X-ray photoemission spectra of valence electrons in V3X and Nb3X compounds

The X-ray photoemission spectra (XPS) of the A15 type compounds V₃Au, Nb₃Os, Nb₃Ir, Nb₃Pt and Nb₃Au have been studied. The inner level binding energies of the different components and the valence electron distribution were measured. The Nb4d and the X5d energy bands of the Nb₃X compounds appear to be more and more separate with increasing atomic number of the X component. The comparison between the results from X-ray emission spectroscopy (XES) and X-ray photoelectron spectroscopy (XPS) of corresponding V₃X and Nb₃X compounds points out the similarity of their electronic structures.     

Thermoelectric power of quasi-one-dimensional Nb3X4 with X=S, Se andTe

The thermoelectric power of linear chain synthetic metals Nb₃X₄ (with X=S, Se and Te) was measured from 5 to 300 K. The thermopower is negative indicating a dominant transport by electrons. Common to three compounds, in lower temperature regions the thermopower rises linearly with temperature but soon saturates. With respect to Nb₃S₄ and Nb₃Se₄ we have found no special anomaly of the thermopower except for a little higher magnitude.With respect to Nb₃Te₄ anomalies in the thermopower vs temperature appear at about 80 and 20 K which are explained in terms of the charge- density-wave phase transition from the simultaneous measurement of the resistivity and the observation of the electron diffraction patterns.     

Upper critical fields of Nb∼3Au,Nb3Au0.7Pt0.3 and Nb3Pt

Upper critical field measurements of the A15 type compounds Nb_～3Au,Nb₃Au_0.7Pt_0.3 and Nb₃Pt having T_c values of 10.7, 13.0 and 8.7K, respectively, show H_c2(0) values of 235, 295 and 125 kG, respectively. The data for the compounds containing Au fit closely calculations for a dirty type II superconductor with no paramagnetic limiting, but data for Nb₃Pt are slightly above these calculations.     

The electronic structure of hypothetical Nb3Si and V3In

Self-consistent LMTO (Linear Muffin Tin Orbital) band calculations have been performed for Nb₃Si and V₃In. Calculated pressures show agreement with the results from existing Nb₃X and V₃X compounds, when the lattice parameters are 5.125 and 5.025 Å (± 0.025 Å) respectively. At these lattice dimensions, the superconducting transition temperatures are predicted to be approximately 18 K for Nb₃Si and 31 K for V₃In.     

Heat capacity of the Nb3Al0.8Ge0.2 compounds

Heat capacity of the Nb₃Al_0.8Ge_0.2 samples have been measured in the temperature range 14–25K. It has been shown that the electron part of the heat capacity (γ) and the Debye temperature undergo only a small change after thermal treatment leading to significant increase of superconducting T_c. Such an increase of the band density of states N(E_F)_band may be caused by appropriate changes of phonon spectrum. The character of these changes is determined, to a great extent, by localization of the d-electrons in the niobium chains.     

Superconductivity in the Nb cluster compounds Nb3(X,Y)4 with X, Y  S,Se, Te

The Nb-chalcogenides Nb₃X₄ [1–3] with X = S, Se and Te, and Nb₃S_1.7Se_2.3 were prepared from the elements using transport reactions with iodine at temperatures between about 730 and 1050°C. The ternary compound Nb₃S_1.7Se_2.3 was confirmed to be isostructural with the hexagonal Nb₃X₄ of the space group $\text{P6}{}_3\text{m}$. The Nb₃X₄-compounds were found to be superconductors, the transition temperatures to superconductivity reaching from 1.8 to 4.0 K.     

The magnetic properties of some R5Pt3 compounds (R = Gd, Tb, Dy, Ho)

The magnetic susceptibility and magnetization of the R₅Pt₃ intermetallic compounds have been studied. Gd₅Pt₃ is ferromagnetic while Tb₅Pt₃, Dy₅Pt₃ and Ho₅Pt₃ possess rather a non-linear magnetic structure, with strong ferromagnetic interaction and high anisotropy effects at low temperatures.     

超导材料Nb3Ge表面氧化

运用密度泛函理论计算了氧（O）在Nb3Ge表面的吸附,结果表明O倾向于吸附在Nb原子周围,并与Nb的电子轨道发生了明显的交叠,O与Nb形成兼具共价键和离子键特性的化学键。利用X射线光电子能谱对自然氧化的Nb3Ge表面进行成分分析发现：氧化层中只存在Nb的氧化物,理论计算结果与实验结果一致。由于O容易与Nb结合,最外层的Nb因逐渐氧化而耗尽,在接触势的驱使下,内部的Nb原子与最外层的Ge原子交换,最终使得Nb与O的形成氧化物在Nb3Ge表面聚集,在该氧化层下面是由于Nb的耗尽而形成的Ge聚集层。     

超导材料Nb3Ge表面氧化

运用密度泛函理论计算了氧（O）在Nb3Ge表面的吸附,结果表明O倾向于吸附在Nb原子周围,并与Nb的电子轨道发生了明显的交叠,O与Nb形成兼具共价键和离子键特性的化学键。利用X射线光电子能谱对自然氧化的Nb3Ge表面进行成分分析发现:氧化层中只存在Nb的氧化物,理论计算结果与实验结果一致。由于O容易与Nb结合,最外层的Nb因逐渐氧化而耗尽,在接触势的驱使下,内部的Nb原子与最外层的Ge原子交换,最终使得Nb与O的形成氧化物在Nb3Ge表面聚集,在该氧化层下面是由于Nb的耗尽而形成的Ge聚集层。     

Nb3Sn超导电磁铁

本文报导了关于筒形Nb₃Sn磁体的研究结果。观察到磁通跳跃现象。“冻结”场的分布和历史及激发场的分布紧密相关。“冻结”场可以不是中心对称的,这进一步证明了烧结的Nb₃Sn材料是非均匀介质。我们描述了新的磁体结构,避免了磁通跳跃。除利用铁心来捕获磁通外,在激发和测量磁场的方法上均具有一定的特点。利用圆筒状Nb₃Sn作为压挤磁通的活塞,在1.5°K时,曾获得的最高场强是28.5KG。     

Internal energy of AB2X4 crystalline compounds. Electrostatic energy contribution for compounds with closed shell cations

Madelung energy calculations are performed for two different lattices in which some of AB₂X₄ compounds (A = M⁺², B = M^?3, X = O^?2, S^?2, Se^?2, Te^?2) crystalline.A gross evaluation of the covalent bond energy contribution in the same crystals is made and some considerations are draw from the comparison between the two above quoted energy contributions.     

Shear mode spectrum in Nb3Sn

Recent measurements of the shear mode spectrum in Nb₃ Sn are interpreted in terms of the generalized Labbé- Friedel model. These measurements are shown to be consistent with the development of the pronounced Kohn anomaly at low temperatures.     

Susceptibility measurements on some R5In3 compounds

The magnetic susceptibility of some rare earth-indium compounds has been measured in the temperature range 4.2–300 K under a constant field of 1 kOe. The compounds with R = Gd, Tb and Dy are antiferromagnetic, having Néel temperatures between 4.2 and 78 K ; those with R = Ho, Er and Tm seem to be ferromagnetic with ordering temperatures probably below 4.2 K. Y₅In₃ presents a temperature independent susceptibility.     

X-ray spectroscopic studies of electronic structure of the A15 compounds in the system Nb3(Sn-Al)

The present paper is concerned with the X-ray spectrum study of binary niobium A15 compounds and of solid solution based on these compounds. In the case of Nb₃Al the additional maximum of intensity in the long-wave length part of spectrum was observed. The results of the Al Kα-line shift and NbLβ₂-lines study lead to the conclusion that the valence electron Al to Nb₃Al, the decrease being still greater in the Nb₃(Al-Sn) alloys. The valence electrons of tin are largely localized on the “parent” atom.     

MST-Xα calculations on molybdenum disulphide and some related compounds

Self-consistent-field Xα cluster calculations are reported for MoS₂, NbS₂ and ZrS₂. The results are compared with photoemission data. It is concluded that self-consistency and relaxation have a large effect on the relative position of the various energy levels in these compounds.     

Nb2H 的电子结构和相互作用

应用基于密度泛函理论的赝势-平面波方法研究了Nb₂H的电子结构和H原子占据点之间的关系.计算结果表明：由4个Nb近邻构成的四面体中心点(T点)为H的稳定俘获点，而由6个Nb近邻构成的八面体中心点(O点)则为相互作用势的极大值点，是不稳定点.相邻T点间存在低能量通道，具有鞍点(S点)结构.在T点及近邻低能通道上,H的1s能级展宽较弱，Nb的4d, 5s 带部分向下延展，与H带杂化后形成孤立带.当H由T向     

Properties of Nb3Ge tapes for high field magnets

A laboratory process for long Nb₃Ge tapes fabrication by chemical vapor deposition (CVD) has been set up. The Nb₃Ge tapes which were fabricated offer the possibility of high current and high field operation at 4.2 K since the values of critical current densities, J_c, measured in high magnetic fields at 20T and 4.2K exceed 5 × 10⁴ A cm^?2 which is the generally accepted criterion for producing a superconducting magnet.     

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介绍了国内首个聚变堆用Nb3Sn超导磁体模型线圈。采用一维数学模型Gandalf对其管内电缆导体(CICC)结构的超导体稳定性进行仿真,得到了CICC稳定性裕度与磁场强度和运行电流之间的关系。这对于磁体的设计和运行都有十分重要的意义。     

Nb3Sn扩散薄膜的研究

本文叙述对Nb₃Sn扩散薄膜的一项包括高场临界电流机制,合金元素作用机制等内容在内的综合性实验研究。 关键词：     

Superconductivity in Nb.95Ta.05Se3

We have measured the resistivity of NbSe₃ doped with 5% Ta from room temperature down to 0.5K and compared our results with similar measurements on pure NbSe₃. The pure sample remains normal to the lowest temperature (0.5K), whereas the doped sample has a sharp transition to the superconducting state with T_c = 1.5 ± 0.2 K. Measurements of the critical magnetic field indicate that the Ta doped samples are homogeneous, anisotropic three dimensional superconductors.