Interband optical transition strengths in SiO2, GeO2, SnO2 and TiO2

An analysis of interband optical transition strengths for a series of MO₂ oxides is presented which gives clear evidence for a direct proportionality between transition strengths (as measured by the dispersion energy) and nearest-neighbor cation coordination number. It is also found that neither the extent of O2p orbital delocalization nor the d-electron configuration has a strong influence on transition strengths suggestin that these strengths can be viewed, to a good approximation, as intrinsic properties of valence s,p-electrons which are largely independent of band structure details.     

Interatomic exchange in Mn-doped III-V semiconductors

Density-functional calculations are used to determine the electronic structure and magnetic properties of dilute magnetic semiconductors with the composition X_1−xMn_xN (X=Al, Ga, In, x=6.25% and 12.5%). Emphasis is on the interatomic exchange as a function of the Mn-Mn distance. Our superlattice calculations show that the Mn dopants are spin-polarized with a half-metallic band gap and a magnetic moment of 4 μ_B per Mn atom at x=6.25 and 12.5%. The Mn (3d) bands lie in the band gap but partially hybridize with valence band or N 2p electrons, depending on the group-III element and on the spin direction. To calculate the exchange interaction parameters J_ij, we have used a Green-function approach. The interaction between Mn atoms extends over several interatomic interactions and is mediated by nitrogen (2p) electrons. The exchange is always ferromagnetic and largest for the first nearest neighbors, but substantial ferromagnetic interactions persist over Mn-Mn distances up to sixth nearest neighbors in the considered supercell.     

Proprietes optiques et structure electronique de MnAu2

The optical spectrum of the helical antiferromagnetic compound MnAu₂(t_N = 90°C) has been measured, using a scanning ellipsometric method, in UHV, between 0.47 and 5.7 eV, at temperatures ranging from 88 to 700 K. Below 0.6 eV the experimental data can be fitted to a Drude-like intraband model. The maximum of the interband absorption occurs at 5.1 eV, while the onset of interband absorption may be placed at 0?.4eV as is suggested by the rapid rise of $\text{ε}{}_2\text{(ω)}\text{λ}$. below 0.5 eV. In the absence of theoretical work, the analysis of the optical spectrum leads to a preliminary rough model of the electronic structure; the proposed local density of d states is represented. The 5.1eV peak is attributed to d → E_F transitions (parabolic edge at 2.7 eV similar to Au), originating in the lower part of the band, associated mainly with Au sites. To account for the moment $\text{(}\text{3.6μ}{}_{\mathrm{S}}\text{at Mn}\text{)}$, the upper d band (mainly Mn sites) is split: the d↑ band is below E_F (interband edge at 0.4eV), while the d↓ band contains 1.4 electrons. ESCA measurements tend to confirm this model. An important unusual fact is the sharp anomaly of /~ε(ω) in the infrared, around T_N; attempts to correlate this with magnetic (s-d) interactions have been initiated.     

Effects of alloying on the band structure of gold: Piezoreflectance measurements on some AuCo and AuV alloys

Piezoreflectance measurements have been made on a series of gold cobalt and gold vanadium alloys with impurity concentrations of up to 4% using a strain amplitude of 4 × 10^?4 at a frequency of 68 kHz. The spectra show that the main interband transitions occur at 2.4, 3.5 and 4.5 eV. The deformation potentials with impurity concentration have been found for these transitions. An additional interband transition was found to occur at an energy of 1.8eV and this was enhanced significantly with impurity concentration. This may be due to the impurity causing a broadening of the d bands and hence a smearing of the interband threshold or alternatively it may be caused by a d band to Fermi level transition along the Δ direction close to the X point.     

Exciton-phonon coupling in indirect AlxGa1−xAs

Several persistent high-energy peaks in the photo-luminescence spectrum of indirect Al_xGa_1?xAs are reported. These transitions are assigned to zero-phonon and phonon-assisted bound-exciton annihilation processes. Symmetry determined selection rules indicate that the major interband recombination mechanism is due to LO phonon scattering of electrons near X(100) to the energetically adjacent Γ^CB₁ (000) intermediate state. Scattering associated with alloy disorder may also contribute to the spectrum. The change in the phonon-assisted spectra at x = 0.43 ± 0.01 provides an additional means of identification of the direct-indirect conduction band crossover.     

Preparation and physical properties of CuxWO3

We report on the study of WO₃ doped with Cu using sol-gel (Cu_xWO₃^d) and impregnation (Cu_xWO₃ⁱ) methods. All materials are well crystallized and exhibit single phases whose crystallite size ranges from 17 to 100 nm depending on Cu amount and the preparation technique. The conductivity dependence on temperature demonstrates semiconductor behavior and follows the Arrhenius model, with activation energies, E_σ, commonly in the range 0.4-0.6 eV. Moreover, the thermopower study shows that Cu_xWO₃^d is mainly of p-type conductivity, whereas Cu_xWO₃ⁱ is n-type. The mechanism of conduction is attributed to a small polaron hopping. The doping process is found to decrease the interband transition down to 520 nm depending on the preparation conditions. The photoelectrochemical characterization confirms the conductivity type and demonstrates that the photocurrent J_ph increases with Cu-doping. Taking into consideration the activation energy, the flat band potential and the band gap energy, the band positions of each material are proposed according to the preparation method and Cu amount.     

Measured and predicted band model parameters of BF3(v3) at high temperatures

Two experimental techniques were used to determine the high temperature infrared absorption coefficients of the v₃ band of BF₃. A high temperature flow tube fitted with a multipass infrared absorption cell was used to determine the BF₃ absorption coefficients at 295, 585, 870, 1150, and 1440K. BF₃ was also used in a flame emission-absorption apparatus to determine the BF₃ absorption coefficients at 2400 K.A generalized formulation for predicting the S/d and 1/d band model parameters of symmetric top perpendicular bands of MX₃ molecules is presented. The effect of including nuclear spin statistics in computing the S/d and 1/d band model parameters is considered. It is shown that nuclear spin statistic?s effect only the 1/d parameter and are significant only for the case of zero nuclear spin. A number of practical considerations, which arise in designing a computer algorithm to calculate the S/d and 1/d parameters, are discussed.Comparisons of the theoretical and experimental BF₃ absorption coefficients are made. Good agreement between theory and experiment at all temperatures was obtained by adjusting only two vibrational energy coupling constants, _χ23 and _χ34. Predicted S/d and 1/d band model parameters at 300, 600, 900, 1200, 1500, 2000, 2500, and 3000 K are presented.     

Structure electronique des oxydes de cobalt CoO et Co3O4

The total density of occupied states in the valence band of CoO and Co₃O₄ is determined by XPS and UPS. From variations of excitation probability of the bands, the 4 e V wide O2_p band is shown to be located around 5 eV for both oxides, while structures obtained from photoionisation of the localized 3d band spread over 10 eV range below the Fermi level overlapping with O2_p band. The 3d peaks located at binding energy <3 eV correspond to the calculated energy of the d_n ?1 manifold final state in the octahedral and tetrahedral crystal field of CoO and Co₃O₄. The 3d levels at higher binding energy are shown to occur from configuration interaction in both final and initial states. These last peaks are higher in intensity for CoO relative to Co₃O₄. A superior limit for the width of the 3d initial band in a one electron energy diagram is given to be <3 eV. This value associated to the Coulomb correlation energy measured equal to ~3 eV. This value associated to the Coulomb correlation energy measured equal to ~3 eV from shake-up and Auger energy confirms the Mott insulator nature of CoO.     

Elastic properties, thermal expansion coefficients and electronic structures of Ti0.75X0.25C carbides

Elastic properties, thermal expansion coefficients and electronic structures of Ti_0.75X_0.25C carbides (X=W, Mo, Ta, Nb, V, Hf, Zr, Cr and Al) were systematically investigated using ab initio density functional theory (DFT) calculations. The calculated elastic moduli, electronic structures and thermal expansion coefficients α(T) of pure TiC are in good agreement with experimental data and other DFT calculations. Based on a phenomenological formula, the trends of elastic properties and ductile/brittle behavior of Ti_0.75X_0.25C were analyzed. It was found that alloying elements W, Mo, Ta, Nb, V and Hf can increase elastic moduli, while Zr, Cr and Al reduce moduli. The nearly free electron model and Debye approximation were applied in the evaluation of α(T). The anharmonic effect was taken into account by including volume-dependent elastic moduli and Debye temperature. Results show that alloying additions of 3d V, 4d Zr and Mo slightly reduce α(T), while 3d Cr increases α(T), Al, 4d Nb, 5d Hf and W almost keep α(T) unchanged in Ti_0.75X_0.25C at high temperatures. The electronic structures of Ti_0.75X_0.25C were calculated and analyzed, and the electronic density of states was used to interpret variations of elastic properties and ductile/brittle behavior induced by alloying additions.     

Charge-transfer transitions and optical spectra of chromites

Specific features of charge-transfer states and charge-transfer transitions of the O_2p → Cr_3d type in octahedral complexes (CrO₆)^9? have been considered in the cluster approximation. Reduced matrix elements of the electric-dipole moment operator on many-electron wave functions, which are the initial and final states for charge-transfer transitions, are calculated. The results are parameterized, and the relative intensities of different allowed charge-transfer transitions in the absence of mixing of different charge-transfer configurations with identical symmetry are calculated. This mixing is taken into account within the Tanabe-Sugano theory, and the true energies and intensities of many-electron charge-transfer transitions are obtained. The Coulomb interaction between 2p electrons of O^2? ligands and 3d electrons of the central Cr³⁺ ion in (CrO₆)^9? cluster is considered. The influence of this interaction on the optical spectra is found to be insignificant. Simulation of the optical spectra of chromium oxides has shown the presence of a band of complex charge-transfer transitions composed of 33 lines with a total width of about 8 eV. The model spectrum is in adequate agreement with the experimental data, which indicates limited applicability of the widespread view that charge-transfer transition spectra have a simple structure.     

Resonance Raman scattering in Ti2O3 in the range 1.8–2.7 eV

Measurements of resonance Raman scattering from the A_1g and E_g modes of Ti₂O₃ at room temperature were made in the energy range 1.8–2.7 eV. The results are interpreted in terms of a phonon modulation of the optical spectrum and related energy level structure. New information concerning assignments of interband transitions as well as further insight into the nature of d-electron/phonon interaction has been obtained.     

Core-exciton spectra of AlxGa1−xAs studied with synchrotron radiation

Core-exciton spectra of Al_xGa_1?xAs have been measured in the photon-energy region from 19 to 27 eV by use of synchrotron radiation. The core-excitons associated with the Ga 3d core-hole and the conduction electron around the lowest L₆ and X₆ symmetry points are found to be coupled with each other through intervalley electron-hole interactions. Quantitative analyses have elucidated that intervalley Coulomb term is playing a dominant role for this coupling. Another higher energy doublet structure is interpreted as due to the transition from the Ga 3d core-levels to the rather flat region in the second lowest conduction band around the L₆ and L_{4, 5} symmetry points.     

A SCF-Xα MO study of core photoelectron shake-up satellites in MnF2 and MnI2

SCF-Xα MO calculations on Mn2p core ion states of MnF₂ and MnI₂ suggest that on energetic grounds the observed Mn2p photoelectron satellites should be assigned to shake-up transitions from the Mn3d crystal field orbitals to the conduction band.     

X-ray photoemission spectra of valence electrons in V3X and Nb3X compounds

The X-ray photoemission spectra (XPS) of the A15 type compounds V₃Au, Nb₃Os, Nb₃Ir, Nb₃Pt and Nb₃Au have been studied. The inner level binding energies of the different components and the valence electron distribution were measured. The Nb4d and the X5d energy bands of the Nb₃X compounds appear to be more and more separate with increasing atomic number of the X component. The comparison between the results from X-ray emission spectroscopy (XES) and X-ray photoelectron spectroscopy (XPS) of corresponding V₃X and Nb₃X compounds points out the similarity of their electronic structures.     

Exciton in wurtzite GaN/AlxGa1−xN coupled quantum dots

Based on effective-mass approximation, we present a three-dimensional study of the exciton in GaN/Al_xGa_1−xN vertically coupled quantum dots (QDs) by a variational approach. The strong built-in electric field due to the piezoelectricity and spontaneous polarization is considered. The relationship between exciton states and structural parameters of wurtzite GaN/Al_xGa_1−xN coupled QDs is studied in detail. Our numerical results show that the strong built-in electric field in the GaN/Al_xGa_1−xN strained coupled QDs leads to a marked reduction of the effective band gap of GaN QDs. The exciton binding energy, the QD transition energy and the electron-hole recombination rate are reduced if barrier thickness L^AlGaN is increased. The sizes of QDs have a significant influence on the exciton state and interband optical transitions in coupled QDs.     

Theoretical calculations of the optical band positions and spin-Hamiltonian parameters for Cr ions in Y2Ti2O7 crystal

The optical band positions and spin-Hamiltonian parameters (g factors g_g_? and zero-field splitting D) for the trigonal Cr³⁺ centers in Y₂Ti₂O₇ crystal are calculated from the complete diagonalization (of energy matrix) method based on the two-spin-orbit-parameter model. In the calculations, the contributions to spectral data from both the spin-orbit parameter of central dⁿ ion and that of ligand ion are considered and the crystal field parameters used are estimated from the superposition model. The calculated results are in reasonable agreement with the experimental values. The defect structures of Cr³⁺ center is suggested.     

First-principles study of photoconductivity in BaTiO3 with oxygen vacancies

The photoconductivity of BaTiO_2.5 with oxygen vacancy has been studied by the linear muffin-tin orbital method in the atomic sphere approximation (LMTO-ASA). The ground-state structure of BaTiO_2.5 is obtained by minimization of the total energy. The partial densities of states show that the occupied states at the bottom of the conduction band have primarily Ti d orbital character. The photoconductivity shows that two novel features, in the low energy side, can be attributed to the intraband transition of free electronic carriers in the vicinity of the Fermi level and the interband transition of the Ti 3d(yz) related band states, to the Ti 3d(xy,xz) related band states, respectively. In addition, it is also found that the anisotropy of photoconductivity is enhanced because of the introduction of oxygen vacancy. The system can show the conductive behavior of electronic carriers, which is qualitatively in agreement with a recent experimental finding.     

Giant exciton Faraday rotation in Cd1−xMnxTe mixed crystals

New semiconductor compound Cd_1?xMn_xTe exhibits strong Faraday rotation in the interband region. It is shown by measurements of magneto-optical Kerr effect and reflection in magnetic field that unusually large exciton Zeeman splitting plays an essential role in the observed Faraday rotation. A possible explanation of the observed splitting (corresponding to a “g factor” value up to 100) by exchange interaction of excitons with manganese d states is suggested.     

Contribution electronique au gradient de champ electrique sur une impurete de transition dans un environnement metallique anisotrope

The experimental data related to the electric field gradient at transition impurities either in hexagonal metals, or in cubic metals where the isotropy is perturbed by a next impurity, can be explained neither by the lattice contribution nor by the electronic contribution from the conduction band. A model is proposed here to investigate the electronic contribution arising from virtual bound 3d states on the impurity, by studying the local crystal field influence in a Friedel-Anderson model. It appears that at the 0°K limit, the localized electronic contribution to the EFG can be linearly related to the density n_d(?_F) of 3d states at the Fermi level. As a first approximation, this law is valid even at temperature different from 0°K so establishing a linear correlation between the EFG, the impurity resistivity and the amplitude of the charge perturbation around the impurity.     

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Considering the strong built-in electric field (BEF), dielectric-constant mismatch and 3D confinement of the electron and hole, the exciton states and interband optical transitions in [0 0 0 1]-oriented Ga-rich wurtzite In_xGa_1−xN/GaN strained quantum dot (QD) nanowire heterostructures are investigated theoretically using a variational approach under the effective mass approximation. We find that the strong BEF gives rise to an obvious reduction of the effective band gap of QDs and leads to a remarkable electron-hole spatial separation. The BEF, QD height and radius, and dielectric mismatch effects have a significant influence on exciton binding energy, electron interband optical transitions, and the radiative decay time. Our calculations show that the radiative decay time of the redshifted transitions is large and increases almost exponentially when the QD height increases, which is in good agreement with the previous experimental and theoretical results.