便携式免散瞳带信标眼底相机光学系统

设计了一款便携式39°视场免散瞳眼底相机光学系统,可以对-10～+15m~(-1)屈光度变化范围内的人眼视网膜清晰成像。采用环形光源照明,使眼底视网膜照明均匀度达到95%,也很好地消除了角膜反射。加入的信标系统使得便携式眼底相机光学系统在拍摄时有助于保持人眼与成像系统的同轴度,进一步提高拍摄视网膜图像的清晰度。通过对成像系统的优化设计及仿真分析,得到均方根直径小于6.4μm、场曲小于60μm、像散小于50μm、畸变小于3.6%,在67lp/mm处各视场传递函数值大于0.5和成像系统加工良率高的眼底相机光学系统方案。方案可以应用于眼科检查,改善全国偏远地区眼科医疗器械缺少的情况。     

The development of an inspection system for defects in silicon crystal growth

This study presents an inspection system to detect the growth defects of silicon crystals that comprise a CCD camera, an LED light source, and power modulation. The defects on multicrystalline silicon can be observed clearly while the silicon wafer were irradiated by the red LED light at a small lighting angle (i.e., 20–30°). However, the growth defects on monocrystalline silicon wafer were difficult to observe because of it low image intensity. And then, the growth defects image was significantly enhanced when the wafer was illuminated by a white LED (WLED) and rotated at a specific angle (i.e., 23°). The experimental results showed that the WLED illumination system made the growth defects more easily observable than did other LED sources (i.e., red, blue, and green LEDs). In addition, the proposed inspection system can be used for on-line fast detection for quality control of monocrystalline silicon wafer.     

Calculation of the optical absorption between surface states of silicon

A detailed calculation of the optical absorption between surface states on silicon is reported and the results compared with the observed absorption. Actually the observations relate to the (111) surface whereas the calculations involved the better understood (110) surface, but arguments are advanced to suggest that similar results should be obtained for both and a simulated (111) calculation presented. A model, which accurately reproduces the results of complete theoretical calculations, is used to obtain the surface state energies throughout the two-dimensional Brillouin zone, and to obtain the momentum matrix elements at each k point by utilising the effective mass sum rule. The formation of a band gap between the surface state bands, arising from surface rearrangement, is incorporated into the model in a physically sensible manner. There is very good agreement in both shape and absolute magnitude between the calculated and observed absorption clearly indicating that the measured absorption does arise from surface states. The (1, 1, 0) calculations show large polarisation effects which should be observable on reconstructed (1, 1, 0) silicon surfaces or on the III–V compounds.     

Highly sensitive interferometric system for optical surface contouring

In the present work we demonstrate a highly sensitive system for optical surface contouring constructed by combining phase conjugation and digital phase shifting interferometry. The phase conjugating mirror in the modified phase conjugate Michelson interferometer is based on degenerate four wave mixing in a photorefractive BTO crystal. Digital phase shifting interferometry is used to decode the interference fringe pattern. An increase in sensitivity and high measurement accuracy are achieved through this new combination due to the interferometric scheme and the phase shifting. Experimental results are presented. The interferometric system is flexible and undergoes further improvement.     

自由曲面空间光学系统设计研究

对自由曲面的发展及应用做简要梳理,介绍国外自由曲面空间光学系统的研究现状,讨论3种自由曲面数理模型的特点和像差平衡能力,阐述自由曲面光学系统相对轴对称系统和平面对称系统的像差特点以及自由曲面空间光学系统的像差控制与评价方法,给出采用泽尼克多项式表述的自由曲面多光谱相机的设计结果,成像视场76,为远心光路设计,全视场调制传递函数（MTF）优于0.56,适用于空间多光谱成像。     

The role of surface terminations on the band structure and optical properties of silicon nanonets

The ab initio calculations are carried out to investigate the effect of hydrogen, oxygen and nitrogen terminations on the properties of the band edge and the values of the band-gap, as well as the oscillator strength of the silicon nanonets (SiNNs). The oxygen functional groups are found to effectively preserve the direct band-gap nature of the SiNNs, and even change the luminescence properties of the silicon nanowires (SiNWs) to the direct band-gap transition. The appreciable oscillator strength of the first direct transition is obtained for the oxygen terminated nanostructure. The study on the electronic states indicates that the variation of the band edge caused by the surface terminations is attributed to the change of the state compositions. These surface modifications are thought to be useful for silicon band-gap engineering in the area of optoelectronics.     

Experimental observation of optical bandgaps for surface electromagnetic waves in a periodically corrugated one-dimensional silicon nitride photonic crystal

Dispersion curves of surface electromagnetic waves (SEWs) in 1D silicon nitride photonic crystals having periodic surface corrugations are considered. We experimentally demonstrate that a bandgap for SEWs can be obtained by fabricating a polymeric grating on the multilayered structure. Close to the boundary of the first Brillouin zone connected to the grating, we observe the splitting of the SEW dispersion curve into two separate branches and identify two regions of very low group velocity. The proper design of the structure allows the two folded branches to lie beyond the light line in a wide spectral range, thus doubling the density of modes available for SEWs and avoiding light scattering.     

All-fibre optical system for exciting and detecting the vibration of silicon microresonator sensors

An all-fibre optical system for optical interrogation and detection of the vibrations of a silicon microresonator is reported. Metal-coated silicon microresonators are excited by intensity modulated laser light delivered through an optical fibre, while the vibration of the resonators is detected by an optical fibre interferometer. Measurements have shown that an average optical power of 10 μW is sufficient to maintain the flexural vibration of the resonator. When the resonator is used as a pressure sensor, its resonant frequency changes from 62 kHz to 130 kHz as the pressure varies from -0°6 bar to 1 bar (gauge). A silicon resonator with 700 nm aluminium coating functions as a temperature sensor, showing a frequency shift from 262 kHz to 251 kHz when the temperature changes from 25 °C to 80 °C.     

一种光学仪器镜面面形的处理方法

光学镜面表面变形包含刚体位移和表面畸变,其中表面畸变是影响成像质量的主要因素,因此需去除刚体位移,分析表面畸变。通过坐标变换生成一个新的理论镜面,用该镜面拟合变形镜面,用拟合镜面与变形镜面轴向差值计算出表面畸变的RMS值及PV值。实例计算表明该算法拟合精度较高,适用于抛物面、球面镜在支撑和装夹下的镜面面形精度分析。     

An integrated optical coupler used in a fibre interferometry system for on-line surface measurements

In this paper, an integrated optical (IO) coupler produced using the technique of silica-on-silicon was described. A fibre interferometry system using the IO coupler was then developed and its performance was tested. The environmental noise and disturbances in this system were reduced significantly after combining a reference interferometer and an all fibre polarisation scrambler so as to produce good stability and repeatability. Furthermore, the measurement mirror was mounted on a piezoelectric transducer (PZT) and disturbances were introduced in the system in order to simulate on-line surface measurements. Both a commercial fibre and the IO couplers were compared using this method. Better experimental results were achieved when the system using the IO coupler than using the fibre one.     

Influence of temperature-pressure treatment on heavily hydrogenated silicon surface

Microstructure and related properties of hydrogenated silicon samples, Si:H, treated at high-temperature (HT) up to 1270 K under hydrostatic argon pressure (HP) up to 1.1 GPa are investigated. To prepare Si:H, Czochralski grown 0 0 1 oriented single crystalline Si wafer with 50 nm thick surface SiO₂ layer was heavily implanted with hydrogen using the immersion plasma source of hydrogen ions with energy 24 keV.The surface of HT-HP treated Si:H was characterised by scanning electron microscopy. Reflectivity pattern measurements in the wavelength range of 350-2000 nm have been performed to analyse their surface and bulk properties. The volume averaging method for a model of layer-like structure has been used to simulate the HT-HP treated Si:H. The analysis of Si:H samples suggests the multi-layer structure composed of Si, Si:H, SiO, SiO₂, and of porous Si layers in the sub-surface region. The porous Si:H samples model is in good consistency with experimental data from reflectance measurements.     

大口径精密表面疵病的数字化检测系统

根据散射光成像原理,采用大小两个视场来获取不同精度的暗背景下的亮疵病图像,设计了完整的数字化表面疵病检测系统。该系统采用多区域自适应阈值分割算法对图像进行分割,然后采用基于等价归并标记方法快速提取疵病的特征参数,最后利用BP神经网络对疵病进行分类。实验结果表明该方法既满足实时性需求,又取得了较好的分类检测效果。     

大口径精密表面疵病的数字化检测系统

 根据散射光成像原理,采用大小两个视场来获取不同精度的暗背景下的亮疵病图像,设计了完整的数字化表面疵病检测系统。该系统采用多区域自适应阈值分割算法对图像进行分割,然后采用基于等价归并标记方法快速提取疵病的特征参数,最后利用BP神经网络对疵病进行分类。实验结果表明该方法既满足实时性需求,又取得了较好的分类检测效果。     

New mechanism for positronium formation on a silicon surface

We describe experiments in which positronium (Ps) is emitted from the surface of p-doped Si(100), following positron implantation. The observed emission rate is proportional to a Boltzmann factor exp{-E(A)/kT}, which is dependent on the temperature T of the sample and a characteristic energy E(A)=(0.253±0.004) eV. Surprisingly, however, the Ps emission energy has a constant value of ～0.16 eV, much greater than kT. This observation suggests the spontaneous emission of energetic Ps from a short-lived metastable state that becomes thermally accessible to available surface electrons once the positron is present. A likely candidate for this entity is an electron-positron state analogous to the surface exciton observed on p-Si(100) c(4×2) by Weinelt et al. [Phys. Rev. Lett. 92, 126801 (2004)].     

硅V型槽表面形貌的OCT可视化测量

介绍了一种硅V型槽表面形貌测量的可视化方法,分析了谱域OCT的测量原理。利用谱域OCT实验测量系统进行了硅V型槽的成像实验,得到了硅V型槽的二维层析图像;通过分析二维层析图像,获取了硅V型槽的结构尺寸,实现了硅V型槽表面形貌的高精度可视化测量。     

The mechanisms for optical bistability in a two-photon resonant system

The categories of optical bistability within a nondegenerate two-beam, two-photon resonant system are presented and discussed.     

Rapid optical measurement of surface texturing result of crystalline silicon wafers for high efficiency solar cells application

Surface texturing of crystalline silicon (c-Si wafers) wafers is a frequently used technique in high efficiency solar cells processing to reduce the light reflectance. Measuring the surface texturing result is important in the manufacturing process of high efficiency solar cells because the surface texturing of c-Si wafers is sensitive to the performance of reducing front reflection. Traditional approach for measuring surface roughness of texturing of c-Si wafers is atomic force microscopy. The disadvantage of this approach include long lead-time and slow measurement speed. To solve this problem, an optical inspection system for rapid measuring the surface roughness of texturing of c-Si wafers is proposed in this study. It is found that the incident angle of 60° is a good candidate for measuring surface roughness of texturing of c-Si wafers and y = ?188.62x + 70.987 is a trend equation for predicting the surface roughness of texturing of c-Si wafers. Roughness average (Ra) of texturing of c-Si wafers (y) can be directly determined from the peak power density (x) using the optical inspection system developed. The results were verified by atomic force microscopy. The measurement error of the optical inspection system developed is approximately 0.89%. The saving in inspection time of the surface roughness of texturing of c-Si wafers is up to 87.5%.