Thermally-induced structural and electrical effects in GeTe-based amorphous alloys

The thermal, structural electrical properties of bulk glasses based on GeTe compositions near the binary eutectic, Ge₁₅Te₈₅, are studied. Information regarding the non-crystalline state and the transformation from the non-crystalline to the crystalline state is reported. The particular alloys studied represent binary (Ge₁₇Te₈₃), ternary (Ge₁₅Te₈₀As₅) and quaternary (Ge₁₅Te₈₁Sb₂S₂) compositions. Structural information is obtained using X-ray diffraction techniques and density measurements. Thermal data are reported from differential scanning calorimetry (DSC), thermogravimetry (TGA) and mass spectrometry results. The electrical conductivity is measured as a function of temperature and, on the ‘as-prepared’ glasses, shows semi-conducting behavior with activation energies, E, of 0.43–0.48 eV. DSC, TGA and X-ray powder diffraction patterns indicate the samples crystallize as Te and GeTe in a two-step process, and melt at the binary eutectic temperature. The binary vaporizes as Te and GeTe in a two-step process. GeTeAs and GeTeSbS vaporize by essentially the same mechanism, with As evaporating (<300°C) before the Te, and Sb and S evaporating (420–480°C) after the Te but before GeTe. The results show that the properties of the bulk ‘as-prepared’ glasses are strikingly similar. Thermally-induced changes in the structural and electrical properties of bulk samples have been examined following a series of anneals (5 h, vacuum) at temperatures from 111°C to 190°C (glass transition temperature $\text{?125?133°}\text{C}$; crystallization temperature $\text{?206?228°}\text{C}$ as determined by DSC). DSC, TGA and mass spectrometry results have been correlated to electrical and structural changes. Results show that crystalline Te nucleates at the surface and forms a conductive surface layer. The conductivity of this surface layer is nearly temperature independent with E ≈ 10^?2 eV for all three alloys. Crystallization and the associated electrically conductive regions extend into the bulk material with further annealing. In these disordered alloys the additives As and Sb + S apparently do not act as electrical dopants in the sense of affecting the conductivity activation energy. The additives Sb + S however do retard crystallization of GeTe. The secondary crystallization product, GeTe, apparently changes the conduction mechanism to either a metallic or degenerate semiconductor type behavior.     

Relation between electrical and optical gaps of amorphous semiconductors in the SiAsTe system

Electrical and optical properties of semiconducting SiAsTe glasses have been investigated. Compositional dependences of the properties in the Si_xAs_yTe_z system are examined as a function of atomic percentage x (or y, z) of one element with parameters of constant atomic ratio y/z (or x/z, x/y) of the other two elements. A pre-exponential factor σ₀ in the dc conductivity formula is estimated to be $\text{(2.1 ± 0.6) × 10}{}^4\text{(Ω ·}\text{cm}\text{)}{}^{\mathrm{?1}}$, inependently of the compositions. A systematic relationship between the compositional changes in the electrical gap E_g(el) and optical gap E_g(op) has been found. The energy gaps increase linearly with increasing Si content and decreasing Te content, but are almost independent of As content. The relation between E_g(el) and E_g(op) is expressed by E_g(el) = 1.60 E_g(op) ? 0.15 in eV. On the other hand, the optical absorption coefficient α(Ω) near the band edge follows the empirical formula, $\text{α(Ω) = α}{}_0$ exp ($\text{h}\text{?}\text{Ω/E}{}_{\mathrm{<mtext>s</mtext>}}$). The experimentally determined factor E_s increases linearly with E_g(op) and is closely related to the energy difference between the two gaps. A tentative model to explain these experimental results is proposed by taking into account of the effect of the potential fluctuations in such disordered materials.     

Electrical and optical properties of the AsTeIn and GeSeIn chalcogenide systems

The influence of indium on the optical and properties of As_2−xTe_3−xxIn_2x, As_20−xTe_80−xIn_2x and Ge_20−xSe_80−xIn_2x is described. In Te-containing glasses the Fermi level is shifted by 0.05 eV and in Se-containing glasses by 0.2 eV towards the valence band.     

Effects of post-annealing temperature on structural,optical, and electrical properties of MgxZn1−xO films by RF magnetron sputtering

Mg_xZn_1?xO thin films were deposited on quartz substrates by RF magnetron sputtering. The effect of post-annealing temperature on structural, optical, and electrical properties was investigated with the annealing temperatures increasing from 450 to 750 °C. The crystallinity of Mg_xZn_1?xO film annealed at 650 °C was significantly improved while the film annealed at 750 °C showed little improvement. The electrical properties degraded with the increase of annealing temperature. The annealing temperature seemed to impact the E_g value of Mg_xZn_1?xO thin films because of the variation of carrier concentration.     

The study of transformation kinetics of the amorphous PdSi alloys

The kinetics of transformation behavior of roller-quenched amorphous Pd₈₃Si₁₇ and Pd₈₀Si₂₀ alloys after linear and isothermal heating is reported. The transformation was examined with electron microscopy, electron diffraction and electrical resistivity measurement. The crystallization of amorphous alloys with 17 at% Si begins with metastable ordered fcc solid solution. The ordered fcc solution is transformed to a ordered metastable phase with, probably, orthorhombic structure. The crystallization of amorphous alloys with 20 at% Si begins by formation of spherulites with lamellar structure. Using electron diffraction we found that spherulites consist of two phases - orthorhombic Pd₃Si silicide and Pd-rich silicide. From resistivity measurements, activation energies of 28.5 kcal/mol for Pd₈₃Si₁₇ and 80 kcal/mol for Pd₈₀Si₂₀, respectively, were calculated.     

Effect of tellurium deposition rate on the properties of Cu–In–Te based thin films and solar cells

To investigate the effects of tellurium (Te) deposition rate on the properties of Cu–In–Te based thin films (Cu/In=0.30–0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn₃Te₅ phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn₃Te₅ thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm²) efficiency of 4.4% (V_oc=309 mV, J_sc=28.0 mA/cm², and FF=0.509) without light soaking.     

Effects of post-annealing on electrical properties of amorphous Ga-doped Zn–Sn–O semiconductor films

We investigated the effect of post-annealing on the electrical properties of amorphous gallium-zinc-tin oxide (a-GZTO) films with different Ga contents. The films were deposited at room temperature by sputtering and annealed in air for 1 h. It was found that the doping with Ga, which acts as the carrier suppressor, contributes to the thermal stability of characteristic properties of a-GZTO thin films. The film with a small amount of Ga showed significant variations in carrier concentration according to the annealing temperature. Increases in carrier concentration and mobility can be ascribed to the reduction of subgap density of states by annealing. After annealing at 400 °C, however, the enrichment of Zn cations in surface region resulted in considerable changes in chemical bonding states and consequently, the carrier concentration decreased by two orders of magnitude for the low Ga-doped ZTO film.     

Acoustic study of low-energy activation processes in amorphous Se,Ge and SeGe compounds

The study of the elastic properties of amorphous selenium over a wide range of frequency (30 kHz−100 MHz) reveal a single internal friction peak below the glass transition temperature.This one involves low activation energies ranging down to very small values and is reduced when the chains are crosslinked. In amorphous germanium, there is no evidence for the existence of activation processes exhibiting very small values. We suggest that the underlying microscopic mechanisms responsible for the peak in a-Se are closely related to the polymeric structure and so should exist in any amorphous polymers. We also suggest that the numerous other peaks existing in most polymers are not intrinsically related to structure in chains.     

Effect of germanium on the microstructure and the magnetic properties of Fe–B–Si amorphous alloys

In this work, we present a systematic study on the crystallization kinetics and the magnetic properties of melt-spun Fe₈₀B₁₀Si_10 ? xGe_x (x = 0.0 ? 10.0) amorphous alloys. The activation energy for crystallization, determined by differential scanning calorimetry, displayed a strong dependence on the Ge content, reflecting a deleterious effect on the alloys' thermal stability and their glass forming ability with increasing Ge concentration. On the other hand, the alloys exhibited excellent soft magnetic properties, i.e., high saturation magnetization values (around 1.60 T), alongside Curie temperatures of up to 600 K. Complementary, for increasing Ge substitution, the ferromagnetic resonance spectra showed a microstructural evolution comprising at least two different magnetic phases corresponding to a majority amorphous matrix and to Fe(Si, Ge) nanocrystallites for x ≥ 7.5.     

Effect of laser irradiation on thermal and optical properties of selenium–tellurium alloy

The crystallization parameters such as glass transition temperature (T_g), onset crystallization temperature (T_c), peak crystallization temperature (T_p) and enthalpy released (ΔH_C) of the bulk Se–Te chalcogenide glass has been studied by using Differential Scanning Calorimeter (DSC), under non-isothermal condition at a heating rate of 20 K/min. The values of T_g, T_c, T_p and ΔH_C with and without laser irradiation for different exposure time have been studied. The optical absorption of pristine and laser irradiated thermally evaporated Se–Te films has been measured. The films shows indirect allowed interband transition that is influenced by the laser irradiation. The optical energy gap has been found to decrease from 1.61 to 1.38 eV with increasing irradiation time from 5 to 20 min. The results have been analyzed on the basis of laser irradiation-induced defects in the film.     

Determination of mechanical, electrical and thermal properties of the Sn―Bi―Zn ternary alloy

The development of lead-free solders has emerged as one of the key issues in the electronics packaging industries. Sn―Zn―Bi eutectic alloy has been considered as one of the lead-free solder materials that can replace the toxic Pb―Sn eutectic solder without increasing soldering temperature. This study investigates the effect of temperature gradient and growth rate on the mechanical, electrical and thermal properties of the Sn―Zn―Bi eutectic alloy. Sn-23 wt.% Bi-5 wt.% Zn alloy was directionally solidified upward with different growth rates (V = 8.3-478.6 μm/s) at a constant temperature gradient (G = 3.99 K/mm) and with different temperature gradients (G = 1.78-3.99 K/mm) at a constant growth rate (V = 8.3 μm/s) in the Bridgman-type growth apparatus. The microhardness (HV), tensile stress (σ_t) and compressive stress (σ_c) were measured from directionally solidified samples. The dependency of the HV, σ_t and σ_c for directionally solidified Sn-23 wt.% Bi-5 wt.% Zn alloy on the solidification parameters (G, V) were investigated and the relationships between them were obtained by using regression analysis. According to present results, HV, σ_t and σ_c of directionally solidified Sn-23 wt.% Bi-5 wt.% Zn alloy increase with increasing G and V. Variations of electrical resistivity (ρ) for cast samples with the temperature in the range of 300-420 K were also measured by using a standard dc four-point probe technique. The enthalpy of fusion (ΔH) and specific heat (C_p) for same alloy was also determined by means of differential scanning calorimeter (DSC) from heating trace during the transformation from eutectic liquid to eutectic solid.     

Influence of γ irradiation on the optical and mechanical properties of langasite

The optical (transmission and circular dichroism) spectra and mechanical (Vickers microhardness and fracture toughness K _1c ) properties of langasite La₃Ga₅SiO₁₄ crystals have been studied after γ irradiation and exposure for a month. It is shown that, as a result of irradiation crystals become more transparent in the range 310–640 nm, nonstructural defects with the energies of excited states in the range 2.06–4.13 eV decay and new structural defects with the excited-state energies in the range 4.14–5.00 eV are formed. Irradiation does not lead to a change in microhardness, while the coefficient K _1c increases from 0.32 to 0.36 MPa m^1/2.     

Nanophase separation and effects on properties of Ge–As–Se chalcogenide glasses

Nanophase separation in the bulk Ge–As–Se chalcogenide glasses was observed by SEM and supported by XRD and IR measurements. Effects of nanophase separation on glass transition temperature (T_g), microhardness (H_v), optical band gap (E_opt) and thermal expansion coefficient (α) were investigated in terms of glass rigidity transitions. According to the correlations between the properties and average coordination number Z, it is established that nanophase separation becomes more intensive when Z is larger than 2.64.     

Nanocrystallization effects on the specific heat of Fe–Co–Nb–B amorphous alloy

Specific heat at constant pressure, C_P, was measured on amorphous, nanocrystalline and fully crystalline samples of Fe₆₀Co₁₈Nb₆B₁₆ alloy. Magnetic and calorimetric measurements agree, describing a continuously decreasing Curie temperature of the amorphous phase. A clear enhancement of C_P over the Dulong–Pettit limit has been observed (from 14% to 25 %). Part of the enhancement is due to magnetic (mainly amorphous phase) and electronic contributions, although an excess volume can be inferred from the high value of the slope of C_P versus temperature.     

Dependence of the surface topology and raman scattering spectra of Ge x Si1−x /Si films on the composition variation over the layer thickness

The surface topology and Raman scattering spectra of Ge _x Si_{1 ? x} /Si(100) films are investigated in dependence of the composition variation over the film thickness. It is shown that the character of the Ge content variation in the Ge _x Si_{1 ? x} alloy at the constant cumulative Ge fraction in the film (x _int = 0.5) affects the surface morphology of the grown Ge _x Si_{1 ? x} /Si layer. The heterostructures were grown by molecular-beam epitaxy.     

Glass formation and properties of chalcogenide systems XVIII. On glass formation in the system GePbSeTe

The glass formation range of the system GePbSeTe has been investigated. For selected series properties such as the mole volume, glass transition temperature and the electrical direct current conductivity are discussed with respect to their dependence on composition. For some series the results can be compared with the properties of glasses containing Sn instead of Pb. The change in the energy gap for the crystalline compounds SnSe, SnTe, PbSe and PbTe is reflected by the data of the Sn or Pb containing glasses.     

Influence of Ta,Y substitutions on the thermal stability,microhardness and magnetic properties of melt spun Fe–B–Si amorphous alloys

In the present research work, thermal stability, magnetic properties and microhardness of Fe₇₂B_19.2Si_4.8M₄ (M = Ta or Y) amorphous ribbons obtained by chill block melt-spinning technique are reported. The crystallization temperatures resulted as high as 1129 K (for M = Ta) and of 1167 K (for M = Y), which indicate a considerable thermal stability for both alloys. On the other hand, the saturation polarization (μ₀M_s) together with the Curie temperature (T_c) also showed excellent combination of values, with 0.95 ± 0.12 T and 586 ± 8 K, respectively (for the Ta-containing alloy) and of 1.55 ± 0.18 T and 698 ± 6 K, respectively (for the Y-containing alloy). Additionally, the Vickers microhardness exhibited values over 1100 kg/mm² for both alloys.     

The effects of electrode materials on the switching behaviour of the amorphous semiconductors Si12Ge10As30Te48

The switching behaviour of the amorphous chalcogenide alloy Si₁₂Ge₁₀As₃₀Te₄₈ has been systematically investigated using silver, indium, aluminum, and graphite for electrodes. The experimental results show that the stability in both the threshold voltage for the onset of switching action, and the holding current required to maintain the conducting state, depends strongly on electrode materials. The switching mechanisms related to the electrical and thermal properties of various electrode materials are discussed, and experimental evidence of the deteriorating effect of some electrode materials is given.     

X-Ray diffraction study of the evolution of phase and structural state and macroscopic stress during annealing of soft magnetic Fe95 − x Zr5N x films prepared by ion-plasma deposition

The evolution of the phase composition, nanostructure parameters, and macroscopic stress in soft magnetic Fe_{95 ? x} Zr₅N _x films (prepared by ion-plasma deposition onto quartz substrates) during their annealing has been investigated by X-ray diffraction. During deposition, depending on the N content, either a mixed structure composed of an X-ray amorphous phase enriched in Zr and N and a crystalline phase (α-Fe(N) solid solution) or an X-ray amorphous phase enriched in Fe, Zr, and N is formed in the films. During annealing, depending on the temperature and nitrogen content, different combinations of crystalline phases (α-Fe(N) and Zr(N) solid solutions, α-Fe, Fe₄N, Fe₂N, ZrO₂) are formed in the films. The large compressive stress formed in the films during deposition changes to a lower tensile stress during annealing.