Structural, electronic and optical properties of orthorhombic distorted perovskite TbMnO3

This paper calculates the structural parameters, electronic and optical properties of orthorhombic distorted perovskite-type TbMnO3 by first principles using density functional theory within the generalised gradient approximation. The calculated equilibrium lattice constants are in a reasonable agreement with theoretical and experimental data. The energy band structure, density of states and partial density of states of elements are obtained. Band structures show that TbMnO3 is an indirect band gap between the O 2p states and Mn 3d states, and the band gap is of 0.48 eV agreeing with experimental result. Furthermore, the optical properties, including the dielectric function, absorption coefficient, optical reflectivity, refractive index and energy loss spectrum are calculated and analysed, showing that the TbMnO3 is a promising dielectric material.     

Structural,electronic and optical properties of cubic SrTiO3 and KTaO3: Ab initio and GW calculations

We present first-principles VASP calculations of the structural, electronic, vibrational, and optical properties of paraelectric SrTiO₃ and KTaO₃. The ab initio calculations are performed in the framework of density functional theory with different exchange-correlation potentials. Our calculated lattice parameters, elastic constants, and vibrational frequencies are found to be in good agreement with the available experimental values. Then, the bandstructures are calculated with the GW approximation, and the corresponding band gap is used to obtain the optical properties of SrTiO₃ and KTaO₃.     

Structural properties of zinc-blende Ga<Subscript>x</Subscript>In<Subscript>1-x</Subscript>N: ab initio calculations

We present a theoretical study of the structural properties, namely lattice constant, bulk modulus and its pressure derivative of zinc-blende Ga_xIn_1-xN. The calculations are performed using first-principles calculations in the framework of the density-functional-theory within the local density approximation under the virtual crystal approximation. The computed values are in good agreement with the available experimental data. The composition dependence of the studied quantities is examined. Besides, the deviation of the alloy lattice constant from Vegard's law is evaluated.     

Electronic structures and magnetoelectric properties of tetragonal BaFeO3: an ab initio density functional theory study

First-principles calculations have been performed to investigate the ground state electronic properties of BaFeO₃ (BFO). Local spin density approximation (LSDA) plus U (LSDA+U) treatment modified the metallic behaviour to insulated one with a band gap of 4.12eV. The spontaneous polarization was found to be 89.3\muC/cm² with Berry phase scheme in terms of the modern theory of polarization. Fe-3d e_g were split into two singlet states (d_z² and d _x²-y²}), and Fe-3d t_2g were split into one doublet states(d_xz and d_yz) and one singlet states(d_xy) after Fe and O displaced along the c axis. Meanwhile the occupation numbers of d_z², d_yz, d_xz and O_T p_z (on the top of Fe) were increased at the expense of those in xy plane. Our results showed that it was the sensitivity of hybridization to ferroelectric distortions, not just the total change of hybridization, that produced the possibility of ferroelectricity. Moreover, the increasing occupation numbers of O_T p_z and Fe d_z² favoured the 180^o coupling between Fe-3d e_g and Fe-3d t_2g, leading to ferromagnetic ordering, which has been confirmed by the increase of magnetic moment by 0.13μ_B per formula unit in the polarized direction. Hence, the magnetization can be altered by the reversal of external electric field.     

第一性原理研究Fe掺杂SnO2材料的光电性质

采用基于第一性原理的线性缀加平面波(FP-LAPW)方法,研究Fe掺杂SnO₂材料电子结构和光学性质,包括电子态密度、能带结构、介电函数和其他一些光学图谱. 研究结果表明,掺Fe后材料均属于直接跃迁半导体,且呈现半金属性;随掺杂浓度增加,费米能级进入价带,带隙逐渐减小,Fe原子之间耦合作用增强;通过掺杂能够在一定程度上改变成键性质,使其具有金属键性质. 光学谱线(吸收谱、消光系数等)与介电函数虚部谱线相对应,均发生蓝移,各峰值与电子跃迁吸收有关,从理论上指出光学性质和电子结构的内在联系. 关键词： 能带结构 态密度 光学性质 介电函数     

Structural,electronic and optical properties of Ca3Bi2: First-principles investigation

In this work by applying first principles calculations structural, electronic and optical properties of Ca₃Bi₂ compound in hexagonal and cubic phases are studied within the framework of the density functional theory using the full potential linearized augmented plane wave (FP-LAPW) approach. According to our study band gap for Ca₃Bi₂ in hexagonal phase are 0.47, 0.96 and 1?eV within the PBE-GGA, EV-GGA and mBJ-GGA, respectively. The corresponding values for cubic phase are 1.24, 2.08 and 2.14?eV, respectively. The effects of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths and anti-symmetry gap are investigated. It is found that the hydrostatic pressure increases the band widths of all bands below the Fermi energy while it decreases the band gap and the anti-symmetry gap. In our calculations, the dielectric tensor is derived within the random phase approximation (RPA). The first absorption peak in imaginary part of dielectric function for both phases is located in the energy range 2.0–2.5?eV which are beneficial to practical applications in optoelectronic devices in the visible spectral range. For instance, hexagonal phase of Ca₃Bi₂ with a band gap around 1?eV can be applied for photovoltaic application and cubic phase with a band gap of 2?eV can be used for water splitting application. Moreover, we found the optical spectra of hexagonal phase are anisotropic along E||x and E||z.     

Structural and electronic properties of YPd5Al2

We present a study of structural and electronic properties of YPd₅Al₂. Specific-heat measurements reveal a relatively low Sommerfeld coefficient of the electronic contribution γ=4.1 mJ mol⁻¹ K⁻². No superconductivity is found down to 0.4 K. First-principles electronic-structure calculations based on density-functional theory have been performed and have been compared with available experimental structural and electronic data.     

First-principles calculations of structural and electronic properties of Tl_xGa_(1-x)As alloys

The zincblende ternary alloys Tl_xGa_(1-x) As(0 x 1) are studied by numerical analysis based on the plane wave pseudopotential method within the density functional theory and the local density approximation. To model the alloys,16-atom supercells with the 2 × 2 × 2 dimensions are used and the dependency of the lattice parameter, bulk modulus,electronic structure, energy band gap, and optical bowing on the concentration x are analyzed. The results indicate that the ternary Tl_xGa_(1-x) As alloys have an average band gap bowing parameter of 4.48 eV for semiconductor alloys and 2.412 eV for semimetals. It is found that the band gap bowing strongly depends on composition and alloying a small Tl content with GaAs produces important modifications in the band structures of the alloys.     

Magnetic and electronic properties of Cr- and Mn-doped SnO2: ab initio calculations

The ab initio calculations, based on the Korringa–Kohn–Rostoker (KKR) approximation method combined with the coherent potential approximation (CPA), indicated as KKR–CPA, have been used to study the stability of ferromagnetic and ferrimagnetic states, for systems that are SnO₂ doped and co-doped with two transition metals, that is, chromium and manganese. Our results indicate that the ferromagnetic state is more stable than the spin-glass state for the (Sn_1−xCr_xO₂; x = 0.07, 0.09, 0.12 and 0.15)-doped system, while the spin-glass state is more stable than the ferromagnetic state for the (Sn_1−xMn_xO₂; x = 0.02 and 0.05)-doped system. However, the ferromagnetic and/or the ferrimagnetic states are stable for the (Sn_0.98−xMn_0.02Cr_xO₂; x = 0.05, 0.09 and 0.13)-doped system depending on the Cr concentration. Moreover, we estimated the Curie temperature (T_c) for the Cr-doped tin dioxide (SnO₂), and we explained the origin of magnetic behaviour through the total density of states for different doped and co-doped SnO₂ systems.     

Study of magnetic and optical properties of Zn_(1-x)TM_xTe(TM = Mn,Fe,Co,Ni) diluted magnetic semiconductors:First principle approach

We present structural,magnetic and optical characteristics of Zn_(1-x)TM_xTe(TM = Mn,Fe,Co,Ni and x = 6.25%),calculated through Wien2 k code,by using full potential linearized augmented plane wave(FP-LAPW) technique.The optimization of the crystal structures have been done to compare the ferromagnetic(FM) and antiferromagnetic(AFM) ground state energies,to elucidate the ferromagnetic phase stability,which further has been verified through the formation and cohesive energies.Moreover,the estimated Curie temperatures T_c have demonstrated above room temperature ferromagnetism(RTFM) in Zn_(1-x)TM_xTe(TM =Mn,Fe,Co,Ni and x= 6.25%).The calculated electronic properties have depicted that Mn- and Co-doped ZnTe behave as ferromagnetic semiconductors,while half-metallic ferromagnetic behaviors are observed in Fe- and Ni-doped ZnTe.The presence of ferromagnetism is also demonstrated to be due to both the p-d and s-d hybridizations between the host lattice cations and TM impurities.The calculated band gaps and static real dielectric constants have been observed to vary according to Penn's model.The evaluated band gaps lie in near visible and ultraviolet regions,which make these materials suitable for various important device applications in optoelectronic and spintronic.     

Structural and electronic behavior of Sr2GdRuO6 complex perovskite

We report experimental and theoretical study of crystallographic lattice and electronic structure of Sr₂GdRuO₆ complex perovskite, which is used as precursor in the fabrication process of superconducting ruthenocuprate RuSr₂GdCu₂O₈. Samples were produced by the standard solid state reaction. Rietveld refinement of experimental X-ray diffraction patterns shows that material crystallizes in a monoclinic structure, which belongs to the P2₁/n (#14) space group, with lattice parameters , , , and tilt angle β=90.258. Calculations of electronic structure were performed by the density functional theory. The exchange and correlation potentials were included through the LDA+U approximation. Density of states (DOS) study was carried out considering the two spin polarizations. Results show Gd are majority responsible for the magnetic character in this material, but Ru contribution is also relevant because d-orbital is closer to Fermi level. Theoretical results evidence that Sr₂GdRuO₆ material behaves as a magnetic semiconductor, with 20μ_B effective magnetic moment.     

Ab initio study on magnetoelectric and electronic properties in Pb2TiVO6

First principles calculations within the projected augmented-wave (PAW) method, using the local spin density approximation plus U (LSDA+U) scheme, show that the tetragonal Pb2TiVO6 is a potential multiferroic material with antiferromagnetic (AFM) spin configuration. It has a magnetic moment of 1 μB in a one unit cell originating from the non-bonding orbital dxy in a majority spin channel and a band gap of 1.45 eV with proper U. The large BEC (Born effective charge) of Pb and Ti shows that the stereochemical activity of Pb and Ti may provide the possibility of switchable paths for the ferroelectricity in this hypothetical material. The insulating property and the lower resistivity in the recent prepared PbVO3 can be significantly improved by adopting the Ti.     

A study on strain affecting electronic structures and optical properties of wurtzite Mg0.25 Zn0.75O by first-principles

We have made a first principles study to investigate density of states, band structure, the dielectric function and absorption spectra of wurtzite Mg 0.25 Zn 0.75 O. The calculation is carried out in a-axis and c-axis strain changing in the range from 0.3 to -0.2 in intervals of 0.1. The results calculated from density of states show that the bottom of conduction band is always dominated by Zn 4s and the top of valence band is always dominated by O 2p in a-axis and c-axis strain. Zn 4s will shift to higher energy range when a-axis strain changes in the range from 0.3 to 0, and then shift to lower energy range when a-axis strain changes in the range from 0 to -0.2. But Zn 4s will always shift to higher energy range when c-axis strain changes in the range from 0.3 to -0.2. The variations of band gap calculated from band structure and absorption spectra are also investigated, which are consistent with the results obtained from density of states. In addition, we analyse and discuss the imaginary part of the dielectric function ε 2 .     

用密度泛函理论研究氮化硅新相的电子结构、光学性质和相变

运用第一性原理赝势方法,对氮化硅新相(六方Pˉ6和Pˉ6′相)的电子结构、光学性质和相变过程进行分析,研究能带结构、介电函数谱、反射谱和能量损失函数的变化机理.研究发现,β→Pˉ6→δ相变是可行的,在室温下β→Pˉ6和Pˉ6→δ相变的临界压强分别为42.9和47.7 GPa;相界的斜率为正值表明Pˉ6→δ相变过程伴随着晶胞体积的塌缩;Pˉ6和Pˉ6′相分别属于直接带隙和间接带隙半导体,能隙宽度分别为4.98和4.01 eV;得到了两相的零频介电常数;反射谱表明,两相的强反射峰均位于真空紫外线区域,因此可以用作紫外光屏蔽或紫外探测材料;在可见光区域,两相表现为近似透明.     

Structural,electronic and magnetic properties of hydrogenated BC2N

Density functional theory has been used to study the electronic and magnetic properties as well as the stability on the hydrogenated BC₂N sheets. It is found that two different structures (BC₂NH-I and BC₂NH-II) with the ferromagnetic ground states can be formed when removing the H atoms from one side of semi-hydrogenated BC₂N sheet. By applying tensile strain, both of their magnetisms are robust to 2.0 μ_B. However, the magnetisms are sensitively changed by compressive strain larger than ?6%. The BC₂NH-I system can be transitioned from semiconductor to half-metal and then to metal when the compressive strain is changed from ?6% to ?8%. And the BC₂NH-II system can be changed into half-metal by applying the compressive strain between ?6% and ?7.5%. Our calculation results suggest a possible way to tune the electronic and magnetic properties by choosing the appropriate structural type and the external strain, which would have potential applications in spintronics and nanodevices.     

First-principles investigation of structural,electronic and optical properties of IVA group spinel nitrides

The Si₃N₄ and Ge₃N₄ are important structural ceramics with many applications because of their attractive high temperature and oxidation resistant properties. The high-pressure and high-temperature spinel phases of these two materials were noticed to have wide, direct electronic band gaps. Other single and double spinel nitrides formed from IVA and IVB group elements have also attracted much attention. Present research focuses on selecting a special substance with promising optical properties and stability besides the attractive electronic properties. The formation energies of spinel nitrides are calculated and stabilities of a group of spinel nitrides are discussed, the structural and electronic properties of them are investigated in detail. By random phase approximation (RPA), the optical properties of spinel nitrides are researched. We obtain that γ-SiGe₂N₄ has some promising properties with potential technological applications from various aspects. The band transitions which contribute most to the peak of ε₂ have been identified. An assumption is proposed to raise the peak of ε₂.     

Structure, stability and magnetic properties of the Fe3O4(1 1 0) surface: Density functional theory study

Six surface models for the Fe₃O₄(1 1 0) surface were studied using the density functional theory (DFT), namely the AB-terminated surface (AB model), the AB-terminated with Fe_A vacancy (AB-Fe_A vac model), the AB-terminated with Fe_B vacancy (AB-Fe_B vac model), the B-terminated surface (B model), the B-terminated surface with Fe_B vacancy (B-Fe_B vac model), and the B-terminated surface with O vacancy (B-O vac model). Here, A and B denoted the Fe cations in tetrahedrally (Fe_A) and octahedrally (Fe_B) coordinated interstices. The stability, the electronic structure and the magnetic properties of the six surface models were also calculated. The results predict that the B-O vac model is more stable than other surface models. The half-metallic property remains in the AB and B models, while the other four surface models exhibit metallic properties. At the same time, the AB, AB-Fe_A vac, AB-Fe_B vac, B and the B-Fe_B vac models have ferrimagnetic properties, while the B-O vac model has antiferromagnetic property.     

Comparative study of crystal field effects for Ni ion in LiGa5O8, MgF2 and AgCl crystals

Exchange charge model (ECM) of crystal field was used to calculate the crystal field parameters (CFPs) and model the energy levels for Ni²⁺ ion in LiGa₅O₈, MgF₂ and AgCl crystals. Calculated energy levels (including splitting of the orbital triplets) are in good agreement with experimental absorption spectra. Covalent effects were shown to play an important role in all considered crystals. Bilinear forms built up from the overlap integrals between (Ni²⁺-Cl⁻)→(Ni²⁺-O²⁻)→(Ni²⁺-F⁻) pairs were considered a quantitative measure of the covalent (nephelauxetic) effects.     

Theoretical studies on the structural, electronic, and optical properties of Cu2CdGeSe4

We investigate the electronic structure for Cu₂CdGeSe₄ in stannite structure with the first-principles method. This crystal is the direct band gap compound. In addition, the dielectric function, absorption coefficient, reflectivity, and energy-loss function are studied using the density functional theory within the generalized gradient approximation. We discuss the optical transitions between the valence bands and the conduction bands in the spectra of the imaginary part of the dielectric function at length. We also find a very high absorption coefficient and wide absorption spectrum for this material. The prominent structures in the spectra of reflectivity and energy-loss function are discussed in detail.     

Structural, elastic, and electronic properties of orthorhombic NH3BH3: An ab initio study

At the generalized gradient approximation (GGA), the elastic constants of the orthorhombic phase of NH₃BH₃ were calculated with plane-wave pseudo-potential method. Our calculation showed that the orthorhombic phase NH₃BH₃ is a loose and brittle material, as well as hard to be deformed, also we calculated the elastic anisotropies and the Debye temperatures from the elastic constants. And from the band structure and density of state (DOS), we concluded that NH₃BH₃ is a wide-gap semiconductor and the band gap is almost 6.0 eV. The bonds between N atoms and H atoms show a strong covalent characteristic, B atoms and H atoms form ironic bonds, and so as to the B-N bonds. Electrons from the B atoms are absorbed by the H atoms around the B atoms, and the H atoms display electronegativity.