Thermostimulated conductivity of synthetic semiconductor diamonds doped with boron during synthesis

The properties of diamond as a new material for semiconductor electronics have been studied insufficiently at present. One of the most powerful techniques for study of impurity centers is the method of thermostimulated conductivity (TSC).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 130–132, September, 1978.In conclusion, the authors thank Yu. M. Eotner for providing the synthetic semiconductor diamond specimens for measurement.     

Current-voltage characteristics of synthetic semiconductor diamonds doped with boron during synthesis

Current-voltage characteristics (CVC) of synthetic semiconductor diamonds are presented. In certain low-resistance specimens at definite temperature intervals an N-type CVC is found. Investigations performed permit a qualitative explanation of the majority of CVC peculiarities, and determination of the boron acceptor impurity activation energy E_a = 0.36 eV.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 7–12, September, 1978.In conclusion the authors thank Yu. M. Rotner for presenting the synthetic semiconductor diamonds which were studied.     

Effect of uniaxial pressure on the Raman spectra of fluoro perovskites containing manganese with sodium or potassium

ABSTRACT

Perovskite structured mixed metal fluorides containing manganese/sodium or potassium have been synthesized in pure form by a greener precipitation route and characterized by high-resolution powder X-ray diffraction and Raman spectroscopy techniques. While all the reflections in the powder X-ray diffraction pattern of potassium manganese fluoride could be indexed in cubic symmetry with a = 4.1889 Å, sodium manganese fluoride showed reflections at positions typical of orthorhombic symmetry (Pnma space group) with a = 5.751, b = 8.008, and c = 5.548 Å. Potassium manganese fluoride in powder form showed bands at 209, 291, 386, 558, 621, and 733 cm^?1 in the Raman spectrum at room temperature. All these bands disappeared and second-order band at 1151 and 1298 cm^?1 emerged when the powders were compacted under pressure ranging between 1 and 4 tons (uniaxial). A similar change was noticed for sodium manganese fluoride in which bands at 1099, 1149, 1203, and 1286 cm^?1 were observed for the compacted samples. The response of the vibrational modes of these compounds to uniaxial pressure revealed the existence of large structural disorder in them. Additionally, the need for the extreme care to collect and interpret Raman data of polycrystalline samples of these systems has been illustrated through this study.     

Effect of pressure on Raman spectra of SnS2 single crystals

The 2H polytype of a SnS₂ layered crystal has been studied using Raman spectroscopy at pressures of up to 5 GPa in a diamond anvil cell. The Raman frequency of the intralayer mode increases linearly with increasing pressure at baric coefficients of 5.2 cm⁻¹/GPa for P<3 GPa and 3.4 cm⁻¹/GPa for P>3 GPa. This change in the baric coefficient for Raman scattering and the available data on X-ray measurements of the compressibility of 2H-SnS₂up to 10 GPa suggest that the crystal structure undergoes a transformation at about 3 GPa.     

Electronic properties of single-crystal diamonds heavily doped with boron

Single-crystal diamonds with characteristic sizes of 2–7 mm doped with boron in the concentration range 10¹⁹–10²⁰ cm^?3 have been grown by the temperature gradient method at high static pressures. The temperature dependence of the resistance R of the synthesized single crystals has been measured in the range 0.5 K < T < 297 K. An activated dependence R(T) with an activation energy of about 50 meV is observed in the range from room temperature to T ≈ 200 K. At temperatures below approximately 50 K, the temperature dependence of the conductivity for heavily doped crystals is proportional to T ^1/2, which is characteristic of degenerate semiconductors with a high number of defects.     

天然、合成红宝石的拉曼光谱分析

天然与合成宝石一直是宝石鉴定中的难题,而拉曼光谱的半高宽,即声子"寿命"可提供宝石是天然或合成的信息。论文利用BTR111-785微型近红外拉曼光谱仪对天然、合成红宝石进行测试分析,研究表明天然红宝石的半高宽均在10cm-1以上,合成红宝石的半高宽均低于10cm-1。     

Ion-beam studies of synthetic single-crystal diamonds

A surface layer of polished single-crystal diamond plates with the (100) orientation, which can be applied to planar high-frequency high-power microstructures, is investigated by means of ion-beam and X-ray methods. It is demonstrated that the diamond plates are characterized by a high degree of structural perfection and a low level of surface roughness.     

方解石高压相变的拉曼光谱研究

应用金刚石压腔结合拉曼光谱技术研究了方解石-Ⅰ在静水高压作用下相转变为方解石-Ⅲ的过程.结果表明,压力增大的过程中,方解石-Ⅰ晶体的三个拉曼特征峰均向高频移动;在1 103 MPa条件下,体系中的水介质结冰,冰点处方解石-Ⅰ晶体性质没有变化;继续加压至1 752 MPa时矿物的拉曼特征峰发生了突变,表明晶体由方解石-Ⅰ相转变为方解石-Ⅲ相中的的A型方解石;相变后矿物的拉曼特征峰显示了从矿物内部向边缘的过渡中,相变程度逐渐增大的趋势;该研究也体现了金刚石压腔结合拉曼光谱技术在定性分析矿物结构相变过程中原位测试的优势.     

Synthesis of N-type semiconductor diamonds with sulfur,boron co-doping in FeNiMnCo-C system at high pressure and high temperature

A series of diamonds with boron and sulfur co-doping were synthesized in the Fe Ni Mn Co-C system by temperature gradient growth(TGG) under high pressure and high temperature(HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra(XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 ?·cm and 760.870 cm~2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×10~5 ?·cm and 76.300 cm~2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B–S doping were acquired.     

Impurity centers in synthetic and natural diamonds with a system of electron-vibronic Lines at 418 nm in luminescence spectra

Physics of the Solid State - Analysis of the spectra of IR absorption, ESR, and luminescence of natural and synthetic diamonds with a system of electron-vibronic lines at 418 nm in the luminescence...     

Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility

We synthesized and investigated the boron-doped and boron/nitrogen co-doped large single-crystal diamonds grown under high pressure and high temperature (HPHT) conditions (5.9 GPa and 1290℃). The optical and electrical properties and surface characterization of the synthetic diamonds were observed and studied. Incorporation of nitrogen significantly changed the growth trace on surface of boron-containing diamonds. X-ray photoelectron spectroscopy (XPS) measurements showed good evident that nitrogen atoms successfully incorporate into the boron-rich diamond lattice and bond with carbon atoms. Raman spectra showed differences on the as-grown surfaces and interior between boron-doped and boron/nitrogen co-doped diamonds. Fourier transform infrared spectroscopy (FTIR) measurements indicated that the nitrogen incorporation significantly decreases the boron acceptor concentration in diamonds. Hall measurements at room temperature showed that the carriers concentration of the co-doped diamonds decreases, and the mobility increases obviously. The highest hole mobility of sample BNDD-1 reached 980 cm²·V^-1·s^-1, possible reasons were discussed in the paper.     

Effect of a fluorescing impurity on the characteristics of stimulated Raman scattering from acetone

Asymmetry in the intensities between backward and forward stimulated Raman scattered radiations (BSRS and FSRS respectively) in acetone is investigated in the presence of a fluorescing impurity (rhodamine 6G). In the case of pure acetone above a threshold pump power, BSRS becomes more intense than FSRS. On the other hand intensity of BSRS decreases with concentration of the fluorophore in solution, while that of FSRS is found to increase. It is observed that absorption saturation also affects the asymmetry between FSRS and BSRS.     

Effect of ZnS shell on the Raman spectra from CdSe nanorods

We investigated the influence of an epitaxially grown ZnS shell on the phonon spectra of CdSe nanorods of different sizes. The CdSe related Raman peaks shift with addition of a ZnS shell. The longitudinal optical phonon shifts slightly due to strain and the low‐energy shoulder shifts stronger, which can be explained within a model for surface optical phonons. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)