Spin-driven jahn-teller distortion in a pyrochlore system

The ground-state properties of the spin-1 antiferromagnetic Heisenberg model on the corner-sharing tetrahedra, the pyrochlore lattice, are investigated. By breaking up each spin into a pair of 1/2-spins, the problem is reduced to the equivalent one of the spin-1/2 tetrahedral network in analogy with the valence bond solid state in one dimension. The twofold degeneracy of the spin singlets of a tetrahedron is lifted by a Jahn-Teller mechanism, leading to a cubic to tetragonal structural transition. It is proposed that the present mechanism is responsible for the phase transition observed in the spin-1 spinel compounds ZnV2O4 and MgV2O4.     

Electronic structures of MRhO2, MRh2O4, RhMO4 and Rh2MO6 on the basis of X-ray spectroscopy and ESCA data

X-ray O Kα, Rh Mγ and a series of M Lα emission spectra, ESCA spectra of the valence and inner levels, and O K and Rh M_III quantum-yield spectra for X-ray photoemission of the rhodium double oxides MRhO₂ (M = Li, Na, K), MRh₂ O₄ (M = Be, Mg, Ca, Sr, Ba, Co, Ni, Cu, Zn, Cd, Pb), RhMO₄ (M = V, Nb, Ta) and Rh₂MO₆ (M = Mo, W) have been measured and the dependence of electronic structure on the metal M analysed. For all compounds the inner part of the valence band corresponds to O 2p_σ + O 2p_π + Rh 4d states, while the outer part corresponds to Rh 4d. The valence band is separated from the conduction band by a narrow gap of width less than 1 eV. The first empty band, near the bottom of the conduction band, is formed by Rh 4d states, followed by a band due to vacant O 2p states.     

第一原理研究Sn(O1-xNx)2材料的光电磁性质

基于第一原理的密度泛函理论, 以量子化学从头计算软件 为平台研究了Sn(O_1-xN_x)₂材料的光电磁性能, 分析了体系的态密度、 能带结构、 磁性、 介电虚部及折射率. 计算结果表明, N替代O后, 随着掺杂浓度的增加, 体系的带隙先减小后增大, 掺杂量为12.50%时带隙最窄. 由于N 2p轨道电子的贡献, 在0.55-1.05 eV范围内产生了浅受主能级, 价带和导带处的能级均出现了劈裂及轨道的重叠现象, Sn-O键的键强大于N-O键的键强. 从磁性来看, N原子决定了磁矩的大小. 从介电虚部可知, 掺杂后体系的光学吸收边增宽, 主跃迁峰发生红移, 反射率和介电谱相对应, 各峰值与电子的跃迁吸收有关.     

Magnetic and electrical properties of the equiatomic cerium germanides CeMGe (M = Rh, Ir, Pd, Pt)

From X-ray Guinier powder data the crystal structures of the ternary germanides Ce(Rh or Ir)Ge and Ce(Pd or Pt)Ge were confirmed to be of the TiNiSi-type and the CeCu₂-type, respectively. Magnetic, electrical and thermodynamic properties of these materials have been studied in the temperature range 1.5 K T 300 K. CeRhGe orders antiferromagnetically below 9.3 K, whereas in CeIrGe cerium is in an intermediate valence state and no magnetic transition is observed down to 1.5 K. Resistivity and specific heat measurements reveal a magnetic transition near 3.4 K for both CePdGe and CePtGe. According to the present investigations the compounds CeMGe, with M = Rh, Pd, Pt are classified as magnetically ordered Kondo systems.     

Deep-center photoluminescence in undoped semi-insulating GaAs: 0.68 eV band due to the main deep donor

The 0.68 eV photoluminescence band present in undoped semi-insulating GaAs crystals has been studied with the change of temperature. It is shown that the 0.68 eV band is due to the radiative transition involving a main deep donor and the valence band. The origin of the donor is of an intrinsic origin and may involve an As antisite defect. It is found that the donor level does not change in energy with respect ot the valence band at T = 4–300 K. The donor level is found to be at 0.73 eV from the conduction band at T = 4 K.     

Evolution of magnetic properties in the normal spinel solid solution Mg(1-x)Cu(x)Cr2O4

We examine the evolution of magnetic properties in the normal spinel oxides Mg(1-x)Cu(x)Cr2O4 using magnetization and heat capacity measurements. The end-member compounds of the solid solution series have been studied in some detail because of their very interesting magnetic behavior. MgCr2O4 is a highly frustrated system that undergoes a first-order structural transition at its antiferromagnetic ordering temperature. CuCr2O4 is tetragonal at room temperature as a result of Jahn-Teller active tetrahedral Cu2+ and undergoes a magnetic transition at 135 K. Substitution of magnetic cations for diamagnetic Mg2+ on the tetrahedral A site in the compositional series Mg(1-x)Cu(x)Cr2O4 dramatically affects magnetic behavior. In the composition range 0 ≤ x ≤ ≈0.3, the compounds are antiferromagnetic. A sharp peak observed at 12.5 K in the heat capacity of MgCr2O4 corresponding to a magnetically driven first-order structural transition is suppressed even for small x. Uncompensated magnetism--with open magnetization loops--develops for samples in the x range ≈0.43 ≤ x ≤ 1. Multiple magnetic ordering temperatures and large coercive fields emerge in the intermediate composition range 0.43 ≤ x ≤ 0.47. The Néel temperature increases with increasing x across the series while the value of the Curie-Weiss Θ(CW) decreases. A magnetic temperature-composition phase diagram of the solid solution series is presented.     

GaAs(100)表面(4×1)结构的UPS研究

用偏振的紫外光源测量了GaAs(100)表面(4×1)结构的UPS谱,从清洁表面和吸附氧以后UPS的差谱中辨别出了在价带顶以下2eV以内的表面态峰,根据用偏振光所得到的谱和跃迁选择定则的讨论,认为表面态包含了三个峰,价带顶以下0.5eV处有一个对应于表面Ga原子桥键态的峰,在0.7eV处有对应于表面As原子桥键态的峰,而在1.3eV处的峰则同表面原子的悬键态相联系。 关键词：     

Oxygen-17 superhyperfine structure of Rh2+ Jahn-Teller ions in MgO

EPR spectra of the Rh²⁺ impurity centers in MgO crystals labelled with oxygen-17 are reported. Measurements were made at 4.2 K and around liquid nitrogen temperature, which correspond to the (quasi) static and fast averaging regimes of the Jahn-Teller effect. In both temperature ranges satellites due to superhyperfine interaction with ¹⁷O nuclei were observed. The results are analyzed in terms of the covalency parameters of the RhO bond.     

Irreversible dynamics of the phase boundary in U(Ru0.96Rh0.04)2Si2 and implications for ordering

We report measurements and analysis of the specific heat and magnetocaloric effect-induced temperature changes at the phase boundary into the single magnetic field-induced phase (phase II) of U(Ru0.96Rh0.04)2Si2, which yield irreversible properties similar to those at the valence transition of Yb(1-x)Y(x)InCu4. To explain these similarities, we propose a bootstrap mechanism by which lattice parameter changes caused by an electric quadrupolar order parameter within phase II become coupled to the 5f-electron hybridization, giving rise to a valence change at the transition.     

Si–Si bond as a deep trap for electrons and holes in silicon nitride

A two-stage model of the capture of electrons and holes in traps in amorphous silicon nitride Si₃N₄ has been proposed. The electronic structure of a “Si–Si bond” intrinsic defect in Si₃N₄ has been calculated in the tight-binding approximation without fitting parameters. The properties of the Si–Si bond such as a giant cross section for capture of electrons and holes and a giant lifetime of trapped carriers have been explained. It has been shown that the Si–Si bond in the neutral state gives shallow levels near the bottom of the conduction band and the top of the valence band, which have a large cross section for capture. The capture of an electron or a hole on this bond is accompanied by the shift of shallow levels by 1.4–1.5 eV to the band gap owing to the polaron effect and a change in the localization region of valence electrons of atoms of the Si–Si bond. The calculations have been proposed with a new method for parameterizing the matrix elements of the tightbinding Hamiltonian taking into account a change in the localization region of valence electrons of an isolated atom incorporated into a solid.     

Deconfined criticality: generic first-order transition in the SU(2) symmetry case

Monte Carlo simulations of the SU(2)-symmetric deconfined critical point action reveal strong violations of scale invariance for the deconfinement transition. We find compelling evidence that the generic runaway renormalization flow of the gauge coupling is to a weak first-order transition, similar to the case of U(1) x U(1) symmetry. Our results imply that recent numeric studies of the Nèel antiferromagnet to valence bond solid quantum phase transition in SU(2)-symmetric models were not accurate enough in determining the nature of the transition.     

Metal-insulator transitions: influence of lattice structure, jahn-teller effect, and Hund's rule coupling

We study the influence of the lattice structure, the Jahn-Teller effect, and the Hund's rule coupling on a metal-insulator transition in A(n)C60 (A = K,Rb). The difference in the lattice structure favors A3C60 (fcc) being a metal and A4C60 (bct) being an insulator, and the coupling to H(g) Jahn-Teller phonons favors A4C60 being nonmagnetic. The coupling to H(g) ( A(g)) phonons decreases (increases) the value U(c) of the Coulomb integral at which the metal-insulator transition occurs. There is an important partial cancellation between the Jahn-Teller effect and the Hund's rule coupling.     

A valence band photoemission study of Pb adsorption on Rh(1 0 0) and Rh(1 1 0)

We have studied the adsorption of Pb on the Rh(1 0 0) and (1 1 0) surfaces by photoemission and low energy electron diffraction (LEED), and tested the chemical properties by adsorption of CO. Pb forms two distinct c(2 × 2) phases on Rh(1 0 0), according to the temperature of the substrate. The phase formed below about 570-620 K, denoted α-c(2 × 2), reduces the coverage of adsorbed CO but does not affect the valence band spectrum of the molecule. The phase formed above this temperature, denoted β-c(2 × 2), also reduces the coverage of adsorbed CO but the valence band spectrum of the adsorbed CO is strongly affected. The two phases are also characterised by a slightly different binding energy of the Pb 5d_5/2 level, 17.54 eV for the α phase and 17.70 for the β phase. The Pb/Rh(1 1 0) surface shows two ordered Pb induced phases, c(2 × 2) and p(3 × 1). CO adsorbs on the first with reduced heat of adsorption and with a valence band spectrum that is strongly altered with respect to CO adsorbed on clean Rh(1 1 0), but does not adsorb on the p(3 × 1) structure at 300 K. We compare the present results with previous results from related systems.     

Electronic structure of ZnS:Co and ZnSe:Co crystals

The x-ray photoelectron spectra of the valence bands and inner Co 2p levels of solid solutions of the wide-gap semiconductors ZnS, ZnS:Co, ZnSe, and ZnSe:Co are investigated. The x-ray photoelectron Co 2p spectrum of the ZnS:Co crystal indicates a 3d configuration of the ground state of cobalt and strong covalence of the cobalt-sulfur bond, but somewhat weaker than for CoS. It is established that the edge of the valence band recedes by 0.7±0.1 eV in transition from ZnSe to ZnS. Fiz. Tverd. Tela (St. Petersburg) 39, 1971–1974 (November 1997)     

Band Jahn-Teller type structural transition in La3−xS4 compounds

La-chalcogenides La₃S₄ in pure state or with small number of vacancies at La-sites undergo cubic to tetragonal structural transition which can be explained on the basis of a band Jahn-Teller model. Some characteristics of band Jahn-Teller transition associated with a two-fold degenerate band are discussed on the background of the recent experimental results on La_3?xS₄ compounds.     

X-ray microanalysis of quaternary semiconductor solid solutions and its application to the (SnTe-SnSe):In system

A reliable technique of local chemical characterization of multicomponent semiconductor solid solutions has been developed, and the possibility of its application to the SnTe-SnSe quaternary solid solutions doped with 16 at.% In verified. The behavior of the electrical resistivity of samples of these solid solutions at low temperatures, 0.4–4.2 K, has been studied. The critical temperature T _c and the second critical magnetic field H _c2 of the superconducting transition and their dependences on the solid-solution composition have been determined. The superconducting transition at T _c≈2–3 K is due to hole filling of the In-impurity resonance states, and the observed variation of the superconducting transition parameters with increasing Se content in the solid solution is related to the extrema in the valence band and the In band of resonance states shifting with respect to one another. Fiz. Tverd. Tela (St. Petersburg) 41, 612–617 (April 1999)     

GaAs中Cr2+离子的发光及杨—泰勒效应

在各向同性压力下,观察到77°K时n—GaAs样品中Cr2+离子的光致发光。这个光谱带是由Cr2+离子的激发态5E到基态5T2的跃迁所致。由于Cr2+离子在晶体场中有较强的杨一泰勒效应,时发光光谱产生影响。本文考虑静态杨一泰勒效应计算了发射光潴,估计了杨一泰勒能量,并与实验结果相比较。     

Valence bond entanglement entropy

We introduce for SU(2) quantum spin systems the valence bond entanglement entropy as a counting of valence bond spin singlets shared by two subsystems. For a large class of antiferromagnetic systems, it can be calculated in all dimensions with quantum Monte Carlo simulations in the valence bond basis. We show numerically that this quantity displays all features of the von Neumann entanglement entropy for several one-dimensional systems. For two-dimensional Heisenberg models, we find a strict area law for a valence bond solid state and multiplicative logarithmic corrections for the Néel phase.     

硅中的过渡元素杂质能级

本文提出了半导体中过渡元素杂质的一个简单模型,用格林函数方法计算了硅中替代和间隙原子产生的杂质能级和波函数。发现两者的性质有很大的差别。替代原子只有当d原子能级V_d低于价带顶时才能产生杂质能级。它的波函数主要是悬键态,当能级靠近导带边时变成正键态。间隙原子只有当V_d高于价带顶时才能产生杂质能级。它的波函数主要是中心原子d态,当能级靠近导带边时变成弱反键态。最后定性地说明了过渡元素杂质能级的化学趋势和一些实验事实。 关键词：     

Square-lattice algebraic spin liquid with SO(5) symmetry

We propose a critical spin liquid ground state for S=1/2 antiferromagnets on the square lattice. In a renormalization group analysis of the "staggered flux" algebraic spin liquid, we examine perturbations, present in the antiferromagnet, which break its global SU(4) symmetry to SO(5). At physical parameter values, we find an instability towards a fixed point with SO(5) symmetry. We discuss the possibility that this fixed point describes a transition between the Néel and valence bond solid states, and the relationship to the SO(5) nonlinear sigma model of Tanaka and Hu.