Structure, magneto-structural transitions and magnetocaloric properties in Ni50−xMn37+xIn13 melt spun ribbons

Melt spun Ni_50−xMn_37+xIn₁₃ (2≤x≤5) ribbons were investigated for the structure, microstructure, magneto-structural transitions and inverse magnetocaloric effect (IMCE) associated with the first-order martensitic phase transition. The influence of excess Mn in Ni site (or Ni/Mn content) on the martensite transition and the associated magnetic and magnetocaloric properties are discussed. It was found that with the increase in Mn content, the martensitic transition shifted from 325 to 240 K as x is varied from 2 to 4, and the austenite phase was stabilized at room temperature. The x=5 ribbon did not show the martensitic transition. For the x=3 ribbon, the structural and magnetic transitions are close together unlike in the x=4 ribbon in which they are far (∼60 K) apart. The zero field cooled and field cooled curves support the presence of exchange bias blocking temperature due to antiferromagnetic interactions in the ribbons. A large change in the magnetization between the martensite and austenite phases was observed for a small variation in the Ni/Mn content, which resulted in large IMCE. A large positive magnetic entropy change (ΔS_M) of 32 J/kg K at room temperature (∼ 300 K) for a field change of 5 T with a net refrigeration capacity of 64 J/kg was obtained in the Ni₄₇Mn₄₀In₁₃ ribbon.     

Magnetocaloric effect and multifunctional properties of Ni–Mn-based Heusler alloys

The studies of magnetocaloric properties, phase transitions, and phenomena related to magnetic heterogeneity in the vicinity of the martensitic transition (MT) in Ni–Mn–In and Ni–Mn–Ga off-stoichiometric Heusler alloys are summarized. The crystal structure, magnetocaloric effect (MCE), and magnetotransport properties were studied for the following alloys: Ni₅₀Mn_50−xIn_x, Ni_50−xCo_xMn₃₅In₁₅, Ni₅₀Mn_35−xCo_xIn₁₅, Ni₅₀Mn₃₅In₁₄Z (Z=Al, Ge), Ni₅₀Mn₃₅In_15−xSi_x, Ni_50−xCo_xMn_25+yGa_25−y, and Ni_50–xCo_xMn_32−yFeyGa₁₈. It was found that the magnetic entropy change, ΔS, associated with the inverse MCE in the vicinity of the temperature of the magneto-structural transition, TM, persists in a range of (125-5) J/(kg K) for a magnetic field change ΔH=5 T. The corresponding temperature varies with composition from 143 to 400 K. The MT in Ni₅₀Mn_50−xIn_x (x=13.5) results in a transition between two paramagnetic states. Associated with the paramagnetic austenite-paramagnetic martensite transition ΔS=24 J/(kg K) was detected for ΔH=5 T at T=350 K. The variation in composition of Ni₂MnGa can drastically change the magnetic state of the martensitic phase below and in the vicinity of TM. The presence of the martensitic phase with magnetic moment much smaller than that in the austenitic phase above TM leads to the large inverse MCE in the Ni₄₂Co₈Mn_32−yFeyGa₁₈ system. The adiabatic change of temperature (ΔT_ad) in the vicinity of TC and TM of Ni₅₀Mn₃₅In₁₅ and Ni₅₀Mn₃₅In₁₄Z (Z=Al, Ge) was found to be ΔT_ad=−2 K and 2 K for ΔH=1.8 T, respectively. It was observed that |ΔT_ad|≈1 K for ΔH=1 T for both types of transitions. The results on resistivity, magnetoresistance, Hall resistivity in some In-based alloys are discussed.     

Magnetic properties on shape memory alloys Ni2Mn1+xIn1−x

X-ray powder diffraction and magnetization measurements were done on the magnetic shape memory alloys Ni₂Mn_1+xIn_1−x. On the basis of the results, the magnetic phase diagram was determined for Ni₂Mn_1+xIn_1−x alloys. Magnetization measurements make clear that the excess Mn atoms, which substitute for In sites, are coupled ferromagnetically to the ferromagnetic manganese sublattices. A magnetic phase diagram of Ni₂Mn_1+xIn_1−x alloys is discussed qualitatively on the basis of the interatomic dependence of the exchange interactions.     

Crystal structure and magnetic properties of MnxBi100−x (x=48, 50, 55 and 60) compounds

Mn_xBi_100−x (x=48, 50, 55 and 60) alloys were prepared by the induction melting technique, and subjected to melt spinning and subsequent ball milling. XRD shows that the as-milled powders were mainly composed of LTP MnBi. Increasing melt spinning speed and reducing annealing treatment time can restrain the segregation of Mn from MnBi liquid during the peritectic reaction, which increases the LTP MnBi content. High energy ball milling results in the coercivity increase of MnBi powders. With increasing milling time, the coercivity increases initially and then decreases gradually. After ball milling for 4 h, the coercivity of the Mn_xBi_100−x powders is 11.4 kOe for x=48 and 14.8 kOe for x=55. The optimal composition of Mn₄₈Bi₅₂ with more LTP has an M_2.2 T of 49.98 emu/g and an M_r of 33.57 emu/g.     

Band-edge exciton transitions temperature in multiple stacked self-assembled (In1−xMnx)As quantum dot arrays

Multiple stacked self-assembled (In_1−xMn_x)As quantum-dot (QD) arrays were grown on GaAs (100) substrates by using molecular-beam epitaxy with a goal of producing (In_1−xMn_x)As QDs with a semiconductor phase and a high ferromagnetic transition temperature (T_c). Atomic force microscopy, magnetic force microscopy, high-resolution transmission electron microscopy, and energy dispersive X-ray fluorescence measurements showed that crystalline multiple stacked (In_0.84Mn_0.16)As with symmetric single-domain particle were formed on GaAs substrates. Near-field scanning optical spectroscopy spectra at 10 K for the (In_0.84Mn_0.16)As multiple stacked QDs showed that the band-edge exciton transitions were observed. The magnetization curve as a function of the magnetic field at 5 and 300 K indicated that the multiple stacked (In_0.84Mn_0.16)As QDs were ferromagnetic, and the magnetization curve as a function of the temperature showed that the T_c was as high as 400 K. These results provide important information on the optical and magnetic properties for enhancing the T_c of (In_1−xMn_x)As-based nanostructures.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

Magnetocaloric effects in Ni-Mn-X based Heusler alloys with X=Ga, Sb, In

The Mn-based Heusler alloys encompass a rich collection of useful materials from highly spin-polarized systems to shape memory alloys to magnetocaloric materials. In this work we have summarized our studies of magnetostructural transitions from paramagnetic austenite to ferromagnetic martesite phases at TMC in Ni₂MnGa-based alloys (Ni₂Mn_0.75Cu_0.25-xCo_xGa, Ni₂Mn_0.70Cu_0.30Ga_0.95Ge_0.05, Ni₂Mn_1-xCu_xGa, Ni_2+xMn_1-xGa, and Ni₂Mn_0.75-xCu_xGa), and martensitic transitions from the ferromagnetic austenite to the martesite state in off-stoichiometric Ni-Mn-(In/Sb) Heusler alloys. The phase transition temperatures and respective magnetic entropy changes (ΔS) depend on composition in these systems and have been determined from magnetization measurements in the temperature interval 5-400 K, and in magnetic fields up to 5 T. It is shown that, depending on the composition and doping scheme the “giant” ΔS=40-60 J/(kgK) (for a field change of 5 T) can be observed in the temperature range (300-360 K) for the Ga-based alloys. The interplay between or coupling of the various transitions in Ni₂Mn(Mn,X) systems with X=Sb and In leads to exchange bias effects, giant magnetoresistance, and both inverse and “normal” magnetocaloric effects.     

Phase transitions and the magnetocaloric effect in Mn rich Ni–Mn–Ga Heusler alloys

In Mn rich polycrystalline Heusler alloys, Ni₅₀Mn_25+−xGa_25−x, prepared by Arc melting, it is found that the structural/first-order magnetic transition temperature T_m increases as the Mn content increases. The Curie temperature T_c is higher than that of Ni rich alloys (Ni_50+xMn_25−xGa₂₅ ) of the same series, and is less affected by composition x. Magnetic entropy change of |ΔS_M| also increases as Mn content increases, while behaviour of the field dependence of ΔS_M is similar to that of single crystal Ni_52.6Mn_23.1Ga_24.3.     

Ferromagnetism and antiferromagnetism in Ni2+x+yMn1−xAl1−y alloys

The magnetic behavior of Ni_2+xMn_1−xAl alloys around the stoichiometric 2:1:1 composition was investigated with several experimental techniques. The results of low-temperature magnetization measurements indicate that a competition mechanism between ferromagnetism and antiferromagnetism is expected in off-stoichiometric alloys. Although the Curie temperature is strongly dependent on the composition, the saturation magnetization has an unsystematic variation for deviations from the stoichiometric Ni₂MnAl alloy. A reentrant-spin-glass behavior is observed below 50 K.     

Magnetic transitions in Ni1−xMox and Ni1−xWx disordered alloys

We present a mean-field study of the magnetic phase diagram of Ni_1−xMo_x and Ni_1−xW_x alloys. The pair energies that enter the internal energy part of the free energy are obtained from a first-principles calculation. We try to understand why spin-glass phase is not observed in these alloys.     

The effect of Co ion implantation on Ge1−xMnx films

Ge_1−xMn_x (x = 0, 0.013, 0.0226, 0.0339, 0.0565, 0.0678, 0.0904, 0.113) films prepared by magnetron sputtering at 773 K had a Ge cubic structure except for x = 0.1130. Co ion implantation into these films can effectively prevent the formation of a second phase. Both single-doped and co-doped samples were ferromagnetic at room temperature. The d-d exchange interaction between the interstitial Mn (MnT) and the substituted Mn (Mn_Ge) resulted in ferromagnetism in the sputtered films. Since Co ion implantation destroyed the Mn_T-Mn_Ge-Mn_T complex, the saturated magnetization decreased. Hall measurements revealed that the Co ion implanted films were n-type semiconductors, and the anomalous Hall Effect (AHE) suggested the ferromagnetism was carrier-mediated in the implanted films.     

Structural and magnetic properties of Mg(In2−xMnx)O4 system

We synthesized the Mn-doped Mg(In_2−xMn_x)O₄ oxides with 0.03?x?0.55 using a solid-state reaction method. The X-ray diffraction patterns of the samples were in a good agreement with that of a distorted orthorhombic spinel phase. Their lattice parameters and unit-cell volumes decrease with x due to the substitution of the smaller Mn³⁺ ions to the larger In³⁺ ions. The undoped MgIn₂O₄ oxide presents diamagnetic signals for 5 K?T?300 K. The M(H) at T=300 K reveals a fairly negative-sloped linear relationship. Neither magnetic hysteresis nor saturation behavior was observed in this parent sample. For the Mn-doped samples, however, positive magnetization were observed between 5 and 300 K even if the x value is as low as 0.03. The mass susceptibility enhances with Mn content and it reaches the highest value of 1.4×10⁻³ emu/g Oe (at T=300 K) at x=0.45. Furthermore, the Mn-doped oxides with x=0.06 and 0.2, respectively, exhibit nonlinear magnetization curves and small hysteretic loops in low magnetic fields. Susceptibilities of the Mn-doped samples are much higher than those of MnO₂, Mn₂O₃ oxides, and Mn metals. These results show that the oxides have potential to be magnetic semiconductors.     

The large low-field magnetic entropy changes in Ni43Mn46Sn11−xSbx alloys

A series of Ni₄₃Mn₄₆Sn_11−xSb_x (x=0, 1, and 3) alloys were prepared by an arc melting method. The martensitic transition shifts to higher temperature with the increasing Sb content. The isothermal magnetization curves and Arrott plots around martensitic transition temperatures show a typical metamagnetic behavior. Under a low applied magnetic field of 10 kOe, large magnetic entropy changes around the martensitic transition temperature are 10.4, 8.9, and 7.3 J/kg K, for x=0, 1, and 3, respectively. The origin of the large magnetic entropy changes and potential application for Ni₄₃Mn₄₆Sn_11−xSb_x alloys as working substances in magnetic refrigeration are discussed.     

Magnetic properties of Mn-rich Rh2Mn1+xSn1−x Heusler alloys

X-ray powder diffraction and magnetization measurements have been carried out on Rh₂Mn_1+xSn_1−x (0≤x≤0.3) alloys. The alloys, which crystallize in the L2₁ structure, were found to exhibit ferromagnetic behavior. The lattice constant a at room temperature decreases with increasing x, whereas the Curie temperature T_C decreases linearly. At 5 K the magnetic moment per formula unit first increases with increasing x and then saturates for x≥0.2. The experimental results are discussed in terms of the influence of the Mn-Mn exchange interactions between the Mn atoms on the Sn and Mn sites.     

X-ray photoelectron study of Sn1−xMnxTe semimagnetic semiconductors

X-ray photoelectron (XPS) studies of core-levels in Sn_1−xMn_xTe (x < 0.1) semimagnetic semiconductors have been performed. The spectra were acquired under UHV conditions from the clean (as-cleaved or in-situ scraped) crystal surface. The single-phase NaCl structure of the alloys studied was verified by X-ray diffraction (XRD). The structure of Sn 3d and Te 3d core-levels in SnMnTe was found fully consistent with that of SnTe. Remarkable qualitative similarity of the Mn 2p spectrum of Sn_1−xMn_xTe (x = 0.09) with the case of zinc-blende MnTe [R.J. Iwanowski, M.H. Heinonen, E. Janik, Chem. Phys. Lett. 387 (2004) 110] has been shown: (1) the same binding energies (BEs) of the main contributions to the Mn 2p_3/2 line, related to Mn²⁺ state of the bulk MnTe bond; (2) occurrence of low BE component in the Mn 2p spectrum, indicative of clean-surface species containing reduced-valence Mn ions (i.e. Mn^q+, where 0 < q < 2); (3) strong satellites of the 2p_3/2 (Mn²⁺ related) parent lines. In SnMnTe, the highest intensity ratio of the satellite to main peak (ever reported for Mn 2p photoelectron spectrum) was revealed; this was interpreted in terms of the so-called charge-transfer model.     

Effect of Fe substitution on magnetocaloric effect in La0.7Sr0.3Mn1−xFexO3 (0.05≤x≤0.20)

We have studied the effect of Fe substitution on magnetic and magnetocaloric properties in La_0.7Sr_0.3Mn_1−xFe_xO₃ (x=0.05, 0.07, 0.10, 0.15, and 0.20) over a wide temperature range (T=10-400 K). It is shown that substitution by Fe gradually decreases the ferromagnetic Curie temperature (T_C) and saturation magnetization up to x=0.15 but a dramatic change occurs for x=0.2. The x=0.2 sample can be considered as a phase separated compound in which both short-range ordered ferromagnetic and antiferromagnetic phases coexist. The magnetic entropy change (−ΔS_m) was estimated from isothermal magnetization curves and it decreases with increase of Fe content from 4.4 J kg⁻¹ K⁻¹ at 343 K (x=0.05) to 1.3 J kg⁻¹ K⁻¹ at 105 K (x=0.2), under ΔH=5 T. The La_0.7Sr_0.3Mn_0.93Fe_0.07O₃ sample shows negligible hysteresis loss, operating temperature range over 60 K around room temperature with refrigerant capacity of 225 J kg⁻¹, and magnetic entropy of 4 J kg⁻¹ K⁻¹ which will be an interesting compound for application in room temperature refrigeration.     

The structural and magnetic properties of Ni2Mn1−xBxGa Heusler alloys

The influence of the substitution of manganese by boron on the crystal structure and magnetic properties of Ni₂Mn_1−xB_xGa Heusler alloys with 0?x?0.5 has been investigated using X-ray diffraction, thermal expansion, resistivity, and magnetization measurements. The samples with concentrations x<0.25 were found to be of single phase and belonged to the cubic L2₁ crystal structure at room temperature. Crystal cell parameters of the alloys decreased from 5.830 to 5.825 Å with increasing boron concentration (x) from 0 to 0.25. The alloys were ferromagnetically ordered at 5 K and the saturation magnetization decreased with increasing boron concentration. The ferromagnetic ordering and structural transition temperatures for 0?x?0.3 have been observed and the phase (x−T) diagram of the Ni₂Mn_1−xB_xGa system was constructed. The phase (x−T) diagram indicates that the ground state of Ni₂Mn_1−xB_xGa alloys belongs to ferromagnetic martensitic, premartensitic, and austenitic phases in x?0.12, 0.12<x?0.18, and 0.18<x?0.3, respectively. The relative influence of cell parameters and electron concentrations on the phase diagram is discussed.     

Nanoscratch study of Zn1−xMnxO heteroepitaxial layers

We investigated the nanotribological properties of Zn_1−xMn_xO epilayers (0 ≤ x ≤ 0.16) grown by molecular beam epitaxy (MBE) on sapphire substrates. The surface roughness and friction coefficient (μ) were analyzed by means of atomic force microscopy (AFM) and hysitron triboscope nanoindenter techniques.The nanoscratch system gave the μ value of the films ranging from 0.17 to 0.07 and the penetration depth value ranging 294-200 nm when the Mn content was increased from x = 0 to 0.16. The results strongly indicate that the scratch wear depth under constant load shows that higher Mn content leads to Zn_1−xMn_xO epilayers with higher shear resistance, which enhances the Mn-O bond. These findings reveal that the role of Mn content on the growth of Zn_1−xMn_xO epilayers can be identified by their nanotribological behavior.     

Martensitic transformation and magnetocaloric properties of Sn doping Mn-Ni-Ga alloys

The effects of Sn addition on phase transformation behavior and magnetocaloric properties of Mn₅₀Ni₂₅Ga_25−xSn_x (x=0, 0.1, 0.5, 1 and 2 at%) alloys were investigated in this work. The results show that the addition of Sn reduces the structural transformation temperatures. It is found that the second phase exists in the austenite matrix of the as-casted alloys at room temperature. After being annealed at 1073 K for 48 h, the precipitates totally soluted into the matrix. Magnetization measurements indicate that the saturation magnetizations of the alloys increase significantly with increase in Sn contents. In addition, the ΔM/ΔS obviously increases with increase in the Sn contents, implying the higher efficiency shift of the martensitic transformation temperature under the magnetic field.     

BiFeO3/Zn1−xMnxO bilayered thin films

BiFeO₃/Zn_1−xMn_xO (x = 0-0.08) bilayered thin films were deposited on the SrRuO₃/Pt/TiO₂/SiO₂/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2P_r ∼ 121.0-130.6 μC/cm² was measured for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO (x = 0.04) bilayer exhibits a highest M_s value of ∼15.2 emu/cm³, owing to the presence of the magnetic Zn_0.96Mn_0.04O layer with an enhanced M_s value.