Interpretation of Auger depth profiles of thin SiC layers on Si

Silicon carbide thin films, prepared by carbonization of Si-wafers are analysed by Auger depth profiling. The influence of atomic mixing is simulated with a Monte Carlo model. By using mixing simulations the dependence of the two mixing parameters (width of the mixing zone and recoil depth) on ion beam energy, incidence angle and ion mass can be calculated. For comparison of the simulated data with Auger measurements an Auger electron escape depth correction is necessary. The simulated and -corrected data of several layer structures show good qualitative agreement with Auger depth profiles of thin carbonized SiC-layers.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Kinetics and mechanism of oxidation of silicon nitride bonded silicon carbide ceramic

Thermogravimetry (TG) has been used to study the oxidation of a commercial silicon nitride bonded silicon carbide (SNBSC) ceramic. The oxidation was studied in air and carbon dioxide atmospheres between 800 and 1300°C. TG/mass spectrometry (MS) shows that the silicon nitride bonding phase oxidises first. The kinetics follow a multi-stage mechanism with diffusion control. Carbon dioxide was found to be a more powerful oxidant than air at temperatures above 1050°C.     

Comparative Analysis of a Solar Control Coating on Glass by AES, EPMA, SNMS and SIMS

 A solar control coating was analysed by different methods of surface analysis with respect to the layer sequence and the composition and thickness of each sublayer. The methods used for depth profiling were Auger electron spectroscopy, electron probe microanalysis, secondary neutral mass spectroscopy and secondary ion mass spectroscopy based on MCs⁺. The structure of the coating was unknown at first. All methods found a system of two metallic Ag layers, embedded between dielectric SnO_X layers. Additionally, thin Ni-Cr layers of 1–2 nm were detected on top of the Ag layers. Thus the detected layer sequence is SnO_X/Ni-Cr/Ag/SnO_X/Ni-Cr/Ag/SnO_X/glass. The Ni:Cr ratio in the nm-thin layers could be quantified by every method, the Cr fraction corresponding to less than one monolayer. We compare the capabilities and limitations of each method in routinely investigating this solar control coating. Importance was attached to an effective investigation. Nevertheless, by combining all methods, measuring artefacts could be uncovered and a comprehensive characterisation of the system was obtained.     

AES investigations on starting powders for high performance ceramics

AES depth profiles on ceramic powders (untreated/hydrolyzed/oxidized/ (Al, Y)₂O₃ coated Si₃N₄, [BaO, SiO₂] coated Al₂O₃) are feasible on thin, homogeneous layers or m sized agglomerations prepared on an Au foil. By means of the depth profiles one can qualitatively characterize the coating around the particles. Factor analysis of the depth profiles on the differently treated Si₃N₄ powders suggests the existence of an Si₂N₂O phase on the oxidized sample.Dedicated to Professor Günther Tölg on the occasion of his 60th birthday     

SEM–EDX and SAM–AES Investigations on Rochow Contact Masses

Appropriate Rochow contact masses have been investigated by the spatial resolution techniques SEM–EDX and SAM–AES. The results gave evidence of the existence and the catalytic action of (X-ray)-amorphous copper–silicon (Cu–Si) surface species, i.e. extremely highly dispersed particles or two-dimensional species. The well-known Rochow promoter zinc seems to act as a moderator rather than as a real accelerator. It ensures a stable rate for the reaction by neutralizing the detrimental action of silicon impurities. The silicon impurities make the whole of the silicon surface reactive and in this way cause a general blockade of the silicon surface by inactive copper species. Zinc localizes the reaction. The silicon surface remains partly free, and active Cu–Si surface species can be formed by lateral diffusion of copper onto the silicon surface that is still free. © 1997 by John Wiley & Sons, Ltd.     

AES and LEED study of well‐ordered oxide film grown on Cu–9at.%Al(111)

An alloy of Cu–9at.%Al(111) has been oxidized in a low‐energy electron diffraction (LEED)/AES and a scanning AES instrument at elevated temperatures. Dosing with 1300 L of oxygen at 995 K gives rise to well‐ordered oxide layer formation on the Cu–9at.%Al alloy. The structure of the ordered oxide confirmed by LEED is ( ) R30°. The chemical state of the oxide was Al₂O₃. The morphology of the surface observed with SEM in the scanning AES instrument revealed flat oxide growth with triangular defects of the same orientation. The possible epitaxy between the alloy substrate and alumina layer has been discussed. Copyright © 2003 John Wiley & Sons, Ltd.