Photoreflectance of GaAs doping superlattices

We have performed room-temperature photoreflectance measurements on two GaAs doping superlattices having considerably different built-in potentials (1.2 eV and 85 meV). The first sample exhibits Franz-Keldysh oscillations, the period of the oscillations corresponding to the . A second dc pump beam has been used to change the electron-hole concentration and hence the built-in field. The spectrum of the second sample displays a number of features corresponding to quantized electron and hole states. There is qualitative agreement between experiment and theoretical calculation based on a two-band tight-binding model. In both samples the dependence of the amplitude of the photoreflectance signal on pump chopping frequency yields the minority carrier lifetime.     

Above-barrier excitons: First magnetooptic investigation

An above-barrier localized excitonic state in a Bragg confining semiconductor superstructure based on an (In, Ga)As/GaAs heterosystem is observed experimentally. A sharp excitonic resonance corresponding to the interference mechanism of localization is observed in the absorption spectrum of this structure at 1.548 eV, i.e., 33 meV above the energy of a bulk exciton in GaAs. The oscillator strength of the above-barrier exciton is twice that of the main excitonic state in the system, and the above-barrier exciton gives rise to sharp Landau oscillations in the magnetoabsorption spectra. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 10, 727–732 (25 May 1999)     

Accumulation layer and interface effects in doped nonabrupt GaAs/AlxGa1 − xAs single quantum wells

The electron energy levels in doped nonabrupt GaAs/Al_xGa_1 − xAs single quantum wells 100 Å wide are calculated. Interface widths varying from zero to four GaAs unit cells are taken into account, as well as band bendings of 0–90 meV. It is shown that interface effects on the energy levels are important and sensitive to the level of doping. When interfaces of only two GaAs unit cells and a band bending of 40 meV are considered, the ground-state (first excited state) energy level shifts toward energies as high as 4 meV (20 meV).     

Low temperature photoluminescence study of Ga As defect states

Low temperature(77 K)photoluminescence measurements have been performed on different GaAs substrates to evaluate the GaAs crystal quality.Several defect-related luminescence peaks have been observed,including 1.452 eV,1.476 eV,1.326 eV peaks deriving from 78 meV Ga_(As) antisite defects,and 1.372 eV,1.289 eV peaks resulting from As vacancy related defects.Changes in photoluminescence emission intensity and emission energy as a function of temperature and excitation power lead to the identification of the defect states.The luminescence mechanisms of the defect states were studied by photoluminescence spectroscopy and the growth quality of GaAs crystal was evaluated.     

Fine structure splitting and biexciton binding energy in single self-assembled InAs/AlAs quantum dots

We report on photoluminescence investigations of individual InAs quantum dots embedded in an AlAs matrix which emit in the visible region, in contrast to the more traditional InAs/GaAs system. Biexciton binding energies, considerably larger than for InAs/GaAs dots, up to 9 meV are observed. The biexciton binding energy decreases with decreasing dot size, reflecting a possible crossover to an antibinding regime. Exciton and biexciton emission consists of linearly cross polarized doublets due to a large fine structure splitting up to 0.3 meV of the bright exciton state. With increasing exciton transition energy the fine structure splitting decreases down to zero at about 1.63 eV. Differences with InAs/GaAs QDs may be attributed to major dot shape anisotropy and/or larger confinement due to higher AlAs barriers.     

The effect of fast neutron irradiation on the optical modulation spectra of GaAs

The electroreflectance and wavelength-modulated reflectance spectra of GaAs were measured before and after several reactor irradiation periods. High resistivity n type GaAs crystals were irradiated at a temperature between 300 and 310 K up to a fast neutron fluence of 3.3 × 10¹⁷n/cm². The E₀ and E₀+Δ_o peaks shift nonlinearly toward lower energy, the change reaching a maximum value of about ? 50 meV at 10¹⁷n/cm². At this fluence an additional peak appears at 1.33 eV. The E₁ and E₁+Δ₁ peaks move almost linearly toward higher energy with increasing fast neutron fluence, the shift being about + 25 meV at 2 × 10¹⁷n/cm². The results are discussed taking into account infrared absorption measurements and the calculations made by McNichols, Hayes and Ginell concerning the metallic GaAs precipitates. The effect of possible internal stress produced by the fast neutron bombardment on the modulation spectra is also discussed.     

Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure

Self‐standing III–V nanowires (NWs) are promising building blocks for future optoelectronic devices such as LEDs, lasers, photodetectors and solar cells. In this work, we present the results of low temperature photoluminescence (PL) characterization of GaAs NWs grown by Au‐assisted molecular beam epitaxy (MBE), coupled with the transmission electron microscopy (TEM) structural analysis. PL spectra contain exci‐ ton peaks from zincblende (ZB) and wurtzite (WZ) crystal structures of GaAs. The peaks are influenced by the quantum confinement effects. PL bands corresponding to the exciton emission from ZB and WZ crystal phases are identified, relating to the PL peaks at 1.519 eV and 1.478 eV, respectively. The obtained red shift of 41 meV for WZ GaAs should persist in thin NWs as well as in bulk materials. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence of thermally treated n+ Si-doped and semi-insulating Cr-doped GaAs substrates

Photoluminescence measurements are used to investigate the nature of the surface layers formed on n⁺ Si-doped and semi-insulating Cr-doped GaAs substrates after heat-treatment at 780–830°C in H₂ or He flow. At 5.5 K the heat-treated n⁺ substrates exhibit a band near 1.44 eV while the semi-insulating substrates are characterized by a phonon assisted transition with the zero-phonon band at 1.41 eV. Both these bands are identified with donor-acceptor pair recombination. The ionization energy of both the donor and acceptor for the 1.44 eV band is estimated to be ～ 35–40 meV and it is suggested that the acceptor is Si_As. The identities of the donor in the 1.44 eV band as well as that of the centers responsible for the emission at 1.41 eV are unknown.     

Evidence for two energy levels associated with EL2 trap in GaAs

By photocapacitance technique, applied to n-type LEC-grown GaAs, two energy levels:E _v +0.45 eV andE _c –0.75 eV are identified, for the first time, as being associated with the EL2 trap. As follows from the analysis of photo-EPR results on highly resistive GaAs crystals, the same energy levels can be attributed to the arsenic antisite defect, As_GA. In view of these findings, it is argued that the occupied EL2 level corresponds to the neutral charge state of As_Ga defect.     

InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source

Lattice-matched InGaP epilayers on GaAs (001) and InGaP/GaAs heterojunction bipolar transistors (HBTs) were successfully grown by solid-source molecular beam epitaxy (SSMBE) with a GaP decomposition source. A 3 μm thick InGaP epilayer shows that low temperature photoluminescence (PL) peak energy is as large as 1.998 eV, full width at half maximum (FWHM) is 5.26 meV, which is the smallest ever reported, and X-ray diffraction (XRD) rocking curve linewidth is as narrow as that of GaAs substrate. The electron mobilities at room temperature of nominally undoped InGaP layers obtained by Hall measurements are comparable to similar InGaP epilayer grown by solid-source molecular beam epitaxy (SSMBE) with other sources or other growth techniques. The large area InGaP/GaAs HBTs show very good Dc characteristics.     

Study of acceptor states in CdTe by donor-acceptor pair excitation luminescence

Excitation of donor-acceptor pair luminescence has been studied in CdTe doped with lithium or chlorine. The excitation spectrum of the lithium acceptor is determined and fitted with the effective mass theory of Baldereschi and Lipari. Revised values of the valence band parameters are deduced: μ = 0.8, δ = 0.054, Ry = 24 meV. The analysis of the 1.45 eV luminescence band in compensated Cl-doped crystals shows the existence of donor-acceptor pair transitions. Three acceptor centers are identified: E_A = 89, 111 and 119 meV, and the contribution of a deep donor (E_D > 40 meV) is demonstrated. Besides intracentre type excitation transitions of the 1.45 eV band have been observed in non-compensated chlorine-doped crystals. Thus several recombination channels and distinct acceptor states contribute to the composite 1.45 eV luminescence band.     

In/GaAs(111)界面形成过程的电子能谱研究

用光电子能谱结合LEED图样分析的方法研究了In在非解理的GaAs(111)面上的界面形成过程。观察到在这一过程中三维In集团的生长起支配作用。发现对于所有研究过的n型样品,包括Ga终止的GaAs(111)-A面和As终止的GaAs(111)-B面,淀积In之前的表面费密能级均在VBM上面0.75±0.05eV处,在淀积过程中迅速移至VBM上面0.90±0.05eV处。 关键词：     

Identification of Cu and Ag acceptors in CdTe

We report here on the identification of the two dominant acceptor levels in high purity p type CdTe, with Cu and Ag on Cd site. This identification is based on back doping experiments coupled with electrical measurements and photoluminescence studies. Cu and Ag can form easily complex centers when a supersaturation is achieved. The way of obtained good doping without complexation, is explained. The principal bound exciton lines are at 1,5896 eV (Cu) and at 1,5885 eV (Ag). The precise hole binding energies obtained from optical data are E_A (Cu) = 146 meV and E_A (Ag) = 108 meV.     

Oscillatory photoconductivity of gallium arsenide

The photoconductivity of GaAs in the energy range 1.5 –1.8 eV at 4.2 K exhibits two types of quantum oscillations: Landau oscillations for epitaxial material in high magnetic fields or LO phonon oscillations for high resistivity material. The purity and surface treatment of the samples seem to determine the type of oscillations observed.     

Recombination of U 92 + ions with electrons

Recombination of fully stripped U⁹²⁺ ions with electrons has been investigated at the Experimental Storage Ring (ESR) in Darmstadt. Absolute recombination rate coefficients have been measured for relative energies from 0 to 33 eV. For energies greater than 20 meV the experimental result is well described by the theory for radiative recombination (RR). Below 20 meV the experimental rate increasingly exceeds the RR calculation as observed previously in the recombination of light bare ions as well as of Bi⁸³⁺. This low-energy rate enhancement is shown to scale as Z^2.6 for bare ions, where Z is the atomic number of the ion. The U⁹²⁺ recombination rate enhancement is insensitive to changes of the electron density. Variation of the magnetic guiding field strength from 80 mT to 120 mT resulted in oscillations of the recombination rate at 0 eV. The oscillations are partly attributed to changes of the transverse electron temperature accompanying the change of the magnetic guiding field strength; partly they may be caused by uncompensated small changes of the interaction angle between the two beams. Received 1st March 2001 and Received in final form 20 April 2001     

Photoluminescence measurements of the 1.55 eV band of Ge doped AℓxGa1−xAs

The photoluminescence of the 1.55 eV band of Ge doped A?_xGa_1?xAs, with x=0.30–0.33, grown by liquid phase epitaxy is presented. The broad shape was found to be due to a lattice relaxation upon optical transitions. Resonant modes with ?ω_q = 35±2 meV and ?ω_q = 45±2 meV are found for the optical band, yielding a zero phonon transition energy = 1.73±0.02 eV and a Franck-Condon shift = 0.17–0.20 eV for the optical center. The activation energy of thermal quenching yields an associated donnor binding energy of 0.17±0.04 eV. Possible mechanisms for the radiative transitions are discussed.     

Electronic structure of the LPE grown semiconductor,p-ZnSnAs2, explored by newly-observed laser-excited photoluminescence

Radiative recombination phenomena are reported for the first time for ZnSnAs₂. The specimens are of (112) growth on (111) GaAs and (004) growth on (100) GaAs, the substrates bring semi-insulating. Measurements of photoluminescence (PL) band widths, band energies, and intensities at several excitation power density levels and several temperatures between 5 and 200 K lead to a donor-acceptor pairing assignment for the ca. 0.6 eV PL bands. The agreement between the calculated activation energy within the effective mass approximation and that observed experimentally is consistent with the identification of a shallow acceptor center at 25 ± 5 meV in both (112) and (004) ZnSnAs₂. The data also indicate that the ZnSnAs₂ has a deep donor center in each of the directional growth types. Finally, (112) ZnSnAs₂ on (111) GaAs was found to grow more homogeneously than (004) on (100) GaAs.     

Bose condensation of interwell excitons in double quantum wells

The luminescence of interwell excitons in double quantum wells GaAs/AlGaAs (n-i-n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied. The properties of excitons whose photoexcited electron and hole are spatially separated in the neighboring quantum wells were studied as functions of density and temperature within the domains on the scale less than one micron. For this purpose, the surfaces of the samples were coated with a metallic mask containing specially prepared holes (windows) of a micron size an less for the photoexcitation and observation of luminescence. For weak pumping (less than 50 μW), the interwell excitons are strongly localized because of small-scale fluctuations of a random potential, and the corresponding photoluminescence line is inhomogeneously broadened (up to 2.5 meV). As the resonant excitation power increases, the line due to the delocalized excitons arises in a thresholdlike manner, after which its intensity linearly increases with increasing pump power, narrows (the smallest width is 350 μeV), and undergoes a shift (of about 0.5 μeV) to lower energies, in accordance with the filling of the lowest state in the domain. With a rise in temperature, this line disappears from the spectrum (T _c ≤ 3.4 K). The observed phenomenon is attributed to Bose-Einstein condensation in a quasi-two-dimensional system of interwell excitons. In the temperature range studied (1.5–3.4 K), the critical exciton density and temperature increase almost linearly with temperature.     

Coulomb oscillations of the current through spin-nondegenerate <Emphasis Type="Italic">p</Emphasis> states of InAs quantum dots

The electron transport is studied in split-gate structures fabricated on the basis of a modulation-doped heterostructure that contains a single quantum well and self-assembled InAs quantum dots near the 2D electron gas regions. The current passing through the channel with a denumerable set of InAs quantum dots is found to exhibit Coulomb oscillations as a function of the gate voltage. The oscillations are associated with the excited p states of InAs quantum dots, which are characterized by opposite spins and caused by lifting of the spin degeneracy of the p state due to the Coulomb interaction. The Coulomb oscillations of the current are observed up to a temperature of ～20 K. The Coulomb energy is found to be ΔE_c = 12.5 meV, which agrees well with the theoretical estimates for the p states of quantum dots in the structures under study.     

砷化镓光电阴极光谱响应与吸收率关系分析

为了研究砷化镓(GaAs)光电阴极光谱响应与吸收率曲线间的关系,采用分子束外延法(MBE)和金属有机化合物化学气相沉积法(MOCVD)制备了两类GaAs光电阴极,并测试得到了样品吸收率和光谱响应实验曲线.对每个样品的这两条曲线在同一坐标系中做最大值归一化处理,将归一的光谱响应曲线与归一的吸收率曲线做除法,得到了类似光电阴极表面势垒的形状.结果表明,两种方法制备的光电阴极光谱响应曲线相比吸收率曲线都发生了红移,MBE样品偏移量稍大于MOCVD样品.短波吸收率不截止,光谱响应截止于500 nm左右;可见光波段上,光谱响应曲线的峰值位置相比吸收率曲线红移了几百meV;近红外区域,光谱响应曲线的截止位置相比吸收率曲线红移了几个meV.MOCVD样品中杂质对带隙的影响更小,光谱响应相比吸收率发生的能量偏移更小.这些结论对提高GaAs光电阴极光电发射性能有指导意义.