Magnetostriction measurements of CoS2 single crystal

The magnetorestriction constants of CoS₂ single crystal were measured by a capacitance method in a temperature range from liquid N₂ to the Curie temperatures.The constants γ₁₀₀ and γ₁₁₁ are ?1.9 × 10^?6 and 5.7 × 10^?6 at liquid N₂ temperature respectively, and the absolute values of the constants decrease monotonically with the increase of the temperature. The volume magnetorestriction constant δω/δH at 110 K in the ferromagnetic state is 6 × 10^?10 Oe^?1.     

Measurement of magnetostriction and anisotropy of Mg-ferrite

The magnetostriction constants λ₁₀₀ and λ₁₁₁ and the anisotropy constant K₁ of Mg-ferrites [Mg_η;Fe_1?η][Mg_1?ηFe_1+η]O₄, (η = 0·101, 0·154, 0·184, 0·219) at room temperature, liquid N₂ temperature and liquid He temperature were observed by ferrimagnetic resonance techniques at 9·5 GHz.The signs of the magnetostriction constants λ₁₀₀ and λ₁₁₁ are always negative and positive, respectively and the magnitudes of these constants increase with decreasing temperature. These constants λ₁₀₀ and λ₁₁₁ at liquid He temperature are found to be ? 14·4 × 10^?6 and 2·4 × 10^?6 respectively, when η is 0·101, and then the magnitudes of those constants decrease linearly with increasing η.     

Magnetostriction and anisotropy of CoxFe3xO4 (x≤0.1) single crystals

Using the strain gauge technique, the magnetostriction constants λ_[100] and λ_[111] have been measured on single crystals of Co_xFe_3-xO₄ with compositions 0.0005≤x≤0.1 in the temperature range between 100 and 300 K and using magnetic fields up to 23 kOe. The presence of Co²⁺-ions gives rise to a very large negative value of λ_[100] and a fairly large positive value of λ_[111]. A linear relationship is found between the magnetostriction constants and the cobalt concentration.Some conclusions about the anisotropic beheviour of the samples can be made, based on the magnetostriction measurements. The change of the direction of easy magnetization from [111] to [100] in the temperature range just above the Verwey transition, is illustrated and discussed. It turned out to be possible to determine an effective anisotropy constant K'₁ through a curve fitting procedure. It is found that 1n K'₁ varies linearly with T.     

Conductivity enhancement in fluorite-structured Ba1−xLaxF2+x solid solutions

The ionic conductivity of single crystals of the fluorite-structured solid solutions Ba_1?xLa_xF_2+x(10^?3 <×<0.45) has been studied as a function of temperature and composition in the range 300–900 K. Three regions can be discerned in the concentration dependence of the ionic conductivity: a dilute concentration region (x<10^?3), where classic relations between solute content and ionic conductivity hold; an intermediate concentration region (10^?3<x?5×10^?2), where large changes occur in the conductivity activation enthalpy and the magnitude of the conductivity; and a concentrated solid solution region (x?5×10^?2) characterized by enhanced ionic motion. In the dilute region the migration enthalpy for interstitial fluoride ions is determined to be 0.714 eV, while a value of 0.39 eV is found for the (La_BaF_i)^X association enthalpy. The defect chemistry in the intermediate concentration region is shown to be controlled by a superlinear increase of the concentration of mobile defects, while in the concentrated solid solution region a composition-independent amount of ≈1 mole% of interstitial fluoride ions with enhanced mobility, carry the current.     

Nuclear magnetic resonance of intermetallic compounds Gd2Ni17−xAlx

²⁷Al Knight shifts vs temperature and magnetic susceptibility for the intermetallic compounds Gd₂Ni_17?xAl_x (x = 17; 16.2; 16; 15) are presented. The results are discussed in terms of the uniform polarization model fo the conduction electrons by the 4f and 3d spins localized on the Gd and Ni ions. The phenomenological exchange constants J_sf and J_sd range between ?1.80×10^?3 and 1.19×10^?3 eV and ?0.63×10^?3 and ?0.52×10^?3 eV, respectively.     

Spectral and nonlinear studies of an aniline blue dye in liquid and solid media

Solid-state dye-doped polymers are an attractive alternative to conventional liquid dye solutions. In this paper, the spectral characteristics and nonlinear properties of the Aniline Blue dye has been studied. The third-order nonlinear optical properties of the Aniline Blue dye in ethanol and a dye-doped polymer film were measured by the Z-scan technique using a 632.8-nm He-Ne laser. This material exhibits a negative optical non-linearity. The dye at a 0.4-mM concentration exhibited a nonlinear refractive coefficient (n ₂ = ?4.02 × 10^?8 and ?4.41 × 10^?8 cm²/W in liquid and solid media, respectively), a nonlinear absorption coefficient (β = ?9.7 × 10^?4 and ?11.63 × 10^?4 cm/W in liquid and solid media, respectively), and susceptibility (x ⁽³⁾ = 1.844 × 10^?6 and 2.028 × 10^?6 esu in liquid and solid media, respectively). These results show that the Aniline Blue dye has potential applications in nonlinear optics.     

A monte-carlo/molecular dynamics study of the diffusional recombination kinetics of C(a) + O(a) → CO(g) on Pt(111)

The diffusion constants for C and O adsorbates on Pt(111) surfaces have been calculated with Monte-Carlo/Molecular Dynamics techniques. The diffusion constants are determined to be D_C(T)=(3.4 × 10^?3e^{$\text{?13156}\text{T}$})cm²s^?1 for carbon and D_O(T) = (1.5×10^?3 e^{$\text{?9089}\text{T}$}) cm² s^?1 for oxygen. Using a recently developed diffusion model for surface recombination kinetics an approximate upper bound to the recombination rate constant of C and O on Pt(111) to produce CO_(g) is found to be (9.4×10^?3 e^{$\text{?9089}\text{T}$}) cm² s^?1.     

Ionic conductivity of Zr1−xIn2xO2−x

As x in Zr(In)O_2?x is increased from 0.08 to 0.16 (9–19 mole per cent In₂O₃) the activation energy E(x) for ionic conduction increases from 1.05 to 1.51 eV; the concuctivity decreases from 2 × 10^?5 to 3 × 10^?6Ω^?1cm^?1at 400°C, is composition-independent at about 580°C, and increases from 1 × 10^?2 to 4 × 10^?2Ω^?1cm^?1 at 800°C. The pre-exponential term of the Boltzmann-type conductivity equation depends exponentially on E(x), a much stronger dependence on x than theoretically expected with a model for ionic conductivity that includes nearest-neighbor defect interactions. Analysis of reported conductivity data for Zr(M)O_2?x (M = Sc, Y, Ca and rare earth metals) and other doped oxide electrolytes with fluorite-type structure reveals that the same relationship is observed with these materials when x γ0.08. It is shown that ionic conduction in these oxides is consistent with nearest neighbor vacancy-cation defect interaction forx < 0.08 but that an additional complex interaction with composition-dependent free energy ΔG(x) occurs when xγ 0.08.The lattice constant of Zr(In)O_2?x with the cubic fluorite-type structure is independent of composition, 5.114 ± 0.002 Å, in agreement with ionic size considerations.     

Sol–gel auto-combustion synthesis,structural and enhanced magnetic properties of Ni substituted nanocrystalline Mg–Zn spinel ferrite

Nanocrystalline arrays of Ni²⁺ substituted Mg–Zn spinel ferrite having a generic formula Mg_0.7−xNi_xZn_0.3Fe₂O₄ (x=0.0, 0.2, 0.4 and 0.6) were successfully synthesized by sol–gel auto-combustion technique. The fuel used in the synthesis process was citric acid and the metal nitrate-to-citric acid ratio was taken as 1:3. The phase, crystal structure and morphology of Mg–Ni–Zn ferrites were investigated by X-ray diffraction, scanning electron microscopy, and Fourier transformer infrared spectroscopy techniques. The lattice constant, crystallite size, porosity and cation distribution were determined from the X-ray diffraction data method. The FTIR spectroscopy is used to deduce the structural investigation and redistribution of cations between octahedral and tetrahedral sites of Mg–Ni–Zn spinel structured material. Morphological investigation suggests the formation of grain growth as the Ni²⁺ content x increases. The saturation magnetization and magneton number were determined from hysteresis loop technique. The saturation magnetization increases with increasing Ni²⁺ concentration ‘x’ in Mg–Zn ferrite.     

ESR and optical study of Cu2+-doped bis-(5,5′-diethylbarbiturato)bis picoline Zn(II)

ESR studies were conducted on Cu²⁺-doped bis-(5,5′-diethylbarbiturato)bis picoline Zn(II). Two Cu²⁺ lattice sites, Cu²⁺(I) and Cu²⁺(II), were identified. These sites exhibit two sets of four hyperfine lines in all directions. The g factor and hyperfine splitting were calculated from ESR absorption spectra: g_x ?=?2.0201?±?0.002, g_y ?=?2.0900?±?0.002, g_z ?=?2.1634?±?0.002, A_x ?=?(30?±?2)?×?10^?4?cm^?1, A_y ?=?(40?±?2)?×?10^?4?cm^?1 and A_z ?=?(154?±?2)?×?10^?4?cm^?1. It was found that Cu²⁺ enters the lattice substitutionally. The ground-state wavefunction of the Cu²⁺ ion in this lattice was determined from the spin Hamiltonian constants obtained from the ESR studies. With the help of an optical absorption study, the nature of the bonding in the complex is also discussed.     

Na+ ion conductivity and crystallographic cell characterization in the Hf-nasicon system Na1+xHf2SixP3−xO12

We have measured the effect of varying the mobile ion concentration on the sodium ion conductivity in the Hf-Nasicon system, Na_1+xHf₂Si_xP_3-xO₁₂, for 1.4 ? x ? 2.8. The conductivity is greatest for Na_3.2Hf₂Si_2.2 P_0.8O₁₂: σ_25°C = 2.3 × 10^?3 (ω cm)^?1, and σ_250°C = 1.7 × 10^?1 (ω cm)^?1. These values are approximately 50% greater and worse, respectively, than the values reported for the best Zr-Nasicon. We have characterized the variation of lattice parameters with composition and found the behavior to be similar to that of Zr-Nasicon. A small distortion from rhombohedral to monoclinic symmetry occurs for compositions 1.8 ? x ? 2.2.     

Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions

The characteristics of a damaged layer of p-Cd _x Hg_{1 ? x} Te/CdZnTe (x ～ 0.223) heterostructures after implantation by 100-keV silver ions with the implantation dose Q = 3.0 × 10¹³ cm^?2 have been obtained using X-ray diffraction, atomic force microscopy, and electron microscopy. It has been found that, as a result of the ion implantation and subsequent annealing (75°C), a uniform array of nanostructures is formed on the surface of Hg(Cd)Te/Zn(Cd)Te samples. The X-ray diffraction patterns of the structurized Hg(Cd)Te/Zn(Cd)Te sample indicate the formation of polycrystalline Hg(Cd)Te phases of cubic structure with a composition x ～ 0.20 and also oxide Ag₂O in the subsurface (<100 nm) region of the host material. The observed effects of transformation of the defect-impurity system and structuring of the surface of the heteroepitaxial film of the low-energy-gap semiconductor have been explained using a deformation model.     

Effect of the spin-orbit interaction of Ni2+ ions with a triplet orbital ground state on the magnetostriction of NiFe0.5Cr1.5O4 ferrite

The magnetization σ and the longitudinal (λ_∥) and transverse (λ_⊥) magnetostrictions of the NiFe_0.5Cr_1.5O₄ ferrite containing the tetrahedral ions Ni²⁺ with the triplet orbital ground state have been investigated for the first time at a temperature of 4.2 K in fields up to 55 kOe. It is revealed that the NiFe_0.5Cr_1.5O₄ ferrite exhibits an anomalously large magnetic anisotropy (H _c=12.5 kOe) and magnetostrictions (λ_∥≈?870×10^?6 and λ_⊥≈800×10^?6). In strong fields, the magnetostrictions λ_∥ and λ_⊥ are found to be anisotropic in character; i.e., the susceptibility Δλ_∥p and Δλ_⊥p. The conclusion is drawn that the studied compound is characterized by two paraprocesses: one paraprocess in the B sublattice has an exchange nature, and the second process in the A sublattice is due to the spin-orbit interaction of Ni _A ²⁺ ions.     

The magnetostriction of aluminum substituted nickel ferrites

The room temperature magnetostriction constant λ₁₁₁ of the system NiFe_2?xAl_x0₄ is determined for 0<x<0.3. An unconventional system is used for the magnetostriction measurements. The growth, composition and saturation magnetization of the crystals are discussed. The values of x = 0 are in good agreement with those given in the literature. The saturation magnetostriction decreases with increasing aluminum content.     

Roles of local He concentration and Si sample orientation on cavity growth in amorphous silicon

(111)- and (100)-oriented Si samples were implanted with Si⁺ ions at 1 MeV to a dose of 1?×?10¹⁶?cm^?2 and with 5?×?10¹⁶ He⁺ cm^?2 at 10?keV or 50?keV and eventually annealed in the 800–1000°C temperature range. Sample characterisation was carried out by cross-section transmission electron microscopy, positron annihilation spectroscopy and nuclear reaction analysis. In addition to the formation of He bubbles at the projected range of He, bubbles were observed after solid-phase epitaxial growth (SPEG) of the embedded amorphous Si layer. The He threshold concentration required to obtain thermally stable bubbles in amorphised Si is between one and four orders of magnitude lower than in c-Si. Since bubble formation and growth take place in the a-Si phase, the interaction with SPEG during annealing was studied by considering (100) and (111) Si. Both the SPEG velocity and the resulting defects play a role on bubble spatial distribution and size, resulting in bigger bubbles in (111) Si with respect to (100) Si.     

Jahn–Teller effect and superparamagnetism in zn substituted copper-gallate ferrite

Spinel ferrite CuFe₂O₄ and solid solution of Cu_1−xZn_xFe_2−yGa_yO₄ with 0.0?x?0.5 are synthesized through the usual ceramic method. X-ray diffraction measurements confirm the presence of single-phase tetragonal structure with c/a>1for CuFe₂O₄ and compositions with x?0.1. The formation of the tetragonal phase in these samples is attributed to the presence of the cooperative Jahn–Teller Cu ion at the octahedral B-site in the spinel lattice. At the compositional parameter x?0.2, tetragonal-to-cubic transformation occurred and the lattice parameter a for the cubic unit cell is found to decrease with increasing Zn content x. ⁵⁷Fe Mössbauer measurements at 293 K for these compounds reveal superparamagnetic phase for samples with 0.0?x?0.2. In contrast, Mössbauer spectra at 12 K for these materials show well ordered spectra where, the cation distribution and the hyperfine parameters are determined.     

Ionic conductivity in tysonite-type solid solutions La1−xBaxF3−x

The ionic conductivity of single crystals of tysonite-type solid solutions La_1?xBa_xF_3?x(0?x?0.095) has been studied parallel and perpendicular to the crystallographic c axis in the temperature range 293–1300 K. Three regions can be discerned in the compositional dependence of the ionic conductivity: (i) the “pure” crystal, in which at room temperature no exchange occurs between different types of anion sites in the tysonite structure; (ii) an intermediate region(0 < x < 7 × 10^-2) which reveals changes in both the conductivity activation enthalpy and the magnitude of the conductivity; (iii) a concentrated solid-solution region (x > 7 × 10^-2), where fluoride ions interchange easily among the different anion sublattices. Diffusion coefficients calculated from ionic conductivity results, are in good agreement with those calculated from ¹⁹F NMR measurements. Using the present data, along with ¹⁹F NMR data, dielectric relaxation data and structural considerations, mechanisms governing the ionic conductivity are proposed.     

Yttrium silicide films into Si(111) — Fabrication and properties

The formation of a thin layer of hexagonal Y Si_2?x phase on a single-crystal Si(111) substrate by implantation of 195 keV Y ions with a dose of 5×10¹⁶Y ⁺/cm² at room temperature (RT) is investigated. The structural characterization of the as-implanted and annealed samples is performed using Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The results show that the orientation relationship between the Y Si_2?x layer and Si substrate is Y Si_2?x(0 0 0 1)//Si(111) and Y Si_2?x[1 1 -2 0]//Si [110].     

Analytical solution of the double-logarithmic integral equation with QCD running coupling

The analytical solution of the double-logarithmic integral equation with QCD running coupling describing small-x behaviour of the non-singlet structure function ? _NS(x,Q ²) has been found for any cut-off parameter μ. Analytical properties of the solution and a position of the right-most singularity in the complex ρ-plane which determines the asymptotics of ? _NS(x,Q ²) at small x have been studied. The asymptotical formula ? _NS(x,Q ²) = C ₁ x ^-λ1{ln^κ1(Q ²/Λ²) —ln^κ1 (μ ²/Λ²) + κ ₁ ln^κ1-1(Q ²/Λ²)[ψ(1) - ψ(λ₁)]} valid if x ? 1 and ln(Q ²/Λ²) ? 1 has been obtained where C ₁, λ₁ are constants, κ ₁ = g/λ₁, λ₁ < g = 8/(33 - 2gh _f), gh _f is a number of active flavours and ψ(ξ) denotes the digamma function.     

The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates

AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type Al_0.15Ga_0.85N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×10⁹?cm^?2 without AlN IL to the maximum of 1×10¹⁰?cm^?2 at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type Al _x Ga_1?x N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70?meV with a?10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs.