Model for optical pattern and cavity soliton formation in a microresonator with self-assembled semiconductor quantum dots

We have developed a model that describes the optical response of a semiconductor quantum dot medium in a cavity in order to investigate pattern and cavity solitons formation. This model, beyond the inclusion of the inhomogeneous broadening of the quantum dot linewidth [1] (due the fluctuations of the quantum dot sizes that arise in self-organized growth), takes into account more complex phenomena such as the thermal escape and capture as well as Auger scattering mechanisms coupling the quantum dot itself with the wetting layer, and carrier diffusion in the unconfined directions of the wetting layer. We have studied the conditions for the onset of bistability and modulational instability and characterize the patterns formed at the bifurcated solutions. New features brought by these terms and indications on the most favourable regimes for cavity solitons formation are discussed. PACS 42.65.Sf; 42.65.An; 78.67.Hc     

Effect of a magnetic impurity on the optical properties of a spherical ZnSe quantum dot

We consider the electron and hole states in a semiconductor ZnSe spherical quantum dot, in the center of which a magnetic impurity atom of manganese is located. In calculations the quantum dot is approximated by a spherical rectangular well with a finite depth. Within the framework of perturbation theory, the effect of exchange spin interaction of an electron and a hole with a magnetic impurity on the band structure of the system is considered. The optical spectrum of the system for different polarizations of the incident light is studied also.     

Mechanisms of Auger recombination in semiconducting quantum dots

Microscopic calculation of the probability of Auger recombination of charge carriers localized in a semiconducting quantum dot (QD) is carried out. It is shown that two mechanism of Auger recombination (nonthreshold and quasi-threshold) operate in the QD. The nonthreshold Auger recombination mechanism is associated with scattering of a quasimomentum from a heterobarrier, while the quasi-threshold mechanism is connected with spatial confinement of the wave functions of charge carriers to the QD region; scattering of carriers occurs at the short-range Coulomb potential. Both mechanisms lead to a substantial enhancement of Auger recombination at the QD as compared to a homogeneous semiconductor. A detailed analysis of the dependence of Auger recombination coefficient on the temperature and QD parameters is carried out. It is shown that the nonthreshold Auger recombination process dominates at low temperatures, while the quasi-threshold mechanism prevails at high temperatures. The dependence of the Auger recombination coefficient on the QD radius experiences noticeable changes as compared to quantum wells and quantum filaments.     

声子和温度对球型量子点中极化子性质的影响

采用求解能量本征方程、幺正变换及变分相结合的方法,研究声子和温度对球型量子点中极化子性质的影响.数值计算表明,声子效应导致极化子的基态能量低于电子能量,且极化子基态能量随电子-声子耦合强度的增大而降低.数值计算还表明,当温度较低,使得电子热运动能量小于声子能量时,声子不会被激发,极化子的基态能量不随温度的变化而变化;在温度较高,使得电子热运动能量大于声子能量时,电子和晶格热运动加剧,更多的声子被激发.极化子的基态能量随温度的升高而增大.     

声子和温度对球型量子点中极化子性质的影响

采用求解能量本征方程、幺正变换及变分相结合的方法,研究声子和温度对球型量子点中极化子性质的影响。数值计算表明,声子效应导致极化子的基态能量低于电子能量,且极化子基态能量随电子—声子耦合强度的增大而降低。数值计算还表明,温度较低时,声子不会被激发,极化子的基态能量不随温度而变;温度较高时,声子会被激发,导致极化子能量随温度升高而增大。     

Modeling of gain and phase dynamics in quantum dot amplifiers

By means of an electron hole rate equation model we explain the phase dynamics of a quantum dot semiconductor optical amplifier and the appearance of different decay times observed in pump and probe experiments. The ultrafast hole relaxation leads to a first ultrafast recovery of the gain, followed by electron relaxation and, in the nanosecond timescale, radiative and non-radiative recombinations. The phase dynamics is slower and is affected by thermal redistribution of carriers within the dot. We explain the ultrafast response of quantum dot amplifiers as an effect of hole escape and recombination without the need to assume Auger processes.     

球型量子点中的电子拉曼散射

研究了球型半导体量子点中的电子拉曼散射.讨论了初态为导带全满,价带全空时的电子跃迁过程,给出了电子拉曼散射的跃迁选择定则。通过计算GaAs和CdS材料球型量子点中电子及空穴参与拉曼散射的微分散射截面,分别比较了电子和空穴的不同影响,发现电子对拉曼散射的贡献要远大于空穴的贡献;当选取不同量子点半径时,拉曼散射微分散射截面变化也非常明显;量子点尺寸不变的条件下,改变入射光子能量,可以发现,微分散射截面随入射光子能量增大而减小。     

The effect of the long-range order in a quantum dot array on the in-plane lattice thermal conductivity

Semiconductor quantum dot superlattices consisting of arrays of quantum dots have shown great promise for a variety of device applications, including thermoelectric power generation and cooling. In this paper we theoretically investigate the effect of long-range order in a quantum dot array on its in-plane lattice thermal conductivity. It is demonstrated that the long-range order in a quantum dot array enhances acoustic phonon scattering and, thus leads to a decrease of its lattice thermal conductivity. The decrease in the ordered quantum dot array, which acts as a phonon grating, is stronger than that in the disordered one due to the contribution of the coherent scattering term. The numerical calculations were carried out for a structure that consists of multiple layers of Si with layers of ordered Ge quantum dots separated by wetting layers and spacers.     

Microscopic theory of Auger recombination in quantum wires

An analysis is made of mechanisms for Auger recombination of nonequilibrium carriers in cylindrical quantum wires. It is shown that two different Auger recombination mechanisms take place in these wires: a quasi-threshold and a nonthreshold mechanism. Both mechanisms are associated with the presence of heterobarriers but are of a different nature. The quasi-threshold mechanism is attributed to the spatial confinement of the carrier wave functions to the region of the quantum wire and in this case the quasi-momentum conservation law is violated and the Auger recombination process is intensified. As the radius of the wire increases, the quasi-threshold Auger recombination process goes over to a threshold process. The nonthreshold mechanism is caused by the scattering of an electron (hole) at the heterojunction; the rate of this nonthreshold Auger recombination tends to zero in the limit of an infinite-radius wire.     

Rabi oscillation damped by exciton leakage and Auger capture in quantum dots

The decoherence of Rabi oscillation (RO) caused by biexciton, population leakage to the wetting layer (WL), and Auger capture in semiconductor quantum dots is theoretically analyzed with multilevel optical Bloch equations. The corresponding effects on the quality factor of RO are also discussed. We have found that the biexciton effect is relatively trifling, as the pulse duration is longer than 5 ps. The population leakage to the WL leads to a decrease of the RO average even though the damping rate is similar to that observed in the experiment. Auger capture in quantum dots results in RO damping that is consistent with the experimental data, which implies that Auger capture is an important decoherence process in quantum dots.     

量子点中浅施主的能谱结构

在有效质量近似下，使用线性变分方法计算了处于ＧａＡｓ－Ｇａ_１－ｘＡｌ_ｘＡs球形量子点中不同位置的浅施主杂质的能谱结构，讨论了能级的简并度和不同情况下的能级序，扩展了文献［１０］中所得到的结果。计算结果表明电子结构明显地依赖于量子点的半径和杂质离子所处的位置。计算结果还说明选择合适的基函数对于讨论量子点中问题的重要性。 关键词：     

Lifetime of resonant state in a spherical quantum dot

This paper calculates the lifetime of resonant state and transmission probability of a single electron tunnelling in a spherical quantum dot (SQD) structure by using the transfer matrix technique. In the SQD, the electron is confined both transversally and longitudinally, the motion in the transverse and longitudinal directions is separated by using the adiabatic approximation theory. Meanwhile, the energy levels of the former are considered as the effective confining potential. The numerical calculations are carried out for the SQD consisting of GaAs/InAs material. The obtained results show that the bigger radius of the quantum dot not only leads significantly to the shifts of resonant peaks toward the low-energy region, but also causes the lengthening of the lifetime of resonant state. The lifetime of resonant state can be calculated from the uncertainty principle between the energy half width and lifetime.     

球型量子点量子比特的声子退相干效应

采用求解能量本征方程、幺正变换及变分相结合的方法,研究声子效应对球型量子点中电子-声子系（极化子）能量、量子比特性质的影响。数值计算表明,能量随量子点尺寸的增大而减小,说明量子点具有明显的量子尺寸效应;当考虑声子效应时,能量、量子比特的振荡周期均减小,说明声子效应使得量子比特的相干性减弱;且量子比特内各空间点的概率密度均随时间做周期性振荡,不同空间点的概率密度随径向坐标和角坐标的变化而变化。     

球型量子点量子比特的声子退相干效应

采用求解能量本征方程、幺正变换及变分相结合的方法,研究声子效应对球型量子点中电子-声子系（极化子）能量、量子比特性质的影响。数值计算表明,能量随量子点尺寸的增大而减小,说明量子点具有明显的量子尺寸效应;当考虑声子效应时,能量、量子比特的振荡周期均减小,说明声子效应使得量子比特的相干性减弱;且量子比特内各空间点的概率密度均随时间做周期性振荡,不同空间点的概率密度随径向坐标和角坐标的变化而变化。     

A Negative Donor Center Trapped by a Spherical Quantum Dot

The properties of the low-lying states of a negative donor center trapped by a spherical quantum dot, which is subjected to a parabolic potential confinement, are investigated in the absence of magnetic field. The calculations have been performed by means of the exact diagonalization of the Hamiltonian matrix within the effective-mass approximation. We find that there is only one bound state the D^- center in a spherical parabolic quantum dot in the absence of magnetic field. The binding energy of the ground state is obtained as a function of the dot size. Moreover, the critical confined potential radius value at which the negative donor center changes from unbound to bound is obtained.     

Spin-dependent transport through quantum dot with inelastic interactions

Using the Keldysh nonequilibrium Green function method, we theoretically investigate the electron transport properties of a quantum dot coupled to two ferromagnetic electrodes, with inelastic electron-phonon interaction and spin flip scattering present in the quantum dot. It is found that the electron-phonon interaction reduces the current, induces new satellite polaronic peaks in the differential conductance spectrum, and at the same time leads to oscillatory tunneling magnetoresistance effect. Spin flip scattering suppresses the zero-bias conductance peak and splits it into two, with different behaviors for parallel and anti-parallel magnetic configuration of the two electrodes. Consequently, a negative tunneling magnetoresistance effect may occur in the resonant tunneling region, with increasing spin flip scattering rate.     

Electron–hole transition energy for a spherical quantum dot confined in a nano-cylindrical wire

A single-band constant confining potential is applied to InAs spherical quantum dot confined in a GaAs cylindrical nano-wire to determine the electronic structure. The energy eigenvalues and transition energies are numerically calculated as a function of the dot radius. The calculations were performed within the effective mass approximation, using the finite element method. The effect of both spherical and cylindrical confinement, the size dependence of the ground and first excited state energies for electron and heavy hole and transition energies are reported and compared with experimental and theoretical results in relevant conditions.     

Pressure-induced threshold optical pump intensity in a CdTe/ZnTe quantum dot

Pressure-induced binding energies of an exciton and a biexciton are studied taking into account the geometrical confinement effect in a CdTe/ZnTe quantum dot. Coulomb interaction energy is obtained using Hartree potential. The energy eigenvalue and wave functions of exciton and the biexciton are obtained using the self-consistent technique. The effective mass approximation and BenDaniel-Duke boundary conditions are used in the self-consistent calculations. The pressure-induced nonlinear optical absorption coefficients for the heavy hole exciton and the biexciton as a function of incident photon energy for CdTe/ZnTe quantum dot are investigated. The optical gain coefficient with the injection current density, in the presence of various hydrostatic pressure values, is studied in a CdTe/ZnTe spherical quantum dot. The pressure-induced threshold optical pump intensity with the dot radius is investigated. The results show that the pressure-induced electronic and optical properties strongly depend on the spatial confinement effect.