Dielectric relaxation and ac conductivity of double perovskite oxide Ho2ZnZrO6

Double perovskite oxide holmium zinc zirconate Ho₂ZnZrO₆ (HZZ) is synthesized by solid state reaction technique under a calcination temperature of 1100 °C. The crystal structure has been determined by powder X-ray diffraction, which shows monoclinic phase at room temperature. The variation of dielectric constant (ε′) and loss tangent (tan δ) with frequency is carried out assuming a distribution of relaxation times. The frequency corresponding to loss tangent peak is found to obey an Arrhenius law with activation energy of 89.7 meV. The frequency-dependant electrical data are analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behaviour of imaginary electric modulus shows the temperature-independent nature of the distribution of relaxation times. Nyquist plots are drawn to identify an equivalent circuit and to know the bulk and interface contributions.     

Impedance spectroscopy study and ground state electronic properties of In(Mg1/2Ti1/2)O3

The complex perovskite oxide In(Mg_1/2Ti_1/2)O₃ (IMT) is synthesized by a solid state reaction technique. The X-ray diffraction of the sample at 30 °C shows a monoclinic phase. The dielectric properties of the sample are investigated in the temperature range from 143 to 373 K and in the frequency range from 580 Hz to 1 MHz using impedance spectroscopy. An analysis of the dielectric constant ε′ and loss tangent (tan δ) with frequency is performed assuming a distribution of relaxation times. The Cole-Cole model is used to explain the relaxation mechanism in IMT. The scaling behavior of imaginary part of electric modulus (M″) shows that the relaxation describes the same mechanism at various temperatures. The electronic structure and hence the ground state properties of IMT is studied by X-ray photoemission spectroscopy (XPS). The valence band XPS spectrum is compared with the electronic structure calculation. The electronic structure calculation indicates that the In-5s orbital introduces a significant density of states at the Fermi level, which is responsible for a high value of conductivity in IMT.     

Dielectric relaxation spectroscopy of phlogopite mica

An in-depth investigation of the dielectric characteristics of annealed phlogopite mica has been conducted in the frequency range 0.1 Hz–10 MHz and over the temperature range 653–873 K through the framework of dielectric permittivity, electric modulus and conductivity formalisms. These formalisms show qualitative similarities in relaxation processes. The frequency dependence of the M″ and dc conductivity is found to obey an Arrhenius law and the activation energy of the phlogopite mica calculated both from dc conductivity and the modulus spectrum is similar, indicating that same type of charge carriers are involved in the relaxation phenomena. The electric modulus and conductivity data have been fitted with the Havriliak–Negami function. Scaling of M′, M″, ac conductivity has also been performed in order to obtain insight into the relaxation mechanisms. The scaling behaviour indicates that the relaxation describes the same mechanism at different temperatures. The relaxation mechanism was also examined using the Cole–Cole approach. The study elaborates that the investigation regarding the temperature and frequency dependence of dielectric relaxation in the phlogopite mica will be helpful for various cutting edge applications of this material in electrical engineering.     

The impedance spectroscopic study and dielectric relaxation in A(Ni1/3Ta2/3)O3 [A=Ba,Ca and Sr]

We present the results of impedance spectroscopic study with its analytical interpretations in the framework of electric modulus formalism for Barium Nickel Tantalate Ba(Ni_1/3Ta_2/3)O₃ (BNT), Calcium Nickel Tantalate Ca(Ni_1/3Ta_2/3)O₃ (CNT) and Strontium Nickel Tantalate Sr(Ni_1/3Ta_2/3)O₃ (SNT) synthesized by the solid-state reaction technique. The results of powder X-ray diffraction study reveal that BNT and SNT crystallize in cubic structure with lattice parameter a=4.07 Å and 3.98 Å respectively, whereas CNT crystallizes in monoclinic structure having lattice parameters, a=5.71 Å, b=13.45 Å and c=5.47 Å with β=118.3°. The logarithmic angular frequency dependence of the real part of complex dielectric permittivity and loss tangent as a function of temperature indicate significant dielectric relaxation in the samples, which have been explained by the Debye theory. The frequency dependence of the loss peak and the imaginary part of electrical modulus are found to obey the Arrhenius law. The relaxation mechanism of these samples is modeled by the Cole–Cole equation. This confirms that the polarization mechanism in BNT, CNT and SNT is due to the bulk effect arising in semiconductive grains. The scaling behavior of imaginary part of electric modulus M″ suggests that the relaxation describes the same mechanism at various temperatures but relaxation frequency is strongly temperature dependent. The normalized peak positions of tan δ/tan δ_m and M″/M″_m versus log ω for BNT, CNT and SNT do not overlap completely and are very close to each other. These indicate the presence of both long-range and localized relaxation. Due to their high dielectric constant and low loss tangent, these materials may find several technological applications such as in capacitors, resonators, filters and integrated circuits.     

Dielectric relaxation in complex perovskite oxide BaCo1/2W1/2O3

Polycrystalline BaCo_1/2W_1/2O₃ (BCW) is prepared by the solid-state reaction technique. The X-ray diffraction study of the compound at room temperature reveals the monoclinic phase. The field dependence of the dielectric constant and the conductivity are measured in the frequency range from 50 Hz to1 MHz and in the temperature range from 300 to 413 K. An analysis of the real and imaginary parts of the dielectric permittivity with frequency is performed. The frequency-dependent maxima in the imaginary impedance are found to obey an Arrhenius law with an activation energy=0.86 eV. The frequency-dependent electrical data are also analysed in the framework of the conductivity and modulus formalisms.     

Effect of nickel doping on structural, optical and electrical properties of TiO2 nanoparticles by sol-gel method

Nickel-doped anatase TiO₂ nanoparticles have been prepared by sol-gel method. The X-ray powder diffraction study reveals that all the prepared samples have pure anatase phase tetragonal system. The average crystallite size of the prepared sample is 14 nm, when found through transmission electron microscope. A strong frequency dependence of both dielectric constant (?′) and dielectric loss (tan δ) were observed for various dopant levels at room temperature in the frequency range of 42 Hz to 5 MHz. At low frequency, the piling up of mobile charge carriers at the grain boundary produces interfacial polarization giving rise to high dielectric constant. The asymmetric shape of frequency dependence of the dielectric loss for the primary relaxation process is observed for each concentration. From the ac conductivity studies, the reduction in conductivity may arise due to the decreasing particle with the increase in Ni-dopant level.     

Study of (Bi2O3)(BaxMo1−xO3) polycrystalline ceramic as relaxor ferroelectric

Solid solutions of bismuth layered (Bi₂O₃)(Ba_xMo_1−xO₃) (0.2≤x≤0.8, x is in step of 0.2) ceramics were prepared by conventional solid-state reaction of the constitutive oxides at optimized temperatures with a view to study its electrical properties. Powder X-ray diffraction has been employed for physical characterization and an average grain size of ∼16 to 22 nm was obtained. XRD study reveals the single phase structure of the samples. Dielectric properties such as dielectric constant (ε′), dielectric loss (tanδ) and ac electrical conductivity (σ_ac) of the prepared ceramics sintered at various temperatures in the frequency range 10¹–10⁷ Hz have been studied. A strong dispersion observed in the dielectric properties shows the relaxor type behavior of the ceramic. The presence of maxima in the dielectric permittivity spectra indicates the ferroelectric behavior of the samples. Impedance plots (Cole–Cole plots) at different frequencies and temperatures were used to analyze the electric behavior. The value of grain resistance increases with the increase in Ba ion concentration. The conductivity mechanism shows a frequency dependence, which can be ascribed to the space charge mainly due to the oxygen vacancies. The relaxation observed for the M″ (ω) or Z″ (ω) curves is correlated to both localized and long range conduction. A single ‘master curve’ for the normalized plots of all the modulus isotherms observed for a given composition indicates that the conductivity relaxation is temperature independent.     

Synthesis, crystal structure, dielectric and optical properties of a new rare earth double perovskite: Ca2CeNbO6

In order to develope and understand the phenomena involved in producing advanced materials, a rare earth double perovskite oxide calcium cerium niobate, Ca₂CeNbO₆ (CCN) is synthesized for the first time. The x-ray diffraction pattern of CCN at room temperature (300K) shows orthorhombic perovskite structure, with the lattice parameters, a=9.36Å, b=6.61Å and c=5.88Å and α=β=γ= 90°. A scanning electron micrograph shows the formation of grains with average size ∼2μm. Impedance spectroscopy and Fourier transform infrared spectroscopy are applied to investigate the dielectric and optical properties of CCN. The frequency-dependent electrical data are analyzed in the framework of the conductivity and modulus formalisms. The experimental data of real part of dielectric permittivity (ε′) and imaginary part of electric modulus (M″) are fitted with Davidson-Cole equation to explore the idea of dielectric relaxation (conduction) mechanism in CCN. The frequency-dependent conductivity spectra follow a power law. The scaling behaviour of imaginary electric modulus (M″) suggests that the relaxation describes the same mechanism at various temperatures.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

Complex impedance spectroscopic studies of Ba(Pr1/2Ta1/2)O3 ceramic

The polycrystalline sample of Ba(Pr_1/2Ta_1/2)O₃ was prepared by a high-temperature solid-state reaction technique. The crystal symmetry, space group and unit cell dimensions were derived from the experimental results using FullProf software. XRD analysis of the compound indicated the formation of a single-phase tetragonal structure with the space group P4/mmm (1 2 3). Impedance and electric modulus analysis were used as tools to analyze the electrical behavior of the sample as a function of frequency at different temperatures. The impedance analysis of the compound indicated a typical negative temperature coefficient of resistance behavior, and dielectric relaxation was found to be of non-Debye type. The frequency dependent maximum of the imaginary part of the electric modulus follows the Arrhenius law with activation energy of 0.15 eV. The ac conductivity data obeys double power law.     

Dielectric and AC conductivity behavior of BaBi2Nb2O9 ceramics

The complex dielectric and AC conductivity response of BaBi₂Nb₂O₉ relaxor ferroelectric ceramics were studied as a function of frequency (100 Hz-10 MHz) at various temperatures. The observed dielectric behavior was characterized by two types of relaxation processes which were described by the ‘universal relaxation law’. The frequency dependence of conductivity which showed a classical relaxor behavior followed the Jonscher's universal law σ(ω)=σ₀+Aωⁿ. The exponent n exhibited a minimum in the vicinity of temperatures of dielectric anomaly while the pre-factor A showed a maximum. The temperature dependence of n followed the Vogel-Fulcher relation with activation energy of about 0.14 eV.     

Structural and ac electrical properties of a newly synthesized single phase rare earth double perovskite oxide: Ba2CeNbO6

A single phase rare earth double perovskite oxide Ba₂CeNbO₆ (BCN) is synthesized by solid-state reaction technique for the first time. The X-ray diffraction pattern of the sample at room temperature shows monoclinic structure, with the lattice parameters, a=5.9763 Å, b=5.975 Å and c=8.48 Å and β=90.04°. Impedance spectroscopy is used to study the ac electrical behavior of this material as a function of frequency (10²-10⁶ Hz) at various temperatures (30-450 °C). A relaxation is observed in the entire temperature range. Conduction mechanism is investigated by fitting the complex impedance data to Cole-Cole equation. Complex impedance plane plots show only one semicircular arc, indicating only the grain contribution of dielectric relaxation. The scaling behavior of imaginary part of electric modulus (M″) and imaginary part of electrical impedance (Z″) suggests that the relaxation describes the same mechanism at various temperatures. The frequency dependence of conductivity is interpreted in terms of the jump relaxation model and is fitted to Jonscher's power law. The values of dc conductivities extracted from the Jonscher power law varies from 2.79×10⁻⁷ to 3.5×10⁻⁵ Sm⁻¹ with the increase in temperature from 100 to 450 °C. The activation energies (0.37 eV) extracted from M″(ω) and Z″(ω) peaks are found to follow the Arrhenius law.     

Dielectric properties of CdS nanoparticles synthesized by soft chemical route

CdS nanoparticles have been synthesized by a chemical reaction route using thiophenol as a capping agent. The frequency-dependent dielectric dispersion of cadmium sulphide (CdS) is investigated in the temperature range of 303-413 K and in a frequency range of 50 Hz-1 MHz by impedance spectroscopy. An analysis of the complex permittivity (ɛ′ and ɛ″) and loss tangent (tan δ) with frequency is performed by assuming a distribution of relaxation times. The scaling behaviour of dielectric loss spectra suggests that the relaxation describes the same mechanism at various temperatures. The frequency-dependent electrical data are analysed in the framework of conductivity and modulus formalisms. The frequency-dependent conductivity spectra obey the power law.     

Dielectric parameters in Se70Te30 and Se70Te28Zn2 chalcogenide glasses

Temperature and frequency dependence of dielectric constant (ε′) and dielectric loss (ε″) are studied in glassy Se₇₀Te₃₀ and Se₇₀Te₂₈Zn₂. The measurements have been made in the frequency range (8-500 kHz) and in the temperature range 300 to 350 K. An analysis of the dielectric loss data shows that the Guintini's theory of dielectric dispersion based on two-electron hopping over a potential barrier is applicable in the present case.No dielectric loss peak is observed in glassy Se₇₀Te₃₀. However, such loss peaks exist in the glassy Se₇₀Te₂₈Zn₂ in the above frequency and temperature range. The Cole-Cole diagrams have been used to determine some parameters such as the distribution parameter (α), the macroscopic relaxation time (τ₀), the molecular relaxation time (τ) and the Gibb's free energy for relaxation (ΔF).     

Rietveld refinement and impedance spectroscopy of calcium titanate

Single phase perovskite CaTiO₃ has been synthesized by conventional solid state reaction technique. The ceramic was characterized by XRD at room temperature and its Rietveld refinement inferred orthorhombic crystal structure with the space group Pbnm. The field dependence of dielectric relaxation and conductivity was measured over a wide frequency range from room temperature to 673 K. Analysis of Nyquist plots of CaTiO₃ revealed the contribution of many electrically active regions corresponding to bulk mechanism, distribution of grain boundaries and electrode processes. The dc conductivity depicted a semiconductor to metal type transition. Frequency dependence of dielectric constant (ε′) and tangent loss (tan δ) show a dispersive behavior at low frequencies and is explained on basis of Maxwell-Wagner model and Koop's theory. Both conductivity and electric modulus formalisms have been employed to study the relaxation dynamics of charge carriers. The variation of ac conductivity with frequency at different temperatures obeys the universal Jonscher's power law (σ_ac α ω^s). The values of exponent ‘s’ lie in the range 0.13 ≤ s ≤ 0.33, which in light of CBH model suggest a large polaron hopping type of conduction mechanism.     

Crystal structure,NMR study,dielectric relaxation and AC conductivity of a new compound [Cd3(SCN)2Br6(C2H9N2)2]n

The crystal structure, the ¹³C NMR spectroscopy and the complex impedance have been carried out on [Cd₃(SCN)₂Br₆(C₂H₉N₂)₂]_n. Crystal structure shows a 2D polymeric network built up of two crystallographically independent cadmium atoms with two different octahedral coordinations. This compound exhibits a phase transition at (T=355±2 K) which has been characterized by differential scanning calorimetry (DSC), X-rays powder diffraction, AC conductivity and dielectric measurements. Examination of ¹³C CP/MAS line shapes shows indirect spin–spin coupling (¹⁴N and ¹³C) with a dipolar coupling constant of 1339 Hz. The AC conductivity of this compound has been carried out in the temperature range 325–376 K and the frequency range from 10⁻² Hz to 10 MHz. The impedance data were well fitted to two equivalent electrical circuits. The results of the modulus study reveal the presence of two distinct relaxation processes. One, at low frequency side, is thermally activated due to the ionic conduction of the crystal and the other, at higher frequency side, gradually disappears when temperature reaches 355 K which is attributed to the localized dipoles in the crystal. Moreover, the temperature dependence of DC-conductivity in both phases follows the Arrhenius law and the frequency dependence of σ(ω,T) follows Jonscher's universal law. The near values of activation energies obtained from the conductivity data and impedance confirm that the transport is through the ion hopping mechanism.     

Dielectric and modulus behavior of LiFe1/2Ni1/2VO4 ceramics

The polycrystalline sample of LiFe_1/2Ni_1/2VO₄ was prepared by a standard solid-state reaction technique and confirmed by X-ray diffractometry. LiFe_1/2Ni_1/2VO₄ has orthorhombic crystal structure whose dielectric and electric modulus properties were studied over a wide frequency range (100 Hz–1 MHz) at different temperatures (296–623 K) using a complex impedance spectroscopy (CIS) technique. The frequency and temperature dependence of dielectric constant (ε_r) and tangent loss (tan δ) of LiFe_1/2Ni_1/2VO₄ are studied. The variation of ε_r as a function frequency at different temperatures exhibits a dispersive behavior at low frequencies. The variation of the ε_r as a function of temperature at different frequencies shows the dielectric anomaly in ε_r at 498 K with maximum value of dielectric constant 274.49 and 96.86 at 100 kHz and 1 MHz, respectively. Modulus analysis was carried out to understand the mechanism of the electrical transport process, which indicates the non-exponential type of conductivity relaxation in the material. The activation energy calculated from electric modulus spectra is 0.38 eV.     

Dielectric properties and relaxation behavior of [TMA]2Zn0.5Cu0.5Cl4 compound

The [TMA]₂Zn_0.5Cu_0.5Cl₄ hybrid material was prepared and its dielectric spectra were measured in the 10⁻¹ Hz-10⁶ Hz frequency range and 200-305 K temperature interval. The dielectric permittivity showed a ferroelectric-paraelectric phase transition at 293 K. Double relaxation peaks are observed in the imaginary part of the electrical modulus, suggesting the presence of grain and grain boundary in the sample. The frequency dependent conductivity was interpreted in term of Jonscher's law: σ(ω)=σ_dc+Aωⁿ. The temperature dependent of the dc conductivity (σ_dc) was well described by the Arrhenius equation: σ_dcT=σ_o×exp(−E_a/kT).     

BiFeO3 ceramic matrix with Bi2O3 or PbO added: Mössbauer, Raman and dielectric spectroscopy studies

In this paper Mössbauer, Raman and dielectric spectroscopy studies of BiFeO₃ (BFO) ceramic matrix with 3 or 10 wt% of Bi₂O₃ or PbO added, obtained through a new procedure based on the solid-state method, are presented. Mössbauer spectroscopy shows the presence of a single magnetically ordered phase with a hyperfine magnetic field of 50 T. Raman spectra of BFO over the frequency range of 100-900 cm⁻¹ have been investigated, at room temperature, under the excitation of 632.8 nm wavelength in order to evaluate the effect of additives on the structure of the ceramic matrix. Detailed studies of the dielectric properties of BiFeO₃ ceramic matrix like capacitance (C), dielectric permittivity (ε) and dielectric loss (tan δ), were investigated in a wide frequency range (1 Hz-1 MHz), and in a temperature range (303-373 K). The complex impedance spectroscopy (CIS) technique, showed that these properties are strongly dependent on frequency, temperature and on the added level of impurity. The temperature coefficient of capacitance (TCC) of the samples was also evaluated. The study of the imaginary impedance (−Z″) and imaginary electric modulus (M″) as functions of frequency and temperature leads to the measurement of the activation energy (E_ac), which is directly linked to the relaxation process associated with the interfacial polarization effect in these samples.     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.