Increase in the diamagnetic response from low-density Bi1.8Pb0.3Sr1.9Ca2Cu3Ox high-temperature superconductors and Bi1.8Pb0.3Sr1.9Ca2Cu3Ox + Ag composites

Low-density polycrystalline Bi_1.8Pb_0.3Sr_1.9Ca₂Cu₃O _x high-temperature superconductors with a foamlike microstructure and composites consisting of this superconductor and silver in an amount of 20, 25, and 30 vol % are synthesized. The microstructure, as well as the temperature and field dependences of the magnetization, M(T) and M(H), are studied. It is found that, in Bi_1.8Pb_0.3Sr_1.9Ca₂Cu₃O _x high-temperature superconductors and Bi_1.8Pb_0.3Sr_1.9Ca₂Cu₃O _x + Ag composites, the diamagnetic response is enhanced and the screening properties are improved compared with high-temperature polycrystalline superconductors with the same composition that are prepared by the standard technology. The observed effect is explained by the features of magnetic flux penetration into a porous medium.     

Magnetic field dependence of vortex activation energy: A comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors

The dissipative mechanism at low current density is compared in three different classes of superconductors. This is achieved by measuring the resistance as a function of temperature and magnetic field in clean polycrystalline samples of NbSe₂, MgB₂ and Bi₂Sr₂Ca₂Cu₃O₁₀ (BSCCO) superconductors. Thermally activated flux flow behaviour is seen in all the three systems and clearly identified in bulk MgB₂. While the activation energy at low fields for MgB₂ is comparable to Bi₂Sr₂Ca₂Cu₃O₁₀, its field dependence follows a parabolic behaviour unlike a power-law dependence seen in Bi₂Sr₂Ca₂Cu₃O₁₀. We analyse our results based on Kramer’s scaling for grain boundary pinning in MgB₂ and NbSe₂.      

Magnetic and transport properties of Mn-doped Bi2Se3 and Sb2Se3

We report on the single crystal growth and thermoelectric and magnetic properties of Mn-doped Bi₂Se₃ and Sb₂Se₃ single crystals prepared by the temperature gradient solidification method. The composition and crystal structure were determined using electron probe microanalysis and θ–2θ powder X-ray diffraction studies, respectively. The lattice constants of several percent Mn-doped Bi₂Se₃ and Sb₂Se₃ were slightly smaller than those of the undoped sample due to the smaller Mn atomic radius (1.40 Å) than those of Bi (1.60 Å) and Sb (1.45 Å). Mn-doped Bi₂Se₃ and Sb₂Se₃ showed spin-glass and paramagnetic properties, respectively.     

Structure and electrical properties of Bi5GexSe95−x thin films

Bi₅Ge_xSe_95−x (30, 35, 40 and 45 at.%) thin films of thickness 200 nm were prepared on glass substrates by the thermal evaporation technique. The influence of composition and annealing temperature, on the structural and electrical properties of Bi₅Ge_xSe_95−x films was investigated systematically using X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX). The XRD patterns showed that the as-prepared films were amorphous in nature with few tiny crystalline peaks of relatively low intensity for 30 and 45 at.% and the Bi₅Ge₄₀Se₅₅ annealed film was polycrystalline. The chemical composition of the Bi₅Ge₃₀Se₆₅ film has been checked using energy dispersive X-ray spectroscopy (EDX). The electrical conductivity was measured in the temperature range 300-430 K for the studied compositions. The effect of composition on the activation energy (ΔE) and the density of localized states at the Fermi level N(E_F) were studied, moreover the electrical conductivity was found to increase with increasing the annealing temperature and the activation energy was found to decrease with increasing the annealing temperature. The results were discussed on the basis of amorphous-crystalline transformations.     

Fabrication and phase variation in annealed Cu3Se2 nanowire arrays

We have found for the first time that Cu₃Se₂ nanowired products encased inside the alumina pores by electrodeposition demonstrate the promising nonlinear optical properties in UV-vis-NIR spectra region. Furthermore, the annealing of these products results in the formation of Cu_2−xSe with x depending on the annealing temperature. Optical nonlinearities of as-grown and thermally treated copper selenide nanowire arrays were evidenced using the standard open-aperture Z-scan and laser pump-probe techniques.     

Electro- and thermoreflectance of Bi2Te3 and Bi2Se3

Electroreflectance measurements in Bi₂Te₃ and Bi₂Se₃ with the electric field vector of the incident light both inclined and perpendicular to the C-axis have been made at room temperature. The structures found by other workers in the reflection measurements are observed in the present experiment, together with new structures at 0.91 eV, 1.18 eV, 1.78 eV, and 2.61 eV in Bi₂Se₃ which are not related to formerly observed transitions. From these measurements, the selection rules for direct optical transitions in Bi₂Te₃ and Bi₂Se₃ are studied. Thermoreflectance measurements are also made at both room and liquid-nitrogen temperatures. The positions of the peaks obtained in the present work are compared with the electroreflectance and reflection data.     

Suppression of the spin-glass state by indirect exchange via charge carriers in spinellides xCuCr2Se4-(1−x)Cu0.5Me0.5Cr2Se4 (Me = Ga,In)

Spin glass (SG) is observed in semiconducting solid solutions xCuCr₂Se₄-(1?x)Cu_0.5Me_0.5Cr₂Se₄ (Me = In, Ga) for 0?x?0.1. For x0.1 the material exhibits p-type metal conductivity. For x?0.6 the magnetic properties are purely ferromagnetic (FM), while for 0.1 <x?0.2 an unusual mixed two-phase SG+FM state is found. Indirect exchange via charge carriers is assumed to be responsible for SG suppression.     

Kinetic study of non-isothermal crystallization of BixSe100−x chalcogenide glasses

Results of differential thermal analysis (DTA) under non-isothermal conditions on four glasses of Bi_xSe_100−x (x=5, 10, 15 and 25 at%) are reported and discussed. The glass transition temperatures (T_g), the onset crystallization temperatures (T_c) and the peak temperatures of crystallization (T_p) were found to be dependent on the compositions and the heating rates. From the dependence on the heating rates of (T_g) and (T_p), the activation energy for glass transition, E_g, and the activation energy for crystallization, E_c, are calculated and their composition dependence is discussed. The crystalline phases resulting from DTA and scanning electron microscopy (SEM) have been identified using X-ray diffraction. According to the Avrami exponent (n), the results show a one-dimensional growth for the composition Bi₅Se₉₅ and two-dimensional growth for the compositions Bi₁₀Se₉₀, Bi₁₅Se₈₅ and Bi₂₅Se₇₅. The kinetic parameters determined have made it possible to discuss the glass-forming ability.     

Superconductivity and non-metallicity induced by doping the topological insulators Bi2Se3 and Bi2Te3

We show that by Ca doping the Bi₂Se₃ topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppresses the bulk conductivity. Non-metallic Bi₂Se₃ crystals are obtained. On the other hand, the Bi₂Se₃ topological insulator can also be induced to become a bulk superconductor, with T_c∼3.8 K, by copper intercalation in the van der Waals gaps between the Bi₂Se₃ layers. Likewise, an as-grown crystal of metallic Bi₂Te₃ can be turned into a non-metallic crystal by slight variation in the Te content. The Bi₂Te₃ topological insulator shows small amounts of superconductivity with T_c∼5.5 K when reacted with Pd to form materials of the type Pd_zBi₂Te₃.     

Stoichiometry,electrical properties,and electronic structure of Cr1.70Nb2.30Se10

Both powder and single-crystal X-ray investigations show that Cr_{1 + x}Nb_3?xSe₁₀ which belongs to the FeNb₃Se structure type, exists only in a narrow range of stoichiometry close to x=0.70. In contrast to the Fe analog, Cr_1.70Nb_2.30Se₁₀ undergoes no disticnt metal-insulator transition; the resistivity and the thermoelectric power remain of the same order as the temperature is lowered from 300 K to 4.2 K. The thermoelectric powers S of Fe_{1 + x}Nb_3?xSe₁₀ (0.25<x<0.40) and FeVNb₂Se₁₀, however, follow such a temperature T dependence as $\text{S∝}\text{1}\text{T}$ even at room temperature. On the basis of light-binding band calculations, these observations are interpreted in terms of the contribution of Cr or Fe d-orbitals to electron conduction.     

Superconductivity in the neptunium Chevrel phase Np1+xMo6Se8

The neptunium based Chevrel phases Np_1.0Mo₆Se₈ have been synthesized and their magnetic susceptibility and electrical resistivity have been measured from 3 K to room temperature. These compounds are superconductors with a critical temperature T_c = 5.6 (0.1) K. The magnetic susceptibility shows large crystal field effects with probably an important non-cubic component.     

Hall effect of FeTe and Fe(Se1–xTex) thin films

The Hall effect is investigated in thin-film samples of iron–chalcogenide superconductors in detail. The Hall coefficient (R_H) of FeTe and Fe(Se_1–xTe_x) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se_0.4Te_0.6) and Fe(Se_0.5Te_0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se_1–xTe_x), it is suggested that the coexistence of ‘itinerant’ carriers both in electron and hole channels is indispensable for the occurrence of superconductivity.     

二维GaTe/Bi2Se3异质结：一类有潜力的Z型光解水催化剂

本文基于第一性原理方法,计算了二维GaTe/Bi₂Se₃异质结的电子结构、界面电荷转移、静电势分布、吸收光谱及光催化性质. 计算结果表明异质结是一个小能隙的准直接半导体,能有效捕获太阳光. 由于相对较强的界面內建极化电场和带边轻微弯曲,导致异质结中的光生电子和空穴分别有效分离在GaTe单层和Bi₂Se₃薄片上,可用于析氢和产氧. 这些理论计算结果意味着二维GaTe/Bi₂Se₃异质结是一类有潜力的Z型太阳能全解水催化剂.     

Phase diagram for stripes in YBa2Cu3O6+x superconductors

Neutron scattering has been used to measure the charge and spin structure in the YBa₂Cu₃O_6+x superconductors. Incommensurate static charge ordering is found at low doping levels while only charge fluctuations are found at higher doping. The spin structure is complex with both a commensurate resonance and incommensurate structure observed at low temperatures. The scattering results are used to construct a phase diagram for stripes in the YBa₂Cu₃O_6+x system.     

Vortex Excitations Above Tc in the Cuprate Superconductor Bi2Sr2Ca2Cu3O10 as Revealed by ESR

Using electron spin resonance (ESR) technique we have obtained data evidencing the existence of magnetic vortices in high-temperature superconductors at temperatures above the critical one T _c. We have studied magnetic excitations in Bi₂Sr₂Ca₂Cu₃O₁₀ single crystals above T _c with the method of surface spin decoration. The surface layer of diphenylpicrylhydrazyl was used as a sensitive probe of magnetic field distortions. The temperature dependence of the ESR signal parameters has indicated that far above T _c the magnetic flux of a sample is affected by the superconducting order parameter fluctuations while close to T _c its changes are due to vortex-type excitations.     

An analysis of the thermoelectric efficiency of n-(Bi,Sb)2(Te,Se,S)3 solid solutions within an isotropic scattering model

A study is reported on the thermoelectric properties of n-type solid solutions Bi₂Te_3?y Se_y (y=0.12, 0.3, 0.36), Bi_2?x Sb_xTe_3?y Se_y (x=0.08, 0.12; y=0.24, 0.36), and Bi₂Te_3?z S_z (z=0.12, 0.21) as functions of carrier concentration within the 80-to 300-K range. It has been established that the highest thermoelectric efficiency Z is observed in the Bi₂Te_3?y Se_y (y=0.3) solid solution containing excess Te at optimum carrier concentrations (0.35×10¹⁹ cm^?3) and at temperatures from 80 to 250 K. The increase in Z in the Bi₂Te_3?y Se_y solid solution compared with Bi_2?x Sb_xTe_3?y Se_y and Bi₂Te_3?z S_z is accounted for by the high mobility μ₀, an increase in the effective mass m/m ₀ with decreasing temperature, the low lattice heat conductivity κ_L, and the weak anisotropy of the constant-energy surface in a model assuming isotropic carrier scattering.     

Increased critical current density and pinning in thick Ag/YBa2Cu3O7−x multilayers

We have investigated the superconducting properties of Ag/YBa₂Cu₃O_7−x thick multilayers grown by Pulsed Laser Deposition, and found that the artificial pinning centres induced by Ag nanodots lead to a significant increase in critical current, especially in high applied magnetic fields. Transmission Electron Microscopy showed a columnar growth of YBa₂Cu₃O_7−x induced by Ag nanodots, while angle-dependent transport measurements revealed the existence of strong, both isotropic and c-axis correlated, artificial pinning centres.     

Combinatorial exploration of flux material for Bi4Ti3O12 single crystal film growth

The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi₄Ti₃O₁₂ single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi₂O₃ and Bi₄Ti₃O₁₂) and an impurity flux (VO_x, WO_x, CuO_x, BiPO_x, BaO, MoO_x) were fabricated on the SrTiO₃ (0 0 1) substrates. Then, stoichiometric Bi₄Ti₃O₁₂ was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi₂O₃, for Bi₄Ti₃O₁₂ single crystal film.     

Magnetic and charge ordering properties of Bi0.6−xEuxCa0.4MnO3 (0.0≤x≤0.6)

We have studied structure, magnetic and transport properties of polycrystalline Bi_0.6−xEu_xCa_0.4MnO₃ (x=0.0, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6) perovskite manganites. Magnetic measurements show that the charge-ordering temperature (T_CO) decreases with increasing x up to x=0.4 and then slightly increases with further increasing x up to x=0.6. Further, the antiferromagnetic (AFM) ordering temperature (T_N) decreases with increasing x. At T<T_N a transition to metamagnetic glass like state is also seen. Eu doping also leads to enhancement in the magnetic moment and a concomitant decrease in resistivity up to x=0.2 and then an increase in resistivity up to x=0.5. We propose that the local lattice distortion induced by the size mismatch between the A-site cations and 6s² character of Bi³⁺ lone pair electron are responsible for the observed variation in physical properties.     

AC susceptibility and intergranular critical current density study in pure and Ag doped (La1−xYx)2Ba2CaCu5Oz superconductors

The temperature and AC field amplitude variations of AC susceptibility have been measured on pure and 5 wt% Ag doped (La_1−xY_x)₂Ba₂CaCu₅O_z superconductors. The AC susceptibility as a function of field have been analyzed using Kim's critical state model. The temperature dependence of intergranular critical current density and the effective volume fractions of the grains have been estimated. The Ag doped samples show relatively large critical current density due to the improved intergranular coupling. The exponent of temperature variation of critical current density suggests that the weak links form superconductor-normal metal-superconductor (SNS) type of junctions for all the samples.