Multisaturation process in photoconducting CdS

In this paper we show that the classical theory of acoustoelectric interaction gives an alternative explanation for the multisaturations of the I–V characteristic in photoconducting CdS. Taking into account the amplification of the thermal background in off-axis directions we can explain the field dependence of the onset times for saturation and the conductivity dependence of the critical fields as well as the occurrence of four or five knees in the I–V characteristic.     

Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM,and nickel nanoparticles

Organic field-effect transistor (OFET) structures with the active layers on the basis of composite films of semiconductor polymer poly(3-hexylthiophene) (P3HT), fullerene derivatives [60]PCBM, [70]PCBM, and nickel (Ni) nanoparticles are obtained, and their optical, electrical, and photoelectrical properties are studied. It is shown that introducing Ni nanoparticles into P3HT: [60]PCBM and P3HT: [70]PCBM films leads to an increase in the absorption and to quenching of photoluminescence of the composite in the 400–600 nm spectral band due to the plasmon effect. In P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFET structures at the P3HT: [60]PCBM and P3HT: [70]PCBM concentrations of ~1: 1 and Ni concentrations of ~3–5 wt %, current–voltage (I–V) characteristics typical of ambipolar OFETs with the dominant hole conduction are observed. The charge-carrier (hole) mobilities calculated from the I–V characteristic at V_G =–10 V were found to be ~0.46 cm²/(V s) for P3HT: [60]PCBM: Ni and ~4.7 cm²/(V s) for P3HT: [70]PCBM: Ni, which means that the mobility increases if [60]PCBM in the composition is replaced with [70]PCBM. The effect of light on the I–V characteristics of P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFETs is studied.     

I–V characteristic of electronic transport through a quantum dot chain: The role of antiresonance

The I–V spectrum of electronic transport through a quantum dot chain is calculated by means of the nonequilibrium Green function technique. In such a system, two arbitrary quantum dots are connected with two electron reservoirs through leads. When the dot-lead coupling is very weak, a series of discrete resonant peaks in electron transmission function cause staircase-like I–V characteristic. On the contrary, in the relatively strong dot-lead coupling regime, stairs in the I–V spectrum due to resonance vanish. However, when there are some dangling quantum dots in the chain outside two leads, the antiresonance which corresponds to the zero points of electron transmission function brings about novel staircase characteristic in the I–V spectrum. Moreover, two features in the I–V spectrum arising from the antiresonance are pointed out, which are significant for possible device applications. One is the multiple negative differential conductance regions, and another is regarding to create a highly spin-polarized current through the quantum dot chain by the interplay of the resonance and antiresonance. Finally, we focus on the role that the many-body effect plays on the antiresonance. Our result is that the antiresonance remains when the electron interaction is considered to the second order approximation.     

Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range

We report on the temperature-dependent electrical characteristics of Er/p-InP Schottky barrier diodes. The current–voltage (I–V) and capacitance–voltage (C–V) measurements have been carried out in the temperature range of 300–400 K. Using thermionic emission (TE) theory, the zero-bias barrier height (Φ_bo) and ideality factor (n) are estimated from I–V characteristics. It is observed that there is a decrease in n and an increase in the Φ_bo with an increase in temperature. The barrier height inhomogenity at the metal/semiconductor (MS) interface resulted in Gaussian distribution of Φ_bo and n. The laterally homogeneous Schottky barrier height value of approximately 1.008 eV for the Er/p-InP Schottky barrier diodes is extracted from the linear relationship between the experimental zero-bias barrier heights and ideality factors. The series resistance (R_s) is calculated by Chenug's method and it is found that it increases with the decrease in temperature. The reverse-bias leakage current mechanism of Er/p-InP Schottky diode is investigated. Both Poole–Frenkel and Schottky emissions are described and discussed. Furthermore, capacitance–voltage (C–V) measurements of the Er/p-InP Schottky contacts are also carried out at room temperature in dark at different frequencies of 10, 100 and 1000 kHz. Using Terman's method, the interface state density is calculated for Er/p-InP Schottky diode at different temperatures.     

Theory of field emission

A serious barrier impedes the comparison between the theoretical prediction and the experimental observation in field emission because there is no way to measure the emission area. We introduce three dimensionless variables ?_J, ?? and ?? to construct a formulation for connecting directly the theoretical variables and experimental data without measuring the emission area. Based on this formulation we can analyze that the behaviors of ?_J, ?? and ?? with the voltages between the anode and the emitter to reveals the characteristics of current–voltage (I–V) curve and detect the physical properties of emitters. This formulation provides a way to understand the fundamental physics of I–V curve in field emission and to set up a map between the physical properties of emitters and the experimental I–V curve.     

Intrinsic memory characteristic of polycrystalline ZnTe film originating from Mott variable range hopping conduction

The resistive switching characteristics of Au/ZnTe/ITO structure with polycrystalline ZnTe film as resistive switching layer is investigated. Macroscopically, 100 bipolar switching cycles under the direct current (dc) voltages were carried out and the conduction states can retain for several hours. Microscopically, reading and writing operations can be achieved on ZnTe film with Au top electrode replaced by conductive Atomic Force Microscopy (c-AFM) tip. The I–V characteristic in low resistance state (LRS) is linear in the whole range of voltage. The I–V characteristic in high resistance state (HRS) is linear in the low voltage while it obeys Schottky emission in the high voltage, and Schottky barrier height is symmetric in the positive and negative voltage. During linear I–V characteristic voltage range, the electrons transport between adjacent point defects via Mott variable range hopping. The higher hopping distance and higher activation energy in HRS contribute to the higher resistance value in HRS compared with LRS. Impedance spectroscopy in HRS and LRS both behave as a semicircle, which accords with the semiconductor-like characteristic of conductive point defects. Photoluminescence (PL) spectroscopy indicates the decisive role of deep level defects in conduction. This study confirms the intrinsic resistive switching characteristic of ZnTe film and provides a new choice for intrinsic non-oxides material in nonvolatile memory application.     

Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments

A correlation between the main parameter of a solar cell, the conversion efficiency, and its dark I–V characteristic is investigated. A formula is derived that expresses an increment (decrement) of the efficiency through a decrement (increment) of the current measured at a certain voltage (here at 2.4 V). Relationships are deduced based on which six methods for passivating the sidewalls of triple-junction InGaP/GaAs/Ge heterostructures grown by metal-organic vapor-phase epitaxy are tested to see how they influence the dark I–V characteristic. The influence of different factors, such as post-growth annealing, damaging radiation, etc., on the solar cell efficiency can be estimated by taking the dark I–V characteristic.     

Bias dependence of apparent layer thickness and Moiré pattern on NaCl/Cu(001)

Bias-dependent features of the insulating NaCl layer grown on Cu(001) have been investigated by scanning tunneling microscopy/spectroscopy (STM/STS). The apparent layer thickness of the NaCl film is variable at bias voltages ranging from 2.8 to 3.2 V as well as from 4.0 to 5.0 V, and the Moiré pattern induced by NaCl–Cu lattice mismatch also shows bias dependence. The z–V (dz/dV–V) curves and dI/dV mapping measurements reveal that the resonant tunneling between the image potential states (IPSs) on Cu(001) and the Fermi level of the STM tip leads to drastic variations of these features.     

The study of structure and optoelectronic properties of ZnS and ZnO films on porous silicon substrates

ZnS and ZnO films were prepared on porous silicon (PS) substrates with the same porosity by pulsed laser deposition (PLD), and the structural, optical and electrical properties of ZnS and ZnO films on PS were investigated at room temperature by X-ray diffraction (XRD), scanning electron microscope (SEM), optical absorption measurement, photoluminescence (PL) and I–V characteristic studies. The prepared ZnS was obtained in the cubic phase along β-ZnS (1 1 1) orientation which showed a perfect match with the earlier report while ZnO films were obtained in c-axis orientation. There appeared some cracks in the surface of ZnS and ZnO films due to the roughness of PS substrates. Luminescence studies of ZnS/PS and ZnO/PS composites indicated room temperature emission in a broad, intense, visible photoluminescence band, which cover the blue emission to red emission, exhibiting intensively white light emission. Based on the I–V characteristic, ZnS/PS heterojunction exhibited the rectifying junction behavior, while the I–V characteristic of ZnO/PS heterostructure was different from that of the common diode, whose reverse current was not saturated.     

Conductive Atomic Force Microscopy (C-AFM) observation of conducting nanofilaments formation in GeSbTe phase change materials

GST (GeSbTe) thin films were deposited on glass substrates by electron beam evaporation; Ni was used as the top and bottom electrodes. The I–V (current–voltage) characteristic of the phase change memory (PCM) cell was measured; results showed an electrical threshold switching characteristic for the sample with a threshold voltage of 3.08 V. The threshold switching is attributed to the formation of conductive filaments in the amorphous matrix. Current-voltage spectra which were obtained by C-AFM show that the GST thin film switching from amorphous to the crystalline phase occurs at 1.51 V. C-AFM was used to fabricate crystalline nanoarrays on the sample surface and examine the electrical properties of arrays. In the I–V measurements by C-AFM, when the applied voltage is higher than threshold voltage, conducting nanofilaments with average sizes of 15–60 nm were formed and crystallized spots with current signals were observed. Different times of I–V spectroscopies were applied on thin films to investigate the electrical properties of films during the phase change process. C-AFM results show that as the times of I–V spectroscopies increased, the morphology of crystallized spots changed from bump to pit; the sizes of conductive nanofilaments and detected current signals increased. These results can be attributed to the energy induced by Joule heating dissipated to surrounding films increases with the increasing times of I–V spectroscopies.     

Simulation of a Detector of Visible and Near-IR Electromagnetic Radiation Based on Artificial Diamond

Technical Physics - A method for calculation of the I–V characteristic is proposed for a detector of visible and near-IR electromagnetic radiation based on artificial diamond with allowance...     

Josephson junction with two superconducting current components

The properties of a Josephson junction with the 2π- and 4π-periodic superconducting current component have been analyzed. In the range of low voltages, such a junction exhibits the 4π periodicity of the phase difference for the Majorana current amplitude much smaller than the Josephson current, which makes it possible to observe Josephson current oscillations with a fractional period for small dissipation β < 1 in the hysteresis region. The effect the 4π-periodic Majorana current component is also manifested in a change in the sequence of steps in the ladder structure emerging on the current–voltage (I–V) characteristic of the junction. We have determined the interval of external electromagnetic radiation amplitudes, in which the manifestation of the fractional Josephson effect on the I–V characteristic is most significant.     

Thermal mechanisms responsible for the irreversible degradation of superconductivity in commercial superconductors

Conditions for the irreversible propagation of thermal instabilities in commercial superconductors subjected to intense and soft cooling have been formulated. An analysis has been conducted using two types of the superconductor’s I–V characteristics, i.e., an ideal I–V characteristic, which assumes a step superconducting-to-normal transition, and a continuous I–V characteristic, which is described by a power law. The propagation rate of thermal instabilities along the superconducting composite has been determined. Calculations have been made for both subcritical and supercritical values of the current. It has been shown that they propagate along a commercial superconductor in the form of a switching wave. In rapidly cooled commercial superconductors, the steady-state rate of thermal instability propagation in the longitudinal direction can only be positive because there is no region of steady stabilization. It has been proved that, in the case of thermal instability irreversible propagation, the rise in the commercial superconductor temperature is similar to diffusion processes that occur in explosive chain reactions.     

Phase diagram of Bi up to 140 kbars

The phase diagram of Bi has been studied by resistometric techniques in the temperature range of 30 to 300°K up to pressures of 140 kbars. Using the original Bridgman phase notation, the phase transitions I–II, II–III, I–III, III–IV and V–VI were observed. Two new phases, designated VIII and IX were observed in this region. The triple points occurring between I–II–III near 29.5 kbars and 160°K, between IV–V–VIII near 55 kbars and 240°K, between V–VI–VIII near 72 kbars and 255°K and between VI–VIII–IX near 135 kbars and 250°K. Earlier measurements were adjusted to the 1970 Drickamer pressure scale and compared to the present results. A phase diagram is proposed for pressures to 140 kbars. Calculations of the volume changes and latent heats of transformation are made near the triple points I–II–III, IV–V–VIII and V–VI–VIII using the measured volume changes of Bridgman for the I–II, IV–V and V–VI transitions. The latent heat associated with the III–IV transition was calculated using the volume data of Bridgman to be less than ? 2 cal/mol.     

Synthesis and characterisation of glycine sodium nitrite crystals having non linear optical behaviour

Glycine sodium nitrite (GSNi) having non linear optical efficiency more than KDP crystal has been obtained from solutions by slow cooling technique. The crystals are found to be chemically and thermally stable with orthorhombic unit cell. The presence of wide transparency window in UV–Visible region makes GSNi suitable for opto-electronic device applications. It has second harmonic generation efficiency of 1.273 times that of standard KDP crystal. GSNi crystal belongs to soft category of materials with work hardening index of 2.33. Crystals introduced in timer circuit gave a stable output with the capacitance value of 236 pF. I–V characteristic indicates a safe operating range of 300 V/cm. GSNi is seen to behave as a normal dielectric with applied frequency and crystals exposed to light exhibit negative LDR characteristic which is attributable to space charge formation.     

Point-contact spectroscopy of electron relaxation mechanisms in semiconductors

The I–V characteristic of a tiny semiconducting channel connecting bulk electrodes is shown to have singularities arising due to phonon emission by hot electrons at energies eV = n?ω₀, where ω₀ is the optical phonon frequency and n = 1, 2, 3,…. The nonlinear part of the I–V curve provides direct information concerning the energy dependence of the elastic-scattering time of charge carriers.     

Fabrication and electrical characterization of Schottky diode based on 2-amino-4, 5-imidazoledicarbonitrile (AIDCN)

The junction characteristics of the organic compound 2-amino-4, 5-imidazoledicarbonitrile (AIDCN) on p-type silicon substrate are studied in detail. AIDCN is deposited on silicon substrate using thermal evaporator. Current–voltage (I–V) characteristic of the device is measured at room temperature. The Au/AIDCN/p-Si device shows non-linear I–V characteristic with rectification ratio of 7.2×10³ at 5 V. The electronic device parameters such as barrier height, ideality factor, and series resistance are calculated using I–V data and observed to be 0.74 eV, 3.00, and 3.73×10⁴ Ω respectively.     

Gas-discharge current in a mixture of zeolite and silicon powders

The I–V characteristics of a zeolite (clinoptilolite)-10% silicon powder mixture at different air pressures in the chamber are taken. In a constant electric field, the current is found to be stationary in contrast to pure zeolite powder, where the current decays with time. In the case of the stationary current, the I–V characteristic consists of a high-resistivity portion at low voltages and a low-resistivity portion at high voltages. The latter portion is identified as the gas-discharge current. A discharge initiation mechanism in which silicon particles play a decisive role is suggested.     

Effect of the topology of a graphene/SiC nanotip emitter on the formation of rings in high electric fields

The representation of the tunneling conductance G(T) of the “dirty” (with low concentrations of the same nonmagnetic impurities in the I layer) N–I–N junction (where N is a normal metal and I is an insulator) in the form of a sum of conductances of random quantum jumpers penetrating the disordered I layer is obtained in the low-temperature region. It is shown that the axis of the parameter δ = |ε₀ ? ε_F| giving the deviation of the energy of ε₀ the quasi-local electron state on the impurity in the I layer from the Fermi energy of εF the dirty N–I–N junction contains a series of bifurcation points, at the transition through each of which (in the direction of the increase in δ) the number of maxima on the temperature dependence G(T) increases by unity; i.e., a new maximum is “born” on the curve G(T). Numerical estimates are given for the characteristic parameters of dirty N–I–N junctions indicating the possibility of the experimental observation of at least the first of these maxima.     

Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As

A method is given to calculate liquidus-solidus phase diagrams involving quaternary III–V solid solutions of the type A_xB_{1 ? x}C_yD_{1 ? y}. The calculation treats the mixture of A and B atoms on the group III sublattice and C and D atoms on the group V sublattice as strictly regular and the quaternary liquid solution as simple. The input parameters for the calculation are obtained from existing analyses of the binary and ternary boundaries of the phase diagram.Experimental liquidus and solidus data along several Al isoconcentration curves on the 900 ° and 1000 °C isotherm surface are presented for the Al-Ga-P-As system. The liquidus data are obtained by liquid observation and saturation techniques and solidus compositions determined on self-nucleated cyrstals and on mixed crystal layers grown on GaP substrates. The experimental results are consistent with the calculated phase diagram for this system.