Spin density functional theory of the temperature-dependent spin susceptibility: Pd and Pt

The finite temperature spin density functional (SDF) formalism is used to derive a variational expression for the temperature-dependent spin susceptibility χ_p(T) of an inhomogeneous electron gas. The use of a simple trial function in the variational expression results in a Stoner form for χ_p(T), i.e., χ_p(T) ≥ χ_s(T)/[1 - I(T) χ_s (T)] where χ_s(T) is the single-particle spin susceptibility including exchange-correlation (XC) effects on the band structure within the framework of the density functional formalism and I(T) is the SDF analog of the Stoner parameter. It should be emphasized that this form for χ_p(T) is derived for a general XC free energy functional F_xc[n, m; T]. χ_s(T) has been calculated self-consistently, including relativi stic effects, using the local approximation for F_xc for Pd and Pt. These results have been used to investigate the temperature dependence of I(T) required to explain their experimental susceptibilities. It is found that when the spin-orbit interaction is included in the calculation of χ_s(T), the temperature variation of I(T) is stronger than that of χ_s(T).     

A law of corresponding states for the superfluid fraction of He II

The superfluid fraction ?_s/? in He II has been accurately measured at more than 400 points throughout the P-T plane above 1.2 K and is found to be a universal function of the reduced temperature T/T_λ(P).     

Ferroelectric films of deuterated glycine phosphite: Structure and dielectric properties

Polycrystalline textured films of deuterated glycine phosphite consisting of single-crystal blocks with lateral dimensions ～(50–100) μm and a thickness d ～ (1–5) μm have been grown by evaporation on NdGaO₃(100) and α-Al₂O₃ substrates with preliminarily deposited interdigitated electrodes, as well as on Al substrates. The c* (Z) crystallographic axis in the blocks is normal to the film plane, and the a (X) axis and the polar axis b (Y) are oriented in the film plane. The temperature dependences of the capacitance of the structures measured with the interdigitated electrode system reveal a strong dielectric anomaly at the film transition to the ferroelectric state. The phase transition temperature T _c depends on the degree of deuteration D of the glycine phosphite. The maximum value T _c = 275 K obtained in the structures studied corresponds to a degree of deuteration of the glycine phosphite D ～ 50%. The frequency behavior of the dielectric hysteresis loops in glycine phosphite films differs radically from that of the previously studied films of deuterated betaine phosphite, which evidences that polarization switching in these structures proceeds by different mechanisms. It has been that application of a dc bias to the electrodes changes the shape of the dielectric hysteresis loops and shifts them along the electric field axis. The shift of the loops depends on the sign, magnitude, and time of application of the bias. Possible mechanisms underlying the induced unipolarity are discussed.     

Effects of spatial dispersion at intraband transitions in multiple quantum well structures

Effects of spatial dispersion in reflection of light from multiple quantum well structures of different symmetry have been investigated. It has been shown that with inclined incidence of linearly polarized light on the system of symmetry C _∞v , the reflected wave starts to manifest the circular polarization. Upon the incidence of s(p)-polarized light on the structure of the D _2d symmetry, the reflected wave starts to manifest p(s) component, while in the case of the point symmetry C _2v , this phenomenon also occurs for the normal incidence. The magneto-spatial dispersion in the magnetic field lying in the structure plane leads to the same conversion of polarization. Dependences of the polarization-sensitive reflection coefficients on the incidence angle are calculated. The microscopically gyrotropic contributions to the dielectric permittivity of the multiple quantum well structures are calculated for the intraband frequency range. Evaluations show that the effects of spatial dispersion in such systems can be observed experimentally.     

Semi-inclusive scaling for largepT events

We consider semi-inclusive reactions of the type p + p → (particle with large p_T) + n charged particles + neutrals, and propose the following scaling law

$\text{E}\text{d}{}^3\text{σ}{}_{\mathrm{n}}\text{d}{}^3\text{p}\text{=}\text{1}\text{(}\text{s}\text{)}{}^{\mathrm{k+1}}\text{H}{}^{\mathrm{2p}}\text{T}\text{s}\text{,}\text{n}\text{s}$

for the distribution function of the large-p_T particle produced in association with n charged particles. This scaling rule is shown to be consistent with present information on single-particle spectra and average associated multiplicities at large p_T. Also, we show that if the associated multiplicity were to continue to increase linearly with p_T, then moments of the multiplicity distribution would increase like powers of s.     

Development of electronic structure of Ni thin films on Cu(0 0 1) surfaces

We have traced the development of the Ni electronic structure with thickness variation on flat and nano-structured Cu(0 0 1) surfaces by means of photoemission spectroscopy. The binding energy of the Ni 2p_3/2 main peak and satellite peak is found to have shifted monotonically in the direction opposite to each other, with the increase of Ni coverage. The reduced binding energy of the thin film’s main peak is strongly correlated to the Cu 4s/Ni 3d interfacial hybridization effect (s/d IHE) and the narrowing of the d band with the reduction of dimensions, while the increased satellite binding energy results from the combination of interface hybridization and expansion of an extended 4s-like state towards the vacuum. The center of the Ni d_xy band is predicted to shift closer to the Fermi level with increasing film thickness. Enhanced satellite intensity in thin films is observed, correlating to the narrowing of the d band with decreased film thickness. Through comparison of Ni films grown on flat versus nano-structured Cu(0 0 1) surfaces, the mixing of Cu and Ni atoms is found to be enhanced at the terrace edge region and consequently a larger s/d IHE is predicted for Ni on the nano-structured surface.     

Higher order QCD corrections to an exclusive two-photon process

We calculate the next-to-leading order QCD corrections in the $\text{MS}$ scheme to the coefficient functions in an operator product expansion of the amplitude T(q², p²) for the process $\text{γ}{}^1\text{(q) + γ}{}^1\text{(p) →}\text{helicity-zero}$, flavour non-singlet meson in which ?q² is large and ?p² ? 0. For an asymptotic wave function the complete O(α_s) correction for a pseudoscalar meson is about 16% for p² = 0 and α_s = 0.3; most of this correction can be removed by using a modified evolution equation for the wave function, leaving a correction of about 7%. For large p² the complete O(α_s) correction for a pseudoscalar meson is about 10%. We discuss how our results can be combined with similar calculations for the pion form factor F_π(Q²) to give a prediction: F_π(Q²) = Aα_s(Q²)T_π²(q², 0)(1 + Bα_s) that is independent of the as yet unknown two-loop anomalous dimension matrix.     

Vehicular traffic through a self-similar sequence of traffic lights

We study the dynamical behavior of vehicular traffic through a sequence of traffic lights positioned self-similarly on a highway, where all traffic lights turn on and off simultaneously with cycle time T_s. The signals are positioned self-similarly by Cantor set. The nonlinear-map model of vehicular traffic controlled by self-similar signals is presented. The vehicle exhibits the complex behavior with varying cycle time. The tour time is much lower such that signals are positioned periodically with the same interval. The arrival time T(x) at position x scales as (T(x)-x)∝x^d_f, where d_f is the fractal dimension of Cantor set. The landscape in the plot of T(x)−x against cycle time T_s shows a self-affine fractal with roughness exponent α=1−d_f.     

Wilson coefficients for parton decay at order αs

We calculate, at order α_s, certain Wilson coefficients that relate to the P_T spread of quark jets in QCD. Also included is a calculation of the quark decay function d(z) in a spacelike axial gauge.     

Perturbation of the Laplacian supported by null sets,with applications to polymer measures and quantum fields

We discuss hamiltonians in L²(R^d, dx) of the form H = ?Δ + V, with V a potential supported by a zero measure set C. In particular if C is a path of a brownian motion b such that V(x) = ∫₀¹λ(x, ω)δ(x-b(s, ω)) ds, we show that H exists as a nontrivial, self-adjoint, lower bounded perturbation of ?Δ when d ?5. We must choose λ to be an infinitesimal, negative function for d = 4,5, but for d ? 3 any bounded real-valued function λ will do. The connection with Edward's model of polymers as well as with quantum fields of the ?_d⁴-type is also discussed. The proofs use methods of nonstandard analysis.     

Optical band gap and refractive index dispersion parameters of As x Se70Te30−x (0≤x≤30 at.%) amorphous films

Amorphous As _x Se₇₀Te_30?x thin films with (0≤x≤30 at.%) were deposited onto glass substrates by using thermal evaporation method. The transmission spectra T(λ) of the films at normal incidence were measured in the wavelength range 400–2500 nm. A straightforward analysis proposed by Swanepoel based on the use of the maxima and minima of the interference fringes has been used to drive the film thickness, d, the complex index of refraction, n, and the extinction coefficient, k. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model (WDD). Increasing As content is found to affect the refractive index and the extinction coefficient of the As _x Se₇₀Te_30?x films. With increasing As content the optical band gap increases while the refractive index decreases. The optical absorption is due to allowed indirect transition. The chemical bond approach has been applied successfully to interpret the increase of the optical gap with increasing As content.     

Pressure effect on magnetization for (CoTm)90Zr10 (Tm = Cr,Mo) amorphous alloys

Temperature dependences of the forced volume magnetostriction dω/dH and the saturation magnetization σ_s for (CoTm)₉₀Zr₁₀ (Tm = Cr, Mo) amorphous alloys have recently been measured by the 3-terminal capacitance method and a vibrating sample magnetometer and magnetic balance at temperatures from 77 K to the Curie temperature T_c or the crystallization temperature. The pressure coefficient of σ_s0 at 0 K, d ln σ_s0/dp, is estimated from (dω/dH)₀ extrapolated to 0 K using the thermodynamical relation. The values of d ln σ_s0/dp increase in negative value with increasing Tm concentration. The relation between d ln σ_s0/dp and the pressure coefficient of T_c, d ln T_c/dp, estimated indirectly from dω/dH is discussed.     

On the susceptibility exponent of random anisotropy magnets

The temperature dependence of the non-linear susceptibility ≈₂(T) of random anisotropy magnets in the Ising limit (speromagnets) is calculated for temperatures above the freezing temperature T_f within the framework of the correlated molecular field theory. For the effective susceptibility exponent λ_s(T) = (T?T_f)≈₂d^-1_≈2/dT a non-monotonic temperature dependence is found as for the case of spin glasses. This must be taken into account in order to obtain reliable values for the critical susceptibility exponent from experimental data.     

Nature of the low-temperature colossal magnetoresistance of La0.35Nd0.35Sr0.3MnO3 epitaxial films

The colossal negative magnetoresistance (approximately 12%) in a field of 8.4 kOe over a wide range of temperatures below the Curie point T _C ≈240 K in a single-crystal La_0.35Nd_0.35Sr_0.3MnO₃ film on a single-crystal (001)ZrO₂(Y₂O₃) wafer substrate is discussed. Isotherms of the magnetoresistance of this film reveal that its absolute value increases with the field, abruptly in the technical magnetization range and almost linearly in stronger fields. For three single-crystal films of the same composition on (001)LaAlO₃, (001)SrTiO₃, and (001)MgO substrates, colossal magnetoresistance only occurred near T _C ≈240 K and at T<T _C it increased weakly, almost linearly, with the field. In the film on a ZrO₂(Y₂O₃) substrate the electrical resistivity was almost 1.5 orders of magnitude higher than that in the other three films. It is shown that this increase is attributable to the electrical resistance of the interfaces between microregions having four types of crystallographic orientations, while the magnetoresistance in the region before technical saturation of the magnetization is attributable to tunneling of polarized carriers across these interfaces which coincide with the domain walls (in the other three films there is one type of crystallographic orientation). The reduced magnetic moment observed for all four samples, being only 46% of the pure spin value, can be attributed to the existence of magnetically disordered microregions which originate from the large thickness of the domain walls which is greater than the size of the crystallographic microregions and is of the same order as the film thickness. The colossal magnetoresistance near T _C and the low-temperature magnetoresistance in fields exceeding the technical saturation level can be attributed to the existence of strong s-d exchange which is responsible for a steep drop in the carrier mobility (holes) and their partial localization at levels near the top of the valence band. Under the action of the magnetic field the carrier mobility increases and they become delocalized from these levels.     

Critical temperature of superconductor/ferromagnet bilayers

Superconductor/ferromagnet bilayers are known to exhibit nontrivial dependence of the critical temperature T _c on the thickness d _f of the ferromagnetic layer. We develop a general method for investigation of T _c as a function of the bilayer parameters. It is shown that interference of quasiparticles makes T _c (d _f ) a nonmonotonic function. The results are in good agreement with experiment. Our method also applies to multilayered structures.     

Phenomenological description of the microwave surface impedance and complex conductivity of high-T c single crystals

Measurements of the microwave surface impedance Z _s (T) = R _s (T) + iX _s (T) and the complex conductivity σ_s(T) in the ab-plane of high-quality high-T _c YBCO, BSCCO, TBCCO, and TBCO single crystals are analyzed. Experimental data of Z _s (T) and σ_s(T) are compared with calculations based on a modified two-fluid model that includes a temperature-dependent quasiparticle scattering and a unique temperature variation of the density of superconducting carriers. We describe the agreement and disagreement of our analysis with the salient features of the experimental data. We review the existing microscopic models based on unconventional symmetry types of the order parameter and on novel quasiparticle relaxation mechanisms.     

Thermally stimulated electromagnetic-field spectra in planar structures of complex composition: II. Radiative fields

It is demonstrated that the spectral composition of the radiative thermal fields of a Cd _x Zn_{1 ? x}Te solid solution film on a metallic substrate is sensitive to small changes in the impurity concentration and film thickness. The calculated spectral densities of the p- and s-polarized states of the radiative component of thermal fields in a plane-layered system are compared using the refraction additivity principle. The spectral densities are calculated at different values of the impurity concentration and film thickness.     

Insulator-conductor transition in liquid aluminium trichloride

We report molecular-dynamics simulations of ionic structure and diffusion in a pseudoclassical model of AlCl₃ over a wide region of the pressure-temperature (p,T) plane. The model melts from a layer crystal into a molecular liquid at low (p,T) and into a dissociated ionic liquid at high (p,T), in accord with x-ray diffraction studies of the AlCl₃ material. We show that pressure drives a broad liquid-liquid transition from a molecular insulator to an ionic conductor and trace the transition line in the (p,T) plane. This line has a negative dp/dT slope and appears to branch out from an anomaly in the melting curve.     

Effect of sintering temperature on the chemical state of ions in the Ba1 − x Sr x TiO3 (x = 0.2) system,according to X-ray photoelectron spectroscopy data

The chemical state of ions in different samples of ceramics of the Ba_{1 ? x} Sr _x TiO₃ (x = 0.2) system produced by varying only a single technological parameter (sintering temperature T _S) is studied by means of X-ray photoelectron spectroscopy. The X-ray electron spectra of the Ba4d, Sr3d, O1s, and Ti2p levels reveal well-marked fine structures. As expected, the energy position and intensity of the features of this fine structure vary with T _S.     

Piezoelectric properties of new ternary Bi1/2(Na, Li)1/2TiO3–(Bi1/2K1/2)TiO3–Ba0.85Ca0.15Ti0.90Zr0.10O3 ceramics

0.852[Bi_1/2(Na_1?x Li _x )_1/2]TiO₃?C0.110(Bi_1/2K_1/2)TiO₃?C0.038Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃ (BNLT?CBKT?CBCTZ-x) new ternary piezoelectric ceramics were fabricated by the conventional solid-state method, and their piezoelectric properties as a function of the Li content were mainly investigated. A?stable solid solution with a single perovskite structure has been formed, and the depolarization temperature (T _d) of these ceramics was identified by using the temperature dependence of the dielectric loss. The T _d value of these ceramics gradually decreases, while the T _m value increases with increasing the Li content. The dielectric constant increases and the dielectric loss decreases with increasing the Li content, and an enhanced piezoelectric behavior of d ₃₃??223 pC/N and k _p??35.2?% has been demonstrated in these ceramics with x=0.06.