Measurement of unstable burning velocities of iso-octane–air mixtures at high pressure and the derivation of laminar burning velocities

A new technique is reported for measuring burning velocities at high pressures in the final stages of two inwardly propagating flame kernels in an explosion bomb. The flames were initiated at diametrically opposite spark electrodes, close to the wall, in quiescent mixtures. Measurements of pressure and flame kernel propagation speeds by high-speed photography showed the burning velocities to be elevated above the corresponding laminar burning velocities as a result of the developing flame instabilities. The enhancement increased with increase in pressure and decreased with increase in Markstein number. When the Markstein number was negative, instabilities could be appreciable, as could the enhancement. For the iso-octane–air mixtures investigated, where the mixtures had well-characterised Markstein numbers or critical Peclet numbers at the relevant pressures and temperatures, it was possible to explain the enhancement quantitatively by the spherical explosion flame instability theory of Bechtold and Matalon, provided the critical Peclet number was that observed experimentally, and allowance was made for the changing pressure. With this theoretical procedure, it was possible to derive values of laminar burning velocity from the measured values of burning velocity over a wide range of equivalence ratios, pressures, and temperatures. The values became less reliable at the higher temperatures and pressures as the data on Markstein and critical Peclet numbers became less certain. It was found that with iso-octane as the fuel the laminar burning velocity decreased during isentropic compression.     

Experimental determination of counterflow ignition temperatures and laminar flame speeds of C2–C3 hydrocarbons at atmospheric and elevated pressures

Experimental data were acquired for: (1) the ignition temperatures of nitrogen–diluted ethylene and propylene by counterflowing heated air for various strain rates and system pressures up to 7 atm; (2) the laminar flame speeds of mixtures of air with acetylene, ethylene, ethane, propylene, and propane, deduced from an outwardly propagating spherical flame in a constant-pressure chamber, for extensive ranges of lean-to-rich equivalence ratio and system pressure up to 5 atm. These data, respectively, relevant for low- to intermediate-temperature ignition chemistry and high-temperature flame chemistry, were subsequently compared with calculated results using a literature C₁–C₃ mechanism and an ethylene mechanism. Noticeable differences were observed in the comparison for both mechanisms, and sensitivity analyses were conducted to identify the reactions of importance.     

Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature

The boron–oxygen‐related recombination center responsible for the light‐induced degradation of solar cells made on boron‐doped oxygen‐contaminated silicon is deactivated by simultaneously annealing the silicon wafer in the temperature range 135–210 °C and illuminating it with white light. The recombination lifetime after deactivation is found to be stable under illumination at room temperature. The deactivation process is shown to be thermally activated with an activation energy of 0.7 eV. Based on the experimental findings, a defect reaction model is proposed explaining the deactivation of the boron–oxygen center. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spectroscopy of II–VI nanocrystals at high pressure and high temperature

We review experimental measurements of CdS, CdSe, and CdS_xSe_{1 − x} nanocrystals which address the properties and phase stability of both powder and embedded nanoparticles under extreme conditions. We address the high pressure phase transition of wurtzite or zincblende phase to the rock salt structure; the high temperature solid to liquid phase transition; and the homogeneous nucleation of nanoparticles in glass from dissolved reactants. We also review the use of high pressure optical measurements to study electronic states.     

Influence of process time on microstructure and properties of 17-4PH steel plasma nitrocarburized with rare earths addition at low temperature

17-4PH stainless steel was plasma nitrocarburized at 430 °C for different time with rare earths (RE) addition. Plasma RE nitrocarburized layers were studied by optical microscope, scanning electron microscope equipped with an energy dispersive X-ray analyzer, X-ray diffraction, microhardness tests, pin-on-disc tribometer and anodic polarization tests. The results show that rare earths atoms can diffuse into the surface of 17-4PH steel. The modified layer depths increase with increasing process time and the layer growth conforms approximately to the parabolic law. The phases in the modified layer are mainly of γ′-Fe₄N, nitrogen and carbon expanded martensite (α′_N) as well as some incipient CrN at short time (2 h). With increasing of process time, the phases of CrN and γ′-Fe₄N increase but α′_N decomposes gradually. Interestingly, the peaks of γ′-Fe₄N display a high (2 0 0) plane preferred orientation. The hardness of the modified specimen is more than 1340 HV, which is about 3.7 times higher than that of untreated one. The friction coefficients and wear rates of specimens can be dramatically decreased by plasma RE nitrocarburizing. The surface hardness and the friction coefficients decrease gradually with increasing process time. The corrosion test shows that the 8 h treated specimen has the best corrosion resistance with the characterization of lower corrosion current density, a higher corrosion potential and a large passive region as compared with those of untreated one.     

Reinvestigation of pressure broadening parameters at 60-GHz band and single 118.75 GHz oxygen lines at room temperature

Low pressure measurements of broadening parameters of the 118.75 GHz fine structure line of oxygen molecule have been made by a BWO-based spectrometer with acoustic detector (RAD) at room temperature. Pressure broadening parameters were obtained for the buffer gases O₂, N₂, Ne, He, Ar, H₂O, CO₂, and CO and have the following values 2.23 ± 0.01, 2.245 ± 0.02, 1.375 ± 0.02, 1.62 ± 0.03, 2.005 ± 0.02, 2.52 ± 0.04, 2.66 ± 0.08, and 2.31 ± 0.05 MHz/Torr, respectively. Measured central frequency is 118 750.340 ± 0.007 MHz. The central frequencies and broadenings by O₂ and N₂ of fine structure lines 1⁺, 5⁻, 7⁺, 11⁺, and 15⁻ belonging to the 60-GHz band are also measured. Comparison of previous and recent data on electronic, rotational, and fine structure lines broadenings reveals their close values (within 10%) and dependencies on corresponding rotational quantum numbers for these different oxygen spectra stretching from millimeter through submillimeter up to the optical bands. Such similarity could be used for estimation of the broadenings of not measured yet oxygen lines.     

Effects of blending 2,5-dimethylfuran on the laminar burning velocity and ignition delay time of isooctane/air mixture

The prospects of 2,5-dimethylfuran (DMF) as a bio-derived fuel that can be blended with gasoline are believed to be impressive. However, the effects of blending DMF on the key combustion parameters like the laminar burning velocity and ignition delay time of gasoline/air mixture need to be studied extensively for the successful implementation of the fuel mixture in spark ignition engines. Therefore, a skeletal chemical kinetic mechanism, comprising of 999 reactions among 218 species, has been developed in the present work for this purpose. The proposed chemical kinetic model has been validated against a wide range of experimental data for the laminar burning velocity and ignition delay time of isooctane (representing gasoline), DMF and their blends. It has been found from the present study that the thermal diffusivity of the unburnt gas mixture changes by a very small amount from the corresponding value for the pure isooctane/air mixture when DMF is added. Unlike isooctane, the DMF molecule does not consume H radicals during its primary breakup. Therefore, the maximum laminar burning velocity increases marginally when 50% DMF is blended with isooctane due to the increased presence of H radicals in the flame. The negative temperature coefficient behaviour in the ignition delay time of the isooctane fuel vanishes when 30% DMF (v/v) is blended to it.     

Influence of annealing treatment on as-grown Ib-type diamond crystal at a high temperature and high pressure

In this paper,we report on the influence of annealing treatment on as-grown Ib-type diamond crystal under high pressure and high temperature in a china-type cubic anvil high-pressure apparatus.Experiments are carried out at a pressure of 7.0 GPa and temperatures ranging from 1700 C to 1900 C for 1 h.Annealing treatment of the diamond crystal shows that the aggregation rate constant of nitrogen atoms in the as-grown Ib-type diamond crystal strongly depends on diamond morphology and annealing temperature.The aggregation rate constant of nitrogen remarkably increases with the increase of annealing temperature and its value in octahedral diamond is much higher than that in cubic diamond annealed at the same temperature.The colour of octahedral diamond crystal is obviously reduced from yellow to nearly colorless after annealing treatment for 1 h at 1900 C,which is induced by nitrogen aggregation in a diamond lattice.The extent of nitrogen aggregation in an annealed diamond could approach approximately 98% indicated from the infrared absorption spectra.The micro-Raman spectrum reveals that the annealing treatment can improve the crystalline quality of Ib-type diamond characterized by a half width at full maximum at first order Raman peak,and therefore the annealed diamond crystals exhibit nearly the same properties as the natural IaA-type diamond stones of high quality in the Raman measurements.     

Experimental measurement of the electrical conductivity of pyroxenite at high temperature and high pressure under different oxygen fugacities

Electrical conductivities of pyroxenite were measured between frequencies of 10^?1 and 10⁶ Hz in a multi-anvil pressure apparatus using different solid buffers (Ni+NiO, Fe+Fe₃O₄, Fe+FeO and Mo+MoO₂) to stabilize the partial pressure of oxygen. The temperature ranged from 1073 to 1423 K (800 to 1200 °C) and the pressure from 1.0 to 4.0 GPa. We observe that: (1) the electrical conductivity (σ) of pyroxenite depends on frequency; (2) σ tends to increase with rising temperature (T), and Log σ and 1/T obey a linear Arrhenius relationship; (3) under control of the buffer Fe+Fe₃O₄, σ tends to decrease with rising pressure, nevertheless the activation enthalpy tends to increase. For the first time we have obtained values for the activation energy and activation bulk volume of the main charge carriers, which are (1.60±0.07) eV and (0.05±0.03) cm³/mol, respectively; (4) for a given pressure and temperature, σ tends to rise with increased oxygen fugacity, whereas the activation enthalpy and preexponential factor tend to decrease; and (5) the behaviour of the electrical conductivity at high temperature and high pressure can be reasonably interpreted by assuming that small polarons provide the dominant conduction mechanism in the pyroxenite samples.     

Synergistic influences of titanium,boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature

The synergistic influences of boron, oxygen, and titanium on growing large single-crystal diamonds are studied using different concentrations of B₂O₃ in a solvent-carbon system under 5.5 GPa-5.7 GPa and 1300 ℃-1500 ℃. It is found that the boron atoms are difficult to enter into the crystal when boron and oxygen impurities are doped using B₂O₃ without the addition of Ti atoms. However, high boron content is achieved in the doped diamonds that were synthesized with the addition of Ti. Additionally, boron-oxygen complexes are found on the surface of the crystal, and oxygen-related impurities appear in the crystal interior when Ti atoms are added into the FeNi-C system. The results show that the introduction of Ti atoms into the synthesis cavity can effectively control the number of boron atoms and the number of oxygen atoms in the crystal. This has important scientific significance not only for understanding the synergistic influence of boron, oxygen, and titanium atoms on the growth of diamond in the earth, but also for preparing the high-concentration boron or oxygen containing semiconductor diamond technologies.     

Characterization of the effects of pressure and hydrogen concentration on laminar burning velocities of methane–hydrogen–air mixtures

The aim of the present work was to characterize both the effects of pressure and of hydrogen addition on methane/air premixed laminar flames. The experimental setup consists of a spherical combustion chamber coupled to a classical shadowgraphy system. Flame pictures are recorded by a high speed camera. Global equivalence ratios were varied from 0.7 to 1.2 for the initial pressure range from 0.1 to 0.5 MPa. The mole fraction of hydrogen in the methane + hydrogen mixture was varied from 0 to 0.2. Experimental results were compared to calculations using a detailed chemical kinetic scheme (GRIMECH 3.0). First, the results for atmospheric laminar CH₄/air flames were compared to the literature. Very good agreements were obtained both for laminar burning velocities and for burned gas Markstein length. Then, increasing the hydrogen content in the mixture was found to be responsible for an increase in the laminar burning velocity and for a reduction of the flame dependence on stretch. Transport effects, through the reduction of the fuel Lewis number, play a role in reducing the sensitivity of the fundamental flame velocity to the stretch. Finally, when the pressure was increased, the laminar burning velocity decreased for all mixtures. The pressure domain was limited to 0.5 MPa due to the onset of instabilities at pressures above this value.     

Effect of pH and high pressure at sub-zero temperature on the viability of some bacteria

The objective of this study was to investigate the viability of Escherichia coli and Staphylococcus aureus in apple juice after treatment with high pressure at sub-zero temperature and during subsequent storage at 5 and 20 °C. The viability of E. coli and S. aureus cells suspended in the apple juice with a pH of 3.8 did not decrease considerably after pressure treatment at 193 MPa and?20 °C. However, viability losses occurred during storage of samples after pressure treatment. Living cells of both strains were not detected in pressurized samples of apple juice stored for 10 days at 20°C. The lethal effect was lower when the samples after pressure treatment were incubated at refrigerated temperature; the number of E. coli and S. aureus decreased by 6 log cycles when the juice was stored for 10 days at 5 °C.     

Experimental study of H2O spectroscopic parameters in the near-IR (6940-7440 cm) for gas sensing applications at elevated temperature

Tunable diode laser (TDL) absorption sensors of water vapor are attractive for temperature, gas composition, velocity, pressure, and mass flux measurements in a variety of practical applications including hydrocarbon-fueled combustion systems. Optimized design of these sensors requires a complete catalog of the assigned transitions with accurate spectroscopic data; our particular interest has been in the 2ν₁, 2ν₃, and ν₁+ν₃ bands in the near-IR where telecommunications diode lasers are available. In support of this need, fully resolved absorption spectra of H₂O vapor in the spectral range of 6940-7440 cm⁻¹ (1344-1441 nm) have been measured as a function of temperature (296-1000 K) and pressure (1-800 Torr), and quantitative spectroscopic parameters inferred from these spectra compared to published data from Toth, HITRAN 2000 and HITRAN 2004. The peak absorbances were measured for more than 100 strong transitions at 296 and 828 K, and linestrengths determined for 47 strong lines in this region. In addition to reference linestrengths S(296 K), the air-broadening coefficients γ_air(296 K) and temperature exponents n were inferred for strong transitions in five narrow regions, near 7185.60, 7203.89, 7405.11, 7426.14 and 7435.62 cm⁻¹ that had been targeted as attractive for future diagnostics applications. Most of the measured results, determined within an accuracy of 5%, are found to be in better agreement with HITRAN 2004 than with earlier editions of this database. Large discrepancies (>10%) between measurements and HITRAN 2004 database are identified for some of the probed transitions. These new spectroscopic data for H₂O provide a useful test of the sensor design capabilities of HITRAN 2004 for combustion and other applications at elevated temperatures.     

Characterization of the oxides formed at 1000 °C on the AISI 304 stainless steel by X-ray diffraction and infrared spectroscopy

The aim of this work is to show the contribution of the infrared spectroscopy (FT-IR) to the identification of the oxides formed on the AISI 304 stainless steel during isothermal oxidation at 1000 °C, in air. This work focuses on the differentiation of spinel type AB₂O₄ structures and corundum type M₂O₃ structures. It is shown that after 100 h oxidation, the scale is composed of two subscales. The structural analyses were performed both on the adherent subscale and on the external subscale, which spalled off during cooling to room temperature. In the spalled subscale, the infrared spectroscopy (FT-IR) and X-ray diffraction (XRD) analyses exhibit the presence of two spinel phases: Mn_1.5Cr_1.5O₄ and FeCr₂O₄, as well as hematite Fe₂O₃. The FT-IR and XRD analyses of the adherent subscale enable us to distinguish the spinel Mn_1.5Cr_1.5O₄ and FeCr₂O₄ structures which are difficult to identify by XRD alone. Chromia Cr₂O₃ appears to be slightly present in the adherent subscale. According to our results, the parabolic regime of the kinetic curve corresponds to a scale growth mechanism governed by an inward oxygen diffusion.     

Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar + H2 ambient at low temperature

Al-doped ZnO (AZO) transparent conductive thin films were grown by magnetron sputtering with AZO (98 wt.% ZnO, 2 wt.% Al₂O₃) ceramic target in Ar + H₂ ambient at a relatively low temperature of 100 °C. To investigate the dependence of crystalline and properties of as-grown AZO films on the H₂-flux, X-ray diffraction (XRD), X-ray photoemission spectrometer (XPS), Hall and transmittance spectra measurements were employed to analyze the AZO samples deposited with different H₂-flux. The results indicate that H₂-flux has a considerable influence on the transparent conductive properties of AZO films. The resistivity of 4.15 × 10⁻⁴ Ω cm and the average transmittance of more than 94% in the visible range were obtained with the optimal H₂-flux of 1.0 sccm. Such a low temperature growing method present here may be especially useful for some low-melting point photoelectric devices and substrates.     

Influence of temperature and frequency on the electrical parameters of thermally evaporated metal-free phthalocyanine H<Subscript>2</Subscript>Pc thin films

The ac electrical properties of metal-free phthalocyanine (H₂PC) thin films have been studied in the frequency range from 10² to 2×10⁴ Hz and in the temperature range from 150 to 475 K. The ac conductivity σ was found to vary as ω^s with the index s≤1. Although these general values of s appear to be consistent with a hopping process, the present σ values do not increase monotonically with temperature. At low frequency, the capacitance and loss tangent were found to be constant over the entire frequency range, in good qualitative agreement with the equivalent circuit model consisting of an inherent capacitance in parallel with a resistive element. Moreover, at constant frequency, the two parameters increased with increasing temperature up to approximately 300 K. Above this temperature, another sharp decrease in both capacitance and loss tangent was obtained. This type of behavior was interpreted in terms of nomadic (delocalized) polarization, which leads to an increase in the dielectric constant. The drastic decrease of the capacitance and loss tangent observed above room temperature is thought to be related to the decrease in the dielectric constant, which results from the inability of the domains to hold the increases in free charge carrier concentration due to the increase of temperature. Received: 6 December 2001 / Accepted: 7 January 2002 / Published online: 19 July 2002 RID="*" ID="*"Corresponding author. Fax: +972-2/279-6960, E-mail: asaleh@science.alquds.edu     

Influence of the surface-termination of hexagonal SiC(0 0 0 1) on the temperature dependences of Ge growth modes and desorption

With the aim of comparing initial Ge adsorption and desorption modes on different surface terminations of 4H-SiC(0 0 0 1) faces, 3 × 3, √3×√3R30° (R3) and 6√3×6√3R30° (6R3) reconstructions, of decreasing Si surface richness, have been prepared by standard surface preparation procedures. They are controlled by reflection high energy electron diffraction (RHEED), low energy electron diffraction and photoemission. One monolayer of Ge has been deposited similarly at room temperature on each of these three surfaces, followed by the same set of isochronal heatings at increasing temperatures up to complete Ge desorption. At each step of heating, the structural and chemical status of the Ge ad-layer has been probed. Marked differences between the Si- (3 × 3 and R3) and C-rich (6R3) terminations have been obtained. Ge wetting layers are only obtained up to 400 °C on 3 × 3 and R3 surfaces in the form of a 4 × 4 reconstruction. The wetting is more complete on the R3 surface, whose atomic structure is the closest to an ideally Si-terminated 1 × 1 SiC surface. At higher temperatures, the wetting layer stage transiets in Ge polycrystallites followed by the unexpected appearance on the 3 × 3 surface of a more ordered Si island structure. It denotes a Si clustering of the initial Si 3 × 3 excess, induced by the presence of Ge. A phase separation mechanism between Si and Ge prevails therefore over alloying by Ge supply onto a such Si-terminated 3 × 3 surface. Conversely, no wetting is obtained on the 6R3 surface and island formation of exclusively pure Ge takes place already at low temperature. These islands exhibit a better epitaxial relationship characterized by Ge(1 1 1)//SiC(0 0 0 1) and Ge〈1 1 −2〉//SiC〈1 −1 0 0〉, ascertained by a clear RHEED spot pattern. The absence of any Ge-C bond signature in the X-ray photoelectron spectroscopy Ge core lines indicates a dominant island nucleation on heterogeneous regions of the surface denuded by the 6R3 graphite pavings. Owing to the used annealing cycles, the deposited Ge amount desorbs on the three surfaces at differentiated temperatures ranging from 950 to 1200 °C. These differences probably reflect the varying morphologies formed at lower temperature on the different surfaces. Considering all these results, the use of imperfect 6R3 surfaces appears to be suited to promote the formation of pure and coherent Ge islands on SiC.     

Effects of oxygen partial pressure and substrate temperature on the structure and optical properties of MgxZn1−xO thin films prepared by magnetron sputtering

Deposited with different oxygen partial pressures and substrate temperatures, Mg_xZn_1−xO thin films were prepared using a Mg_0.6Zn_0.4O ceramic target by magnetron sputtering. The structural and optical properties of the prepared thin films were investigated. The X-ray diffraction spectra reveal that all the films on quartz substrate are grown along (2 0 0) orientation with cubic structure. The lattice constant decreases and the crystallite size increases with the increase of substrate temperature. Both energy dispersive X-ray spectroscopy and calculated results suggest the ratio of Mg/Zn increases with increasing substrate temperature. The thin film deposited with T_s = 500 °C has a minimal rms roughness of 7.37 nm. The transmittance of all the films is higher than 85% in the visual region. The optical band gap is not sensitive to the oxygen partial pressure, while it increases from 5.63 eV for T_s = 100 °C to 5.95 eV for T_s = 700 °C. In addition, the refractive indices calculated from transmission spectra are sensitive to the substrate temperature. The photoluminescence spectra of Mg_xZn_1−xO thin films excited by 330 nm ultraviolet light indicate that the peak intensity of the spectra is influenced by the oxygen partial pressure and substrate temperature.