Contribution of structural order-disorder to the room-temperature photoluminescence of lead zirconate titanate powders

Intense and broad visible photoluminescent (PL) band was observed at room temperature in structurally disordered PbZr_0.53Ti_0.47O₃ powders. The lead zirconate titanate PbZr_0.53Ti_0.47O₃ powders prepared by the polymeric precursor method and heat treated at different temperatures were structurally characterized at long range by means of X-ray diffraction. The PL was measured at room temperature samples heat treated at different temperatures. Experimental measurements and quantum-mechanical calculations showed that the high structural order and the high structural disorder in PbZr_0.53Ti_0.47O₃ lattice are not favorable to the intense PL emission. Only samples containing simultaneous structural order and disorder in their lattice present the intense visible PL emission at room temperature.     

Characterization of semiconductor core-shell nanoparticles by resonant Raman scattering and photoluminescence spectroscopy

Colloidal CdSe nanoparticles (NPs), passivated with CdS and ZnS, were characterized by resonant Raman scattering and photoluminescence (PL). The effect of the passivating shell, its volume and formation procedure on optical and vibrational spectra is discussed. Analyzing the Raman peaks due to optical phonons inside the core and those related to the core-shell interface allows some understanding of the relation between the core-shell structure and its PL properties to be achieved. In particular, a compositional intermixing at the core/shell interface of the NPs was deduced from the Raman spectra, which can noticeably affect their PL intensity.     

The influence of the coating metals with various work function on the photoluminescence of a GaN-based blue LED wafer

A GaN light emitting diodes (LED) wafer was coated with Pt, Au, Al and In. The photoluminescence (PL) excited from wafer back shows that Pt and Au coating can quench the PL while In and Al can increase the PL intensity by eight times and make the wavelength red shift. When connected to the Pt with a wire, indium can also quench the PL. The potential difference between any two kinds of the metals was measured and the PL intensity from each coated area showed a remarkable pertinence to the coating metal potentials. A built-in potential barrier model is proposed to explain results.     

Characterization of Ag nanoparticles on Si wafer prepared using Tollen's reagent and acid-etching

Ag nanoparticles on SiO₂/Si surfaces synthesized using the Tollen's reagent and a subsequent acid-etching were characterized using X-ray photoelectron spectroscopy (XPS). Combining the reduction of the Tollen's reagent and the chemical etching, one can create naked Ag nanoparticles with various sizes in the size range below ∼10 nanometers (nm). The reduced particle size by the chemical etching was identified using positive core level shifts with increasing etching time. Ag nanoparticles smaller than ∼3 nm undergo a reversible oxidation and reduction cycle by reacting with H₂O₂/H₂O and a subsequent heating under vacuum to 150 °C, which was not found for the bulk counterparts and larger particles, demonstrating unique chemical properties of nanoparticles compared to the bulk counterparts.     

超薄LiTaO3晶片的键合减薄技术

在制造红外热释电探测器阵列过程中，需要利用超薄钽酸锂(LiTaO₃)晶片作为红外热释电探测器件的敏感层。通常LiTaO₃晶片的厚度远厚于红外热释电探测器件要求的厚度，所以需要采用键合减薄技术对LiTaO₃晶片进行加工处理。键合减薄技术主要包括：苯并环丁烯（BCB）键合、铣磨、抛光、加热剥离、刻蚀BCB。加工后得到面积为10mm×10mm、厚度为25μm的超薄单晶LiTaO₃薄膜，晶片厚度、表面粗糙度和面形精度比较理想。测得了LT晶片减薄后的热释电系数为1.6×10^-4Cm^-2K^-1。得到的单晶LiTaO₃薄膜满足红外热释电探测器敏感层的要求。     

High quality factors and room-temperature lasing in a modified single-defect photonic crystal cavity

We propose and analyze a new photonic crystal cavity design that supports a dipole mode with a quality factor greater than 20,000. Such a high quality factor is obtained by precise tuning of the cavity length with minimal disruption of the surrounding photonic crystal. A fabrication procedure based on dry etching of InGaAsP material in HI/H2/Ar is used to demonstrate photonic crystal lasers with smooth and straight sidewalls. These room-temperature lasers concentrate optical energy in air and are suitable for use as tunable lasers and chemical sensors.     

Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate

The junction properties of tunnel silicon oxide (SiO_x) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of ～0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (V_bi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiO_x, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiO_x layer. The C of depleting layer deviates from the normal linear curve in the 1/C²-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C^2+γ-V plots with γ > 0 leads to linear curves with a proper γ and the V_bi can still be estimated. We find that the V_bi is the range of 0.75–0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay.     

High quality CVD diamond: a Raman scattering and photoluminescence study

High quality synthetic diamonds were grown on single-crystal silicon by microwave plasma enhanced chemical vapour deposition (CVD). A careful optimisation of both the experimental setup and the growth parameters was necessary before that the achievement of the best results was made possible. The films were deposited using a CH₄-H₂ gas mixture at methane concentrations variable in the range 0.6-2.2%, while the substrate temperature was fixed at 750 ^°C. Raman spectroscopy and photoluminescence (PL) were utilised to monitor the quality of the deposited films and to study the spatial distribution of defects, respectively. Micro-Raman analysis shows that linewidths of the diamond peak lower than 2.4 cm^-1 can be easily measured at the growth surface, indicating that the crystalline quality of individual grains is comparable to that of the best natural diamonds. The excellent phase purity of the diamond microcrystals at the growth surface is witnessed by the complete absence of any non-diamond carbon feature and by a very weak luminescence background in the 1.6-2.4 eV spectral range. A worsening of the quality of the diamond particles is found moving from the growth surface towards the film-substrate interface. A photoluminescence feature at about 1.68 eV, commonly associated to Si impurities, is distinctly observed as the exciting laser beam is focused close to the interface. A progressive degradation of the global quality of the films is found with increasing methane concentration in the gas mixture, as witnessed by an increased PL background in the films grown at higher methane concentrations. Received 24 November 2000     

Silicon nano-wires fabricated by thermal evaporation of silicon wafer

Thin silicon nano-wires (SiNWs) with a diameter of 10–20 nm were fabricated by a simple thermal evaporation of silicon wafer at 1523 K. The gold produced by an electrochemical method was covered on the wafer surface as catalyst. It was found that the SiNWs are amorphous and its Raman peak shifted down maybe due to the effect of laser heating and quantum confinement. Finally, a temperature gradient growth model is suggested to explain the growth direction of SiNWs.     

翻边压电晶片激励Lamb波声场研究

压电晶片广泛应用于超声波检测领域,是激励和接收超声波的最主要器件之一。本文通过实验、有限元压电模拟和半解析数值模拟,研究用压电晶片在板中激励Lamb波,三种方法得到的Lamb波信号中S0模态非常吻合,A0模态处稍有差异。同时还分析了晶片的电极形态对声场分布以及声场能量的影响,声场随着电极面积比变化而变化。研究结果可为压电晶片的实际使用提供参考。     

ECR-CVD制备的非晶SiOxNy薄膜的光致蓝光发射

使用90%N2稀释的SiH4与O2作为前驱气体，利用微波电子回旋共振等离子体化学气相沉积（ECR CVD）方法制备了非晶氮氧化硅薄膜（a-SiOxNy）.红外吸收光谱的结果表明，a SiOxNy薄膜主要由Si O Si和Si N键的两相结构组成，在存在氧流量的情形下，薄膜主要成分是SiOx相，而在无氧流量的情形下，薄膜则主要是SiNx相.使用565eV的紫外光激发，发现SiOxNy薄膜出现了位于460nm的光致蓝光主峰，且其发光强度随着氧流量的降低而显著增强.根据缺陷态发光中心和SiNx蓝光发射能隙态模 关键词： ECR CVD 红外吸收光谱 非晶氮化硅薄膜 光致发光     

Temperature-modulated photoluminescence induced by photoexcitation in semiconductors

A new technique of temperature-modulated photoluminescence is reported. The periodic heating is induced by metastable optical radiation. An analysis is made of phase shifts. The technique is applied to GaP : N. The results are compared with those obtained with an external heater.     

Low-temperature photoluminescence of CoO excited by synchrotron radiation

We report the first observation of low-temperature luminescence of CoO crystals under synchrotron irradiation. At 8 K, the photoluminescence of CoO is characterized by smaller bandwidth and higher intensity relative to the corresponding photoluminescence band of NiO. The photoluminescence excitation spectra of CoO and NiO are similar. Position of the band related to charge transfer from oxygen ions to 3d-shell of cobalt ions is determined. The excitation energy is found to be 3.5 eV.     

Defects in separation by implanted oxygen wafer probed by monoenergetic positron beams

Defects in the separation by implanted oxygen (SIMOX) wafers were studied by monoenergetic positron beams. For the as-implanted specimen, vacancies introduced by ion implantation were found to form vacancy-oxygen complexes. After high temperature annealing, a drastic increase in the formation probability of positronium was observed. This suggests an introduction of open-spaces by the formation of an amorphous SiO₂. The present investigation shows that positrons provide a nondestructive probe for the detection of defects in SIMOX wafers and microstructures of SiO₂.     

Generation of dislocations introduced by bending stress in a Si wafer

Distribution and morphology for dislocations introduced in (001) Si wafers subjected to bending stress at 800°, 900°, and 1100°C were investigated. For wafers bent around a [110] axis at 900° and 1100°C, straight dislocations appeared along the [110] direction only near the neutral plane, and were absent at the surfaces where bending stress is greatest. However, for wafers bent at 800 °C, such straight dislocations were not formed. Dependence of the dislocation distribution and morphology on heat treatment temperature is explained on the basis of interaction between bending stress and SiO₂ precipitates introduced in bulk. Also, it was found that the straight [110] dislocations remained still near the neutral plane, even when additional reverse bending stress was applied around an axis parallel to the dislocations, but were transfered toward the tensile surface by bending around an axis normal to the dislocation direction.     

Surface modification of the nanoparticles by an atmospheric room-temperature plasma fluidized bed

Using hexamethyldisiloxane (HMDSO) monomer, the magnetic nanoparticles (NPs) of nickel oxide (NiO) were modified by using an atmospheric room-temperature plasma fluidized bed (ARPFB). The plasma gas temperature of the ARPFB was not higher than 325 K, which was favorable for organic polymerization. The plasma optical emission spectrum (OES) of the gas mixture consisting of argon (Ar) and HMDSO was recorded by a UV-visible monochromator. The as-treated NPs were characterized by means of scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the assembling NPs were isolated greatly after modified by the organosilicon polymer. Moreover, this treatment process changed the wettability of the NPs from super-hydrophilicity to super-hydrophobicity, and the contact angle (CA) of water on the modified NPs surface exceeded 150°. Therefore, the ARPFB is a prospective technology for the NPs surface modification according to the different requirements.     

Tunable photoluminescence of porous silicon by liquid crystal infiltration

The photoluminescence (PL) of porous silicon films has been investigated as a function of the amount of liquid crystal molecules that are infiltrated into the constricted geometry of the porous silicon films. A typical nematic liquid crystal 4-pentyl-4′-cyanobiphenyl was employed in our experiment as the filler to modify the PL of porous silicon. It is found that the originally red PL of porous silicon films can be tuned to blue by simply adjusting the amount of liquid crystal molecules in the microchannels of the porous films. The chromaticity coordinates are calculated for the recorded PL spectra. The mechanism of the tunable PL is discussed. Our results have demonstrated that the luminescent properties of porous silicon films can be efficiently tuned by liquid crystal infiltration.     

Low-temperature photoluminescence in germanium irradiated by fast neutrons

This study was carried out to investigate low-temperature (T=4.2 K) photoluminescence caused by interdopant recombination transitions in n-germanium irradiated by fast (epicadmium) reactor neutrons and subjected to “complete” annealing (+450°C, 24 h). It is shown that lines of interdopant radiative recombination observed in initial and in irradiated and annealed specimens are caused by both initial impurities and (mainly) dopants (As and Ga) implanted by transmutation as well as by defect sets stable at long-time high-temperature annealing that do not contain fine dopants. Belarusian State University, 4, F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 479–482, July–August, 1997.