Studying the crystallization behavior of the Se85S10Sb5 chalcogenide semiconducting glass by DSC and X-ray diffraction

Crystallization kinetics of the Se₈₅S₁₀Sb₅ chalcogenide glassy alloy is studied by differential scanning calorimeter (DSC) non-isothermally. The glassy state of the as-prepared sample and the crystalline phases of the heat treated sample are characterized using X-ray diffraction. The glass transition activation energy E_g is found to be 65.2±0.8 kJ/mol and the crystallization activation energies for the first and the second crystallization peaks (E_c1 and E_c2) are found to be 70±0.8 and 85.2±0.8 kJ/mol, respectively. The determined kinetic parameters have made it possible to postulate the type of crystal growth exhibited in the crystallization process. The phases at which the alloy crystallizes after the thermal process have been identified by X-ray diffraction. The diffractogram of the transformed material indicates the presence of nanocrystallites of Sb₂Se₃, Se-S and Se, with a remaining additional amorphous matrix.     

Structural features of natural and acids modified chrysotile nanotubes

The structural features of the natural chrysotile have been studied by transmission electron microscopy, scanning electron microscopy, energy-dispersive X-ray spectrometry, thermogravimetric and low-temperature nitrogen adsorption techniques. The chrysotile fibers are present as nanotubes of cylindrical morphology of various forms (rectilinear cylinders, cylinders with cup-like ends, tube twins, cylinder-in-cylinder and cone-in-cone tubes) with the outer diameters of 15-30 nm and the inner ones of 2-6 nm. The surface areas of the raw and the acid leached chrysotile samples obtained by nitrogen adsorption are 15.3 and 63.6 m²/g with the average pore diameter 9.8 and 3.9 nm, respectively. The inner and the outer surfaces of the chrysotile nanotubes are evaluated by the geometric method as 16 and 80 m²/g. The thermogravimetric analysis reveals two main phases of mass loss associated with dehydration and dehydroxylation (with two overlaying steps) processes. The first phase is attributed to the dehydration reaction at low temperature range 293-450 K with activation energy in the range 22-32 kJ/mol. The second phase occurs between 798 and 985 K with activation energy 249-298 kJ/mol for the raw sample and 130-146 kJ/mole for the acid treated one.     

On the mechanism of the zircon-reidite pressure induced transformation

We report first principles results of a detailed investigation directed to elucidate mechanistic aspects of the zircon-reidite phase transition in ZrSiO₄. The calculated thermodynamic boundary is located around 5 GPa, and the corresponding thermal barrier, estimated from temperatures at which the transition is observed at zero and high pressure, is 133 kJ/mol. Under a martensitic perspective, we examine two different transition pathways at the thermodynamic transition pressure. First, the direct, displacive-like, tetragonal I4₁/a energetic profile is computed using the c/a ratio as the transformation parameter, and yields a very high activation barrier (236 kJ/mol). Second, a quasi-monoclinic unit cell allows us to characterize a transition path from zircon (β=90^°) to reidite (β=114.51^°) with an activation barrier of around 80 kJ/mol at β=104^°. This energy is somewhat lower than our previous estimation and supports the reconstructive nature of the transformation at the thermodynamic transition pressure.     

Effect of oxygen on the hydrogenation properties of magnesium films

The effect of magnesium oxide on the magnesium and hydrogen desorption properties of magnesium films have been investigated. We find that by capping metallic magnesium films with oxide overlayers the apparent desorption energy of magnesium is increased from 146 kJ/mol to 314 kJ/mol. The results are discussed in light of previous investigations of ball-milled magnesium powders.     

The adsorption of ethylene on Au/Pd(1 1 1) alloy surfaces

The adsorption of ethylene on gold-palladium alloys formed on a Pd(1 1 1) surface is investigated using a combination of temperature-programmed desorption (TPD) and reflection absorption infrared spectroscopy (RAIRS). Various alloy compositions are obtained by depositing four monolayers of gold on a clean Pd(1 1 1) surface and annealing to various temperatures. For gold coverages greater than ∼0.7, ethylene adsorbs primarily on gold sites, desorbing with an activation energy of less than 55 kJ/mol. At gold coverages between ∼0.5 and ∼0.7, ethylene is detected on palladium sites in a π-bonded configuration (with a σ-π parameter of ∼0.1) desorbing with an activation energy of between ∼57 and 62 kJ/mol. Further reducing the gold coverage leads to an almost linear increase in the desorption activation energy of ethylene with increasing palladium content until it eventually reaches a value of ∼76 kJ/mol found for ethylene on clean Pd(1 1 1). A corresponding increase in the σ-π parameter is also found as the gold coverage decreases reaching a value of ∼0.8, assigned to di-σ-bonded ethylene as found on clean Pd(1 1 1).     

UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric

An evaluation of a low temperature method (∼400 °C) for synthesis of nitrogen incorporated hafnia gate dielectric has been reported. This method is based on metal film growth in ammonia ambient and subsequent oxidation under ultraviolet (UV) irradiation. X-ray photoelectronic spectroscopy confirmed the presence of nitrided interface layer with a thickness of ∼12 ?. Equivalent oxide thickness values of around 11.5 ? and leakage current densities lower than 1 × 10⁻⁴ A/cm² at an operation voltage (−1 V) were achieved. The post deposition ultraviolet oxidation process was performed to check the interface oxidation resistance. The interface growth rate showed that as the interface bonding characteristics changed from Si-N to Si-O predominant bonding system of nitrogen incorporated films, the activation energy for oxygen diffusion changed from 18.0 kJ/mol to 9.8 kJ/mol and the activation energy of undoped hafnia films was 2.3 kJ/mol in every growth region.     

Investigation of the structural transformations in the Al-Li-Cu-Mg (8090) alloy

q =803 K) have been investigated via the Vickers microhardness measurements, scanning electron microscopy and differential scanning calorimetry. On the basis of Kissinger’s analytical equation of the DSC thermograms, the overall activation energies associated with the transformation processes are evaluated. The activation energy associated with the formation of the GPB zones and δ’ phase is determined as 82.433 kJ/mol. Whereas the energy of their dissolution is 139.78 kJ/mol. The activation energy associated with the formation of the S’ phase is determined as 106.88 kJ/mol. In addition, the microstructural examination of the samples after various aging temperatures revealed that the resultant precipitates are intergranular. Received: 27 September 1996/Accepted: 20 January 1997     

Low pressure chemical vapor deposition of niobium coating on silicon carbide

Nb coatings were prepared on a SiC substrate by low pressure chemical vapor deposition using NbCl₅. Thermodynamic calculations were performed to study the effect of temperature and partial pressure of NbCl₅ on the final products. The as-deposited coatings were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive spectroscopy. The Nb coatings are oriented and grow in the preferred (2 0 0) plane and (2 1 1) plane, at 1173 K and 1223-1423 K, respectively. At 1123-1273 K, the deposition is controlled by the surface kinetic processes. The activation energy is found to be 133 kJ/mol. At 1273-1373 K, the deposition is controlled by the mass transport processes. The activation energy is found to be 46 kJ/mol. The growth mechanism of the chemical vapor deposited Nb is also discussed based on the morphologies and the deposition rates.     

Adsorption of carbon monoxide Au/Pd(1 0 0) alloys in ultrahigh vacuum: Identification of adsorption sites

The adsorption of carbon monoxide is studied on Au/Pd(1 0 0) alloys by means of reflection-absorption infrared spectroscopy (RAIRS) and temperature-programmed desorption (TPD). The alloy was formed by adsorbing a four-monolayer thick gold film on a Pd(1 0 0) substrate and by heating to various temperatures to form alloys with a range of palladium coverages. The alloy was characterized using X-ray photoelectron spectroscopy and the composition of the outermost layer measured using low-energy ion scattering spectroscopy. CO adsorbs on palladium bridge sites only for palladium coverages greater than 0.5 monolayers (ML) suggesting that next-nearest neighbor sites are preferentially populated by palladium atoms. CO adsorbs on atop palladium sites and desorbs at ∼350 K corresponding to a desorption activation energy of ∼117 kJ/mol. However, at lower palladium coverages, these sites are not occupied and CO desorption states are detected 170 and 112 K corresponding to desorption activation energies of ∼53 kJ/mol and ∼35 kJ/mol, respectively, for these states. It is suggested that these states are due to a restructuring of the surface to form low-coordination gold sites that obscure the atop palladium site.     

Oxidation kinetics of thin copper films and wetting behaviour of copper and Organic Solderability Preservatives (OSP) with lead-free solder

The oxide formation on thin copper films deposited on Si wafer was studied by XPS, SEM and Sequential Electrochemical Reduction Analysis SERA. The surfaces were oxidized in air with a reflow oven as used in electronic assembly at temperatures of 100 °C, 155 °C, 200 °C, 230 °C and 260 °C. The SERA analyses detected only the formation of Cu₂O but the XPS analysis done for the calibration of the SERA equipment proved also the presence of a CuO layer smaller than 2 nm above the Cu₂O oxide. The oxide growth follows a power-law dependence on time within this temperature range and an activation energy of 33.1 kJ/mol was obtained. The wettability of these surfaces was also determined by measuring the contact angle between solder and copper substrate after the soldering process. A correlation between oxide thickness and wetting angle was established. It was found that the wetting is acceptable only when the oxide thickness is smaller than 16 nm. An activation energy of 27 kJ/mol was acquired for the spreading of lead free solder on oxidized copper surfaces.From wetting tests on copper surfaces protected by Organic Solderability Preservatives (OSP), it was possible to calculate the activation energy for the thermal decomposition of these protective layers.     

Adsorption of cyclohexadiene, cyclohexene and cyclohexane on Pt(1 1 1)

The adsorption of 1,3-cyclohexadiene, 1,4-cyclohexadiene, cyclohexene and cyclohexane on Pt(1 1 1) was studied using ab initio density functional theory. For 1,3-cyclohexadiene three adsorption modes were distinguished: bridge 1,2-di-σ/3,4-π, hollow 1,4-di-σ/2,3-π and bridge 1,4-di-σ/2,3-π with adsorption energies of −155, −147 and −75 kJ/mol, respectively. Three stable adsorption modes were also identified for 1,4-cyclohexadiene: bridge quadra-σ, hollow di-σ/π and bridge di-π with adsorption energies of −146 kJ/mol, −142 kJ/mol and −88 kJ/mol, respectively. Cyclohexene was found to adsorb in six modes: 4 di-σ and 2 π-adsorption modes. The preferred configuration was found to be boat di-σ with an adsorption energy of −81 kJ/mol. The three other di-σ adsorption modes have comparable adsorption energies, ranging from −64 to −69 kJ/mol. Molecular strain and CPt bonding energies are used to elucidate stability trends. Cyclohexane is found to adsorb only at the hollow site whereby the axial hydrogen atoms are positioned over surface Pt-atoms with an adsorption energy of −37 kJ/mol. The calculations correctly predict the weakening of the axial CH bonds and provide a possible explanation for the large shift in the vibrational frequencies.     

Kinetics of cation distribution in non-stoichiometric nickel gallate spinel

Cations in the spinel structure are distributed over sites of tetrahedral and octahedral coordination. The cation distribution and its kinetics in non-stoichiometric nickel gallate spinel were studied by high-temperature optical spectroscopy combined with the temperature-jump relaxation technique. It is found that up to 1200 °C the optical absorption spectra of the spinel are dominated by ligand field transitions of Ni²⁺ ions on octahedral sites. The kinetics of cation site-exchange were investigated from 850 to 1100 °C by monitoring the temporal evolution of the absorbance due to Ni²⁺ ions in octahedral sites after sudden changes in temperature. The temperature dependence of cation kinetics shows two regimes, one below and one above about 950 °C with activation energies of about 230 kJ/mol and 60 kJ/mol, respectively. Due to sample preparation, the low-temperature activation energy corresponds to an extrinsic vacancy migration regime. The activation energy of kinetics in the upper temperature regime is discussed in connection with the increasing reactivity of the optical absorber at high temperatures.     

Sulfur poisoning of the CO adsorption on Co(0 0 0 1)

CO adsorption on a sulfur covered cobalt surface at 185 K has been studied using XPS, TDS, LEED, and WF measurements. As in the case of CO adsorption on the clean Co(0 0 0 1) surface, CO adsorbs and desorbs molecularly and no dissociation was observed. The saturation coverage of CO decreases linearly from 0.54 ML to 0.27 ML when the S pre-coverage increases to 0.25 ML. The WF increased during CO adsorption, but did not reach the value obtained for CO adsorption on the clean surface. The smaller work function change is explained by the reduced adsorption of CO on the sulfur-precovered surface. A reduction in the activation energy of desorption for CO from 113 kJ/mol to 88 kJ/mol was observed indicating weaker bonding of the CO molecules to the surface. The behavior of the CO/S/Co(0 0 0 1) system was explained by a combination of steric and electronic effects.     

A new method to study the crystallization or chemical reaction kinetics using thermal analysis technique

In this work, a new method to study the transformation kinetics is introduced. With this method, the activation energy, E_c, for crystallization (phase transition or chemical reaction), the pre-exponential coefficient of effective overall reaction rate, k_o, and the reaction order, n, can be determined. No approximation has been used in this method. This method can be used for isothermal and non-isothermal study. It is deduced from Avrami's equation without any approximation. This new method has been tested to study the amorphous-crystalline transformation kinetics under isothermal and non-isothermal conditions in the context of glassy selenium. The source of error is discussed. The calculated values of E_c, under isothermal and non-isothermal conditions are 75.3±2.5 and 79.4±2.3 kJ/mol, respectively. The predominant crystallization mechanism of the amorphous phase of glassy selenium in isothermal or non-isothermal conditions is one-dimensional growth. The deduced values of k_o were found to be 19.4±0.9 and 20.8±0.7 s⁻¹ for isothermal and non-isothermal conditions, respectively. Resulting values of the parameter, n, are compared with values obtained from other known methods used to study the reaction kinetics in thermal analyses. The difference in the results obtained with this method and the results obtained with other known methods is acceptable or lie within the experimental error range.     

Crystallization of D2O thin films on Ru(0 0 1) surfaces

The phase conversion of amorphous solid water (ASW) to crystalline ice (CI) has been investigated in the very thin (∼10 monolayers) film regime on a Ru(0 0 1) surface. We analyze the converted CI fraction with the Avrami model, and recognize that one-dimensional CI growth occurs, which can be contrasted to the three-dimensional CI growth generally established in the thick (≥50 monolayers) film regime. We evaluate activation energy for the ASW crystallization to be about 1.0 eV. We suggest that the ASW crystallization is not influenced by the substrate even near the substrate-ice interface.     

Crystallization kinetics study of Pb4.3Se95.7 chalcogenide glass using DSC technique

Differential scanning calorimetry (DSC) technique was used to study the kinetics of amorphous to crystalline transformation in Pb_4.3Se_95.7 chalcogenide glass. Non-isothermal measurements were performed at different heating rates (5-60 K/min). The activation energy of crystallization was determined by analyzing the data using Matusita et al. method. A strong heating rate dependence of the activation energy was observed. The isoconversional methods of Kissinger-Akahira-Sunose (KAS) and Vyazovkin confirm that the activation energy of crystallization is not constant but varies with the degree of crystallization and hence with temperature. This variation indicates that the transformation from amorphous to crystalline phase in Pb_4.3Se_95.7 is a complex process involving different mechanisms of nucleation and growth.     

Isothermal crystallization in Ce70Ga6Cu24 bulk metallic glass

The isothermal crystallization behaviors in a newly developed CeGaCu bulk metallic glass have been investigated through the classic differential scanning calorimeter(DSC) method. It is found that the apparent activation energy(Ea) strongly depends on the fraction(x) of isothermal crystallization. Johnson-Mehl-Avrami(JMA) formula was used to analyze the mechanism of crystallization and the obtained Avrami exponent(n) was discovered to show an obvious correlation with the crystallization fraction x. With the help of the relation between Ea and n, the nucleation and growth activation energies, En and Eg, were estimated to be 214–304 kJ/mol and 91 kJ/mol, respectively. This result suggests that the main energy barrier against crystallization in the present glass should be the nucleation of nucleates, rather than the growth of crystals. Such a large En is also believed to be responsible for the good glass forming ability of the CeGaCu alloy.     

Kinetics of Isothermal and Nonisothermal Crystallization of Poly(ethylene oxide) (PEO) in PEO/Fatty Acid Blends

In this work, isothermal and nonisothermal crystallization kinetics of poly(ethylene oxide) (PEO) and PEO in PEO/fatty acid (lauric and stearic acid) blends, that are used as thermal energy storage materials, was studied using differential scanning calorimetry (DSC) data. The Avrami equation was adopted to describe isothermal crystallization of PEO and nonisothermal crystallization was analyzed using both the modified Avrami approach and Ozawa method. Avrami exponent (n) for PEO crystallization was in the range 1.08–1.32 (10–90% relative crystallinity), despite of spherulites formation, while for PEO in PEO/fatty acid blends n was between 1.61 and 2.13. Hoffman and Lauritzen theory was applied to calculate the activation energy of nucleation (K_g) – the lowest value of K_g was observed for pure PEO, despite of heterogeneous nucleation of fatty acid crystals in PEO/fatty acid blends. For nonisothermal crystallization of PEO in PEO/lauric acid (1:1 w/w) and PEO/stearic acid (1:3 w/w) blends, secondary crystallization occurred and values of the Avrami exponent were 2.8 and 2.0, respectively. The crystallization activation energies of PEO were determined to be ?260 kJ/mol for pure PEO, ?538 kJ/mol for PEO/lauric acid blend, and ?387 kJ/mol for PEO/stearic acid blend for isothermal crystallization and ?135,6 kJ/mol, ?114,5 kJ/mol, and ?92,8 kJ/mol, respectively, for nonisothermal crystallization.     

Adsorption of Pb on NiAl(1 1 0): energetics and structure

The adsorption of Pb onto a NiAl(1 1 0) single crystal surface at 300 K has been studied by Auger electron spectroscopy (AES), Low energy electron diffraction (LEED), molecular beam/surface scattering and single crystal adsorption calorimetry (SCAC). AES indicates a Stranski-Krastanov growth mode, i.e., Pb initially grows on NiAl(1 1 0) two-dimensionally until the first layer completes at 0.89 ML, where a superstructure is observed by LEED, followed by 3D islanding. Measurements of the Pb gas that does not stick indicate that Pb sticks on NiAl(1 1 0) with an initial probability of 0.99. The initial heat of adsorption of Pb on NiAl(1 1 0) is 249 ± 10 kJ/mol. Due to the repulsive interactions between Pb adatoms, the heat of adsorption decreases within the first layer to a value identical to the heat of sublimation of bulk Pb (195 kJ/mol), where it remains at higher coverages. This first application of adsorption calorimetry on such a thick sample (75 μm versus 0.2-8 μm previously) demonstrates that adsorption calorimetry can be extended to a wider range of surfaces, since this thickness can be achieved with nearly any single crystal material by simple mechanical thinning.     

Segregation of Sn and Sb in a ternary Cu(1 0 0)SnSb alloy

Surface segregation studies of Sn and Sb in Cu(1 0 0)-0.14 at.% Sn-0.12 at.% Sb ternary alloy, have been done by making use of Auger Electron Spectroscopy. The method of Linear Temperature Ramp (LTR) was employed, whereby the sample was heated and cooled linearly at a constant rate. The positive heating rate showed both a kinetic segregation profile, as well as a narrow equilibrium segregation region, at higher temperatures. The equilibrium segregation profile was extended by cooling the sample. Sn was first to segregate to the surface due to its higher diffusion coefficient, mainly from a smaller activation energy E_Sn. Sb, due to its higher segregation energy, eventually replaced Sn from the surface. The modified Darken model was used to simulate the profile yielding the following segregation parameters: D_o(Sn) = 6.3 × 10⁻⁶ m²/s, D_o(Sb) = 2.8 × 10⁻⁵ m²/s; E_Sn = 175.4 kJ/mol, E_Sb = 186.3 kJ/mol; , ; Ω_Cu-Sn = 3.4 kJ/mol, Ω_Cu-Sb = 15.9 kJ/mol and Ω_Sn-Sb = −5.4 kJ/mol.