La0.7Sr0.3MnO3 film prepared by dc sputtering on silicon substrate: Effect of working pressure

La_0.7Sr_0.3MnO₃ films were prepared by dc sputtering on Si (100) substrate at different working pressure. The possibility of controlling the magnetic and transport properties of colossal magnetoresistance film is investigated, which has attracted great research interest for practical application. The as-grown film shows different magnetic, transport and magnetoresistance change at different working pressure at room temperature, which is quite attractive from technological point of view. Maximum magnetoresistance (MR) of ?5.56%, Curie temperature (T_c) of 325 K and metal insulator transition temperature (T_MI) of 278 K was achieved at room temperature.     

Temperature dependence of electroresistance for La0.67Ba0.33MnO3 manganite

The influence of dc biasing current on temperature dependence of resistance of La_0.67Ba_0.33MnO₃ bulk sample is reported. A decrease in the resistance (electroresistance) on the application of higher bias current is observed. The electroresistance is maximum at metal-insulator transition temperature (T_MI) and decreases when the temperature is either increased or decreased from T_MI. A two-phase model is proposed to explain the occurrence of electroresistance. The higher bias current leads to an increase in alignment of spins and thus, in turn, leads to an increase in spin stiffness coefficient and decrease in the resistance at T_MI.     

Epitaxial strain effects on the metal-insulator transition in V2O3 thin films

Effects of epitaxial stress on the metal-insulator transition of V₂O₃ have been studied for in the form of epitaxial thin films grown on α-Al₂O₃ (0001) and LiTaO₃ (0001) substrates. A metallic phase is stabilized down to 2 K in the V₂O₃ thin film on α-Al₂O₃ (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature T_MI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO₃ (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and T_MI in V₂O₃. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.     

Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

The La_1.32Sr_1.68Mn₂O₇ layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T_C) and a metal-insulator transition (T_MI) at 118 K in the ambient pressure. The applied pressure shifts the T_MI to higher temperature values and induces a second metal-insulator transition (T²_MI) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T_C. When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.     

La0.82Te0.18MnO3薄膜的输运特性和光诱导效应

用脉冲激光沉积法制备了非金属Te掺杂的钙钛矿锰氧化物La_0.82Te_0.18MnO₃单晶薄膜.该薄膜从83 K升温至373 K过程中发生金属-绝缘体相变，转变点温度为283 K.其电阻率在T<T_MI时符合电子-电子、电子-磁振子散射公式；在T>T_MI时为小极化子输运.薄膜在低温段连续激光(波长为532 nm，40 mW)作用下电阻率显著增大，电阻变化率在253 K达到最大值51.1%,该变化率远大于相同条件下的空穴掺杂材料；在高温段产生了较小的光电导，电阻变化率小于10%.这些现象主要与激光激励下自旋系统和小极化子的变化有关.La_0.82Te_0.18MnO₃薄膜在激光诱导下具有明显的与自旋相关的弛豫现象.激光开始作用时薄膜电阻率随时间的变化符合指数关系. 关键词： 0.82Te_0.18MnO₃薄膜')" href="#">La_0.82Te_0.18MnO₃薄膜 光诱导 输运特性 电子掺杂     

Electroresistive and magnetoresistive properties of Nd0.7Sr0.3MnO3 after quenching under pressure of 9 GPa

Polycrystalline Nd_0.7Sr_0.3MnO₃ was quenched from 1300 K to 300 K and 80 K after it had been subjected to a high quasihydrostatic pressure of 9 GPa. Such high pressure and high temperature treatment (HPT) results in significant changes of the crystallochemical parameters—Mn-O lengths and Mn-O-Mn angles within unchanged lattice symmetry of the Pnma-type. A strong increase of the resistivity and a large decrease of the FM-PI transition temperature were detected for the Nd_0.7Sr_0.3MnO₃ HPT treated samples. The intrinsic characteristic T_MI(T_C) (T_MI is the metal-insulator and T_C is the ferromagnetic-paramagnetic transition temperature) correlates with the change of the Mn-O(1)-Mn angle, which is consistent with the double exchange model of the ferromagnetic metallic state in manganites. Remarkable electroresistive (ER) and magnetoresistive (MR) effects appear after HPT treatment, which were not present in the starting Nd_0.7Sr_0.3MnO₃ sample. The structure sensitive properties such as resistivity, MR and ER effects correlate with the change of the nanograin sizes after HPT treatment. Nonlinear current-voltage characteristics showing a hysteresis appear for HPT treated samples at low temperatures. The transport in granular Nd_0.7Sr_0.3MnO₃ samples is likely defined by spin-dependent scattering of charge carriers inside the ferromagnetic metallic grains with embedded small charged isolating islands and by jumping over charged insulating barriers at the intergrain boundaries, which can be strongly affected by the external electric and magnetic fields.     

Electrical conductivity and low field magnetoresistance in polycrystalline La1−xKxMnO3 pellets prepared by pyrophoric method

Electrical conductivity and magnetoresistance of a series of monovalent (K) doped La_1−xK_xMnO₃ polycrystalline pellets prepared by pyrophoric method have been reported. K doping increases the conductivity as well as the Curie temperature (T_C) of the system. Curie temperature increases from 260 to 309 K with increasing K content. Above the metal-insulator transition temperature (T>T_MI), the electrical resistivity is dominated by adiabatic polaronic model, while in the ferromagnetic region (50<T<T_MI), the resistivity is governed by several electron scattering processes. Based on a scenario that the doped manganites consist of phase separated ferromagnetic metallic and paramagnetic insulating regions, all the features of the temperature variation of the resistivity between ∼50 and 300 K are described very well by a single expression. All the K doped samples clearly display the existence of strongly field dependent resistivity minimum close to ∼30 K. Charge carrier tunneling between antiferromagnetically coupled grains explains fairly well the resistivity minimum in monovalent (K) doped lanthanum manganites. Field dependence of magnetoresistance at various temperatures below T_C is accounted fairly well by a phenomenological model based on spin polarized tunneling at the grain boundaries. The contributions from the intrinsic part arising from DE mechanism, as well as, the part originating from intergrannular spin polarized tunneling are also estimated.     

Low temperature electrical transport in Ag substituted LaMnO3 polycrystalline pellets prepared by a pyrophoric method

A detailed investigation of the electrical resistivity of a series of monovalent (Ag) doped polycrystalline La_1−xAg_xMnO₃ pellets with x ranging from 0.05 to 0.30 and measured over the temperature range between 10 and 350 K is reported. La_1−xAg_xMnO₃ compounds have been prepared by a novel pyrophoric technique. XRD analysis of our samples indicates single phasic nature for samples with Ag content ≤0.15, while samples with higher Ag content (x≥0.2) show presence of both magnetic perovskite and non-magnetic Ag phases. A sharp insulator-metal transition with T_MI close to room temperature arising out of the paramagnetic to ferromagnetic transition, and a large magneto-resistance (MR=∼16%) near T_MI has been observed for all the Ag doped samples. Between T_C(T_p1) and 350 K, all the samples show activated conduction following the Emin-Holstein theory of adiabatic small polaron hopping, while at lower temperatures, in the ferromagnetic regime resistivity appears to be governed by various electron scattering processes. Between 20 and 50 K, a distinct minimum for both H=0 and has been observed, which is explained in terms of inelastic scattering and electron-electron interactions.     

Electronic transport and magnetic studies of La1−xCax−0.08Sr0.04Ba0.04MnO3

Lanthanum based mixed valence manganite system La_1−xCa_x−0.08Sr_0.04Ba_0.04MnO₃ (LCSBMO; x=0.15, 0.24 and 0.33) synthesized through the sol-gel route is systematically investigated in this paper. The electronic transport and magnetic susceptibility properties are analyzed and compared, apart from the study of unit cell structure, microstructure and composition. Second order phase transition is observed in all the samples and significant difference is observed between the insulator to metal transition temperature (T_MI) and paramagnetic (PM) to ferromagnetic (FM) transition temperature (T_C). In contrast to the insulating FM behaviour usually observed in La_1−xCa_xMnO₃ (LCMO) for x=0.15, a clear insulator to metal transition is observed for LCSBMO for the same percentage of lanthanum. The temperature dependent resistivity of polycrystalline pellets, when obeying the well studied law ρ=ρ_o+ρ₂T² for T<T_MI, is observed to differ significantly in the values of ρ_o and ρ₂, with the electrical conductivity increasing with x. The variable range hopping model has been found to fit resistivity data better than the small polaron model for T>T_MI. AC magnetic susceptibility study of the polycrystalline powders of the manganite system shows the highest PM to FM transition of 285 K for x=0.33.     

Pulsed laser deposition of NdNiO3 thin films

We report the structural and transport properties of NdNiO₃ thin films prepared via pulsed laser deposition over various substrates. The films were well textured and c-axis oriented with good crystalline properties. The electrical resistivity of the films undergoes a metal-insulator transition, depending on the deposition process. Well-defined first order metal-insulator phase transition (T_MI) was observed in the best quality films without high pressure processing. Various growth conditions such as substrate temperature, oxygen pressure and thickness were varied to see their influence on T_MI. Deposition temperature was found to have a great impact on the electrical and structural properties of these films. Further the films deposited on LaAlO₃ substrate were found to be highly oriented with uniform grain size as observed from X-ray diffraction and atomic force microscopy, whereas those on Si substrate were polycrystalline, dense and randomly oriented.     

La2/3Sr1/3MnO3/BaTiO3复合薄膜的制备及其电致磁电效应研究

使用脉冲激光沉积技术,在LaAlO₃(001)单晶基片上制备了La_2/3Sr_1/3MnO₃(LSMO)/BaTiO₃(BTO)双层薄膜.X射线衍射分析显示,LSMO层和BTO层呈现纯(001)取向.原子力显微镜研究表明,薄膜表面晶粒大小均匀,排列致密,表面均方根粗糙度为1.4 nm.复合薄膜的磁学、电学性能研究表明,其具有良好的磁学和介电性能.电输运测试显示,与在BTO层上施加正方向 关键词： 磁电效应 铁电/铁磁异质结构 脉冲激光沉积     

Effects of ZnO film thickness on electrical and magnetoresistance characteristics of La0.8Sr0.2MnO3/ZnO heterostructures

The La_0.8Sr_0.2MnO₃/ZnO heterostructures with different thicknesses of ZnO films are fabricated by using RF magnetron sputtering technique. The heterojunctions exhibit excellent rectifying properties at 300 K. At low temperatures the temperature dependent junction resistance exhibits a metal-insulator transition like behavior. A magnetic field strongly impacts on electrical characteristics of La_0.8Sr_0.2MnO₃/ZnO p-n junctions, i.e., depressing the junction resistance greatly and driving the metal-insulator transition temperature (T_MI) towards higher temperatures. Large magnetoresistance is observed below T_MI, and it increases with increasing magnetic field and almost saturates at 5 T, i.e., above −90% at 100 K and 5 T.     

钙钛矿(La1-yTby)0.67Sr0.33MnO3的超巨磁电阻效应

采用固相反应烧结法制成了钙钛矿(La_1-yTb_y)_0.67Sr_0.33MnO₃(y=0—1)多晶样品.研究了样品的微观结构,常温、低温下的磁性,样品的磁电阻随温度、成分的变化关系,电阻随温度变化特性等.并在y=0.40样品中,170K附近、最大磁化场为7T时,观察到了900%的巨磁电阻. 关键词：     

Pressure-induced structural phase transition in ReO3

We have investigated the pressure-induced structural phase transition in ReO₃ by neutron diffraction on a single crystal. We collected neutron diffraction intensities from the ambient and high pressure phases at P=7 kbar and refined the crystal structures. We have determined the stability of the high pressure phase as a function temperature down to T=2 K and have constructed the (P-T) phase diagram. The critical pressure is P_c=5.2 kbar at T=300 K and decreases almost linearly with decreasing temperature to become P_c=2.5 kbar at T=50 K. The phase transition is driven by the softening of the M₃ phonon mode. The high pressure phase is formed by the rigid rotation of almost undistorted ReO₆ octahedra and the Re-O-Re angle deviates from 180°. We do not see any evidence for the existence of the tetragonal (P4/mbm) intermediate pressure phase reported earlier.     

Preparation and study of silver added La0.67Ca0.33MnO3 film

La_0.67Ca_0.33MnO₃ (LCMO) and Ag admixed La_0.67Ca_0.33MnO₃ (Ag-LCMO) polycrystalline films have been prepared on SrTiO₃ single crystal (100) substrates by ultrasonic spray pyrolysis technique. These films are characterized using XRD, SEM, and temperature dependence of resistivity (ρ-T) and ac susceptibility (χ-T). The films are having cubic structure with lattice parameters as 3.890 and 3.885 Å for LCMO and Ag-LCMO films, respectively. The peek in ρ-T curve (T_p) and the ferromagnetic transition temperature (T_C) for the Ag-LCMO film is higher than that of LCMO film. The stability of both the films was tested by repeated measurements of its characteristics over a period of one week after several thermal cycling from room temperature to 77 K. In the LCMO film, the peak in the ρ-T curve (T_p) is found to shift towards lower value and conduction noise of the film increases in the subsequent measurements. In the case of Ag-LCMO the value of T_p, T_C and conduction noise of the film did not change even after several measurements. Silver segregating at the grain boundaries in Ag-LCMO polycrystalline film seems to be responsible for improving the characteristics of Ag-LCMO films.     

Preparation and low field magnetoresistance of double layered manganite La1.4Ca1.6Mn2O7

Double layered manganite of La_1.4Ca_1.6Mn₂O₇ (DLCMO) was prepared using solid state reaction method and had a metal-insulator transition temperature (T_MI) of 125 K. The short range 2D-feerromagnetic ordering (T_C2) starts growing when T<168 K and it gets converted into 3D-ferromagnetic ordering (T_C1) at 114 K. Low field magnetoresistance (MR) behaviour of the DLCMO was investigated and compared with an infinite layered manganite La_0.7Ca_0.3MnO₃ (LCMO). For DLCMO, in the temperature range between T_C1 and T_C2, the MR showed a gradual increase with the magnetic field. The observed MR and R-T behaviour of double layered manganite for T_C1<T<T_C2 has been explained in the frame work of the two phase model [ferromagnetic (FM) domains and paramagnetic (PM) regions] and percolative behaviour of transport in FM-PM mixture.     

The structure and magnetotransport properties of La2/3Sr1/3MnO3/Ba(La)TiO3 composites

The effect of Ba(La)TiO₃ doping on the structure and magnetotransport properties of La_2/3Sr_1/3MnO₃(LSMO)/xBa(La)TiO₃ (x=0.0, 1.0, 5.0 mol%) have been investigated. The X-ray diffraction patterns and microstructural analysis show that BaTiO₃ and LSMO phases exist independently in BaTiO₃-doped composites. The metal-insulator transition temperature (T_MI) decreases whereas the maximum resistivity increases very quickly by the increase of BaTiO₃ doping level. The partial substitution of Ba by La(0.35 mol%) results in a decrease in resistivity of LSMO/xBa(La)TiO₃ composites. Magnetoresistance of BaTiO₃-doped composites decreases monotonously in the temperature range 200-400 K in a magnetic field of 5 T, which is completely different from that of LSMO compound. The value of MR decreases at low field (H<1 T) and increases at high fields (H>1 T) with increasing the BaTiO₃ doping level at low temperatures below 280 K. These investigations reveal that the magnetotransport properties of LSMO/xBa(La)TiO₃ composites are dominated by spin-dependent scattering and tunneling effect at the LSMO/BaTiO₃/LSMO magnetic tunnel junction.     

Search for high temperature coefficient of resistance La2/3Ca1/3MnO3 polycrystalline ceramics

La_2/3Ca_1/3MnO₃ polycrystalline ceramics were synthesized by sol–gel method. Sharp temperature coefficient of resistance (TCR) variation (with peak value up to 22 %) has been observed near the metal-insulator transition temperature T _MI (273 K) for the sample sintered at 1,450 °C. This TCR value is much higher than the previously reported values for the undoped and Ag-doped La_0.67Ca_0.33MnO₃ samples and is comparable to the optimized thin films. It was concluded that the improved physical properties of the La_0.67Ca_0.33MnO₃ material are due to its improved microstructure and homogeneity.     

Structural, magnetotransport and morphological studies of Sb-doped La2/3Ba1/3MnO3 ceramic perovskites

We report here the structural, magnetotransport and morphological studies of Sb-doped La_2/3Ba_1/3Mn_1−xSb_xO₃ perovskite manganites. Pristine material La_2/3Ba_1/3MnO₃ (LBMO) shows two insulator-metal (I-M) transitions in the electrical resistivity-temperature (ρ-T) behavior. While the higher temperature transition (T_P1) at ∼340 K is reminiscent of the usual I-M transition in manganites, the lower temperature transition (T_P2) at ∼250 K has been ascribed to the grain boundary (GB) effects arising out of the ionic size mismatch between the ions present at the rare-earth site (La³⁺ and Ba²⁺). With Sb-doping T_P1 shifts to lower temperatures while T_P2 remains invariant up to 3% and shifts to lower temperature for 5%. Room temperature electrical resistivity and the peak values also increase successively with Sb-doping. Scanning electron micrographs of the samples exhibit a gradual increase in their grain sizes with Sb indicating a gradual decrease in the GB density. Shift of T_P1 with doping is explained on the basis of a competition between double-exchange and super-exchange mechanisms. The overall electrical resistivity increases and the shift in the electrical resistivity hump (T_P2) with Sb-doping is found related to be gradually decreasing GB density and the ensuing lattice strain increase at the GBs. The intrinsic magnetoresistance (MR) gets suppressed and extrinsic MR gets enhanced with Sb-doping. At T>T_P1, the electrical resistivity is found to follow the adiabatic polaron hopping model whereas the electron-magnon scattering is found to dominate in the metallic regime (T<T_P1).     

Temperature hysteretic effect and its influence on colossal magnetoresistance of La0.33Nd0.33Ca0.33MnO3

Electrical resistance (R) measurements of a bulk La_0.33Nd_0.33Ca_0.33MnO₃ perovskite in magnetic fields up to 40 kOe have revealed anomalous temperature hysteretic effects both in 0 Oe and 20 kOe magnetic fields. The sharp peak observed in the R vs. T plot indicates the occurrence of metal-to-insulator (M-I) transition at a temperature of T _MI=110 K and 140 K, for cooling and warming paths, respectively. An applied magnetic field of 20 kOe reduces the resistance and shifts T _MI to 160 K and 185 K for cooling and warming, respectively. We have observed a much higher resistance in the cooling path than in the warming path leading to the hysteretic resistance ratio (R _cool/R _warm) of 200 at 110 K and 1.8 at 160 K for 0 Oe and 20 kOe, respectively. Record values of colossal magnetoresistance (CMR) have been achieved. The CMR value reaches nearly 99% in the temperature ranges of 90 K to 140 K and 90 K to 170 K for 20 kOe and 40 kOe magnetic fields in the cooling mode, respectively. The observed unusual behavior is attributed to the co-existence of La-rich and Nd-rich domains assumed to be distributed randomly in the compound.