Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique,and optical emissions from the near-infrared to the visible are obtained.The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content,and the photoluminescence(PL) peak shifts from 1.51 eV to 2.16 eV.The band tail state PL mechanism is confirmed by analysing the optical band gap,PL intensity,the Stocks shift of the PL,and the Urbach energy of the film.The PL decay times of the samples are in the nanosecond scale,and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.     

用巯基乙酸作稳定剂制备CdSe纳米晶的光学性质

以巯基乙酸为稳定剂制备了CdSe纳米晶，通过尺寸选择沉淀得到2nm到3nm之间不同尺寸的纳米晶，利用室温光吸收，光致发光（PL）和光致发光激发（PLE）谱来研究了CdSe纳米团簇的光学性质。紫外－可见吸收谱给了具有清晰激光特征的尖锐吸收边，这表明样品的尺寸分布很窄。光致发光研究表明，样品有两个发射带，一个具有较高能量位于吸收边，来自电子－空穴对从最低激发态能级弛豫后的辐射复合，另一个低能发射带归属于基质与纳米晶界面存在的俘获中心。PLE谱中有2个吸收带，分别是S－S和P－P跃迁。最后还给出了不同激发能量下的发光特性。     

Room temperature visible light emission from Si/SiO2 multilayers: Roles of interface electronic states and silicon phase

We have studied luminescence properties and microstructure of 20 patterns Si/SiO₂ multilayers. The photoluminescence spectra consist of two gaussian bands in the visible-infrared spectral region. It has been demonstrated that the strong PL band is caused by the radiative recombination in the Si/SiO₂ interfaces states, whereas the weaker band originates from radiative recombination in the nanosized Si layers. The peak shift of this latter band shows a discontinuity that corresponds to a crystalline-to-amorphous phase change when the Si layers are thinner than 30 Å. The peak energy as a function of the layer thickness is interpreted using a quantum confinement model in the case of amorphous Si layers.     

Size-dependent radiative emission of PbS quantum dots embedded in Nafion membrane

PbS quantum dots (QDs) have been incorporated in a Nafion membrane, where the QD sizes were adjusted by changing the reaction time due to the steady growing process. The radiative emissions of the samples were investigated by optical absorption, photoluminescence (PL), and time-resolved PL spectroscopy. Size-tunable emissions are shown by the PL spectrum in a range of 1.84–1.65 eV, and the emission mechanism was investigated based on a four-band envelope-function model. Possible energy transitions for the radiative emission are listed. The PL lifetime depending on the particle size is about one microsecond, and PL decay curves exhibit a trend of decreasing decay time with an increase of the PbS QD size.     

Pressure Effects on Spectra of Tunable Laser Crystal GSGG:Cr3+ I: Theory

A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both thetemperature-independent contributions and the temperature-dependent ones of acoustic branches and optical brancheshave been derived. It is found that the temperature-independent contributions are very important, especially at lowtemperature. The total pressure-induced shift (PS) of a level (or spectral line or band) is the algebraic sum of its PSwithout EPI and its PS due to EPI. By means of both the theory for shifts of energy spectra due to EPI and the theoryfor PS of energy spectra, the total PS of R1 line of tunable laser crystal GSGG:Cr3+ at 70 K as well as the ones of itsR1 line, R2 line and U band at 300 K will be successfully calculated and explained in this series of papers.     

Effect of contact with air on the photoluminescence spectrum of porous silicon

A study has been made of the transformation of photoluminescence (PL) spectra of porous silicon (PS) induced by its ageing, including the early stages of contact with air. The sample was prepared under conditions that minimized this contact, and spectral measurements were carried out in a high vacuum or in liquid nitrogen. The PS PL spectra obtained under continuous measurement in high vacuum are always dominated by one emission band of PS nanoelements, which shifts toward shorter wavelengths with ageing by 150 nm. At 80 K, the band intensity is considerably higher than at 300 K, and this difference grows with ageing. Exposure of a sample to air for a few tens of seconds is long enough to strongly transform its time-resolved PL spectra, which is evidence of a change in the sample surface. The effect of immersion of PS samples in liquid nitrogen on PL spectra is associated not only with their cooling, but also with the field of adsorbed nitrogen molecules, whose influence becomes weaker with increasing thickness of the oxidized near-surface layer. The variation of the spectral properties and kinetics of the long-wavelength PS PL band with temperature, medium (liquid nitrogen or vacuum), and exposure time suggest that these factors affect carrier migration between silicon nanoelements.     

InN分凝的InGaN薄膜的光致发光与吸收谱

我们用低压MOCVD在蓝宝石衬底生长了InGaN/GaN外延层.用X射线衍射(XRD),光致发光谱(PL),光吸收谱等测量手段,研究了InGaN的辐射发光机制.In组分利用Vegard定理和XRD测量得到.我们发现随着In组分的增加,在光吸收谱上发现吸收边的红移和较宽的Urbach带尾;PL谱中低能端的发射渐渐成为主导,并且在PL激发谱中InGaN峰也变宽.我们认为压电效应改变了InGaN的能带结构,从而影响了光学吸收特性.而在InN量子点中的辐射复合则是InGaN层发光的起源.     

不同形态MEH-PPV的构象及其光学特性

通过对在固溶体、稀溶液、薄膜和纳米孔中MEH—PPV的PL和PLE谱的测量分析,研究不同形态下MEH-PPV分子链的构象及其对电子能带和光学性质的影响。在THF稀溶液中,MEH—PPV分子链基本上皆为分立态;在MEH—PPV薄膜中,分子链基本上皆为聚集态;在MEH-PPV／PS固溶体中,MEH—PPV分子链为聚集态和分立态两构象并存,聚集态的比例随MEH-PPV浓度的增加而升高;在多孔氧化铝模板纳米孔中,MEH—PPV分子链形成链束。分立态、聚集态和链束这三种不同构象的分子链具有不同的电子能带结构和光学性质。     

Infrared optical response of YBa2Cu3O7 and PrBa2Cu3O7 An ellipsometric study

Ellipsometry was used to study (110) and (001) oriented films of YBa₂Cu₃O₇ and PrBa₂Cu₃O₇ in the mid-and near-infrared spectral regions. Below a photon energy of 0.1 eV, the in-plane component of the dielectric tensor of YBa₂Cu₃O₇ is dominated by a Drude term with a squared plasma energy of (3.0 ± 0.3) eV². This “oscillator strength”, and the Lorentzian broadening energy of (0.104 ± 0.005) eV at room temperature, are confirmed by the changes induced in Pr-substituted material, and by low-temperature measurements in the near-infrared. The deviation from the Drude behavior observed above 0.1 eV is accounted for by a broad absorption band with an oscillator strength of (3.6 ± 0.1) eV² in YBa₂Cu₃O₇ which shifts to higher energies and takes over almost all of the oscillator strength of the Drude term when Y is substituted by Pr. The response to electric fields perpendicular to the planes is much weaker, with an upper bound of 0.63 eV² for the squared plasma energy. The in-plane loss function computed from the measured dielectric function follows the Drude-like lineshape, modified by the bound-state absorption band, down to the lowest energy reached in our measurements (0.058 eV).     

The mechanism of emission in the red photoluminescence band of porous silicon

Porous silicon (PS) exhibits several photoluminescence (PL) bands, whose spectral position and intensity depend strongly on the actual conditions of preparation of PS, its treatment, and subsequent use. The PS PL band peaking at about 1.8 eV and usually assigned to the intrinsic emission of silicon nanocrystals was studied. It was shown that the temperature-induced variation of the PL kinetics in the 80 to 300-K interval follows a complex pattern and depends noticeably on the actual point on the band profile. The temperature behavior of PL decay in the 1.8-eV band is determined by the electron-hole recombination rate within a nanocrystal and the cascade carrier transitions from small to large nanocrystals, with an attendant decrease in energy.     

晴朗无云天空光谱辐射的近似计算模型

 利用大气光学质量和大气气溶胶光学厚度的经验公式,由HITRAN数据库获得大气分子谱线参数,基于辐射传输方程,给出了晴朗无云天空光谱辐射的近似计算模型。根据该近似计算模型对晴朗无云天空光谱辐射亮度进行的计算结果表明：天空光谱辐射亮度曲线上存在明显的O₂和H₂O吸收线;晴朗无云天空辐射的光谱分布偏蓝,天空亮度主要集中在短波段部分;太阳角小的天空光谱亮度出现“红移”现象;由于大气厚度变大,近地平的天空辐射亮度较大。     

Nanostructuring-induced modification of optical properties of p-GaAs (1 0 0)

A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (1 0 0) surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is characterized by atomic force microscopy (AFM), room temperature photoluminescence (PL), Raman spectroscopy and optical reflectance measurements. AFM imaging reveals that the porous GaAs layer is consisted of a pillar-like of few nm in width distributed between more-reduced size nanostructures. In addition to the “infrared” PL band of un-etched GaAs, a strong “green” PL band is observed in the etched sample. The broad visible PL band of a high-energy (3.82 eV) excitation is found to compose of two PL band attributed to excitons confinement in two different sizes distribution of GaAs nanocrystals. The quantum confinement effects in GaAs nanocrystallites is also evidenced from Raman spectroscopy through the pronounced appearance of the transverse optical (TO) phonon line in the spectra of the porous sample. Porosity-induced a significant reduction of the specular reflection, in the spectral range (400–800 nm), is also demonstrated.     

First-principles study of the optical properties of defect electronic structure and chalcopyrite CdGa2Te4

<正>The electronic and optical properties of the defect chalcopyrite CdGa₂Te₄ compound are studied based on the first-principles calculations.The band structure and density of states are calculated to discuss the electronic properties and orbital hybridized properties of the compound.The optical properties,including complex dielectric function,absorption coefficient,refractive index,reflectivity,and loss function,and the origin of spectral peaks are analysed based on the electronic structures.The presented results exhibit isotropic behaviours in a low and a high energy range and an anisotropic behaviour in an intermediate energy range.     

纳米硅结构薄膜光致发光的温度依赖特性

综合考虑纳米硅结构薄膜的特殊性质,如量子限制效应、光学带隙和光跃迁振子强度对纳米硅粒径的依赖特性以及光学带隙和光辐射的温度依赖特性等,给出了一个解析表达式来分析具有一定粒径分布的纳米硅结构薄膜的光致发光(PL)强度分布,其中选取了两种纳米硅的粒径分布,即高斯分布和对数正态分布。结果表明,随着平均粒径和粒径分布偏差的减小,纳米硅薄膜的PL谱峰蓝移。随着环境温度的升高,纳米硅结构薄膜的PL谱峰红移且相对发光强度减弱。纳米硅结构薄膜光辐射拟合的结果与实验数据的比较分析表明,该模型能够很好地解释纳米硅结构薄膜在不同温度下的PL特性。     

Two-photon absorption and broadband optical limiting with bis-donor stilbenes

Large two-photon absorptivities are reported for symmetrical bis-donor stilbene derivatives with dialkylamino or diphenylamino groups. These molecules exhibit strong optical limiting of nanosecond pulses over a broad spectral range in the visible. Relative to bis(di-n-butylamino)stilbene, bis(diphenylamino)stilbene exhibits a 90-nm red shift of its optical limiting band but only a minimal shift of ~13 nm of its lowest one-photon electronic absorption band. Mixtures of these compounds offer an unprecedented combination of broad optical limiting bandwidth and high linear transparency.     

Photoluminescence properties of europium-doped porous silicon nanocomposites

We present new results concerning the photoluminescence properties of europium (Eu³⁺) incorporated in porous silicon (PS) matrix. Eu³⁺ ions were embedded in the matrix by simple impregnation of PS layers in chloride solution of europium. Complete and uniform penetration of Eu³⁺ into the pores is proved from RBS study.The PL spectrum shows the existence of several peaks superposed to the PL band of PS. These peaks are related to level transitions in Eu³⁺. The effect of the ray excitation on the PL shows that energy transfer is not the principal route for radiative recombination.A systematic study of the PL versus annealing temperature was performed. It was found that the optimised PL spectrum is found after annealing at 1000°C. Low-temperature study of the PL shows an important increase of the intensity and a broadness of the peaks due to the appearance of a second crystallographic site.     

Investigation on simultaneous doping of Sn and F with ZnO nanopowders synthesized using a simple soft chemical route

ZnO nanopowders simultaneously doped with Sn and F are synthesized by employing a simple soft chemical route. The effect of simultaneous doping on the structural, optical and surface morphological properties are investigated in detail and reported. The structural, FTIR and Raman studies revealed the proper Sn and F incorporation into the ZnO matrix. The synthesized nanoparticles exhibit the Raman bands at 335, 386, 423, 440 and 553 cm⁻¹ which were assigned to wurtzite-type ZnO. The blue shift in the absorption spectrum, caused by the doping process suggests an increase in the optical band gap. The PL studies showed the occurrence of energy transition from ZnO to dopant sites. The surface morphological studies confirmed the nanosize of the obtained powder particles. The EDAX profiles confirmed the presence of expected elements in the final product. The characteristics of the synthesized nanopowders showed that they are potentially significant for several technological applications.     

Investigation of the optical absorption characteristics of slow-cooled LiF:Mg,Ti (TLD-100)

The optical absorption (OA) spectrum of LiF:Mg,Ti has been studied as a function of dose at two different cooling rates following the 400 °C pre-irradiation anneal in order to further investigate the role of cooling rate in the thermoluminescence (TL) mechanisms of this material. “Slow-cooling” following the pre-irradiation 400 °C anneal substantially decreases the OA bands at 3.25 eV and 4.0 eV, in agreement with the overall loss in TL peaks 2–5 intensity using slow-cooling routines. Slow-cooling appears to shift the maximum intensity of peak 5 to lower temperatures (a behaviour which has been attributed to an enhanced intensity of peak 5a), however, no difference in the shape of the 4.0 eV OA band is detected following “slow-cooling”. Apparently the OA band related to peak 5a is too close in energy to the peak 5 OA band to be observed due to lack of sufficient resolution and spectral deconvolution process or it is not present at room temperature (RT) and formed during heating of the sample. The intensity of the 4.0 eV OA band does not change if the sample (prior to irradiation to a standard dose of 200 Gy) is irradiated to 4 kGy followed by a 500 °C/1 h post-irradiation anneal. This result demonstrates that the loss of intensity at high levels of dose (so-called radiation damage) of TL glow peak 5 results from alteration of the LCs or to the creation of additional competitive centers and is not correlated with the dose behaviour of the TCs.     

无序GaInP光致发光谱的温度依赖关系

研究了无序ＧａＩｎＰ样品的温度依赖关系，大低温ＰＬ谱中，谱线呈单峰结构。随着温度从１５Ｋ升高到２５０Ｋ，说地宽从１６ｍｅＶ增大到３１ｍｅＶ，并且发生红移，同时强度减小两个数数量级。     

生长温度对6H-SiC上SiCGe薄膜发光特性的影响

利用低压化学气相淀积工艺在6H-SiC衬底成功制备了SiCGe薄膜。通过光致发光(PL)谱研究了生长温度对SiCGe薄膜发光特性的影响。结果表明:生长温度为980,1030,1060℃的SiCGe薄膜的室温光致发光峰分别位于2.13,2.18,2.31eV处;通过组分分析和带隙计算,认定该发光峰来自于带间辐射复合,证实了改变生长温度对SiCGe薄膜带隙的调节作用。同时,对SiCGe薄膜进行了变温PL测试,发现当测试温度高于200K时,发光峰呈现出蓝移现象。认为这是不同机制参与发光所造成的。