Fundamental Soliton Compression due to Induced－phase－modulation in the Regime of Normal Group－velocity Dispersion

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Application of a Double－Wollaston－prism Laser Differential Interferometer in Plasma Focus

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The Experiment Study of Two Nd~（3＋）：p－glass Rods Laser with a Q－switch／mode－locking and Amplifier

ＴｈｅＥｘｐｅｒｉｍｅｎｔＳｔｕｄｙｏｆＴｗｏＮｄ￣（３＋）：ｐ－ｇｌａｓｓＲｏｄｓＬａｓｅｒｗｉｔｈａＱ－ｓｗｉｔｃｈ／ｍｏｄｅ－ｌｏｃｋｉｎｇａｎｄＡｍｐｌｉｆｉｅｒ￥ＲＥＮＺｈａｏｙｕ；ＺＨＵＡＮＧＤｏｕｎａｎ；ＬＥＩＳｈｉｚｈａｎ；ＹＵＧｕｉ...     

Generation of 2－10ns Excimer Laser Pulse by Optical Synchronizing Wave－clipping

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CRT－LCLV and photorefractive crystl BSO based real－time joint transform correlator

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Influence of Post－baking and Delaying Processes on Dichromated Holograms：Their Mechanism

ＩｎｆｌｕｅｎｃｅｏｆＰｏｓｔ－ｂａｋｉｎｇａｎｄＤｅｌａｙｉｎｇＰｒｏｃｅｓｓｅｓｏｎＤｉｃｈｒｏｍａｔｅｄＨｏｌｏｇｒａｍｓ：ＴｈｅｉｒＭｅｃｈａｎｉｓｍＷＡＮＧＧｕｏｐｉｎｇ（ＤｅｐａｒｔｍｅｎｔｏｆＰｈｙｓｉｃｓ，ＷｕｈａｎＵｎｉｖｅｒｓｉｔ...     

The Dynamic Behaviour Analysis of Up－Conversion Luminescence in ErP_5O_（14） Glass

ＴｈｅＤｙｎａｍｉｃＢｅｈａｖｉｏｕｒＡｎａｌｙｓｉｓｏｆＵｐ－ＣｏｎｖｅｒｓｉｏｎＬｕｍｉｎｅｓｃｅｎｃｅｉｎＥｒＰ_５Ｏ_（１４）ＧｌａｓｓＴｈｅＤｙｎａｍｉｃＢｅｈａｖｉｏｕｒＡｎａｌｙｓｉｓｏｆＵｐ－ＣｏｎｖｅｒｓｉｏｎＬｕｍｉｎｅｓｃｅｎｃｅ...     

A new approach for realizing the optical morphological dilation of 1－D gray images

Ａｎｅｗａｐｐｒｏａｃｈｆｏｒｒｅａｌｉｚｉｎｇｔｈｅｏｐｔｉｃａｌｍｏｒｐｈｏｌｏｇｉｃａｌｄｉｌａｔｉｏｎｏｆ１－ＤｇｒａｙｉｍａｇｅｓＨＵＡＮＧＧｕｏｌｉａｎｇ；ＪＩＮＧｕｏｆａｎ；ＷＵＭｉｎｘｉａｎ；ＹＡＮＹｉｎｇｂａｉ（Ｄｅｐｔ．ｏ，Ｐｒｅ...     

Two－Side Electron Beam Pumping System For Hundred－Joule－Level KrF Excimer Laser

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Soliton Transmission Using Actively Mode－locked Fiber Ring Laser at 2．5GHz and 5GHz

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顶部反射镜对GaN基共振腔发光二极管性能的影响研究

本文在Ga N基共振腔发光二极管(RCLED)顶部设计制备了高反膜结构分布式布拉格反射镜(DBR)和滤波器结构DBR,对比分析了两种反射镜的反射率曲线特征以及对应的RCLED器件的光输出纵模模式、光谱线宽和输出光强等性能差异,详细研究了顶部反射镜的光反射特性对RCLED器件输出光谱性能的影响机理.研究结果表明,顶部反射镜是RCLED的重要组成部分,其反射率曲线特征决定器件的光输出性能.常规高反膜结构DBR顶部反射镜的反射率曲线具有较宽的高反射带,将其作为顶部反射镜可有效压窄RCLED发光纵模线宽,但是发光光谱仍呈现多纵模光输出特征.滤波器结构DBR顶部反射镜的反射率曲线在中心波长处具有较窄的透光凹带,利用透光凹带对输出光的调制作用,器件可实现单纵模光输出,在光通信、光纤传感等领域展示了广阔的应用前景.通过进一步设计RCLED顶部反射镜结构,可以改变其反射率曲线特性,进而优化RCLED器件的输出光谱特性,以满足器件在多个领域的应用需求.     

Dual-wavelength distributed Bragg reflector semiconductor laser based on a composite resonant cavity

We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.     

Dual-wavelength distributed Bragg reflector semiconductor laser based on composite resonant cavity

We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.     

全介质镜微腔的结构设计与发光特性的模拟

设计了4种不同介质镜结构的全介质镜λ微腔,并模拟研究了腔内有机发光层的发光特性。结果表明,DBR结构的不同会导致腔镜反射相移的变化,从而最终改变了器件的透射光谱、腔内驻波电场分布、PL光谱峰值位置和强度等参数。只有合理的器件结构设计才能使腔内的发光得到有效的增强。对称偶数层DBR构成的λ腔可以使谐振峰位置的PL光谱峰值强度增加59倍。     

Integrated waveguide Fabry-Perot microcavities with silicon/air Bragg mirrors

We demonstrate in-plane microfabricated Fabry-Perot cavities with cryogenically etched silicon/air distributed Bragg reflector (DBR) mirrors and integrated silicon-on-insulator rib waveguides. Several DBR configurations and cavity lengths were measured. Various devices exhibit Q=26963, FWHM=0.060 nm, finesse F=489, free spectral range FSR=81.7 nm, and DBR mirror reflectance R=99.4%. Thermo-optic tuning over 6.7 nm is also demonstrated.     

氮化铌纳米线光学特性

氮化铌(NbN)纳米线是超导纳米线单光子探测器(SNSPD)常用的光敏材料,其光学性质是影响SNSPD性能的关键因素.本文结合实验数据和仿真结果,系统研究了多种NbN超导纳米线探测器器件结构的光学特性,表征了以下四种器件结构下的反射光谱以及透射光谱:1)双面热氧化硅衬底背面对光结构;2)双面SiN硅衬底背面对光结构;3)硅衬底上以金层+SiN缓冲层为反射镜的正面对光结构;4)以分布式布拉格反射镜(DBR)为衬底的正面对光结构.并在上述四种器件结构基础上,生长了不同厚度的NbN薄膜,观察不同厚度NbN薄膜的吸收效率.经分析,发现在不同器件结构下的最佳NbN厚度与光吸收率的关系如下:双面热氧化硅衬底上的NbN层在1606 nm处最大吸收率为91.7%,其余结构在最佳NbN厚度条件下吸收率都能达到99%以上.其中双面SiN的硅衬底结构中最大吸收率为99.3%, Au+SiN为99.8%, DBR为99.9%.最后,将DBR器件实测结果与仿真结果进行了差异性分析.这些结果对高效率SNSPD设计与研制具有指导意义.     

谐振腔提高横向光电效应的量子效率

根据位置敏感探测器的原理,设计了p-i-n型的谐振腔结构,研究谐振腔提高横向光电效应的量子效率。以一维缺陷光子晶体作为顶部光学镜,底部为分布式Bragg反射镜(DBR),中间为激活介质谐振腔。利用传输矩阵法计算了一维缺陷光子晶体的透射特性。由于顶部和底部结构的高反作用,一维缺陷光子晶体的透射谐振导模将被有效地限制在激活介质中。通过对谐振腔模型的分析,得出了激活介质的量子效率,并进行了数值仿真。结果表明,一维缺陷光子晶体的谐振导模能有效提高谐振腔中激活介质的量子转换效率。     

分布布喇格反射镜的反射特性

采用等效法布里珀罗(FP)腔方法对分布布喇格反射镜(DBR)的特性进行了研究,计算并讨论了上下两层DBR结构非对称模型反射率的变化.设计了DBR反射镜的反射谱中心波长为850nm的结构.随着DBR周期数的增加,腔反射率峰值逐渐增加.上下两层DBR反射镜的厚度由反射率和中心波长决定.实验表明,下DBR的周期数为30对左右,上DBR的周期数为20对左右,易实现激光输出.非对称的双层DBR的反射特性表明理论计算与实验结果基本一致.     

Designing an all epitaxial 1,550 nm intra-cavity VCSEL using GaInAsN/AlGaInAs in the active region and AlGaAsSb/AlAsSb in top and bottom DBRs

In this paper, a 1,550 nm Intracavity structure vertical cavity surface emitting laser (VCSEL) has been designed using quaternary compound QW/barrier materials of GaInAsN/AlGaInAs matched with InP substrate. This choice has been made instead of choosing widely used GaInAsP/InP and AlGaInAs/InP to gain some advantages. In addition to the introduction of new combination in the active region, a different compound semiconductor combination AlGaAsSb/AlAsSb has been used as the DBR material for achieving lattice matching and also for achieving higher refractive index contrast. Compared to widely used GaAs/AlGaAs DBR mirror system, which needed wafer fusion with the top and bottom sides of the active region at 1,550 nm, the chosen DBR of this design is advantageous. The active material compositions have been chosen to obtain a peak gain at 1,550 nm and all other compositions have been chosen to obtain close lattice match at the same time to obtain the desired bandgap at the desired layers. The end result of this design is a VCSEL based on InP substrate which is capable of producing 1,550 nm light output and which can be constructed using widely used epitaxial techniques because all of the layers are lattice matched.     

基于亚波长光栅的VCSEL偏振控制研究

为了确定亚波长光栅在微电机械系统(MEMS)波长可调谐VCSEL不同位置(上DBR上表面、上DBR下表面以及内腔)中实现TE和TM偏振控制的光栅参数范围以及光栅在哪个位置时实现偏振控制最稳定,通过MATLAB建立MEMS波长可调VCSEL的模型,然后计算光栅在3种位置时上反射镜(包括空气隙和光栅)随光栅参数变化的反射率,以此来确定它们实现TE/TM稳定偏振的光栅参数范围(即高反射范围内的参数)。将各自的高反射所对应反射率减去相同光栅参数范围内TM/TE低反射对应的反射率,通过反射率差值确定光栅在哪种位置时MEMS波长可调谐VCSEL实现偏振是最稳定的。最后得出的结论是光栅在上DBR下表面几乎无法控制TM偏振,而将光栅放置于内腔中,无论是在TE偏振控制上还是TM偏振上都是最稳定的。在实现TE偏振稳定的参数范围内,TE的阈值增益比TM最小少10 cm~(-1);而在实现TM偏振稳定时,在TE偏振稳定的参数范围内,TE的阈值增益比TM最小少5 cm~(-1)。