Magnetic phase transitions in Nd7Rh3 single crystal

Magnetic phase transitions in rare earth intermetallic compound Nd₇Rh₃ have been investigated using a single crystal. Measurement results of magnetization, magnetic susceptibility, specific heat, and electrical resistivity reveal that Nd₇Rh₃ has two magnetic phase transitions at T_N=34 K, T_t2=9.1 K and a change of the magnetic feature at T_t1=6.8 K in the absence of an external magnetic field. Antiferromagnetic orderings exist in all the three magnetic states; a large magnetic anisotropy between the c-axis and the c-plane is observed. In the magnetic phase below T_t2, an irreversible field-induced magnetic phase transition takes place in the c-plane; after removing external magnetic field, a coexistence state of ferro- and antiferromagnetic ordering or a ferrimagnetic state having a remanent magnetization M_R is stabilized. The M_R decays to a certain value for several hours after the first process; a magnetic field cooling effect was also observed in the c-plane below T_t2. In the antiferromagentic state above T_t2, the irreversibility disappears and an ordinary antiferromagnetic state takes place. As the origin of this phenomenon, a kind of martensitic structural transition that is observed in Gd₅Ge₄ can be considered.     

Effect of oxygen pressure on microstructure and magnetic properties of strontium hexaferrite (SrFe12O19) film prepared by pulsed laser deposition

The effects of oxygen pressure during deposition on microstructure and magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films grown on Si (100) substrate with Pt (111) underlayer by pulsed laser deposition have been investigated. X-ray diffraction pattern confirms that the films have c-axis perpendicular orientation. The c-axis dispersion (Δθ₅₀) increases and c-axis lattice parameter decreases with increasing oxygen pressure. The films have hexagonal shape grains with diameter of 150-250 nm as determined by atomic force microscopy. The coercivities in perpendicular direction are higher than those in in-plane direction, which shows the films have perpendicular magnetic anisotropy. The saturation magnetization and anisotropy field for the film deposited in oxygen pressure of 0.13 mbar are comparable to those of the bulk strontium hexaferrite. Higher oxygen pressure leads to the films having higher coercivity and squareness. The coercivity in perpendicular and in-plane directions of the film deposited in oxygen pressure of 0.13 mbar are 2520 Oe and 870 Oe, respectively.     

High Curie temperature in B-site ordered Sr2CrWO6 epitaxial thin films

Epitaxial and c-axis oriented double perovskite Sr₂CrWO₆ thin films were prepared on SrTiO₃ (100) and LaAlO₃ (100) substrates by pulsed-laser deposition. Structural, magnetic and transport properties were found to be sensitive to the gas conditions employed during the deposition. A small amount of oxygen along with Ar during the deposition was found to be essential for B-site ordering; such films displayed lattice parameters close to the bulk value and display ferromagnetic metallic behavior. The Curie temperature observed above 500 K in these films is higher than bulk Sr₂CrWO₆ samples. Films grown without oxygen were observed to have long c-parameter and no B-site ordering; they were non-magnetic and semiconducting.     

Growth of single-phase c-axis aligned La1.2Ca1.8Mn2O7 films on SrTiO3 (001)

We report the growth of single phase, c-axis aligned thin films of La_1.2Ca_1.8Mn₂O₇ on SrTiO₃ (001) substrates using a controlled pulsed laser deposition method. In this method, constraint of epitaxy is utilized to stabilize the Ruddlesdon-Popper (RP) phase of La_1.2Ca_1.8Mn₂O₇. Oxygen ambient pressure and the rate of deposition play a very important role in influencing the epitaxial growth as well as maintaining phase purity of the material. The oxygen pressure inside the deposition chamber was very precisely controlled and varied during the layer-by-layer growth of the film. Films, prepared by our method, show excellent electrical and magnetic characteristics with a sharp metal-insulator transition at T_M-I=90 K, closely followed by a magnetic transition at T_C=91 K.     

Thickness effect in Pb(Zr0.2Ti0.8)O3 ferroelectric thin films grown by pulsed laser deposition

Epitaxial Pb(Zr_,Ti)O₃ (PZT) thin films with thicknesses in the range of 50-200 nm and with 0.2 Zr/(Zr + Ti) ratio, were grown by pulsed laser deposition (PLD).The substrates used for PLD deposition are single crystalline 0.5% Nb-doped (1 0 0) SrTiO₃ (STON). SrRuO₃ (SRO) thin films were deposited as bottom and top electrodes in order to have minimum structural misfit, to insure on one side high quality growth, and on the other side to minimize the influence of the extended structural defects. Structural and electrical characterization was performed. The epitaxial PZT films are c-axis oriented and have an average roughness of 0.4 nm. The ferroelectric behavior was proved in all investigated films by the presence of the hysteresis loops and by the butterfly shape of the capacitance-voltage (C-V) characteristics. The ferroelectricity was present even in the samples with relative high leakage currents, down to a thickness of 50 nm. These results are essential when small thickness is needed for miniaturization of ferroelectric devices using PZT.     

Effect of Bi substitution on the magnetic and dielectric properties of epitaxially grown BaFe0.3Zr0.7O3−δ thin films on SrTiO3 substrates

The structural, dielectric and magnetic properties of single crystalline Ba_1−xBi_xFe_0.3Zr_0.7O_3−δ (x=0.0-0.29) thin films have been studied. The pseudotetragonal epitaxial thin films were obtained by pulsed laser-beam deposition (PLD) on (0 0 1) SrTiO₃ (STO) single-crystal substrates. The Bi substitution for the Ba ions up to an extent of x=0.18 caused a slight improvement in the leakage current properties, as well as an enhancement of the apparent dielectric constant. The saturation magnetization of the films was significantly decreased following Bi substitution. These changes were thought to be related to the increase in oxygen deficiencies in the films. The effect of the Bi substitution on the dielectric and magnetic properties was analyzed in conjunction with the change in valence value of the Fe ions.     

Magnetic and crystallographic study of Tb0.75Y0.25Co3B2

Tb_0.75Y_0.25Co₃B₂ was studied as a function of temperature by neutron powder diffraction, ac susceptibility and SQUID magnetization measurements. The solid solution, which is of hexagonal symmetry and is paramagnetic at 300 K, undergoes a magnetic Co–Co ordering transition at ∼150 K, and a second magnetic Tb–Tb ordering transition at ∼17 K. The latter induces a spin-reorientation transition, in which the magnetic axis rotates from the c-axis toward the basal plane. The component of the magnetic axis, which is perpendicular to c, leads to a crystal symmetry reduction from hexagonal to monoclinic. The observed magnitude of the magnetic moment of the Tb ion is 1.5 μ_B, unusually small relative to the free ion and parent compound (TbCo₃B₂) values. These magnetic and crystal properties are discussed and compared with what was previously published for the parent compound.     

Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi1.5Zn1.0Nb1.5O7 thin films prepared by pulsed laser deposition

The influence of substrate temperature on structural and dielectric properties of cubic pyrochlore Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin films prepared by pulsed laser deposition process has been investigated. BZN thin films were deposited on Pt/Ti/SiO₂/Si(1 0 0) substrate and in situ annealed at 700 °C. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of BZN thin films. The films exhibit a cubic pyrochlore structure in the substrate temperature range from 550 °C to 700 °C and at the annealing temperature of 700 °C. With further increase of substrate temperature to 750 °C, the phases of Bi₂O₃, BiNbO₄ and Bi₅Nb₃O₁₅ can be detected in the XRD pattern due to the Zn loss. The dielectric constant and loss tangent of the films deposited at 650 °C are 192 and 6 × 10⁻⁴ at 10 kHz, respectively. The tunability is 10% at a dc bias field of 0.9 MV/cm.     

Crystal field investigation on the magnetic properties of Yb in Yb(CF3SO3)3·9H2O

Ytterbium tri-fluoromethanesulfonate (YbTFMS) single crystals are prepared from the slow evaporation of the aqueous solution of YbTFMS and the principal magnetic susceptibility perpendicular to the c-axis of the hexagonal crystal (χ_⊥) is measured from 300 K down to 13 K. Principal magnetic anisotropy Δχ(=χ_∥−χ_⊥) is measured from 300 K down to 80 K which provides principal magnetic susceptibility parallel to the c-axis (χ_∥) down to 80 K. Very good theoretical simulation of the observed magnetic properties of YbTFMS has been obtained using one electron crystal field (CF) analysis having C_3h site symmetry. No signature of ordering effect in the observed magnetic data is noticed down to the lowest temperature (13 K) attained, indicating the inter-ionic interaction to be of predominantly dipolar type. The calculated g-values are found to be g_∥=2.67 and g_⊥=2.51, respectively. CF analysis provides the electronic specific heat which gives two Schottky anomalies in its thermal variation down to ∼13 K. The temperature dependences of quadrupole splitting and hyperfine heat capacity are studied from the necessary information obtained from the CF analysis.     

Structural and electrical properties of (Na0.85K0.15)0.5Bi0.5TiO3 thin films deposited on LaNiO3 and Pt bottom electrodes

(Na_0.85K_0.15)_0.5Bi_0.5TiO₃ thin films were deposited on LaNiO₃(LNO)/SiO₂/Si(1 0 0) and Pt/Ti/SiO₂/Si(1 0 0) substrates by metal-organic decomposition, and the effects of bottom electrodes LNO and Pt on the ferroelectric, dielectric and piezoelectric properties were investigated by ferroelectric tester, impedance analyzer and scanning probe microscopy, respectively. For the thin films deposited on LNO and Pt electrodes, the remnant polarization 2P_r are about 22.6 and 8.8 μC/cm² under 375 kV/cm, the dielectric constants 238 and 579 at 10 kHz, the dielectric losses 0.06 and 0.30 at 10 kHz, the statistic d_33eff values 95 and 81 pm/V. The improved piezoelectric properties could make (Na_1−xK_x)_0.5Bi_0.5TiO₃ thin film as a promising candidate for piezoelectric thin film devices.     

Effects of indium doping on the superconducting properties of YBa2Cu3Oy sintered compounds and thin films

We investigated the effects of indium doping on the superconducting properties of YBCO sintered samples and thin films. In₂O₃-doped YBCO and YBa₂Cu_3−xIn_xO_y sintered samples showed a gradual decrease in the critical temperature (T_c) with increasing indium content; however, a T_c value above 80 K was maintained even up to 30 vol.% addition and x = 0.4, respectively. Ba₃Cu₃In₄O₁₂ was detected by X-ray diffractometry and energy-dispersive X-ray spectroscopy as a reaction product for both sintered samples. The normalized J_c under a magnetic field of 0.1 T showed a maximum at x = 0.3. Indium-doped YBCO films prepared by pulsed laser deposition showed a similar dependence of T_c on indium content as the sintered samples.     

Anisotropic properties of self-flux grown LiB3O5 single crystals

In this paper, we report the existence of anisotropic behavior along the crystallographic axes in optical, electrical and thermal properties of lithium tri borate, a recently developed vacuum UV-NLO material. The variation of refractive index with the wavelength along the crystallographic axes was investigated by prism coupling method. The results of impedance spectroscopy measurement reveal the presence of a strong anisotropy in ionic conductivity and dielectric constant along the axes and also show the super-ionic conduction behavior along the c-axis with the activation energy of Δ∼0.20 eV. A thermo-mechanical study in the temperature range of 300-900 K indicates the existence of a strong variation in the linear thermal expansion coefficient (positive value along the a-axis, and negative value along the c-axis) of LiB₃O₅ crystals.     

Correlation between structural and mechanical properties of PbTiO3 thin films grown by pulsed-laser deposition

Tetragonal lead titanate (PbTiO₃, PT) thin films are grown on (1 0 0) MgO substrate by pulsed-laser deposition (PLD) for expected applications in integrated optics. The realisation of outstanding and reliable devices into integrated circuits requires sufficient mechanical resistance despite that the obtained PT films display interesting waveguiding properties associated with low optical losses. Two mechanical properties characteristic of elasticity and hardness of PT films are studied. The elastic modulus (E or Young's modulus) and the hardness (H) are measured by the nanoindentation technique. These mechanical properties are correlated to the crystalline quality of PT/MgO thin films. The films show epitaxial relationship with the MgO substrate and the orientation of crystallites perpendicularly to the surface substrate may be the consequence of a growth process along c-axis, a-axis or both. Differences on curves plotting hardness and elastic modulus as a function of indentation depth are observed as the curves are less dispersed for the films mainly c-axis oriented.     

Irreversible magnetovolume effect in Nd7Rh3 single crystal

Magnetovolume effect in Nd₇Rh₃ single crystal has been studied by measuring the magnetostriction as a function of external magnetic field at 4.2 K. An irreversible magnetovolume effect having a negative remanent volume magnetostriction was observed when the external magnetic field was applied along the b-axis. The irreversible magnetostrictive effect takes place in the longitudinal magnetostriction along the b-axis. The remanent magnetostriction along the b-axis relaxes after removing external magnetic field for several hours and equilibrium state is stabilized.     

Specific heat of EuIn2P2 at high magnetic fields

We have carried out specific heat measurements on EuIn₂P₂ at high magnetic fields perpendicular to the c-axis in the hexagonal crystal structure in order to understand its thermal properties. The temperature dependence of the specific heat exhibits a clear λ-type anomaly due to a magnetic transition at , indicating that the magnetic transition is of second-order. The λ-type anomaly becomes markedly broader with increasing the magnetic field. This remarkable field-dependence is consistent with the results of previous magnetization measurements which suggest that Eu²⁺ magnetic moments align ferromagnetically perpendicular to the c-axis below T_C. In addition, a hump in the specific heat is observed around 7 K, which can be ascribed to the Zeeman splitting of the Eu²⁺ multiplet by internal magnetic fields.     

The crystalline orientation and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films mediated by the intermediate layer of LaNiO3

c-Axis-oriented and (1 1 7)-oriented Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films are successfully controlled by the intermediate layer of LaNiO₃ (LNO) with chemical solution deposition (CSD), respectively. X-ray diffraction (XRD) demonstrates that the structure and orientation of LNO thin films have a strong effect on the orientation of BLT thin films. Scanning electron microscopy suggests that BLT thin films on LNO electrode exhibit crack-free, uniform size grains and dense microstructure. A crystalline orientation dependent remanent polarization is observed in BLT thin films, and it is found that the remanent polarization (2P_r) of (1 1 7)-oriented films is larger than that of c-axis-oriented films. Our research directly demonstrates that the vector of the main spontaneous polarization in these layered perovskite materials (BLT) is along a-axis.     

Magnetotransport properties of epitaxial Pr0.5Ca0.5MnO3 films grown by a solution technique

Epitaxial Pr_0.5Ca_0.5MnO₃ films have been synthesized on (0 0 1) SrTiO₃ substrate using a chemical solution deposition technique and two-step post-annealing process. The zero field resistivity of the films shows semiconducting behavior and a characteristic of charge ordering is observed at 230 K. The resistivity of the 10 nm film did not show any effect with the magnetic field. However, melting of charge ordering was observed for the 120 nm film at an applied magnetic field of 4 T. Large decrease in the resistivity of the 120 nm film (<100 K) resulted in magnetoresistance of nearly −100% at 75 K.     

Magnetic properties of NdAu2Ge2

Physical properties of NdAu₂Ge₂, crystallising with the tetragonal ThCr₂Si₂-type crystal structure, were investigated by means of magnetic, calorimetric and electrical transport measurements as well as by neutron diffraction. The compound exhibits antiferromagnetic ordering below T_N=4.5 K with a collinear magnetic structure of the AFI-type. The neodymium magnetic moments are parallel to the c-axis and amount to 1.04(4) μ_B at 1.5 K. The observed magnetic behaviour is strongly influenced by crystalline electric field effect.     

Study on dielectric and magnetic properties of Ho3Fe5O12 ceramics

Ho₃Fe₅O₁₂ ceramics with garnet structure were prepared by the solid-state reaction method. The results revealed the existence of Fe²⁺ ions have intensive influence on dielectric and magnetic properties of Ho₃Fe₅O₁₂ ceramics, which could be further confirmed by oxygen treatment. With a magnetic field lower than 10 kOe, the ME coefficient reaches 33 ps m⁻¹ at room temperature. And the ME coupling was further verified by dielectric anomaly near Néel temperature.     

Antiferromagnetic order and spin glass behavior in Dy2CuIn3

The magnetic properties of the intermetallic compound Dy₂CuIn₃ have been investigated. Ac and dc-susceptibility measurements indicate an onset of antiferromagnetic ordering at T_N=19.5 K and an additional frequency dependent transition at T_ds∼9 K. Neutron diffraction studies confirm the ordered transition at 19.5±1 K. The magnetic unit cell can be described by the propagation vector k=(0.25,0.25,0) with the magnetic moment μ=2.63(4)μ_B/Dy³⁺ parallel to the c-axis. Nevertheless, neutron diffraction reveals no additional magnetic phase transition around or below 9 K, which suggests that, at lower temperatures, a spin glass state may be formed in coexistence with the antiferromagnetic mode as a result of frustration and the antagonism between ferromagnetic and antiferromagnetic exchange interactions.