基于量子点接触的开放双量子点系统电子转移特性

基于量子点接触探测器(QPC)理论上研究了双量子点(DQD)系统在耗散环境和纯退相环境影响下的电子转移特性.结果表明,耗散环境中探测器导致的退相干会增大平均电流和Fano factor随时间演化的值,并观察到量子芝诺效应的存在.在对称的DQD情况下,弛豫减小了平均电流随时间演化的震荡振幅.在非对称的DQD情况下,弛豫降低了Fano factor随时间演化的峰值.纯退相环境中测量会阻碍共隧穿过程中不同电流通道之间的转换,导致Fano factor的极高值.在对称的DQD情况下,增大纯退相速率会提高Fano factor.在非对称的DQD情况下,动力学随时间的演化对纯退相环境不敏感.另外,还发现探测器内n个电子的转移几率只受QPC与DQD耦合的影响.我们的结论可以为实验工作者研究电子输运特性提供理论参考.     

The phase of Fano resonance in Aharonov–Bohm interferometer with a quantum dot embedded

We study the Fano effect of a closed Aharonov–Bohm mesoscopic interferometer, with a quantum dot embedded in one of the paths, in the presence of dephasing which is introduced by the Büttiker model. An exact analytic formula of conductance including dephasing factor is derived and can be written as an extended Fano form with a complex Fano parameter q. While the total conductance is unitary, the coherent part has broken unitarity due to dephasing, and thus has continuous phase shift. Our results agree with recent experimental measurements.     

Magneto-conductance fingerprints of purely quantum states in the open quantum dot limit

We present quantum magneto-conductance simulations, at the quantum low energy condition, to study the open quantum dot limit. The longitudinal conductance G(E,B) of spinless and non-interacting electrons is mapped as a function of the magnetic field B and the energy E of the electrons. The quantum dot linked to the semi-infinite leads is tuned by quantum point contacts of variable width w. We analyze the transition from a quantum wire to an open quantum dot and then to an effective closed system. The transition, as a function of w, occurs in the following sequence: evolution of quasi-Landau levels to Fano resonances and quasi-bound states between the quasi-Landau levels, followed by the formation of crossings that evolve to anti-crossings inside the quasi-Landau level region. After that, Fano resonances are created between the quasi-Landau states with the final generation of resonant tunneling peaks. By comparing the G(E,B) maps, we identify the closed and open-like limits of the system as a function of the applied magnetic field. These results were used to build quantum openness diagrams G(w,B). Also, these maps allow us to determine the w-limit value from which we can qualitatively relate the closed system properties to the open one. The above analysis can be used to identify single spinless particle effects in experimental measurements of the open quantum dot limit.     

Fano effect and Andreev bound states in T-shape double quantum dots

In this Letter, we investigate the transport through a T-shaped double quantum dot coupled to two normal metal leads left and right and a superconducting lead. Analytical expressions of Andreev transmission and local density of states of the system at zero temperature have been obtained. We study the role of the superconducting lead in the quantum interferometric features of the double quantum dot. We report for first time the Fano effect produced by Andreev bound states in a side quantum dot. Our results show that as a consequence of quantum interference and proximity effect, the transmission from normal to normal lead exhibits Fano resonances due to Andreev bound states. We find that this interference effect allows us to study the Andreev bound states in the changes in the conductance between two normal leads.     

Analysis of the phase lapse problem in closed interferometers

We investigate the connection between the asymmetry of the Fano resonances in a mesoscopic interferometer with an embedded quantum dot and the π lapses in the phase of the “bare” dot transmittance. Consecutive Fano resonances with the same (opposite) sign of the Fano parameter imply the presence (absence) of a phase lapse with π between the corresponding resonances of the dot. Our results suggest that the famous “phase lapse” problem, first reported by Schuster et al. [R. Schuster, E. Buks, M. Heiblum, D. Mahalu, V. Umansky, H. Shtrikman, Nature 385 (1997) 417], can therefore be experimentally addressed in closed interferometers. It is also proposed that the Fano effect can be used to extract the phase distributions of the eigenfunctions for a mesoscopic 2D shape, via the parity of the resonances. In the presence of electron–electron interaction, one can calculate the phases of the T-matrix elements. The numerical results lead to the same conclusions as for the non-interacting case.     

量子点腔非谐振耦合系统纯退相干的特性及应用

采用非相干泵浦、受激辐射和纯退相干的量子主方程研究了量子点腔耦合系统,得出腔与量子点发射光谱解析解.理论分析显示,在非谐振耦合系统中纯退相干能使腔发射谱产生明显的移位效应,从而可以解释“非谐振耦合腔有效发射”效应.为了进一步研究纯退相干在量子点腔耦合系统上的应用,引入了系统有效耦合率和单光子源效率,并通过比较有效耦合率与腔耗散定义出好腔与坏腔机制.选取两组依据实验数据作为参量,在共振与失谐时研究了纯退相干对系统有效耦合率和单光子源效率的影响.结果表明:纯退相干可提高失谐系统有效耦合率与单光子源效率,从而可能使坏腔转变为好腔|两组参量中有较大耦合效率一组在一定范围内满足好腔机制,其单光子源效率明显优于另一组.在非谐振耦合系统比较了好腔机制与坏腔机制的激光,好腔机制是实现单量子点激光的必要条件|由于非谐振耦合系统Fano因子无最大值出现,从而该系统可能无激光阈值.     

ac field-induced Fano resonances in a parallel-coupled double quantum dot system

The effects of an ac electric field on the Fano resonance in a parallel-coupled double quantum dot system are investigated theoretically. The field can induce the photon-assisted Fano resonances for both symmetrical and asymmetrical parallel configurations. The magnitude and position of the photon-assisted Fano peak can be tuned by the ac field strength and frequency, respectively. Furthermore, the Fano resonance can appear with increasing the field frequency for both the symmetrical and asymmetrical configurations. This provides an efficient mechanism to control the Fano resonance. The photon-electron pumping effects for the symmetrical and asymmetrical cases are also studied in the weak- and strong-coupling regime.     

量子点腔系统中抽运诱导受激辐射与非谐振腔量子电动力学特性的研究

从量子点和腔相互作用的哈密顿量出发,利用包括非相干抽运,退相干项主方程,并结合量子回归定理,考虑相关初始条件,理论推导和数值计算相结合得出量子点多光子发射光谱精确数值结果.分析多光子发射光谱(费米子统计)和相应单光子情况(玻色子统计)时,得到依据费米子统计,退相干和热浴模型的多光子发射光谱同最近文献[22]量子点——微柱腔实验结果符合得非常好.结合理论和当前实验,显示了量子点腔系统中抽运诱导受激辐射和非谐振腔量子电动力学. 关键词： 量子点 微腔 受激辐射 发射光谱     

Conductance in an Aharonov-Bohm Interferometer with Parallel-Coupled Double Dots

We present a theoretical study of the conductance in an Aharonov-Bohm interferometer containing two coupled quantum dots. The interdot tunneling divides the interferometer into two coupled subrings, where opposite magnetic fluxes are threaded separately while the net flux is kept zero. Using the Green function technique we derive the expression of the linear conductance. It is found that the Aharonov-Bohm effect still exists, and when the level of each dot is aligned, the exchange of the Fano and Breit-Wigner resonances in the conductance can be achieved by tuning the magnetic flux. When the two levels are mismatched the exchange may not happen. Further, for some specific asymmetric systems where the coupling strengths between the two dots and the leads are not equal, the flux can change the Fano resonance into an antiresonance, which is absent in symmetric systems.     

Spin-flip effects in a parallel-coupled double quantum dot molecule

We investigate theoretically the electronic transport through a parallel-coupled double quantum dot (DQD) molecule attached to metallic electrodes, in which the spin-flip scattering on each quantum dot is considered. Special attention is paid to the effects of the intradot spin-flip processes on the linear conductance by using the equation of motion approach for Green’s functions. When a weak spin-flip scattering on each quantum dot is present, the single Fano peak splits into two Fano peaks, and the Breit–Wigner resonance may be suppressed slightly. When the spin-flip scattering strength on each quantum dot becomes strong, the linear conductance spectrum consists of two Breit–Wigner peaks and two Fano peaks due to the quantum interference effects. The positions and shapes of these resonant peaks can be controlled by using the magnetic flux through the quantum device.     

测量对量子点装置中Fano效应的影响

考虑一个将点接触接入到单量子点体系中的装置,利用此装置可以监测到点接触的测量对量子点体系的影响。我们利用非平衡格林函数方法对体系进行了数值计算,发现无论量子点与两边导线的耦合系数是否对称,点接触与量子点之间的库仑相互作用都可以改变体系的透射曲线,甚至还可以控制Fano线性的产生和消失。     

Optically mediated spin current and Fano resonance in an Aharonov-Bohm ring with a quantum dot

We study the spin-polarized transport and Fano resonance in an Aharonov-Bohm (AB) interferometer with an embedded quantum dot, where the dot is irradiated by continuous circularly polarized light. Compared with the conventional Fano form, the resonance line shape is found to be deformed by the interplay between the external irradiation and the Coulomb repulsion. The Fano resonance peaks are split due to the shift of the effective energy level in the dot by Rabi oscillation of electron-heavy hole pairs. The direction and magnitude of spin current polarization can be modulated by the device parameters. Furthermore, the direct tunneling between two leads can induce a sharp sign reversal of spin polarization, the system thus operates as a rectifier for spin current polarization.     

Transport properties of a double quantum dot molecule in the presence of impurity effects

In this Letter, we studied the electronic transport through a parallel-coupled double quantum dot (DQD) molecule including impurity effects at zero temperature. The linear conductance can be calculated by using the Green's function method. An obvious Fano resonance arising from the impurity state in the quantum dot is observed for the symmetric dot-lead coupling structure in the absence of the magnetic flux through the quantum device. When the magnetic flux is presented, two groups of conductance peaks appear in the linear conductance spectra. Each group is decomposed into one Breit-Wigner and one Fano resonances. Tuning the system parameters, we can control effectively the shapes of these conductance peaks. The Aharonov-Bohm (AB) oscillation for the magnetic flux is also studied. The oscillation period of the linear conductance with π, 2π or 4π may be observed by tuning the interdot tunneling coupling or the dot-impurity coupling strengths.     

Observation of the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot

We have observed the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot. In a weak coupling regime, dips due to the Fano effect appeared. As the coupling strength increased, conductance in the regions between the dips decreased alternately. From the temperature dependence and the response to the magnetic field, we conclude that the conductance reduction is due to the Fano-Kondo antiresonance. At a Kondo valley with the Fano parameter q approximately 0, the phase shift is locked to pi/2 against the gate voltage when the system is close to the unitary limit in agreement with theoretical predictions by Gerland et al. [Phys. Rev. Lett. 84, 3710 (2000)].     

Fano versus Kondo resonances in a multilevel "semiopen" quantum dot

Linear conductance across a large quantum dot via a single level epsilon(0) with large hybridization to the contacts is strongly sensitive to quasibound states localized in the dot and weakly coupled to epsilon(0). The conductance oscillates with the gate voltage due to interference of the Fano type. At low temperature and Coulomb blockade, Kondo correlations damp the oscillations on an extended range of gate voltage values, by freezing the occupancy of the epsilon(0) level itself. As a consequence, the antiresonances of Fano origin are washed out. The results are in good correspondence with experimental data for a large quantum dot in the semiopen regime.     

Quantum transport across multilevel quantum dot

The conductance across a quantum dot can be influenced by levels localized in the dot and having little hybridization with the conduction channel. Fano lineshapes arising in resonant transmission measurements, imply interference between the localized and extended states. By applying a magnetic orthogonal field, the total spin of a quantum dot can be tuned. Electron correlations drive the dot through level crossings to higher spin states. Such crossings can give rise to Kondo conductance when the dot is at Coulomb blockade close to a magnetic field induced level degeneracy. In a previous work [P. Stefański, A. Tagliacozzo, B.R. Bulka, Phys. Rev. Lett. 93 (2004) 186805] we have shown that a Fano-like pattern also appears when the continuum of the conduction states originates from a broad Kondo resonance. A bunch of localized core levels, weakly coupled to the Kondo resonance, imprints the broad Kondo peak with Fano lineshapes. A signature of the presence of correlations in the quantum dot is discussed.     

Mesoscopic to universal crossover of the transmission phase of multilevel quantum dots

Transmission phase alpha measurements of many-electron quantum dots (small mean level spacing delta) revealed universal phase lapses by pi between consecutive resonances. In contrast, for dots with only a few electrons (large delta), the appearance or not of a phase lapse depends on the dot parameters. We show that a model of a multilevel quantum dot with local Coulomb interactions and arbitrary level-lead couplings reproduces the generic features of the observed behavior. The universal behavior of alpha for small delta follows from Fano-type antiresonances of the renormalized single-particle levels.     

Magnetic-Flux-Controlled Giant Fano Factor for Coherent Tunneling Through a Parallel Double-Quantum-Dot

We report our studies of zero-frequency shot noise in tunneling through a parallel-coupled quantum dot interferometer by employing number-resolved quantum rate equations. We show that the combination of quantum interference effect between two pathways and strong Coulomb repulsion could result in a giant Fano factor, which is controllable by tuning the enclosed magnetic flux.     

Dephasing processes in a single semiconductor quantum dot

We discuss the decoherence dynamics in a single semiconductor quantum dot and analyze two dephasing mechanisms. In the first part of the review, we examine the intrinsic source of dephasing provided by the coupling to acoustic phonons. We show that the non-perturbative reaction of the lattice to the interband optical transition results in a composite optical spectrum with a central zero-phonon line and lateral side-bands. In fact, these acoustic phonon side-bands completely dominate the quantum dot optical response at room temperature. In the second part of the article, we focus on the extrinsic dephasing mechanism of spectral diffusion that determines the quantum dot decoherence at low temperatures. We interpret the variations of both width and shape of the zero-phonon line as due to the fluctuating electrostatic environment. In particular, we demonstrate the existence of a motional narrowing regime in the limit of low incident power or low temperature, thus revealing an unconventional phenomenology compared to nuclear magnetic resonance. To cite this article: G. Cassabois, R. Ferreira, C. R. Physique 9 (2008).     

Geometric phase of an open double-quantum-dot system detected by a quantum point contact

We study theoretically the geometric phase of a double-quantum-dot(DQD) system measured by a quantum point contact(QPC) in the pure dephasing and dissipative environments, respectively. The results show that in these two environments, the coupling strength between the quantum dots has an enhanced impact on the geometric phase during a quasiperiod. This is due to the fact that the expansion of the width of the tunneling channel connecting the two quantum dots accelerates the oscillations of the electron between the quantum dots and makes the length of the evolution path longer.In addition, there is a notable near-zero region in the geometric phase because the stronger coupling between the system and the QPC freezes the electron in one quantum dot and the solid angle enclosed by the evolution path is approximately zero,which is associated with the quantum Zeno effect. For the pure dephasing environment, the geometric phase is suppressed as the dephasing rate increases which is caused only by the phase damping of the system. In the dissipative environment,the geometric phase is reduced with the increase of the relaxation rate which results from both the energy dissipation and phase damping of the system. Our results are helpful for using the geometric phase to construct the fault-tolerant quantum devices based on quantum dot systems in quantum information.