A comparative study of CH4 and CF4 rf discharges using a consistent plasma physics and chemistry simulator

A self-consistent, one-dimensional simulator for the physics and chemistry of radio frequency (rf) plasmas was developed and applied for CH₄ and CF₄. The simulator consists of a fluid model for the discharge physics, a commercial Boltzmann equation solver for calculations of electron energy distribution fuction (EEDF), a generalized plasma chemistry code, and an interface module among the three models. The CH₄ and CF₄ discharges are compared and contrasted: CH₄ plasmas are electropositive, with negative ion densities one order of magnitude less than those of electrons, whereas CF₄ plasmas are electronegative, with ten times more negative ions than electrons. The high-energy tail of tire EEDF in CH₄, lies below both the Druyvensteyn and Maxwell distributions, whereas tire EEDF high-energy tail in CF₄ lies between the two. For CH₄, the chemistry model was applied for four species, namely, CH₄ CH₃ CH₂, and H, whereas for CF₄, five species were examined namely CF₄, CF₃, CF₂, CF, and F The predicted densities and profiles compare favorably with experimental data. Finally, the chemistry results were fedback into the physics model until convergence was obtained.     

Experimental and Theoretical Studies of a Pulsed Microwave Excited Ar/CF4 Plasma

The present work deals with a pulsed microwave discharge in an Ar/CF ₄ gas mixture under a low pressure (1–10 mbar). The discharge chamber developed has a cylindrical geometry with a coupling window alternatively made of quartz or alumina. The setup allows one to investigate the plasma–wall interactions (here etching of the quartz window) and the ignition process of the pulsed microwave plasma. Microwave pulses with a duration of 50–200 s and repetition rate between 1 and 10 kHz are typical for the experiments. The space-time behavior of the fluorine number density in the discharge has been investigated experimentally by optical actinometry. The discharge kinetics is modeled using electron-transport parameters and rate coefficients derived from solutions of the Boltzmann equation. Together with the solution of the continuity and electron balance equations and the rate equations describing the production of CF _x (x=2, 3, 4) radicals and F atoms, a good agreement between experimental and theoretical data can be achieved.     

Surface fluorination of paper in CF4-RF plasma environments

Plasma-based technologies are an exciting alternative for cellulose andpaper modification. Barrier coatings and surface functionalization of celluloseenhances properties and creates new possibilities for cellulose-based products.A parallel plate radio frequency (RF)-plasma reactor was used to modify papersubstrates under discharge parameters such as power, time and pressure. Carbontetrafluoride RF-plasma treatment of paper caused intense fluorination and itwas demonstrated that the fluorination reaction mechanisms can be controlled bythe external plasma parameters. Fluorine contents as high as 51.3% (contactangle=147°) were obtained for the treated cellulose. It was shown that eventreatment times as low as 30 s can generate relative surface fluorineatomic concentrations as high as 30%. High resolution ESCA and ATR-FTIRanalysisindicated covalently bound CF_x functional groups with CF₄treatment. It was found that under certain experimental conditionssuper-hydrophobic paper surfaces are created by combining the high surfacefluorine atomic concentrations with specific plasma-generated surfacetopographies.     

Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow discharges

Two quartz crystal microbalances have been mounted in a planar rf discharge system in such a way that the potential of the microbalances with respect to the glow discharge can be varied. This apparatus allows a rapid simulation of the etching directionality that can be expected in real pattern transfer situations in that operating one microbalance at ground and one at a negative potential gives a measure of the sidewall and vertical etch rates, respectively. The voltage threshold for ion-assisted etching has been determined to be 20 V which is the approximate value of the plasma potential in this asymmetric system.     

Gas-phase reactions of CF3 and CF2 with atomic and molecular fluorine: Their significance in plasma etching

Reaction rate coefficients have been measured at 295 K for both CF₃ and CF₂ with atomic and molecular fluorine. The reaction between CF₃ and F was studied over a gas number density range of (2.4–23)×10¹⁶ cm^–3 with helium as the bath gas. The measured rate coefficient increased from (1.1–1.7)×10^–11 cm³ s^–1 as the gas number density increased over this range. In contrast to this relatively small change in rate coefficient with gas number density, the rate coefficient for CF₂+F increased from (0.4–2.3)×10^–12 cm³ s^–1 as the helium gas number density increased from (3.4–28.4)×10¹⁶ cm^–3. Even for the highest bath gas number density employed, the rate coefficient was still more than an order of magnitude lower than earlier measurements of this coefficient performed at comparable gas number densities.Both these association reactions are examined from the standpoint of the Gorin model for association of radicals and use is made of unimolecular dissociation theory to examine the expected dependence on gas number density. The calculations reveal that CF₃+F can be explained satisfactorily in these terms but CF₂+F is not well described by the simple Gorin model for association.CF₃ was found to react with molecular fluorine with a rate coefficient of (7±2)×10^–14 cm³ s^–1 whereas only an upper limit of 2×10^–15 cm³ s^–1 could be placed on the rate coefficient for the reaction between CF₂ and F₂. The values obtained for this set of reactions mean that the reaction between CF₃ and F will play an important role in plasmas containing CF₄. The high rate coefficient will mean that, under certain conditions, this particular reaction will control the amount of CF₄ consumed. On the other hand, the much lower rate coefficient for reactions between CF₂ and F means that CF₂ will attain much higher concentrations than CF₃ in plasmas where these combination reactions are dominant.     

Rate Coefficient for Self-Association Reaction of CF2 Radicals Determined in the Afterglowof Low-Pressure C4F8 Plasmas

We have analyzed decay kinetics of CF₂ radicals in the afterglow of low-pressure, high-density C₄F₈ plasmas. The decay curve of CF₂ density has been approximated by the combination of first- and second-order kinetics. The surface loss probability evaluated from the frequency of the first-order decay process has been on the order of 10^–4. This small surface loss probability has enabled us to observe the second-order decay process. The mechanism of the second-order decay is self-association reaction between CF₂ radicals (CF₂+CF₂C₂F₄). The rate coefficient for this reaction has been evaluated as (2.6–5.3)×10^–14 cm³/s under gas pressures of 2 to 100 mTorr. The rate coefficient was found to be almost independent of the gas pressure and has been in close agreement with known values, which are determined in high gas pressures above 1 Torr.     

On the modulation of electron energy distribution function in radiofrequency SiH4, SiH4−H2 bulk plasmas

Electron energy distribution functions (EDF) in SiH₄, SiH₄–H₂ radiofrequency discharges have been calculated by solving the time-dependent Boltzmann equation in the presence of a sinusoidal field. Particular emphasis is given to the modulation of EDF as a function of the applied frequency (·10⁶/p ₀ ·10⁸ sec^–1 torr^–1) and of gas composition. The results show that at /p ₀ = ·10⁶ sec^–1 torr^–1 EDF follows in a quasistationary mode the variation of the field with the exception of a small range of electric field near to the zero crossing. Still, at the higher considered frequency (/p ₀ =·10⁸ sec^–1 torr^–1), we observe some modulation of EDF. The necessity of using a time-dependent approach is tested by comparing the present results with the corresponding ones obtained by using the effective field approximation (i.e., the approximation which solves instead of the time-dependent Boltzmann equation the corresponding stationary one at the effective values of the rf field). The two sets of results can differ by orders of magnitude in the tail of EDF, the differences decreasing with increasing molar fraction of H₂ and increasing field frequency. The role of excited states (second-kind collisions) is studied by inserting in the Boltzmann equation given concentrations of vibrational and electronic states. The results show that second-kind collisions strongly affect EDF especially in pure silane. Finally a satisfactory agreement has been found between theoretical and experimental results concerning the modulation of electrons of given energy in pure silane discharges.     

A model for the etching of Si in CF4 plasmas: Comparison with experimental measurements

A model has been developed to describe the chemistry which occurs in CF₄ plasmas and the etching of Si both in the plasma and downstream. One very important feature of this model is that for discharge residence times which vary by more than an order of magnitude, the amount of CF₄ consumed is low and relatively constant. This is because the gas-phase combination reactions between F and both CF₃ and CF₂ lead to the rapid reforming of CF₄. The model predicts that CF₂ is a major species in the gas phase and that the [F] detected as a sample point downstream is a very sensitive function of [CF₂]/[F] in the discharge. Even though the calculations show that [F] in the discharge varies only slightly over the wide range of experimental conditions considered, large variations in [F] at the sample point occur because the [CF₂]/[F] ratio in the discharge changes. The concentrations of C₂F₆ and SiF₄ are predicted to within a factor of 2 over a very wide range of experimental conditions. This confirms the importance of gas-phase free radical reactions in the etching of Si.     

Electron kinetics in a collision-dominated SiH4 rf plasma including self-consistent rf field strength calculation

The electron kinetics of a collision-dominated rf plasma in silane has been studied by solving the nonstationary electron Boltzmann equation. Ionization and attachment processes and the spatially averaged electron loss to the plasma wall by ambipolar diffusion have been included in the kinetic approach. This makes it possible to calculate, in addition to the time-resolved energy distribution, the self-consistent rf field amplitude which is necessary for the maintenance of the steady-state rf discharge. The impact of the rf field frequency, of the density ratio of negative ions to electrons, and of superelastic (second kind) collisions with excited silane molecules was studied. In particular, large, rf field amplitudes of about 100 V cm^–1 Torr^–1 result, connected with large modulations of the energy distribution for field frequencies in the megahertz region.     

Etching Efficiency for Si and SiO2 by CF+x,F+, and C+ Ion Beams Extracted from CF4 Plasmas

Fluorocarbon (CF⁺ _x), fluorine (F⁺), and carbon (C⁺) ion beams with highcurrent density (50i<800 A/cm²) were irradiated to Si and SiO₂surfaces to investigate the influence of the ion species on the etchingefficiency. The ion beams were extracted from magnetized helicon-wave CF₄plasmas operated in pulsed modes. The CF⁺ ₃ beam had the largest etchingefficiency for Si at the same beam energy. When the same data weresummarized as a function of the momentum of the incident ion beam, thedifference in the etching efficiency became small, although the CF⁺ ₃ beamstill had a slightly larger etching efficiency. On the other hand, theetching efficiency for SiO₂ by the CF⁺ ₃ beam was larger than that by theother ion beams in the low-momentum region. In addition, in the low-momentumregion, the etching efficiency for SiO₂ by CF⁺ ₃ was larger than that forSi. These results suggest the high chemical reactivity of CF⁺ ₃ with SiO₂,leading to the high etching selectivity of SiO₂ over underlying Si in thefabrication of semiconductor devices.     

Spatially resolved optical emission studies of fluorocarbon RF plasma through the use of UV-transmitting optical fibers

A technique for collecting spatially resolved optical emission from large rf plasma reactors is described. To demonstrate the sensitivity and versatility of this technique, emission within the quartz ultraviolet, 225–253 nm, was studied with particular emphasis on the plasma dark space. Spatial variations of CF₂, AlF, and C atom emission were monitored. These results have been used for discussion and evaluation of various plasma excitation and reaction mechanisms involving atomic carbon in fluorocarbon plasmas.     

Synthesis Of CF3-Heterocycles Based on 4-Dimethylamino-1,1,1-trifluoro-3-buten-2-one

Novel heterocyclizations have been investigated based on the reaction of the complex between trifluoromethanesulfonic anhydride and 4-dimethylamino-1,1,1-trifluoro-3-buten-2-one with 2,2'-biindolyl and N,N'-dipyrrolylmethane leading to closure of 6- or 7-membered rings.     

Mechanisms of hydrophobization of polymeric composites etched in CF4 plasma

Achieving optimal hydrophobicity of polymer materials especially polymer–matrix composites is important for many material applications. Herein the interplay of factors determining hydrophobic surface is presented during CF₄ plasma treatments which lead to functionalization as well as selective polymer–matrix etching. The continuous exposure to plasma reactive species induces functionalization and etching on the surface, which decides the surface morphology and surface chemistry. Consequently, exothermic processes during the plasma–surface interactions are another important factor which influences the surface chemistry and etching rate of the material. The results demonstrate that despite etching and increasing surface roughness, the major contribution to hydrophobic character is dependent on the number of carbon atoms populated with fluorine, whereas the temperature is a deciding factor for type of created bonds. Copyright © 2016 John Wiley & Sons, Ltd.     

Reactions of Diazoalkanes with Unsaturated CF3-Ketones

The cycloaddition reactions of various diazoalkanes with unsaturated trifluoromethyl-containing ketones have been investigated. The reactions proceed regiospecifically and stereoselectively to the formation of trifluoroacetyl derivatives of 1H-pyrazolines.     

UF6 plasma chemistry reconstitution experiments using high-temperature fluorine

Prior results indicate techniques have been developed for fluid mechanical confinement of high-temperature uranium hexafluoride (UF₆) plasma for long test times while simultaneously minimizing uranium compound deposition on the walls. Follow-on investigations were conducted to demonstrate a UF₆/argon injection, separation, and reconstitution system for use with rf-heated uranium plasma confinement experiments applicable to UF₆ plasma core reactors. A static fluorine batch-type regeneration test reactor and a flowing preheated fluorine/UF₆ regeneration system were developed for converting all the nonvolatile uranium compound exhaust products back to pure UF₆ using a single reactant. Pure fluorine preheat temperatures up to 1000 K resulted in on-line regeneration efficiencies up to about 90%; static batch-type experiments resulted in 100% regeneration efficiencies but required significantly longer residence times. A custom-built, ruggedized time-of-flight (T.O.F.) mass spectrometer, sampling, and data acquisition system permitted on-line quantitative measurements of the UF₆ concentrations down to 30 ppm at various sections of the exhaust system; this system proved operational after long-time exposure to corrosive UF₆ and other uranium halides.     

Excited states of CF4 plasma for polymerization of TMPTA monomer

The F and CF₂–CF₂⁺ excited states have been detected by emission spectroscopy in CF₄RF plasmas used for TMPTA polymerization. These excited states are related through electron collision to F and CF₂ ground states. The temporal variation of the F and CF₂–CF₂⁺ radiative states near the substrate reveals that the F atoms disappear first by incorporation in the monomer during the polymerization phase and, then, by a third body recombination process enhanced by the polymer surface. The CF₂–CF₂⁺ radiative states are varying as the inverse of the F states indicating a strong destruction mechanism of CF₂ radicals by F atoms.     

Semiempirical method for extracting electron molecule cross sections from experimental data: CF4 as an example

A semiempirical method is described for calculating electron-molecule interaction potential, electron density, and elastic and vibrational inelastic cross sections using experimental data.CF ₄ was considered as un example. Experimental data from IR and Raman spectra, molecular property calculations (dipole matrix elements, polarizability, distance between atoms in molecule), beam measurements of total, momentum transfer, and differential cross sections, and swarm data (diffusion and drift veolcity) are used for extracting the interaction potential, the molecule electron density, avid the differential cross sections. Electron energy distribution functions, drift velocity, and characteristic energy are calculated with the obtained differential e-CF ₄ cross sections lierAr/CF ₄ mixtures.     

Effect of alkali additives on the kinetics of WO3+CCl4 reaction

The chlorination kinetics of alkali-added (K and Li) tungsten trioxide were studied by thermogravimetry, using gaseous CCl₄ as chlorinating agent. The reactivity of the modified samples was compared to the results on the chlorination of pure WO₃. Similar apparent activation energies were found for the pure and alkali-added samples. However, potassium additive resulted in a strong decrease of the initial reaction rate, while surface lithium has no influence on it.During the chlorination a continuous decrease of the linear reaction rate was observed for both samples, which was explained by retarding effects of surface by-products and alkali additives. For describing the isothermal TG curves an appropriate kinetic model, based on the monotonously increasing inhibition of these species was assumed. The curve calculated with this model fits well to the experimental results.

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Zusammenfassung Mittels Thermogravimetrie wurde die Chlorierungskinetik von alkaliversetztem (K und Li) Wolframtrioxid untersucht, wobei CCl₄ als Chlorierungsreagens fungierte. Die Reaktivität der modifizierten Proben wurden mit der von reinem WO₃ verglichen. Für die reinen und für die alkaliversetzten Proben wurden ähnliche scheinbare Aktivierungsenergien gefunden. Der Zusatz von Kalium verursacht jedoch eine starke Abnahme der ursprünglichen Reaktionsgeschwindigkeit, während oberflächiges Lithium keinen Effekt zeigt.Während der Chlorierung wurde eine ständige Senkung der linearen Reaktionsgeschwindigkeit für beide Proben festgestellt, was mit Rückhalteeffekten von oberflächigen Nebenprodukten und Alkalizusätzen erklärt wird. Zur Beschreibung der isothermen TG-Kurven wurde ein entsprechendes kinetisches Modell angenommen, welches auf einer monoton steigenden Inhibition dieser Proben basiert. Die auf der Grundlage dieses Modelles berechnete Kurve stimmt recht gut mit den experimentellen Ergebnissen überein.

     

On the crystal chemistry of three copper(II)-arsenates: Cu3(AsO4)2-III,Na4Cu(AsO4)2, and KCu4(AsO4)3

The three copper(II)-arsenates were synthesized under hydrothermal conditions; their crystal structures were determined by single-crystal X-ray diffraction methods:Cu₃(AsO₄)₂-III:a=5.046(2) Å,b=5.417(2) Å,c=6.354(2) Å, =70.61(2)°, =86.52(2)°, =68.43(2)°,Z=1, space group ,R=0.035 for 1674 reflections with sin / 0.90 Å^–1.Na₄Cu(AsO₄)₂:a=4.882(2) Å,b=5.870(2) Å,c=6.958(3) Å, =98.51(2)°, =90.76(2)°, =105.97(2)°,Z=1, space group ,R=0.028 for 2157 reflections with sin / 0.90 Å^–1.KCu₄(AsO₄)₃:a=12.234(5) Å,b=12.438(5) Å,c=7.307(3) Å, =118.17(2)°,Z=4, space group C2/c,R=0.029 for 1896 reflections with sin / 0.80 Å^–1.Within these three compounds the Cu atoms are square planar [4], tetragonal pyramidal [4+1], and tetragonal bipyramidal [4+2] coordinated by O atoms; an exception is the Cu(2)^[4+1] atom in Cu₃(AsO₄)₂-III: the coordination polyhedron is a representative for the transition from a tetragonal pyramid towards a trigonal bipyramid. In KCu₄(AsO₄)₃ the Cu(1)^[4]O₄ square and the As(1)O₄ tetrahedron share a common O—O edge of 2.428(5) Å, resulting in distortions of both the CuO₄ square and the AsO₄ tetrahedron. The two Na atoms in Na₄Cu(AsO₄)₂ are [6] coordinated, the K atom in KCu₄(AsO₄)₃ is [8] coordinated by O atoms.Die drei Kupfer(II)-Arsenate wurden unter Hydrothermalbedingungen gezüchtet und ihre Kristallstrukturen mittels Einkristall-Röntgenbeugungsmethoden ermittelt:Cu₃(AsO₄)₂-III:a = 5.046(2) Å,b = 5.417(2) Å,c = 6.354(2) Å, = 70.61 (2)°, = 86.52(2)°, = 68.43(2)°,Z = 1, Raumgruppe ,R = 0.035 für 1674 Reflexe mit sin / 0.90 Å^–1.Na₄Cu(AsO₄)₂:a = 4.882(2) Å,b = 5.870(2) Å,c = 6.958(3) Å, = 98.51(2)°, = 90.76(2)°, = 105.97(2)°,Z = 1, Raumgruppe ,R = 0.028 für 2157 Reflexe mit sin / 0.90 Å^–1.KCu₄(AsO₄)₃:a = 12.234(5) Å,b = 12.438(5) Å,c = 7.307(3) Å, = 118.17(2)°,Z = 4, Raumgruppe C2/c,R = 0.029 für 1896 Reflexe mit sin / 0.80 Å^–1.Die Cu-Atome in diesen drei Verbindungen sind durch O-Atome quadratisch planar [4], tetragonal pyramidal [4 + 1] und tetragonal dipyramidal [4 + 2]-koordiniert; eine Ausnahme ist das Cu(2)^{[4 + 1]}-Atom in Cu₃(AsO₄)₂-III: Das Koordinationspolyeder stellt einen Vertreter des Übergangs von einer tetragonalen Pyramide zu einer trigonalen Dipyramide dar. In KCu₄(AsO₄)₃ haben das Cu(1)^[4]O₄-Quadrat und das As(1)O₄-Tetraeder eine gemeinsame O—O-Kante von 2.428(5) Å, was eine Verzerrung der beiden Koordinationsfiguren CuO₄-Quadrat und AsO₄-Tetraeder bedingt. Die zwei Na-Atome in Na₄Cu(AsO₄)₃ sind durch O-Atome [6]-koordiniert, das K-Atom in KCu₄(AsO₄)₃ ist [8]-koordiniert.

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Zur Kristallchemie dreier Kupfer (II)-Arsenate: Cu₃(AsO₄)₂-III, Na₄Cu(AsO₄)₂ und KCu₄(AsO₄)₃