Evidence for the spin-dependent scattering of conduction electrons on Mn2+ ions in Hg1−xMnxTe and Cd1−xMnxSe mixed crystals

Changes in the resistivity of Hg_1?xMn_xTe and Cd_1?xMn_xSe mixed crystals associated with paramagnetic resonance of the Mn²⁺ ions have been observed at liquid helium temperature in a strong magnetic field. The effect was recorded by monitoring the submillimeter radiation induced photoconductivity in a swept magnetic field. An increase in the resistivity associated with EPR of the Mn²⁺ ions is interpreted in terms of the spin- dependent scattering of electrons on magnetic impurities, the spins of which are selectively depolarised by means of paramagnetic resonance. Some additional effects influencing the experiments are also discussed.     

NiP:Mn as a potential magnetic contacting material to Cd1−xMnxTe

Injection of spin-polarized current into spintronic devices is a challenge to the semiconductor physicists and technologists. II-VI compound semiconductors can act as the spin aligner on the top of GaAs light emitting diode. However, II-VI compound semiconductor like Cd_1−xMn_xTe is still suffering from contacting problem. Application of electroless deposited magnetic NiP:Mn contact would enhance efficient current injection into Cd_1−xMn_xTe than the standard gold contact. A technique for electroless deposition of NiP:Mn on Cd_1−xMn_xTe have been described here. The electronic and magnetic properties of the contact material NiP:Mn and the contact performance of NiP:Mn relative to evaporated gold have been evaluated. The contact fulfills the requirements of resistivity and ferromagnetism for application to Cd_1−xMn_xTe.     

Structural and photoluminescence properties of thermally evaporated Cd1−xMnxS nano-crystalline films

Thin films of Cd_1−xMn_xS (0≤x≤0.5) were formed on glass substrates by resistive vacuum thermal evaporation. All the films were deposited at 300 K and the films were annealed at 373, 473 and 573 K for 1 h in a vacuum of 10⁻⁶ mbar. Atomic force microscopy (AFM) studies showed that all the films investigated were in nano-crystalline form with a grain size in the range 36-82 nm. All the films exhibited a wurtzite structure of the host material. The lattice parameters varied linearly with composition following Vegard’s law in the entire composition range. Photoluminescence studies showed that two distinct emission bands were observed for each Cd_1−xMn_xS compound. One corresponds to internal transition and the other one is due to the transition of Mn²⁺ ions in interstitial sites or in small ‘Mn’ chalcogenic clusters.     

Ab-initio investigations of structural, electronic, magnetic and optical properties of ferromagnetic Cd1-xMnxTe

We report ab-initio calculations of the structural, electronic, magnetic and optical properties of the alloy Cd_1-xMn_xTe as a function of the Mn concentration ‘x’. Ab-initio calculations are based on the density functional theory (DFT) within the generalized gradient approximation (GGA). The calculated lattice constants of the Cd_1-xMn_xTe alloys exhibit Vegard's law downward bowing parameter. For the minority spin channel the Fermi level shifts toward higher energy with the value of ‘x’ in Cd_1-xMn_xTe. The spin-exchange splitting energy Δ_x(d) increases with increasing ‘x’ in Cd_1-xMn_xTe and the values of p-d exchange splitting energy Δ_x(pd) of Cd_1-xMn_xTe show that the effective potential for the minority spin is more attractive than that for the majority spin. The values of exchange constants N₀α and N₀β obtained for Cd_1-xMn_xTe are in agreement with the reported data. The magnetic moment per Mn atom reduces from its free space charge value of 5μ_B to around 4μ_B due to p-d hybridization and this results into an appearance of small local magnetic moments on the non-magnetic Cd and Te sites. The absorption threshold shifts toward higher energy and the static refractive index decreases with the increasing value of ‘x’ in Cd_1-xMn_xTe.     

Magnetic behavior of Cd1−xMnxSe

We report EPR and magnetic susceptability measurements in single crystals of Cd_1?xMn_xSe as a function of concentration and temperature. The data indicate that there is a critical concentration x≈0.22 which we identify with the percolation critical point x_c.     

Spin-polarized structural, electronic and magnetic properties of diluted magnetic semiconductors Cd1−xMnxTe in zinc blende phase

We have investigated the structural, electronic and magnetic properties of the diluted magnetic semiconductor (DMS) Cd_1−xMn_xTe (for x=0.75 and 1.0) in the zinc blende (B3) phase by employing the ab-initio method. Calculations were performed by using the full potential linearized augmented plane wave plus local orbitals (FP-L/APW+lo) method within the frame work of spin-polarized density functional theory (SP-DFT). The electronic exchange-correlation energy is described by generalized gradient approximation (GGA). We have calculated the lattice parameters, bulk modulii and the first pressure derivatives of the bulk modulii, spin-polarized band structures, and total and local densities of states. We estimated the spin-exchange splitting energies Δ_x(d) and Δ_x(pd) produced by the Mn3d states, and we found that the effective potential for the minority spin is more attractive than that of the majority spin. We determine the s-d exchange constant N₀α (conduction band) and p-d exchange constant N₀β (valence band) and these somewhat agree with a typical magneto-optical experiment. The value of calculated magnetic moment per Mn impurity atom is found to be 4.08 μ_B for Cd_0.25Mn_0.75Te and 4.09 μ_B for Cd_0.0Mn_1.0Te. Moreover, we found that p-d hybridization reduces the local magnetic moment of Mn from its free space charge value of 5.0 μ_B and produces small local magnetic moments on the nonmagnetic Cd and Te sites.     

Low temperature specific heat of bi-layered manganites La2−2xSr1+2xMn2O7 (x=0.3 and 0.5)

The specific heat (C) of bi-layered manganites La_2−2xSr_1+2xMn₂O₇ (x=0.3 and 0.5) is investigated for the ground state of low temperature excitations. A T^3/2 dependent term in the low temperature specific heat (LTSH) is identified at zero magnetic field and suppressed by magnetic fields for x=0.3 sample, which is consistent with a ferromagnetic metallic ground state. For x=0.5 sample, a T² term is observed and is consistent with a two-dimensional (2D) antiferromagnetic insulator. However, it is almost independent of magnetic field within the range of measured temperature (0.6-10 K) and magnetic field (6 T).     

Structural, optical and electrical properties of Zn1−xCdxO thin films prepared by PLD

Ternary polycrystalline Zn_1−xCd_xO semiconductor films with cadmium content x ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn_1−xCd_xO films decreases continuously as the Cd content x increases. Both photoluminescence and optical measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. The increase in Cd content x also leads to the broadening of the emission peak. The resistivity of Zn_1−xCd_xO films decreases evidently for higher values of Cd content x. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn_1−xCd_xO films potential candidate for optoelectronic device.     

Formation mechanism of ferromagnetism in Si1−xMnx diluted magnetic semiconductors

Si_1−xMn_x diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si_1−xMn_x crystalline bulks. Hall effect measurements showed that annealed Si_1−xMn_x bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si_1−xMn_x bulks originated from the interaction between interstitial and substitutional Mn⁺ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si_1−xMn_x DMS bulks.     

Magnetic behaviour of Sm6Mn23−xFex compounds

Results of magnetic investigations on Sm₆Mn_23-xFe_x compounds performed over a wide temperature range are presented. It was found that replacing the Mn atoms in Sm₆Mn₂₃ and Fe atoms in Sm₆Fe₂₃ by Fe and Mn, respectively, causes a rapid reduction in both the Curie temperature and the magnetic moment. No magnetic order was found in the 4 < x < 8 range. The temperature dependence of the reciprocal susceptibility of the investigated compounds can be described using the Néel law.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

X-ray spectroscopic study of the valence band structure of Cd1−xMnxTe, x = 0.6

The valence band structure of Cd_1?xMn_xTe (x = 0.6) was studied by soft X-ray emission spectroscopy using a 11.5 m concave grating grazing incidence spectrometer in conjunction with a high power rotating anode, which provided the radiation for flourescence excitation. The position of the Mn 3d⁵ states within the energy band system could be identified unambiguously; they form a band near the top of the CdTe valence band. The results are discussed with regard to recently published photoemission data.     

Structural and Magnetic Properties of NiFe2−2xSnxCuxO4

The substituted nickel ferrite (NiFe_2−2xSn_xCu_xO₄, x=0, 0.1, 0.2, 0.3) was prepared by the conventional ceramic method. The effect of substitution of Fe³⁺ ions by Sn⁴⁺ and Cu²⁺ cations on the structural and magnetic properties of the ferrite was studied by means of ⁵⁷Fe Mössbauer spectroscopy, alternating gradient force magnetometry (AGFM) and Faraday balance. Whereas undoped NiFe₂O₄ adopts a fully inverse spinel structure of the type (Fe)[NiFe]O₄, Sn⁴⁺ and Cu²⁺ cations tend to occupy octahedral positions in the structure of the substituted ferrite. Based on the results of Mössbauer spectroscopic measurements, the crystal-chemical formula of the substituted ferrite may be written as (Fe)[NiFe_1−2xSn_xCu_x]O₄, where parentheses and square brackets enclose cations in tetrahedral (A) and octahedral [B] coordination, respectively. The Néel temperature and the saturation magnetization values of the NiFe_2−2xSn_xCu_xO₄ samples were found to decrease with increasing degree of substitution (x). The variation of the saturation magnetization with x measured using the AGFM method and that calculated on the basis of the Mössbauer spectroscopic measurements are in qualitative agreement.     

Structural and magnetic phase diagram and room temperature CMR effect of La1−xAgxMnO3

The study of the structural and magnetic phase diagram of the manganites La_1−xAg_xMnO₃ shows similarity with the La_1−x′Sr_x′MnO₃ series, involving a metallic ferromagnetic domain at relatively high temperature (≈300 K). The Ag-system differs from the Sr-one by a much smaller homogeneity range (x≤1/6) and the absence of charge ordering. But the most important feature of the Ag-manganites deals with the exceptionally high magnetoresistance (−25%) at room temperature under 1.2 T, that appears for the composition x=1/6. The latter is interpreted as the coincidence of the optimal double exchange condition (Mn³⁺:Mn⁴⁺=2) with T_max=300 K (maximum of the ρ(T) curve in zero field).     

Structure, transport and magnetic properties in La2xSr2−2xCo2xRu2−2xO6

The perovskite solid solutions of the type La_2xSr_2−2xCo_2xRu_2−2xO₆ with 0.25≤x≤0.75 have been investigated for their structural, magnetic and transport properties. All the compounds crystallize in double perovskite structure. The magnetization measurements indicate a complex magnetic ground state with strong competition between ferromagnetic and antiferromagnetic interactions. Resistivity of the compounds is in confirmation with hopping conduction behaviour though differences are noted especially for x=0.4 and 0.6. Most importantly, low field (50 Oe) magnetization measurements display negative magnetization during the zero field cooled cycle. X-ray photoelectron spectroscopy measurements indicate the presence of Co²⁺/Co³⁺ and Ru⁴⁺/Ru⁵⁺ redox couples in all compositions except x=0.5. Presence of magnetic ions like Ru⁴⁺ and Co³⁺ gives rise to additional ferromagnetic (Ru-rich) and antiferromagnetic sublattices and also explains the observed negative magnetization.     

On the magnetocaloric effect in Gd(Zn1−xCdx)

In this work, we calculate the magnetocaloric effect in the compounds Gd(Zn_1−xCd_x). We use a model Hamiltonian of interacting spins in which the indirect exchange interaction parameter between localized spins was calculated as a function of Cd concentration. The calculated isothermal entropy changes and the adiabatic temperature changes upon magnetic field variations are in good agreement with the available experimental data.     

Magnetic studies of Hg1−xMnxS and Hg1−xMnxSe solid solutions

The magnetic susceptibility of Hg_1?xMn_xS and Hg_1?xMn_xSe solid solutions with 0.05 ≤x≤0.35 in the temperature range 1.2 K ≤ T ≤ 250 K is presented. The θ_p < 0 has been found. The critical temperature determined from the curve with two slopes is compared with the one obtained from EPR measurements. Two mechanisms of magnetic spin behaviour are considered.     

Study of the magnetization and transport properties of the La(2+x)/3Sr(1−x)/3Mn1−xCrxO3 (0≤x≤0.2) system

The samples with the Mn³⁺/Mn⁴⁺ ratio fixed at 2:1 La_(2+x)/3Sr_(1−x)/3Mn_1−xCr_xO₃ (0≤x≤0.20) have been prepared. The magnetic, electrical transport, and magnetoresistance properties have been investigated. Remarkable transport and colossal magnetoresistance (CMR) effect, as well as cluster glass (CG) behaviors have been clearly observed in the samples studied. It was found that the Curie temperature T_c and insulator−metal transition temperature T_p1 are strongly affected by Cr substitution. The experiment observations are discussed by taking into account the variety of tolerance factors t; the effects of A-site radius 〈r_A〉 and the A-site mismatch effect (σ²).     

Structure and magnetic properties of Sn1−xMnxO2

The microstructure and magnetic properties have been investigated systematically for Sn_1−xMn_xO₂ polycrystalline powder samples with x=0.02-0.08 synthesized by a solid-state reaction method. X-ray diffraction revealed that all samples are pure rutile-type tetragonal phase and the cell parameters a and c decrease monotonously with the increase in Mn content, which indicated that Mn ions substitute into the lattice of SnO₂. Magnetic measurements revealed that all samples exhibit room temperature ferromagnetism. Furthermore, magnetic investigations demonstrate that magnetic properties strongly depend on doping content, x. The average magnetic moment per Mn atom decreases with increase in the Mn content, because antiferromagnetic super-exchange interaction takes place within the neighbor Mn³⁺ ions through O²⁻ ions for the samples with higher Mn doping. Our results indicate that the ferromagnetic property is intrinsic to the SnO₂ system and is not a result of any secondary magnetic phase or cluster formation.     

Magnetic and charge ordering properties of Bi0.6−xEuxCa0.4MnO3 (0.0≤x≤0.6)

We have studied structure, magnetic and transport properties of polycrystalline Bi_0.6−xEu_xCa_0.4MnO₃ (x=0.0, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6) perovskite manganites. Magnetic measurements show that the charge-ordering temperature (T_CO) decreases with increasing x up to x=0.4 and then slightly increases with further increasing x up to x=0.6. Further, the antiferromagnetic (AFM) ordering temperature (T_N) decreases with increasing x. At T<T_N a transition to metamagnetic glass like state is also seen. Eu doping also leads to enhancement in the magnetic moment and a concomitant decrease in resistivity up to x=0.2 and then an increase in resistivity up to x=0.5. We propose that the local lattice distortion induced by the size mismatch between the A-site cations and 6s² character of Bi³⁺ lone pair electron are responsible for the observed variation in physical properties.