Picosecond laser ablation of thin copper films

The ablation process of thin copper films on fused silica by picosecond laser pulses is investigated. The ablation area is characterized using optical and scanning electron microscopy. The single-shot ablation threshold fluence for 40 ps laser pulses at 1053 nm has been determinated toF _thres = 172 mJ/cm². The ablation rate per pulse is measured as a function of intensity in the range of 5 × 10⁹ to 2 × 10¹¹ W/cm² and changes from 80 to 250 nm with increasing intensity. The experimental ablation rate per pulse is compared to heat-flow calculations based on the two-temperature model for ultrafast laser heating. Possible applications of picosecond laser radiation for microstructuring of different materials are discussed.     

Surface modification of a WTi thin film on Si substrate by nanosecond laser pulses

Interaction of a nanosecond transversely excited atmospheric (TEA) CO₂ laser, operating at 10.6 μm, with tungsten-titanium thin film (190 nm) deposited on silicon of n-type (1 0 0) orientation, was studied. Multi-pulse irradiation was performed in air atmosphere with laser energy densities in the range 24-49 J/cm². The energy absorbed from the laser beam was mainly converted to thermal energy, which generated a series of effects. The following morphological changes were observed: (i) partial ablation/exfoliation of the WTi thin film, (ii) partial modification of the silicon substrate with formation of polygonal grains, (iii) appearance of hydrodynamic features including nano-globules. Torch-like plumes started appearing in front of the target after several laser pulses.     

Femtosecond pulsed laser ablation of thin gold film

Laser micromachining on 1000 nm-thick gold film using femtosecond laser has been studied. The laser pulses that are used for this study are 400 nm in central wavelength, 150 fs in pulse duration, and the repetition rate is 1 kHz. Plano-concave lens with a focal length of 19 mm focuses the laser beam into a spot of 3 μm (1/e² diameter). The sample was translated at a linear speed of 400 μm/s during machining. Grooves were cut on gold thin film with laser pulses of various energies. The ablation depths were measured and plotted. There are two ablation regimes. In the first regime, the cutting is very shallow and the edges are free of molten material. While in the second regime, molten material appears and the cutting edges are contaminated. The results suggest that clean and precise microstructuring can be achieved with femtosecond pulsed laser by controlling the pulse energy in the first ablation regime.     

Metal thin film ablation with femtosecond pulsed laser

Micromachining thin metal films coated on glass are widely used to repair semiconductor masks and to fabricate optoelectrical and MEMS devices. The interaction of lasers and materials must be understood in order to achieve efficient micromachining. This work investigates the morphology of thin metal films after machining with femtosecond laser ablation using about 1 μm diameter laser beam. The effect of the film thickness on the results is analyzed by comparing experimental images with data obtained using a two-temperature heat transfer model. The experiment was conducted using a high numerical aperture objective lens and a temporal pulse width of 220 fs on 200- and 500-nm-thick chromium films. The resulting surface morphology after machining was due to the thermal incubation effect, low thermal diffusivity of the glass substrate, and thermodynamic flow of the metal induced by volumetric evaporation. A Fraunhofer diffraction pattern was found in the 500-nm-thick film, and a ripple parallel to the direction of the laser light was observed after a few multiple laser shots. These results are useful for applications requiring micro- or nano-sized machining.     

Sub-micron ablation of metallic thin film by femtosecond pulse laser

The ability to machine very small features in a material has a wide range of applications in industry. We ablated holes into thin film of 100 nm thickness made from various metals by femtosecond pulsed laser ablation. Using a Ti:Sapphire laser which supplies a laser pulse of 150 fs duration at central spectrum wavelength of 400 nm, we have produced a series sub-micron holes, whose diameters are less than 200 nm with a focused laser spot of 1.7 μm. We found that the material damage threshold has a great influence on the quality of the produced features. Experimental results shows that the heat-affected zone and the degree of being affected reduce with the increase of threshold value.     

Ripple formation in the chromium thin film during laser ablation

The beam of a nanosecond pulse laser tightly focused to a line was applied for the back-side ablation of the chromium thin film on a glass substrate. The stripe ablated with a single laser pulse had sharp edges on both sides and ridges of the melted metal around it. The partially overlapping pulses formed a wide cleaned area with a complicated structure made of the metal remaining from the ridges. Regular structures, ripples, were developed when laser fluence was slightly above the single-pulse removal threshold and the shift between pulses was less than half width of the line ablated with a single laser pulse. The ripples were located periodically (∼4 μm) and were orientated perpendicularly to the long axis of the beam spot. Their orientation did not depend on the laser beam polarization. Different models of the ripple formation in the thin metal film were considered, and instability of the moving vapor-liquid-solid contact line during evaporation of thin liquid films appears to be the most probable process responsible for the observed phenomena. Formation of regular gratings with the unlimited line length was experimentally implemented by using the above-mentioned technique.     

Micromachining of a thin film by laser ablation using femtosecond laser with masks

A gold thin film was machined by laser ablation using a femtosecond laser with mask patterns in the shape of lines and numbers. The patterns were successfully transferred with proper focusing and laser fluence. The optimal femtosecond laser fluence to keep the line width was about 5.2 mJ/cm² on the mask, and 99 mJ/cm² on the film. The processing resolution was 13 μm, and the narrowest line width was about 4 μm.     

Femtosecond pulsed laser ablation of 3CSiC thin film on silicon

A femtosecond pulsed Ti:sapphire laser (pulse width=120 fs, wavelength=800 nm, repetition rate=1 kHz) was employed to perform laser ablation of 1-m-thick silicon carbide (3CSiC) films grown on silicon substrates. The threshold fluence and ablation rate, useful for the micromachining of the 3CSiC films, were experimentally determined. The material removal mechanisms vary depending on the applied energy fluence. At high laser fluence, a thermally dominated process such as melting, boiling and vaporizing of single-crystal SiC occurs. At low laser fluence, the ablation is a defect-activation process via incubation, defect accumulation, formation of nanoparticles and final vaporization of boundaries. The defect-activation process reduces the ablation threshold fluence and enhances lateral and vertical precision as compared to the thermally dominated mechanism. Helium, as an assistant gas, plays a major role in improving the processing quality and ablation rate of SiC thin films due to its inertness and high first ionization energy. PACS 79.20.Ds; 42.62.Cf; 42.70.Qs; 61.72; 61.46     

Single-shot front-side nanoscale femtosecond laser ablation of a thin silver film

Nano- and microscale holes, as well as related sub-ablative nanospikes and sub-micron bumps, were produced in a 30-nm thick silver film on a silica substrate by single femtosecond laser pulses with variable pulse energies, focused by different strong focusing optics. Characteristic laser energy deposition dimensions exceed the expected focal spots by nearly 2 microns, indicating the considerable lateral thermal transport in the film, while the effective hole formation thresholds decrease versus increasing numerical aperture of focusing optics. Morphologies of the sub-ablative solidified surface nanostructures and numerical estimates of deposited volume energy density undermine blowing-off the molten film due to subsurface boiling and near-critical phase explosion at lower and higher sub-threshold fluences, respectively.     

KrF excimer laser ablation of thin Cr film on glass substrate

Received: 5 October 1998 / Accepted: 14 December 1998 / Published online: 24 February 1999     

Picosecond laser ablation of nickel-based superalloy C263

Picosecond laser (10.4 ps, 1064 nm) ablation of the nickel-based superalloy C263 is investigated at different pulse repetition rates (5, 10, 20, and 50 kHz). The two ablation regimes corresponding to ablation dominated by the optical penetration depth at low fluences and of the electron thermal diffusion length at high fluences are clearly identified from the change of the surface morphology of single pulse ablated craters (dimples) with fluence. The two corresponding thresholds were measured as F _th(D1)¹=0.68±0.02 J/cm² and F _th(D2)¹=2.64±0.27 J/cm² from data of the crater diameters D _1,2 versus peak fluence. The surface morphology of macroscopic areas processed with a scanning laser beam at different fluences is characterised by ripples at low fluences. As the fluence increases, randomly distributed areas among the ripples are formed which appear featureless due to melting and joining of the ripples while at high fluences the whole irradiated surface becomes grainy due to melting, splashing of the melt and subsequent resolidification. The throughput of ablation becomes maximal when machining at high pulse repetition rates and with a relatively low fluence, while at the same time the surface roughness is kept low.     

Crystalline SiC thin film deposition by laser ablation: influence of laser surface activation

2 ) of the growing SiC film improved the film microstructure equivalent to an increase of the substrate temperature by 150–200 °C. Received: 18 August 1997/Accepted: 8 September 1997     

Optical and structural properties of pulsed laser ablation deposited ZnO thin film

A limited number of reports exists in the literature concerning the systematic study of the structural and optical properties of ZnO thin films, produced by pulsed laser ablation, in correlation with the deposition parameters adopted. In this paper we present a characterization of a sample prepared by this technique and studied by photoelectron spectroscopy and X-ray diffraction. The dielectric function of both target and films has been deduced by reflection electron energy loss spectroscopy.     

Redistribution of a material at femtosecond laser ablation of a thin silver film

Energy-dispersive X-ray microspectroscopy is used for the first time to quantitatively study the spatial displacement of the material of a 100-nm silver film irradiated by a single femtosecond laser pulse focused on a small spot in the diffraction limit. The silver mass distribution over radial cross sections is determined and matter balance is analyzed for the resulting radially symmetric submicron structures of a microcone with a nanospike with various heights and a through hole. Hydrodynamic processes and phase transitions inducing the melting of the film, motion of the melt, and its recrystallization within a focal spot are studied.     

Optical emission spectroscopy of thin film fabrication by pulsed laser ablation under high-gravity

We carried out the thin film deposition of iron silicide by pulsed laser ablation (PLA) on a sapphire substrate, which was placed on a high-speed rotating titanium disk. The deposited thin film exhibited a continuous composition gradient. We investigated how the continuous composition gradient was attained, because the strength of the gravity field in our experiment was far below that in the experiment on bulk crystalline compounds. In the present study, we obtain the spatial distribution of several species in the PLA plume of FeSi₂ by using an intensified charge-coupled device (ICCD) camera.     

Picosecond laser cutting and drilling of thin flex glass

We investigate the feasibility of cutting and drilling thin flex glass (TFG) substrates using a picosecond laser operating at wavelengths of 1030 nm, 515 nm and 343 nm. 50 μm and 100 μm thick AF32^®Eco Thin Glass (Schott AG) sheets are used. The laser processing parameters such as the wavelength, pulse energy, pulse repetition frequency, scan speed and the number of laser passes which are necessary to perform through a cut or to drill a borehole in the TFG substrate are studied in detail. Our results show that the highest effective cutting speeds (220 mm/s for a 50 μm thick TFG substrate and 74 mm/s for a 100 μm thick TFG substrate) are obtained with the 1030 nm wavelength, whereas the 343 nm wavelength provides the best quality cuts. The 515 nm wavelength, meanwhile, can be used to provide relatively good laser cut quality with heat affected zones (HAZ) of <25 μm for 50 μm TFG and <40 μm for 100 μm TFG with cutting speeds of 100 mm/s and 28.5 mm/s, respectively. The 343 nm and 515 nm wavelengths can also be used for drilling micro-holes (with inlet diameters of ⩽75 µm) in the 100 μm TFG substrate with speeds of up to 2 holes per second (using 343 nm) and 8 holes per second (using 515 nm). Optical microscope and SEM images of the cuts and micro-holes are presented.     

Picosecond laser ablation of SiO2 layers on silicon substrates

In this work, we report on laser ablation of thermally grown SiO₂ layers from silicon wafer substrates, employing an 8–9 ps laser, at 1064 (IR), 532 (VIS) and 355 nm (UV) wavelengths. High-intensity short-pulse laser radiation allows direct absorption in materials with bandgaps higher than the photon energy. However, our experiments show that in the intensity range of our laser pulses (peak intensities of <2×10¹² W/cm²) the removal of the SiO₂ layer from silicon wafers does not occur by direct absorption in the SiO₂ layer. Instead, we find that the layer is removed by a “lift off” mechanism, actuated by the melting and vaporisation of the absorbing silicon substrate. Furthermore, we find that exceeding the Si melting threshold is not sufficient to remove the SiO₂ layer. A second threshold exists for breaking of the layer caused by sufficient vapour pressure. For SiO₂ layer ablation, we determine layer thickness dependent minimum fluences of 0.7–1.2 J/cm² for IR, 0.1–0.35 J/cm² for VIS and 0.2–0.4 J/cm² for UV wavelength. After correcting the fluences by the reflected laser power, we show that, in contrast to the melting threshold, the threshold for breaking the layer depends on the SiO₂ thickness.     

Picosecond and femtosecond pulsed laser ablation and deposition of quasicrystals

A Nd:glass laser with pulse duration of 250 fs and 1.3 ps has been used to evaporate a Al₆₅Cu₂₃Fe₁₂ quasicrystalline target. The gaseous phase obtained from the ablation process has been characterised by several techniques such as emission spectroscopy, quadrupole mass spectrometry and ICCD imaging, used to study the plume composition, energy and morphology. The results show that the ablation processes in the short-pulse regimes are very different to the nanosecond one. In particular the plume angular distribution shows a characteristic high cosine exponent and the composition is completely stoichiometric and independent from the laser fluence. Furthermore the mass spectra indicate the presence of clusters, both neutral and ionised and the emission from the target suggest a rapid thermalisation leading to the melting of the surface. To clarify the ablation process some films have been deposited, on oriented silicon, at different experimental conditions and analysed by scanning electron microscopy, atomic force microscopy, energy dispersive X-ray analysis and X-ray diffraction. The analyses show the presence of nanostructured films retaining the target stoichiometry but consisting of different crystalline and non crystalline phases. In particular the nanostructure supports the hypothesis of the melting of the target during the ablation and a mechanism of material ejection is proposed for both picosecond and femtosecond regimes.     

Picosecond pulsed laser ablation and micromachining of 4H-SiC wafers

Ultra-short pulsed laser ablation and micromachining of n-type, 4H-SiC wafer was performed using a 1552 nm wavelength, 2 ps pulse, 5 μJ pulse energy erbium-doped fiber laser with an objective of rapid etching of diaphragms for pressure sensors. Ablation rate, studied as a function of energy fluence, reached a maximum of 20 nm per pulse at 10 mJ/cm², which is much higher than that achievable by the femtosecond laser for the equivalent energy fluence. Ablation threshold was determined as 2 mJ/cm². Scanning electron microscope images supported the Coulomb explosion (CE) mechanism by revealing very fine particulates, smooth surfaces and absence of thermal effects including melt layer formation. It is hypothesized that defect-activated absorption and multiphoton absorption mechanisms gave rise to a charge density in the surface layers required for CE and enabled material expulsion in the form of nanoparticles. Trenches and holes micromachined by the picosecond laser exhibited clean and smooth edges and non-thermal ablation mode for pulse repetition rates less than 250 kHz. However carbonaceous material and recast layer were noted in the machined region when the pulse repetition rate was increased 500 kHz that could be attributed to the interaction between air plasma and micro/nanoparticles. A comparison with femtosecond pulsed lasers shows the promise that picosecond lasers are more efficient and cost effective tools for creating sensor diaphragms and via holes in 4H-SiC.     

Preparation of nano-sized functional materials using laser ablation in liquids

We propose a convenient technique applicable for investigations of various functions of nanoparticles produced by laser ablation in liquids. It was demonstrated that nanoparticles of anatase-TiO₂, a electrode material for lithium secondary batteries, produced by laser ablation in acetone could be efficiently deposited on a substrate by using an electrophoresis technique. Analysis of the electrochemical properties of nanoparticles become much more facile with those deposited nanoparticles than with dispersed nanoparticles. In addition, it was demonstrated that comparison of the electrochemical properties between nanoparticles and microparticles were possible by means of this technique.