first case the spin density is mainly concentrated on the metal atom and protruding from the surface. In such a way, an active site against radicals such as NO is generated. On the F_s site, the presence of the vacancy delocalizes the spin into the substrate, weakening its coupling with NO. For Au₂/MgO, as this system has a closed-shell configuration, the NO molecules bonds weakly with Au₂. Regarding the N–O stretching frequencies, a very strong shift of 340–400 cm⁻¹ to lower frequencies is observed for Au₁/MgO in comparison with free NO.     

Study on the adsorption of fluorescein on Ag(1 1 0) substrate

The adsorption of fluorescein on the Ag(1 1 0) surface has been investigated by the first-principles pseudopotential method. Various adsorption geometries have been calculated and the energetically most favorable structure of fluorescein/Ag(1 1 0) was identified. The fluorescein molecule, in most favorable structure, is on hollow site, and the adsorption energy is 2.34 eV. Here the adsorption sites refer to the positions at the first layer of the substrate where the middle carbon atom of the fluorescein molecule is located. The bonding strength of the fluorescein molecule to the Ag substrate is site selective, being determined by electron transfer to the oxygen atoms of the molecule and local electrostatic attraction between the oxygen atoms and the silver atoms.     

RAS: An efficient probe to characterize Si(0 0 1)-(2 × 1) surfaces

A complete inspection of the capabilities of reflectance anisotropy spectroscopy (RAS) in studying the adsorption of molecules or atoms on the Si(0 0 1)-(2 × 1) surface is presented. First, a direct comparison between RA spectra recorded on the clean Si(0 0 1)-(2 × 1) and the corresponding topography of the surface obtained using scanning tunneling microscopy (STM) allows us to quantify the mixing of the two domains that are present on the surface. Characteristic RA spectra recorded for oxygen, hydrogen, water, ethylene, benzene are compared to try to elucidate the origin of the optical structures. Quantitative and qualitative information can be obtained with RAS on the kinetics of adsorption, by monitoring the RA signal at a given energy versus the dose of adsorbate; two examples are presented: H₂/Si(0 0 1) and C₆H₆/Si(0 0 1). Very different behaviours in the adsorption processes are observed, making of this technique a versatile tool for further investigations of kinetics.     

First-principles calculations of C diffusion through the surface and subsurface of Ag/Ni(1 0 0) and reconstructed Ag/Ni(1 0 0)

Density functional theory calculations are performed to investigate the C diffusion through the surface and subsurface of Ag/Ni(1 0 0) and reconstructed Ag/Ni(1 0 0). The calculated geometric parameters indicate the center of doped Ag is located above the Ni(1 0 0) surface owing to the size mismatch. The C binding on the alloy surface is substantially weakened, arising from the less attractive interaction between C and Ag atoms, while in the subsurface, the C adsorption is promoted as the Ag coverage is increased. The effect of substitutional Ag on the adsorption property of Ni(1 0 0) is rather short-range, which agrees well with the analysis of the projected density of states. Seven pathways are constructed to explore the C diffusion behavior on the bimetallic surface. Along the most kinetically favorable pathway, a C atom hops between two fourfold hollow sites via an adjacent octahedral site in the subsurface of reconstructed Ag/Ni(1 0 0). The “clock” reconstruction which tends to improve the surface mobility, is more favorable on the alloy surface because the c(2 × 2) symmetry is inherently broken by the Ag impurity. As a consequence, the local lattice strain induced by the C transport is effectively relieved by the Ag-enhanced surface mobility and the C diffusion barrier is lowered from 1.16 to 0.76 eV.     

Chemisorption of Au on Si（001） surface

The chemisorption of one monolayer of Au atoms on an ideal Si(001) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of the adsorption system of a Au atom on different sites are calculated. It is found that the most stable position is A site (top site) for the adsorbed Au atoms above the Si(001) surface. It is possible for the adsorbed Au atoms to sit below the Si(001) surface at the B_1 site(bridge site), resulting in a Au－Si mixed layer. This is in agreement with the experiment results. The layer projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated.     

Theoretical study on adsorption of thiophenethiolate molecule on Au(1 1 1) surface

We have theoretically studied the adsorption of a thiophenethiolate (C₄H₃S-S) molecule on the Au(1 1 1) surface by first-principles calculations. It is found that the bridge site is the most stable adsorption site with the adsorption energy of 1.02 eV. In the optimized adsorption geometry, the bond between the head S atom and the connected C atom in the tail thiophene molecule is tilted by 57.2° from the surface normal. In addition, the adsorption of thiophenethiolate induces large relaxations of the surface Au atoms around it. Furthermore, weak interactions between the S atom in the tail thiophene ring and the Au atoms also contribute to the adsorption on the Au surface.     

An effective Hamiltonian for sulfur adsorption at Au(1 0 0) surface

Adsorption of sulfur at the (1 0 0) surface of gold is analyzed with the help of the density functional theory (DFT). Potential energy surface for a single S atom at the Au(1 0 0) surface is computed and a simple analytical formula was found to reproduce the ab initio results to a good accuracy. Vibration frequencies of the adsorbed S atom are computed using the harmonic approximation and the contribution of zero-point motion to the adsorption energy is evaluated. The effects of surface Au atoms relaxation in the sulfur adsorption is analyzed. The interactions between S atoms adsorbed at the nearest and the next nearest equivalent adsorption sites are computed and used to define the effective Hamiltonian describing the interactions between the adsorbed sulfur atoms.     

Local Au coverage as driving force for Au induced faceting of vicinal Si(0 0 1): a LEEM and XPEEM study

Adsorption of Au at 850°C on a regular stepped 4° vicinal Si(0 0 1) surface results in a dramatic change of the step morphology: the surface decomposes into areas which are perfectly flat with a (0 0 1) orientation and (1 1 9) facets. Low energy electron microscopy shows the dynamics of the faceting process in real space while X-ray photoemission electron microscopy (XPEEM) allows a spatially resolved determination of the Au coverage at different stages of the faceting process. At a critical Au coverage of ≈1/3 ML (0 0 1) terraces are formed which extend anisotropically along the step edges of the surface. The steps in between the terraces bunch and form step bands in order to conserve the macroscopic miscut of the sample. Driving force for this morphological transformation is a complex (5×3.2) reconstruction formed on the (0 0 1) terraces. XPEEM shows this phase separation also for the Au coverage: on the (0 0 1) terraces the Au coverage is up to 40% higher compared to the step bands. With further increasing Au coverage the width of the Au rich terraces increases while the step bands become steeper. In a second step Au adsorbs on the step bands transforming them into well defined and smooth (1 1 9) facets.     

Au钝化Si(100)表面的电子特性

用TB-LMTO方法研究单层的Au原子在理想的Si(100)表面的化学吸附.计算了Au原子在不同位置的吸附能,吸附体系与清洁Si(100)表面的层投影态密度, 以及电子转移情况.结果表明, Au原子在吸附面上方的A位(顶位)吸附最稳定, Au钝化Si(100)表面可以取得明显的钝化效果, 这一结论与实验事实相符合.     

The interaction of carbon with Si(1 1 1):As and Si(1 1 1):H surfaces, a theoretical study

Density functional theory calculations have been performed to determine the adsorption site of carbon at the Si(1 1 1):As and Si(1 1 1):H surfaces at different coverages. The As- and H-passivated surfaces were simulated by replacing the topmost Si layer by As or by saturating the Si dangling bonds with hydrogen atoms, respectively. Different high symmetry sites were considered. Carbon was placed successively in the fourfold (T₄) or threefold coordinated (H₃), the ontop (T₁) sites or substituted for a Si atom in the S₅ position located underneath the Si adatom in the T₄ site. We found that the preferred carbon adsorption site depends on the coverage of the passivated surfaces. At low coverages i.e. at 1/16 ML and 1/3 ML, it prefers a distorted T₄ position whereas at 1 ML, it occupies an H₃ site. This contrasts with the clean surface where the most energetically favored site is the S₅ at all coverages. Carbon adsorption induces a significant change in the structural geometry of the surface atoms, leading to a charge re-arrangement in the surface layers.     

A first-principles surface phase diagram study for Si-adsorption processes on GaAs(1 1 1)A surfaces

The adsorption processes of an Si atom on GaAs(1 1 1)A surfaces under growth conditions are investigated on the basis of first-principles surface phase diagrams, in which adsorption-desorption behavior is described by comparing the calculated adsorption energy obtained by total-energy electronic-structure calculations with vapor-phase chemical potential estimated by quantum statistical mechanics. The calculated surface phase diagram as functions of temperature and As₂ pressure demonstrates that both Ga and As atoms are adsorbed on the Ga-vacancy site of GaAs(1 1 1)A-(2×2) surface under low As-pressure conditions, resulting in the formation of (2×2) surface with an As adatom. The surface phase diagrams as functions of temperature and Si pressure also reveal that an Si atom can be adsorbed on the (2×2) surface with an As adatom for temperatures less than ∼1160 K and this Si atom can occupy one of As-lattice sites after the incorporation of another As atom, leading to p-type conductivity. In contrast, the (2×2) surface with an As trimer is found to be stabilized under high As-pressure conditions. The surface phase diagram for Si incorporation clarify that an Si atom can be adsorbed at one of Ga-lattice sites of the (2×2) surface with an As trimer for temperatures less than ∼870 K. These calculated results provide one of possible explanations for the formation of p-type and n-type GaAs on GaAs(1 1 1)A surfaces under low and high As-pressure conditions, respectively.     

Adsorption of gold on hydrogen terminated Si(0 0 1): Formation of chain structure

Possible formation of stable Au atomic wire on the hydrogen terminated Si(0 0 1): 3×1 surface is investigated under the density functional formalism. The hydrogen terminated Si(0 0 1): 3×1 surface is patterned in two different ways by removing selective hydrogen atoms from the surface. The adsorption of Au on such surfaces is studied at different sub-monolayer coverages. At 4/9 monolayer (ML) coverage, zigzag continuous Au chains are found to be stable on the patterned hydrogen terminated Si(0 0 1): 3×1 surface. The reason for the stability of the wire structures at 4/9 ML coverage is explained. It is to be noted that beyond 4/9 ML coverage, the additional Au atoms may introduce clusters on the surface. The continuous atomic gold chains on the substrate may be useful for the fabrication of atomic scale devices.     

Structural properties and diffusion processes of the Cu3Au (0 0 1) surface

The surface relaxation and surface energy of both the mixed AuCu and pure Cu terminated Cu₃Au (0 0 1) surfaces are simulated and calculated by using the modified analytical embedded-atom method. We find that the mixed AuCu termination is energetically preferred over the pure Cu termination thereby the mono-vacancy diffusion is also investigated in the topmost few layers of the mixed AuCu terminated Cu₃Au (0 0 1) surface. In the mixed AuCu terminated surface the relaxed Au atoms are raised above Cu atoms for 0.13 Å in the topmost layer. All the surface atoms displace outwards, this effect occurs in the first three layers and changes the first two inter-layer spacing. For mono-vacancy migration in the first layer, the migration energies of Au and Cu mono-vacancy via two-type in-plane displace: the nearest neighbor jump (NNJ) and the second nearest neighbor jump (2NNJ), are calculated and the results show that the NNJ requires a much lower energy than 2NNJ. For the evolution of the energy requirements for successive nearest neighbor jumps (SNNJ) along three different paths: circularity, zigzag and beeline, we find that the circularity path is preferred over the other two paths due to its minimum energy barriers and final energies. In the second layer, the NN jumps in intra- and inter-layer of the Cu mono-vacancy are investigated. The calculated energy barriers and final energies show that the vacancy prefer jump up to a proximate Cu site. This replacement between the Cu vacancy in the second layer and Cu atom in the first layer is remunerative for the Au atoms enrichment in the topmost layer.     

Structural study of Si(1 1 1)-6 × 1-Ag surface using surface X-ray diffraction

The surface structure of Si(1 1 1)-6 × 1-Ag was investigated using surface X-ray diffraction techniques. By analyzing the CTR scattering intensities along 00 rod, the positions of the Ag and reconstructed Si atoms perpendicular to the surface were determined. The results agreed well with the HCC model proposed for a 3 × 1 structure induced by alkali-metals on a Si(1 1 1) substrate. The heights of the surface Ag and Si atoms did not move when the surface structure changed from Si(1 1 1)-√3 × √3-Ag to Si(1 1 1)-6 × 1-Ag by the desorption of the Ag atoms. From the GIXD measurement, the in-plane arrangement of the surface Ag atoms was determined. The results indicate that the Ag atoms move large distances at the phase transition between the 6 × 1 and 3 × 1 structures.     

Array of double Au-Ag chains on the Si(5 5 7) surface

Using scanning tunneling microscopy we study the topographic properties of Ag structure on the Au induced, highly ordered Si(5 5 7) surface. Topography measurements show that a small amount of Ag (0.25 ML) deposited on that surface leads to considerable modifications of the one-dimensional structure induced by Au atoms. In particular, we observe two different chains on each terrace, which are identified as Si adatoms and Ag chain structures. The STM topography of those chains strongly depends on the bias voltage, indicating an important role of electronic effects in this system.     

Simulations of germanium epitaxial growth on the silicon (1 0 0) surface incorporating intermixing

We present kinetic lattice Monte Carlo simulations of Ge deposition onto a reconstructed Si (1 0 0) surface. We account for the exchange of Ge with Si atoms in the substrate, considering two different exchange mechanisms: a dimer exchange mechanism whereby Ge–Ge dimers on the surface become intermixed with substrate Si atoms, and the exchange of Ge atoms below the surface to relieve misfit strain. We examine how Si–Ge exchange affects the interface between the materials when the growth simulations are done at different temperatures.     

Structural analysis of Si(1 1 1)-√21 × √21-Ag surface by reflection high-energy positron diffraction

The atomic structure of Si(1 1 1)-√21 × √21-Ag surface, which is formed by the adsorption of small amount of Ag atoms on the Si(1 1 1)-√3 × √3-Ag surface, was determined by using reflection high-energy positron diffraction. The rocking curve measured from the Si(1 1 1)-√21 × √21-Ag surface was analyzed by means of the intensity calculations based on the dynamical diffraction theory. The adatom height of the extra Ag atoms from the underlying Ag layer was determined to be 0.53 Å with a coverage of 0.14 ML, which corresponds to three atoms in the √21 × √21 unit cell. From the pattern analyses, the most appropriate adsorption sites of the extra Ag atoms were proposed.     

Direct decomposition of nitrogen monoxide over a K-deposited Co(0 0 0 1) surface: Comparison to K-doped cobalt oxide catalysts

The influence of deposited potassium on the oxidation and NO reactivity of a Co(0 0 0 1) surface was studied using X-ray photoelectron spectroscopy. The formation of surface CoO was observed when the clean Co(0 0 0 1) surface was exposed to O₂ at 500 K. In contrast, the Co atoms on the K-deposited Co(0 0 0 1) surface remained at a lower oxidation state, CoO_x (0 < x < 1). No adsorption or dissociation of NO occurred on the CoO/Co(0 0 0 1) surface at 320 K, whereas a NO₂⁻ species formed on the oxidized K/Co(0 0 0 1) surface. This species is considered to be an intermediate in NO decomposition. It was concluded that the role of potassium was (i) to form the NO₂⁻ intermediate, and (ii) to keep the Co surface partially oxidized (CoO_x) as the active site for the dissociation of the NO₂⁻ species.     

Tensor LEED analysis for the electrodeposited Pt(1 1 1)-(3×3)–Ag,I surface structure

A crystallographic analysis is reported using low-energy electron diffraction (LEED) in the tensor LEED approach for the electrodeposited coadsorption (3×3) structure with 4/9 monolayer (ML) of silver and 4/9 ML of iodine on the Pt(1 1 1) surface. The structure approximates a two-layer slice of bulk AgI cut parallel to its (1 1 1) plane and superimposed on the substrate with the Ag atoms in contact with the topmost Pt(1 1 1) layer, and the I atoms forming an overlayer on the Ag atoms. There are two types of Ag atoms in the (3×3) unit mesh; one type bonds to a single Pt atom, while the other type bonds to three Pt atoms. The average Ag–Pt bond distances are close to 2.48 and 2.82 Å respectively for the one and three-coordinate Ag atoms, but both types of Ag atoms bond to three I atoms with an average Ag–I distance of 2.67 Å. No significant corrugation is observed for either the I layer or the Ag layer.