TiO2微粒对远程荧光粉膜及白光发光二极管器件光色性能的影响

利用热压法将TiO₂微粒掺入至YAG:Ce荧光粉和硅树脂中制备出远程荧光粉膜并封装成白光发光二极管(LED)器件, 通过荧光粉相对亮度仪、双积分球测试系统和可见光光谱分析系统对样品的光色性能及机理进行了研究. 结果表明: TiO₂的散射效应能够显著提高蓝光的利用率和黄光的透射强度, 白光LED器件的光通量在TiO₂浓度为0.966 g/cm³ 时达到最高值415.28 lm(@300 mA, 9.3 V), 提高了8.15%, 相关色温从冷白6900 K逐渐变化至暖白3832 K. TiO₂的掺入不仅提高了远程荧光粉膜的发射强度和白光LED器件的光通量, 同时能调控其相关色温.     

Improvement of electroluminescent property of blue LED coated with highly luminescent yellow-emitting phosphors

White light-emitting diodes (WLEDs) were fabricated by combining InGaN-based blue light-emitting diodes (LEDs) with highly luminescent Tb₃Al₅O₁₂:Ce³⁺ (TAG:Ce), Y₃Al₅O₁₂:Ce³⁺ (YAG:Ce), and Sr₃SiO₅:Eu²⁺ (SS:Eu). The TAG:Ce-based WLED showed a color rendering index (R _a ) of 79 and a luminous efficiency (η _L ) of 34.1 lm/W at 20 mA. The YAG:Ce-based WLED and the SS:Eu-based WLED showed low R _a values of 75 and 57 but high luminous efficiency values of 38.9 and 41.3 lm/W at 20 mA, respectively. When a mixture of YAG:Ce and SS:Eu was coated on a blue LED and the resultant WLED operated at 20 mA, the WLED showed a highly bright white light similar to daylight (η _L =40.9 lm/W, color temperature T _c =5,716 K, and R _a =76). Moreover, the WLED showed stable color coordinates against a considerable variation of applied current.     

Influence of pH on microstructural and optical properties of electrosynthesized CdSe thin films

Cadmium selenide (CdSe) thin films were electrosynthesized onto well cleaned stainless steel and fluorine-doped tin oxide (FTO) coated glass (10-15 Ω/cm²) substrates at different pH of the electrolytic solution. X-ray diffraction study reveals a cubic structure with preferential orientation along the (1 1 1) direction. The structural parameters such as grain size (D), lattice constant (a), strain (ε), dislocation density (δ), average internal stress (S) and degree of preferred orientation (I₁₁₀/I₂₂₀) in the film are calculated and they are found to be dependent on the pH of the depositing bath. EDAX analysis confirms nearly stoichiometric composition of the film deposited at pH 2.70. AFM analysis shows uniform deposition of the film over the entire substrate surface. In optical studies, the transition of the deposited film is found to be a direct allowed transition. The optical energy gaps are found to be in the range from 1.87 to 2.04 eV depending on the pH of the depositing bath. Photoluminescence (PL) spectrum shows blue shift in PL peak position and reduction in luminescence intensity for the film deposited at pH other than 2.70.     

Surface enhanced Raman scattering of light by ZnO nanostructures

Raman scattering (including nonresonant, resonant, and surface enhanced scattering) of light by optical and surface phonons of ZnO nanocrystals and nanorods has been investigated. It has been found that the nonresonant and resonant Raman scattering spectra of the nanostructures exhibit typical vibrational modes, E ₂(high) and A ₁(LO), respectively, which are allowed by the selection rules. The deposition of silver nanoclusters on the surface of nanostructures leads either to an abrupt increase in the intensity (by a factor of 10³) of Raman scattering of light by surface optical phonons or to the appearance of new surface modes, which indicates the observation of the phenomenon of surface enhanced Raman light scattering. It has been demonstrated that the frequencies of surface optical phonon modes of the studied nanostructures are in good agreement with the theoretical values obtained from calculations performed within the effective dielectric function model.     

A new‐generation color converter for high‐power white LED: transparent Ce3+:YAG phosphor‐in‐glass

Currently, the major commercial white light‐emitting diode (WLED) is the phosphor‐converted LED made of the InGaN blue‐emitting chip and the Ce³⁺:Y₃Al₅O₁₂ (Ce:YAG) yellow phosphor dispersed in organic epoxy resin or silicone. However, the organic binder in high‐power WLED may age easily and turn yellow due to the accumulated heat emitted from the chip, which adversely affects the WLED properties such as luminous efficacy and color coordination, and therefore reduces its long‐term reliability as well as lifetime. Herein, an innovative luminescent material: transparent Ce:YAG phosphor‐in‐glass (PiG) inorganic color converter, is developed to replace the conventional resin/silicone‐based phosphor converter for the construction of high‐power WLED. The PiG‐based WLED exhibits not only excellent heat‐resistance and humidity‐resistance characteristics, but also superior optical performances with a luminous efficacy of 124 lm/W, a correlated color temperature of 6674 K and a color rendering index of 70. This easy fabrication, low‐cost and long‐lifetime WLED is expected to be a new‐generation indoor/outdoor high‐power lighting source.     

White light emission from blue and near ultraviolet light-emitting diodes precoated with a Sr3SiO5:Ce3+,Li+ phosphor

White-light-emitting diodes (WLEDs) were fabricated by combining a yellow Sr3SiO5:Ce3+, Li+ phosphor with a blue light-emitting diode (LED) (460 nm chip) or a near ultraviolet (n-UV) LED (405 nm chip), respectively. Color temperature (Tc) of Sr3SiO5:Ce3+, Li+-based WLEDs could be tuned from 6500 to 100,000 K (blue LED pumping) and from 4900 to 50,000 K (n-UV LED pumping) without mixing with other phosphors. The blue LED-pumped WLED showed excellent white light (luminous efficiency=31.7 lm/W, Tc=6857 K) at 20 mA. This WLED showed a stable color coordinates property against an increase of the forward current. An n-UV LED-pumped WLED also showed bright white light (25.0 lm/W, 5784 K) at 20 mA.     

A study of the VUV emission from highly ionized krypton in a theta pinch plasma

The ionization rates of Kr(IX), (X), (XI), and (XII) have been measured using a fast 60-kV-60kJ theta pinch as a plasma source. The line emission from each ion stage has been identified and the time evolution observed. A coupled set of rate equations was used along with time- and space-resolved measurements of the electron density and temperature to model the plasma light emission. The ionization rates of Kunze were adjusted by multiplying the rate for each ion stage with a constant until the peak intensity of the calculated emission agreed with the time of the observed peak intensity. The constants required for best fit were 2.5, 0.15, 3.0, and 2.0 for Kr(IX), (X), (XI), and (XII), respectively. Two successive ionization stages, Kr(X) and Kr(XI), have shown the same time dependence and possible reasons for this observation are discussed. During the course of modeling the light emission, we have also found that the rate for the excitation from the 3dⁿ to the 3p⁵3dⁿ⁺¹ level in Kr(X) (n=9) and Kr(XI) (n=8) is a factor of 5 lower than predicted by the van Regemorter excitation rate equation.     

CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals

Electroluminescence (EL) from Al-rich AlN thin films grown on p-type Si substrate by radio frequency (RF) magnetron sputtering has been observed at room temperature. The light-emitting structure based on the thin films can be driven by an electrical pulse as short as 10⁻⁵ s. No obvious change in the light emission intensity was observed after 10⁶ pulse cycles. It has been found that the light emission intensity increases with the Al concentration. It is shown that the phenomenon is due to the enhancement of the percolative conduction via the Al nanocrystals distributed in the AlN matrix as a result of the increase in Al concentration.     

The impact of light polarization on imaging visibility of Nth-order intensity correlation with thermal light

The relationship between the imaging visibility of arbitrary Nth-order intensity correlation with thermal light and light’s degree of polarization is investigated. It is shown that for the same order correlation, the value of visibility with partially polarized light is greater than that with natural light but smaller than that with completely polarized light, and the visibility in all three cases is remarkably enhanced as N increases.     

Numerical Study on Efficient Optical Switching Based on the Nonlinear Phenomenon in a Guided-Mode Resonant Grating with Kerr Medium

Optical switching in a guided-mode resonant grating (GMRG) with a Kerr medium was numerically simulated by the nonlinear finite differential time domain (FDTD) method. The asymmetric resonant grating was adopted to have two resonant reflection peaks for the pump light and the probe light. When the pump light had a wavelength which was slightly longer than the resonant wavelength, the light was suddenly enhanced at a certain intensity because of the nonlinear resonance phenomenon. This resonance is effective in reducing the pump intensity for optical switching. When we assumed the resonant grating of polydiacetylene toluene sulphonate (PTS) with a linear refractive index of 1.88, a third-order susceptibility of 8.5 × 10⊃−0 esu and Q factors of resonant reflection which were ∼800, the pump light of 15 kW/mm⊃ changed transmittance of the probe light from 0 to 80%. 2005 The Optical Society of Japan     

Irreducible U(3) tensor interactions in the symplectic collective model

The potential V(β, γ) of the Bohr-Mottelson and symplectic collective models is expressed as a linear combination of U(3) irreducible tensor operators in the symplectic enveloping algebra. This many-body collective potential is then projected onto the symplectic two-body tensor operators. The projected two-body potential is shown to give results similar to the many-body potential in ²⁰Ne. Hence, in the symplectic shell model, one has obtained a collective model with two-body forces.     

The development of an inspection system for defects in silicon crystal growth

This study presents an inspection system to detect the growth defects of silicon crystals that comprise a CCD camera, an LED light source, and power modulation. The defects on multicrystalline silicon can be observed clearly while the silicon wafer were irradiated by the red LED light at a small lighting angle (i.e., 20–30°). However, the growth defects on monocrystalline silicon wafer were difficult to observe because of it low image intensity. And then, the growth defects image was significantly enhanced when the wafer was illuminated by a white LED (WLED) and rotated at a specific angle (i.e., 23°). The experimental results showed that the WLED illumination system made the growth defects more easily observable than did other LED sources (i.e., red, blue, and green LEDs). In addition, the proposed inspection system can be used for on-line fast detection for quality control of monocrystalline silicon wafer.     

Excitation and ionization of sodium clusters by a strong electromagnetic field

This paper reports on a study of the excitation and ionization of small sodium clusters by femtosecond light pulses with a maximum intensity of 5×10¹²–1×10¹⁴ W/cm² and photon energy from 1 to 3 eV made in terms of the density functional theory and jellium model through direct numerical solution of the Kohn-Sham time-dependent equation. The dependence of the degree of ionization on the intensity, duration, and frequency of the light pulses, as well as on the cluster size, is studied. The efficiency of the processes is shown to be determined primarily by the field intensity rather than by the total pulse energy.     

全光谱照明LED中的蓝绿色荧光粉研究

采用高温固相法合成了BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉,在440~460 nm蓝光激发下,该荧光粉发射峰值波长488 nm的蓝绿色光。通过共掺杂微量Mg²⁺和Ge⁴⁺离子,BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉的热猝灭性能显著提升。在蓝光芯片激发下,使用BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉搭配Y₃（Al,Ga）₅O₁₂:Ce³⁺黄绿色荧光粉以及CaAlSiN₃:Eu²⁺红色荧光粉,可以封装色温6 500 K、显色指数Ra达到96.5、所有特殊显色指数R1~R15都大于90的全光谱白光LED。通过封装老化测试,Mg²⁺和Ge⁴⁺离子掺杂的BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉较未掺杂的荧光粉老化性能提升近1倍。     

Electrooptical properties of aqueous suspensions of nickel hydrosilicate nanotubes

We present the results of our investigations of electrooptical effects that occur as a result of light scattering by an aqueous polydisperse system the disperse phase of which consists of nickel hydrosilicate nanotubes with a chrysotile structure. Multilayer nanotubes were synthesized by the hydrothermal method and had the composition Ni₃Si₂O₅. The dimensions of nanotubes were as follows: the length was 0.1–1 μm or more, the outer diameter was 10–15 nm, and the inner diameter was 3 nm. We have studied relative changes in the intensities of light transmitted and scattered by the suspension that were caused by the orientation of nanotubes in an external electric field. Experiments have been performed at different directions of the linear polarization of the incident and scattered light, different scattering angles, and different degrees of orientation of nanotubes along the field. These measurements allowed us to determine the magnitude of electrooptical effects, such as the conservative dichroism, the light scattering, and the influence of the orientation of nanotubes in the field on the intensity and degree of depolarization of light scattered by them. Curves of free relaxation of electrooptical effects and their field dependences allowed us to determine the distributions of nanotubes and their aggregates in the colloid over lengths and polarizability anisotropy values. The dependences of the degree of depolarization of the scattered radiation on the scattering angle and the relaxation dependences of electrooptical effects allowed us to characterize the aggregation stability of nanotubes in water.     

The effect of external visible light on the breakdown voltage of a long discharge tube

The breakdown characteristics of a discharge tube with a configuration typical of gas-discharge light sources and electric-discharge lasers (a so-called “long discharge tube”) filled with argon or helium at a pressure of 1 Torr have been investigated. A breakdown has been implemented using positive and negative voltage pulses with a linear leading edge having a slope dU/dt ~ 10–10⁷ V/s. Visible light from an external source (halogen incandescent lamp) is found to affect the breakdown characteristics. The dependences of the dynamic breakdown voltage of the tube on dU/dt and on the incident light intensity are measured. The breakdown voltage is found to decrease under irradiation of the high-voltage anode of the tube in a wide range of dU/dt. A dependence of the effect magnitude on the light intensity and spectrum is obtained. Possible physical mechanisms of this phenomenon are discussed.     

Laser type of spectral narrowing in electroluminescent Si/SiO2superlattices prepared by low-pressure chemical vapour deposition

Si/ SiO₂superlattices were fabricated by low-pressure chemical vapour deposition. Superlattices of 75–150 nm layer pair thicknesses and having 1–8 layer pairs were investigated in order to evaluate their surface structure and electroluminescent properties. Atomic force microscopy (AFM) studies were performed in order to investigate the surface morphology of a thin SiO₂layer and to evaluate the sizes of polysilicon nanocrystals grown onto the top of it. The current–voltage characteristics and the electroluminescence spectra are also shown. We have observed a blueshift of over 200 nm in the electroluminescence peak wavelength by increasing the driving current. The change in the direction of the driving current through a sample changes the peak wavelength from the yellow to red region. In some samples, we could detect an exponential increase in light intensity in current densities near 100 mA per square millimeter. The increase in intensity is combined with a very prominent spectral narrowing of the electroluminescence spectra. The half width of this spectral peak was less than 5 nm. It is possible that we have observed for the first time a laser type of mechanism in semiconductor structures made solely of silicon and silicon dioxide.     

Giant Raman optical activity of the 128-cm-1 mode in α-quartz

The threshold intensity of stimulated Raman scattering along the c-axis in α-quartz was measured for the 128-cm^-1 optical lattice vibration as a function of pump laser polarization at T = 10 K. In a right-handed, optically active quartz crystal the Raman threshold intensity for left-handed, circularly polarized pump light was lower by a factor of about 1.5 than for right-handed, circularly polarized light. The difference in threshold intensity is discussed in terms of Raman optical activity.     

Enhanced Upconversion Luminescence of Erbium–Nitrogen-Doped Zinc Oxide Nano-Wires by Implantation of Ytterbium Ions

Erbium–nitrogen codoped zinc oxide nanowires of ytterbium-doped are prepared by thermal evaporation and ion implantation methods. Ytterbium ions are doped into nanowires at a fluence of (0, 1, 3, 5, and 9) × 10¹⁵ cm^?2. Microstructural and optical properties of specimen are investigated by X-ray diffractometer, absorption spectra, Raman, and upconversion photoluminescence examinations. Upconversion photoluminescence emissions at 550 nm and 660 nm are obtained under 980-nm light excitation. Both intensities of green and red peaks are enhanced by the introduction of ytterbium ions. When ytterbium ion fluence is 5 × 10¹⁵ cm^?2, light emission intensity reaches maximum value. The energy transfer and cross-relaxation processes are responsible for the change of emission intensity.     

基于色差分析的中国淡彩绘画保护性照明光源

为得到博物馆照明光源对中国传统淡彩绘画的色彩影响规律,并确定不同类型中国传统淡彩绘画的最低损害光源,以3种博物馆典型照明光源作为实验光源,分组照射中国传统淡彩绘画模型试件,对模型试件的CIE LAB色度数据进行周期性测量。基于实验数据计算不同周期色差变化值,并绘制色差随曝光量的周期性衰变曲线。进而对色差值变化数据进行回归分析,拟合得到不同光源对4种淡彩绘画颜料的相对影响函数公式,提出不同光源对各类型淡彩绘画的相对影响系数。结果表明：3种照明光源对工笔淡彩绘画的影响系数为K_金卤灯：K_卤钨灯：K_WLED=1.00：0.92：0.84;对小青绿淡彩绘画的影响系数为K_金卤灯：K_卤钨灯：K_WLED=2.05：1.71：1.65;对水墨淡彩绘画的影响系数为K_金卤灯：K_卤钨灯：K_WLED=1.17：0.94：0.91。在淡彩绘画照明保护性照明光源选择时,应选择RYGB型WLED光源。