消磁场对纳米铁磁线磁畴壁动力学行为的影响

为了实现基于磁畴壁运动的自旋电子学装置, 掌握磁畴壁动力学行为是重要争论之一.研究了在外磁场驱动下L-型纳米铁磁线磁畴壁的动力学行为. 通过微磁学模拟,在各种外磁场的驱动下考察了纳米铁磁线磁畴壁的动力学特性; 在较强外磁场的驱动下, 在不同厚度纳米线上考察了纳米线表面消磁场对磁畴壁动力学行为的影响. 为了进一步证实消磁场对磁畴壁动力学的影响, 在垂直于纳米线表面的外磁场辅助下分析了磁畴壁的动力学行为变化. 结果表明, 随着纳米线厚度和外驱动磁场强度的增加, 增强了纳米线表面的消磁场的形成, 使得磁畴壁内部自旋结构发生周期性变化, 导致磁畴壁在纳米线上传播时出现Walker崩溃现象. 在垂直于纳米线表面的外磁场辅助下, 发现辅助磁场可以调节消磁场的强度和方向. 这意味着利用辅助磁场可以有效地控制纳米铁磁线磁畴壁的动力学行为.     

Universal magnetic domain wall dynamics in the presence of weak disorder

The motion of elastic interfaces in disordered media is a broad topic relevant to many branches of physics. Field-driven magnetic domain wall motion in ultrathin ferromagnetic Pt/Co/Pt films can be well interpreted within the framework of theories developed to describe elastic interface dynamics in the presence of weak disorder. Indeed, the three theoretically predicted dynamic regimes of creep, depinning, and flow have all been directly evidenced in this model experimental system. We discuss these dynamic regimes and demonstrate how field-driven creep can be controlled not only by temperature and pinning, but also via interactions with magnetic entities located inside or outside the magnetic layer. Consequences of confinement effects in nano-devices are briefly reviewed, as some recent results on domain wall motion driven by an electric current or assisted by an electric field. Finally new theoretical developments and perspectives are discussed.     

On the steady motions of a flat domain wall in a ferromagnet

A new derivation is presented of Walker's exact solution to Gilbert equation, a solution which mimicks the travelling-wave motion of a flat domain wall at 180^°. It is shown that a process during which the working of the applied magnetic field exactly compensates dissipation (the Walker condition) exists both under the constitutive circumstances considered in the standard Gilbert equation and when either the internal free-energy or the dissipation, or both, are generalized by the introduction of higher-gradient terms; but that such a process cannot solve the generalized Gilbert equation. It is also shown that, when dry-friction dissipation is considered and a suitable magnetic field is applied, the associated Gilbert equation has a Walker-type solution mimicking a flat wall, at 90^° this time, which however does not satisfy the Walker condition. Received 16 November 2001     

Heat and mass transfer of MHD convective boundary layer flow past a stretching porous wall embedded in a porous medium

The hydromagnetic convective boundary layer flow past a stretching porous wall embedded in a porous medium with heat and mass transfer in the presence of a heat source and under the influence of a uniform magnetic field is studied. Exact solutions of the basic equations of motion, heat and mass transfer are obtained after reducing them to nonlinear ordinary differential equations. The reduced equations of heat and mass transfer are solved using a confluent hypergeometric function. The effects of the flow parameters such as a suction parameter (N), magnetic parameter (M), permeability parameter (K _p ), wall temperature parameter (r), wall concentration parameter (n), and heat source/sink parameter (Q) on the dynamics are discussed. It is observed that the suction parameter appears in the boundary condition ensuring the variable suction at the surface. Transverse component of the velocity increases only when magnetic field strength exceeds certain value, but the thermal boundary layer thickness and concentration distribution increase for all values. Results presented in this paper are in good agreement with the work of the previous author and also in conformity with the established theory.     

Concept of the field-driven domain wall motion memory

In this paper, the concept of field-driven domain wall motion memory is presented. It is confirmed that a domain is shifted with a carefully designed non-uniform field by micromagnetic simulations. The shift of a domain—a bit—can be established by the motion of two domain walls to the same direction and the same distance. In order to get a better understanding of the domain wall motion under the non-uniform transverse magnetic field, we investigate the motion of the transverse Néel-type domain wall by micromagnetic simulations and the collective coordinate approach. The validity of the equation of motion for the domain wall is confirmed by the micromagnetic simulations as functions of the gradient of the non-uniform field, the saturation magnetization, and the Gilbert damping parameter α.     

Experimental detection of domain wall propagation above the Walker field

The domain wall (DW) velocity above the Walker field drops abruptly with increasing magnetic field, because of the so-called Walker breakdown, where the DW moves with a precessional mode. On applying the higher field, the DW velocity again starts to increase gradually. We report the DW propagation around this local minimum regime in detail, investigated through the time-resolved electrical detection technique, with a magnetic tunnel junction. Just above the Walker field, we succeeded in detecting the precessional motion of the DW in a real-time regime, while a different mode appeared around the local minimum of the DW velocity.     

Domain wall motion in perpendicular anisotropy nanowires with edge roughness

We study field-driven domain wall (DW) motion in nanowires with perpendicular magnetic anisotropy using finite element micromagnetic simulations. Edge roughness is introduced by deforming the finite element mesh, and we vary the correlation length and magnitude of the roughness deformation separately. We observe the Walker breakdown both with and without roughness, with steady DW motion for applied fields below the critical Walker field H(c), and oscillatory motion for larger fields. The value of H(c) is not altered in the presence of roughness. The edge roughness introduces a depinning field. During the transient process of depinning, from the initial configuration to steady DW motion, the DW velocity is significantly reduced in comparison to that for a wire without roughness. The asymptotic DW velocity, on the other hand, is virtually unaffected by the roughness, even though the magnetization reacts to the edge distortions during the entire course of motion, both above and below the Walker breakdown. A moving DW can become pinned again at some later point ('dynamic pinning'). Dynamic pinning is a stochastic process and is observed both for small fields below H(c) and for fields of any strength above H(c). In the latter case, where the DW shows oscillatory motion and the magnetization in the DW rotates in the film plane, pinning can only occur at positions where the DW reverses direction and the instantaneous velocity is zero, i.e., at the beginning or in the middle of a positional oscillation cycle. In our simulations pinning was only observed at the beginnings of cycles, where the magnetization is pointing along the wire. The depinning field depends linearly on the magnitude of the edge roughness. The strongest pinning fields are observed for roughness correlation lengths that match the domain wall width.     

Phenomenology of current-induced dynamics in antiferromagnets

We derive a phenomenological theory of current-induced staggered magnetization dynamics in antiferromagnets. The theory captures the reactive and dissipative current-induced torques and the conventional effects of magnetic fields and damping. A Walker ansatz describes the dc current-induced domain-wall motion when there is no dissipation. If magnetic damping and dissipative torques are included, the Walker ansatz remains robust when the domain wall moves slowly. As in ferromagnets, the domain-wall velocity is proportional to the ratio between the dissipative torque and the magnetization damping. In addition, a current-driven antiferromagnetic domain wall acquires a net magnetic moment.     

Current-induced domain wall motion with adiabatic and nonadiabatic spin torques in magnetic nanowires

We investigate current-driven domain wall (DW) propagation in magnetic nanowires in the framework of the modified Landau-Lifshitz-Gilbert equation with both adiabatic and nonadiabatic spin torque (AST and NAST) terms. By employing a simple analytical model, we can demonstrate the essential physics that any small current density can drive the DW motion along a uniaxial anisotropy nanowire even in absence of NAST, while a critical current density threshold is required due to intrinsic anisotropy pinning in a biaxial nanowire without NAST. The DW motion along the uniaxial wire corresponds to the asymptotical DW oscillation solution under high field/current in the biaxial wire case. The current-driven DW velocity weakly depends on the NAST parameter β in a uniaxial wire and it is similar to the β = α case (α: damping) in the biaxial wire. Apart from that, we discuss the rigid DW motion from both the energy and angular momentum viewpoints and point out some physical relations in between. We also propose an experimental scheme to measure the spin current polarization by combining both field- and current-driven DW motion in a usual flat (biaxial) nanowire.     

Angular dependence of shot noise in the presence of Rashba spin–orbit coupling in semiconductor spintronics junctions

We investigate spin-dependent current and shot noise, taking into account the Rashba spin–orbit coupling (RSOC) effect in double diluted magnetic semiconductor (DMS) barrier resonant tunneling diodes. The calculation is based on an effective mass approach. The magnetization of DMS is calculated by the mean-field approximation in low magnetic field. The spin-splitting of DMS depends on the sp–d exchange interaction. We also examine the dependence of transport properties of CdTe/CdMnTe heterostructures on applied voltage and relative angle between the magnetization of two DMS layers. It is found that the RSOC has great different influence on the transport properties of tunneling electrons with spin-up and spin-down, which have different contributions to the current and the shot noise. Also, we can see that the RSOC enhances the spin polarization of the system, which makes the nanostructure a good candidate for new spin filter devices. Thus, these numerical results may shed light on the next applications of quantum multilayer systems and make them a good choice for future spintronics devices.     

Controlled domain wall motion by current into patterned-U Ni80Fe20 wires

The current-induced domain wall motion was observed experimentally in the case of the domain wall trapped at the semicircular arc within the U shape Ni₈₀Fe₂₀ wire. The measurement of the current-induced domain wall motion was achieved by adding a biased field before switching field and a critical current density was measured. We found two magnetic domain structures in the U pattern. At zero fields, the vortex domain wall nucleated at the semicircular arc of the U pattern. Continuous magnetic state without wall was investigated in near-switching field.     

Domain wall dynamics driven by spin transfer torque and the spin-orbit field

We have studied current-driven dynamics of domain walls when an in-plane magnetic field is present in perpendicularly magnetized nanowires using an analytical model and micromagnetic simulations. We model an experimentally studied system, ultrathin magnetic nanowires with perpendicular anisotropy, where an effective in-plane magnetic field is developed when current is passed along the nanowire due to the Rashba-like spin-orbit coupling. Using a one-dimensional model of a domain wall together with micromagnetic simulations, we show that the existence of such in-plane magnetic fields can either lower or raise the threshold current needed to cause domain wall motion. In the presence of the in-plane field, the threshold current differs for positive and negative currents for a given wall chirality, and the wall motion becomes sensitive to out-of-plane magnetic fields. We show that large non-adiabatic spin torque can counteract the effect of the in-plane field.     

Stress dependence of the domain wall dynamics in the adiabatic regime

In this work, we determine the domain wall velocity in the low field region and study the domain dynamics in as-cast and annealed bi-stable amorphous glass-covered Fe_77.5Si_7.5B₁₅ microwires. In particular, from the relation between the domain wall velocity and magnetic field in the adiabatic regime, the power-law critical exponent β, the critical field H₀ and the domain wall damping η were obtained. It has been verified that the main source of domain wall damping is the eddy current and spin relaxation, both with a strong relation with the magnetoelastic energy. This energy term is changed by the axial applied stress, which, by its time, modifies the damping mechanisms. It was also verified that the domain wall damping terms present different behavior at low (mainly eddy currents) and high applied stress (spin relaxation).     

Microstructure, magnetic and magnetoimpedance properties in electrodeposited NiFe/Cu and CoNiFe/Cu wire with thiourea additive in plating bath

Magnetic thin films of NiFe and CoNiFe alloys were electrodeposited from three different deposition baths onto copper wires of 100-μm diameter. The magnetic and magnetoimpedance (MI) properties of the samples along with their microstructure were investigated as a function of thiourea additive concentrations (C_T) in the plating bath. For all intermediate frequencies, the MI ratio increased with thiourea concentration in plating bath up to a critical concentration of 80 mg/l and then decreased considerably. The change in MI with thiourea concentration in electrodeposition bath was attributed to the grain size reducing action of thiourea, which in turn enhances the soft magnetic properties of the films. At higher concentration of thiourea, the sulfur inclusion increased the magnetic softness and MI value enhanced considerably. The origin of MI lies in the combined effect of domain wall motion and spin rotation, which contributes to permeability. Inductance spectroscopy (IS) was used to evaluate the magnetic characteristic of the samples by modeling coated wires in terms of equivalent electrical circuit; namely parallel LR (inductance and resistance) circuit in series with series LR circuit. The domain wall motion was found to be greatly affected by thiourea addition in the bath, which was revealed through the study of variation of these circuit parameters. The domain wall motion thereby affects the magnetic softness of samples, which is reflected in the MI enhancement.     

Dynamics of magnetic domain wall motion after nucleation: dependence on the wall energy

The dynamics of magnetic domain wall motion in the FeNi layer of a FeNi/Al2O3/Co trilayer has been investigated by a combination of x-ray magnetic circular dichroism, photoelectron emission microscopy, and a stroboscopic pump-probe technique. The nucleation of domains and subsequent expansion by domain wall motion in the FeNi layer during nanosecond-long magnetic field pulses was observed in the viscous regime up to the Walker limit field. We attribute an observed delay of domain expansion to the influence of the domain wall energy that acts against the domain expansion and that plays an important role when domains are small.     

Classical dependence of the domain wall velocity on the magnetic field in garnet ferrite films with orthorhombic magnetic anisotropy

The dependence of the domain wall velocity V on the acting magnetic field H is investigated for bismuth-containing single-crystal garnet ferrite films with orthorhombic magnetic anisotropy. It is shown that this dependence includes both the initial linear portion and a saturation portion and exhibits a complex behavior. This behavior is explained within the model of domain wall motion with spin wave radiation.     

Tunneling conductance study of a metal-superconductor junction in the presence of Rashba spin orbit coupling

The tunneling conductance for a junction device consisting of a normal metal and a singlet superconductor is studied with Rashba spin orbit coupling (RSOC) being present in the metallic lead and the interface separating the two regions via an extended Blonder-Tinkham-Klapwijk (BTK) formalism. Interesting interplay between the RSOC and a number of parameters that have experimental significance, and characterize either the junction or the superconducting leads, such as the barrier transparency, quasiparticle lifetime, Fermi wavevector mismatch, an in-plane magnetic field and their effects on the tunneling conductance are investigated in details for both a s-wave and a d-wave superconductor. In an opaque barrier, in presence of a quasiparticle lifetime, a Fermi wavevector mismatch or an external in-plane magnetic field, RSOC enhances the conductance corresponding to low biasing energies, that is, at energies lesser than the superconducting gap, while the reverse is noted for energies exceeding the magnitude of the gap. Further, there are exciting anomalies noted in the conductance spectrum for the d-wave gap which can be understood by incorporating the interplay between the superconducting gap and the angle of incident of the charge carriers.     

Improved simulation of domain wall bowing in metallic laminations using a new spline model

After a critical review of earlier calculations of the bowed shape of domain walls in eddy current limited motion, a more refined numerical technique for such calculations is developed. The shape of the wall is approximated by a continuous linear spline function rather than by discontinuous segments. As a peeliminary application the shape and eddy current drag of a domain wall spanning an ideal lamination and in steady state motion are calculated for all integral values of reduced wall speed u between 1 and 50. (Here u = 8VM²D²?π³γ?, V is the velocity of the wall along a sheet of thickness D and resistivity ?, γ is its specific surface energy density and 2M is the change in magnetization it effects). The mobility obeys the equation $\text{μ = (2.016 ± 0.003)(??MD)u}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ for 8 ≤ nu ≤ 60 in excellent agreement with earlier calculations. No evidence for inst ability was encountered although at u = 15 the wall shape is reliably determined and bowed well beyond Carr's criterion. The results do suggest, however, that at some value of u between 15 and 50 the wall shape may become slightly re-entrant so that it can no longer be accurately represented as a single valued function of depth in the lamination.     

Theory of retardation of magnetic domain walls in rhombic magnetic materials

We calculate the retardation of a magnetic soliton describing a magnetic domain wall by using the generalized phenomenological theory of relaxation. We show that in this theory, based on the real dynamical symmetry of magnetic materials, the dissipation function has a different structure for high and low wall velocities. Finally, we calculate the viscous force of the wall in the Walker model and show that certain features, not discussed in the literature, emerge even when the generalized theory is applied to this simple model. In particular, the dependence of the viscous friction force on the wall velocity may be highly nonlinear and regions of unstable motion may appear. Zh. éksp. Teor. Fiz. 111, 158–173 (January 1997)