Electrical properties of the AgTlSe2 semiconductor in the liquid state

The electrical conductivity and thermoelectric power of AgTlSe₂ have been investigated as a function of temperature from 390° C up to 590° C. The experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors [12]. Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in localized states near the band edge.     

Electrical properties and thermal conductivity of AgTlTe2 in the solid and liquid phases

Measurements of the electrical conductivity, thermelectric power and thermal conductivity of an AgTlTe₂ semiconductor in the solid and liquid states were carried out in a wide range of temperatures. In the liquid state the data analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors. Positive thermoelectric power suggests a large predominance of holes in electrical transport.     

Threshold switching effects in AgTlSe2 and CuTlSe2 films

Switching effects in AgTlSe₂ and CuTlSe₂ chalcopyrite semiconductors films have been investigated. The threshold switching voltage was found to increase linearly with the thickness, moreoverV _th increases exponentially with the temperature. The rapid transition between the highly resistive and conductive states was attributed to an electrothermal origin from Joule's heating of a current channel.     

Electrical conductivity and thermoelectric power of AgInSe2 in the solid and liquid states

The electrical conductivity and thermoelectric power of AgInSe₂ have been investigated as a function of temperature from 420°C to 950°C. Experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors [1]. The activation energy calculated from electrical conductivity data is found to be 0.06 eV for the solid and 0.37 eV for the liquid phase. Moreover, the coefficient of the linear decrease of the energy gap with temperature was found to be 1.96×10^–4 eV/K.     

Electrical conductivity and thermoelectric power of liquid selenium doped with thallium and indium

The temperature dependence of the electrical conductivity and thermoelectric power of liquid selenium with thallium and indium additives have been studied. Large variations appear in the electrical conductivity and thermoelectric power, where Tl and In additives favourp-type conduction.     

Electrical properties of p +/n + In0.53Ga0.47As tunnel diodes grown by liquid phase epitaxy

p ⁺/n ⁺ In_0.53Ga_0.47As tunnel diodes were prepared by liquid phase epitaxy and their electrical properties were characterized. These devices exhibit large forward conductances (2.59×10^{3 –1} cm^–2), high peak current densities (793 A/cm²) and large peak to valley current ratios (16.2). These devices offer great promise as intercell ohmic contacts (IOCs) for InP-based, onolithic multijunction solar cells.     

Electrical properties of p +/n + InGaAsP tunnel diodes with a bandgap of 0.95 eV grown by liquid phase epitaxy

p ⁺/n ⁺ InGaAsP tunnel diodes with a bandgap of 0.95 eV were fabricated by liquid phase epitaxy and their electrical properties were characterized. Forward conductances of 500 ^–1 cm^–2, peak current densities of 28.5 A/cm² and peak to valley current ratios of 14.3 were obtained at room temperature. These devices were incorporated successfully as Intercell Ohmic Connections (IOCs) for an InP-based, two-terminal monolithic multijunction tandem solar cell.     

Dielectric relaxation and AC conduction of an AgTlSe2 semiconductor in the solid and liquid states

Measurements of the dielectric properties of AgTlSe₂ in the solid and liquid states were carried out in a wide range of frequencies and temperatures. The material displayed dielectric dispersion, and a loss peak was observed. Cole-Cole diagrams have been used to determine the distribution parameter (a) and the molecular relaxation time (). The process of dielectric relaxation (loss) and ac conduction was attributed to the correlated barrier hopping model suggested by Elliott for amorphous solids, where two carriers simultaneously hop over a barrier between charged defectD ⁺ andD ^– states.     

Electrical properties of Au–polystyrene–Au submicron structures

Received: 25 January 1998/Accepted: 28 May 1998     

Mobility and lifetime of negative charges in liquid H2

Recent experiments on the mobility ofe ^– in liquid H₂ have shown features that differ drastically from those of liquid He, although the adopted theories for such mobilities are quite similar. The differences are attributed to the existence of a second type of charge carriers (different from bubbles), namely H^–(H₂) _x -clusters. The effective radius and the decay channels of these carriers are investigated theoretically.P.N. Lebedev Physical Institute of the Academy of Sciences of Russian, Leninsky prospect 53, Moscow 117924, Russia     

Effect of annealing on the electrical properties and refractive index of HgI2 single crystals

The effect of annealing on the electrical properties and the refractive index of red mercuric iodide (HgI₂) single crystals is investigated. The ac-impedance and phase angle were measured in the frequency range from 100 Hz to 10 kHz at different annealing temperatures. The ac-conductivity, dielectric constants, loss tangent and the refractive index as a function of frequency are determined. The results are discussed in terms of structural changes taking place as a result of the heat treatment of the HgI₂ single crystals.     

Electrical properties and stability of Tb-doped zinc oxide-based nonlinear resistors

The microstructure, electric field-current density (E-J), capacitance-voltage (C-V), and stability characteristics of Zn-Pr-Co-Cr-Tb oxide-based nonlinear resistors were investigated for different Tb₄O₇ amounts. It increased in the range of 8.9-42.0 in the nonlinear coefficient and in the range of 1026-6514 V/cm in the breakdown field with increasing Tb₄O₇ amount. As Tb₄O₇ amount increased, the donor density decreased in the range of 1.23×10¹⁸-0.70×10¹⁸/cm³, whereas the barrier height at grain boundaries increased in the range of 0.73-0.93 eV. A good stability was obtained in the range of 0.25-0.5 mol% in Tb₄O₇ amount.     

Effect of in addition on some physical properties of the As2Se3 amorphous system

The effect of In content on do electrical conductivity and DTA of the system (As₂Se₃)_1-x. In_x, x=0, 0.01, 0.05, has been studied. The electrical energy gap was found to increase for an In content 0.01% and decrease for an In content 0.05%. The samples exhibit the three conduction mechanisms proposed by Mott and Davis. The activation energy was calculated for each mechanism. The effect of heating rate on the transition temperatures (T _g,T _c,T _m) was studied and the variation of the crystallization-peak position was used to calculate the activation energy and the order of the crystallization process.     

Electrical conduction in a semicrystalline polyethylene terephthalate in high electric field

Measurements of conduction currents were carried out on polyethylene terephthalate semi crystalline PET in an electrical field region varying from 40 to 260 V/μm. Various mechanisms of conduction (Richardson-Schottky, Fowler-Nordheim, Poole-Frenkel, space charge limited current SCLC, Hopping), can cause non-linear characteristics. To highlight the mechanism responsible for conduction in the PET, we used the slope of the experimental curve Log(J)=f(E) in the region 150<E<260 V/μm, to calculate the value of the dielectric permittivity. The characteristic curve Log(J)=f(1/T) shows that the Poole-Frenkel mechanism of conduction is prevalent in the semi crystalline PET. The characteristic J=f(E) for various thicknesses shows that the field threshold increases with the thickness.     

Electrical and infrared dielectrical properties of silica aerogels and of silica-aerogel-based composites

In this contribution we have studied the key electrical parameters of silica aerogels and of silica-aerogel-based composites, namely the dielectric constants , the dielectric losses tan (at 1 kHz), and the breakdown fields E _b (at 50 Hz). For low-density bulk silica aerogels we find =1.25 and tan =0.0005. E _b is about 500 kV/cm in quasi-homogeneous fields, and of the order of MV/cm in strongly inhomogeneous fields. The dielectric constants of partially densified aerogels increase linearly with density; their dielectric losses are relatively large and their breakdown fields are comparativiely low. The same results are found for aerogels in the form of settled materials, i.e. aerogel granules and powders in air. Acrylate-based aerogel composites with volume fractions larger than 70% have low dielectric constants but their losses are at least 10 times higher than those of low-density aerogels. These materials sustain high local fields in the MV/cm region, while in quasihomogeneous fields, breakdown occurs at about 100 kV/cm. Based on the present results and the interplay with other physical properties (low mechanical resistance, low thermal conductivity, adsorption of water, etc.), silica aerogels and silica aerogel-acrylate-based composites are predicted to have a low potential for electrical insulation.     

Microwave dielectric properties of Ti4+/MgO and Ni2+/MgO

The dielectric properties of titanium-doped magnesium oxide (Ti/MgO) and nickel-doped magnesium oxide (Ni/MgO) single crystals have been measured in the range of temperature from 300 to 450 K at the microwave frequency of 9.31 GHz. For both crystals the dielectric properties are found similar. From the conductivity data, the activation energy in the measured temperature region has been estimated to be 0.15 eV. The values of the temperature dependence (–1)^–1(+2)^–1 (/T) _p have been calculated. The data confirms the Bosmann and Havinga postulate that, for materials in which the dielectric constant; is less than 20 the temperature dependence should be positive.     

Frequency dependent conductivity in As2Se3 and As2Se3 + 15% Sb

Dc and ac measurements were performed on bulk samples of undoped and 15% Sb doped As₂Se₃ as a function of temperature (90–400 K) and frequency (10³–10⁶ Hz). The dc results show an activated conductivity dependence on temperature with an activation energy of 0.8 eV above room temperature. The ac results give a temperature dependent frequency exponent s. The temperature dependence of G _ac is discussed in terms of the mechanisms involved. Results are compared with the predictions of the Quantum Mechanical Tunnelling and Correlated Barrier Hopping models. It is found that doping increases the dc conductivity but has no effect on the ac conductivity.     

Electrical and thermoelectrical properties of selenium-tellurium liquid alloys

A study has been made of the electrical conductivity and thermoelectric power of liquid alloys Te_1-x Se _x with 0≤-x≤-0.5. The temperature range extends from undercooling to about 900°C for electrical conductivity and 750°C for thermoelectric power. A partial conservation after melting of covalent bonds between the atoms of the chains leads to a liquid model in which Gubanov's theory predicts an energy band gap. The experimental results in the intrinsic semiconductor range give the band gap and the mobility ratio values. The thermal gap changes from 1.2 to 3 ev between pure tellurium and the alloy with 70 at. % selenium. There is a large increase in hole mobility with atomic % selenium. For x≥0.2 the low temperature results of the electrical conductivity can be explained by the existence of localized states in the band gap. The high temperature measurements show a trend to the metallic state, but this state cannot be reached at one atmosphere pressure even for tellurium.     

Surface and bulk electrical properties of the hematite phase Fe2O3

Electrical properties of Fe₂O₃ were studied by using several electrical methods such as electrical conductivity, thermopower (Seebeck effect) and work function. The studies were performed at elevated temperatures (1053–1153 K) and under controlled oxygen activity (10²10⁵ Pa). Samples of different thickness varying between 10³ nm and 1 mm were taken for the measurements of both electrical conductivity and thermopower. It has been found that the exponent of the po₂ dependence resulting from the work function measurements (1/n ) is about 1/2. Both thermopower and electrical conductivity data are well consistent with work function data for the thin film (1000 nm) of Fe₂O₃. The charge transport in Fe₂O₃ has been interpreted in terms of small polaron mechanism. Analysis of measured electrical parameters, regarding the thickness of studied specimens, indicates that the near-surface layer of Fe₂O₃ exhibits much higher deviation from stoichiometry than the bulk phase and resulting strong interaction between charge carriers. This effect has been interpreted in terms of segregation of intrinsic lattice defects to the surface, and presumably also to grain boundaries, of Fe₂O₃.     

Some properties of the informational model of the liquid state

Equilibrium properties of one-component liquids are obtainable—as suggested by Collins-from the coding procedure in terms of distances between neighboring molecules. The monatomic case is dealt with first, and consequences of some simplifying assumptions are explored. The connection between the probability(R) of an intermolecular distanceR and the usual pair distribution function is considered. The treatment is then generalized to the case of heterogeneous multiatomic molecules.