LiF中空位形成能的第一性原理计算

采用平面波展开和基于密度泛函理论框架下的第一性原理赝势法,计算了102GPa下LiF化合物中Li空位和F空位的形成能及空间周围的原子弛豫,讨论了空位形成时电荷密度的重新分布,相应的电子态密度以及能带结构等性质.结果表明:LiF晶体中F空位的形成能比大于Li空位的形成能;F空位对LiF晶体的电子结构等性质的影响要比Li空位的大.     

LiAl中空位形成能的第一原理计算

LiAl是一种非常典型和有重要用途的金属间化合物.采用平面波展开和第一原理赝势法，计算了LiAl化合物中Li空位和Al空位的形成能和空位周围的原子弛豫，讨论了空位形成时电荷密度的重新分布、相应的电子态密度以及能带结构等性质. 关键词： LiAl 空位形成能 第一原理计算     

锂离子电池富锂锰基三元材料中氧空位簇的形成:第一原理计算

采用第一原理方法计算了两种不同镍含量的锂离子电池富锂锰基三元正极材料Li_1.2Ni_0.32Co_0.04Mn_0.44O₂(空间群为■)和Li_1.167Ni_0.167Co_0.167Mn_0.5O₂ (空间群为C2/m)中氧空位簇的形成能.结果表明,含镍量较少的Li_1.167Ni_0.167Co_0.167Mn_0.5O₂正极材料中氧空位簇的形成能总是高于含镍量较多的Li_1.2Ni_0.32Co_0.04Mn_0.44O₂材料中的氧空位簇形成能,这说明含镍量较高的正极材料中氧空位簇更容易形成.无论是含镍量较高的富锂锰基材料,还是含镍量较少的同类材料,过渡金属边上的氧空位簇的...     

第一性原理研究空位点缺陷对高压下LiF的电子结构和光学性质的影响

基于密度泛函理论框架下的平面波超软赝势方法,分别计算了102GPa压力下LiF理想晶体、含Li^-1空位和F⁺¹空位点缺陷晶体时的电子结构和光学性质.结果表明: 空位点缺陷的存在使得LiF能隙中出现了缺陷态;在可见光范围内,空位点缺陷的存在不会影响LiF的高压光吸收性(吸收系数仍为零); 在紫外光波段,Li^-1空位存在时在约99—114 nm波段内出现了弱的吸收, F⁺¹空位存在时在约99—262 nm波段内出现了明显的吸收; Li^-1,F⁺¹两种空位分别存在时对LiF的反射谱和能量损失谱产生的影响都集中在紫外光区,与对光吸收产生的影响相似. 关键词： LiF 第一性原理 空位点缺陷 光学透明性     

LiF中空位形成能的第一性原理计算

采用平面波展开和基于密度泛函理论框架下的第一性原理赝势法,计算了102GPa下LiF化合物中Li空位和F空位的形成能及空间周围的原子弛豫,讨论了空位形成时电荷密度的重新分布,相应的电子态密度以及能带结构等性质.结果表明:LiF晶体中F空位的形成能比大于Li空位的形成能;F空位对LiF晶体的电子结构等性质的影响要比Li空位的大.     

空位的第一性原理及经验势函数的对比研究

利用第一性原理及Stillinger-Weber（SW）,EDIP和Tersoff经验势函数对比研究了硅中单空位(V₁)、双空位(V₂)和六边形空位环(V₆)的结构特性及形成能.讨论了经验势函数描述空位时的优点和缺点.结果发现,第一性原理方法可以精确描述空位的原子结构及能量特性,而短程有效的经验势函数无法描述空位所固有的量子效应,如Jahn-Teller变形等.另外,由于经验势函数自身的缺陷,EDIP和T3无法应用于空位结构特性的计算.虽然 关键词： 空位 第一性原理 经验势函数     

InSb的锂嵌入形成能第一原理计算

InSb材料在近来的锂离子电池负极材料研究中受到了重视.使用基于局域密度泛函理论的第一原理赝势法，计算了锂离子电池非碳类负极材料InSb各种锂嵌入情况时的形成能以及相应的电子结构.讨论了锂嵌入时的体积变化、能带结构、电子态密度以及电荷分布等性质.计算发现，闪锌矿结构的InSb材料，锂嵌入到主体材料的间隙位置时的形成能平均每个锂原子都在2.2eV左右. 关键词： InSb 锂嵌入形成能 电子结构 第一原理计算     

钪与氧空位共掺杂锐钛矿相TiO2的形成能与电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理研究了钪(Sc)、氧空位(O_V)单/共掺杂锐钛矿相TiO₂,对晶体结构、形成能以及电子结构进行了对比分析.研究结果表明,Sc-TiO₂在富氧环境下缺陷形成能为负值,富钛环境下缺陷形成能为正值,表明Sc-TiO₂只能在富氧环境下制备;O_V-TiO₂、Sc-O_V-TiO₂在富氧或富钛环境下缺陷形成能均为负值,但富氧环境下形成能更低;O_V-TiO₂的0/1-缺陷电荷转变能级为深能级,而Sc-TiO₂的0/1-缺陷电荷转变能级则属于相对较浅能级;与纯锐钛矿相TiO₂相比,Sc-TiO₂的禁带宽度略有减小,但O_V-TiO₂、Sc-O_V-TiO₂禁带宽度变宽.     

锐钛矿(TiO2)半导体的氧空位浓度对导电性能影响的第一性原理计算

基于低温重氧空位锐钛矿半导体的态密度计算,在同等条件下研究取不同大小模型的锐钛矿做适量浓度的氧空位存在,分别对进入导带的相对平均电子数和氧空位类杂质的散射迁移率进行计算,之后对电导率进行类比,发现锐钛矿半导体的导电性能对适量浓度低的氧空位有利可行得到了证明.同时,低温重氧空位的条件下,锐钛矿半导体的电导率不仅与氧空位浓度有关,而且和进入导带的平均电子数有关,和氧空位散射的电子迁移率有关的正确结论. 关键词： 锐钛矿半导体 氧空位浓度 电导率 第一性原理计算     

锐钛矿(TiO2)半导体的氧空位浓度对导电性能影响的第一性原理计算

基于低温重氧空位锐钛矿半导体的态密度计算，在同等条件下研究取不同大小模型的锐钛矿做适量浓度的氧空位存在，分别对进入导带的相对平均电子数和氧空位类杂质的散射迁移率进行计算，之后对电导率进行类比，发现锐钛矿半导体的导电性能对适量浓度低的氧空位有利可行得到了证明.同时，低温重氧空位的条件下，锐钛矿半导体的电导率不仅与氧空位浓度有关，而且和进入导带的平均电子数有关，和氧空位散射的电子迁移率有关的正确结论.     

First-principles study on electronic and optical properties of Cu-doped LiF with Li vacancy

Taken into account the presences of Li vacancy (V_Li), we calculate the formation energy, electronic structure and optical properties of Cu doped LiF (LiF:Cu) by using the density functional theory. The presence of V_Li leads to a decrease of the formation energies of Cu, in favor of Cu doping into LiF. Due to Cu doping, an impurity band of Cu-3d states is formed at the Fermi level, which is then split by the introduction of V_Li. A wide absorption band and some new absorption peaks are obtained in LiF:Cu with an adjacent V_Li to Cu. There appears an absorption peak at 9.3 eV, which is consistent with the experiment observation (133 nm). The results are useful for understanding of the optical properties of the doped systems.     

Equilibrium molecular energies used to obtain molecular dissociation energies and heats of formation within the bond-order correlation approach

Ab initio calculations including electron correlation are still extremely costly, except for the smallest atoms and molecules. Therefore, our purpose in the present study is to employ a bond-order correlation approach to obtain, via equilibrium molecular energies, molecular dissociation energies and heats of formation for some 20 molecules containing C, H, and O atoms, with a maximum number of electrons of around 40. Finally, it is important in the proposed procedure to include electron correlation effects in the basis set choice when determining thermodynamic properties. With the optimum choice of basis set, the average percentage error for some 20 molecules is approximately 20% for heats of formation. For molecular dissociation energies the average error is much smaller: ～0.4%.     

First-principles calculations of the structural, electronic, and optical properties of LiF up to 300 GPa

The structural, electronic, and optical properties of LiF are investigated at high pressures using the plane-wave pseudo-potential density functional method (DFT) within the generalized gradient approximation (GGA). From the analysis of Gibbs free energies, we find that no phase transition takes place for LiF in the presented pressure range from 0 to 300 GPa. The result is consistent with the theoretical prediction obtained from the ab initio calculations [N.A. Smirnov, Phys. Rev. B 83 (2011) 014109] that the rock-salt structure is thermodynamically stable up to 1000 GPa. Meanwhile, good agreement between the calculated equation of state parameters and the experimental results is obtained, and a direct energy gap of 8.65 eV is estimated in the DFT-GGA for LiF with rock-salt structure. In addition, the dielectric function and optical properties such as reflectivity, absorption coefficient, and refractive index dependence of the photon energy from 0 to 50 eV and wavelength from 0 to 200 nm at different pressures are also calculated and analyzed. It is found that the rock-salt LiF is transparent from the partially ultra-violet to the visible light area and hardly is the transparence affected by the pressure. Furthermore, the curve of optical spectrum will shift to high energy area with increasing pressure.     

First-principles study of strain effect on the formation and electronic structures of oxygen vacancy in SrFeO_2

Motivated by recent experimental observations of metallic conduction in the quasi-two-dimensional SrFeO_2, we study the epitaxial strain effect on the formation and electronic structures of oxygen vacancy(Vo) by first-principles calculations.The bulk SrFeO_2 is found to have the G-type antiferromagnetic ordering(G-AFM) at zero strain, which agrees with the experiment. Under compressive strain the bulk SrFeO_2 keeps the G-AFM and has the trend of Mott insulator-metal transition.Different from most of the previous similar work about the strain effect on Vo, both the tensile strain and the compressive strain enhance the Vo formation. It is found that the competitions between the band energies and the electrostatic interactions are the dominant mechanisms in determining the Vo formation. We confirm that the Vo in SrFeO_2 would induce the n-type conductivity where the donor levels are occupied by the delocalized d_(x~2-y~2) electrons. It is suggested that the vanishing of n-type conductivity observed by the Hall measurement on the strained films are caused by the shift of donor levels into the conduction band. These results would provide insightful information for the realization of metallic conduction in SrFeO_2.     

Fe-Cr-Ni合金中点缺陷形成及相互作用的第一性原理研究

奥氏体不锈钢由于具有良好的力学性能和耐腐蚀性,被广泛应用于核电工业。奥氏体不锈钢受辐照会产生多种点缺陷,进而影响材料力学性能。为了研究304NG奥氏体不锈钢中点缺陷的产生机理,以面心立方Fe-Cr-Ni合金为模型,利用基于密度泛函理论的第一性原理方法研究了多种点缺陷结构的晶格常数,形成能,结合能,扩散迁移及相互作用,并计算了γ-Fe中相应的的性质作为对照.研究结果表明：Fe空位和Fe-Fe <100>哑铃是Fe-Cr-Ni合金中容易形成的点缺陷.基于对这两种点缺陷的迁移能垒分析,发现Fe-Fe <100>哑铃要比空位更易迁移.在Fe-Cr-Ni合金中相邻Fe空位存在吸引作用,会促进孔洞的形成;Fe空位-Fe-Fe <100>哑铃及Fe空位-Fe-Cr <100>哑铃均存在较弱的排斥作用,此外,在第一近邻位置和第二近邻位置的八面体间隙Fe原子都会和空位结合,使体系恢复为完整晶胞.     

First-principles study of ferromagnetism in Ti-doped ZnO with oxygen vacancy

Using first-principles density functional calculations, we have investigated the electronic structures of Ti-doped ZnO (Ti is in 4+ oxidation state) with and without oxygen vacancy. The ferromagnetic property is identified in the presence of oxygen vacancy despite Ti being nonmagnetic in its natural phase. The ferromagnetism originates from the charge transferring from donor derived-defect band to unoccupied Ti-3d states and the hybridization between Ti-3d and O-2p band near the Fermi level. On increasing the oxygen vacancy concentration, a transition from a long-ranged magnetic order to a short-ranged interaction is found and the oxygen vacancies prefer to distribute non-uniformly in Ti-doped ZnO.