Investigation on densification of Al2O3/B4C ceramic by ab initio calculation and experiment

Compared to experiment, the adsorption energies, bonding properties, and electronic structure of two different Al₂O₃/B₄C bridge sites with seven different Al₂O₃ surfaces are investigated by ab initio periodic density functional theory. The Al₂O₃/B₄C ceramic sintered in Ar is synthesized and measured by XRD and TEM. The calculated results reveal that the densification of O_bridge site of Al₂O₃/B₄C surface is better than that of Al_bridge. The Al₂O₃ (1 1 3)/B₄C with O_bridge is the most favorable and stable. The electronic structure shows that the electron hybridization exists between Al, O atoms and C, B atoms. The results indicate that the calculated results are in good agreement with the experiment.     

Interfacial structure of sub-micron Al2O3 particles in aluminum matrix

The surfaces of ellipsoidal Al₂O₃ particles with average size of 0.15 μm and the interfaces between the Al₂O₃ particles and 1070Al were investigated by transmission electron microscopy (TEM) and high resolution electron microscopy (HREM).The results show that the surfaces of Al₂O₃ particles appear to be polyhedrons consisting of crystal planes with small angle, while every plane of the polyhedrons could be considered as a stepped structure composed of close-packed planes along the close-packed direction. The interfaces of the 0.15 μm Al₂O₃p/1070Al composite bond well, without any interfacial reaction products. It is proposed that there are several kinds of crystallographic orientation relationships between the aluminum matrix and Al₂O₃particles due to the polyhedral structure. In our study, such orientation relationships are found to be {110} _Al ||{1100} _Al2O3 and ?110? _Al ||?1126? _Al2O3 .     

Epitaxial growth defects and interfacial structures of Cu deposited on TiO2

Epitaxial growth defects and the interfacial structure between vapor deposited Cu and TiO₂(110) have been studied by combined high-resolution electron microscopy (HREM) and image simulations. The Cu film was found to grow epitaxially with an orientation given by Cu(111)//TiO₂(110) and Cu110//TiO₂ [001]. With this relationship, there exist two equivalent domain orientations which are rotated with respect to each other by 180°. Localized misfit dislocations have not been detected, but {111} stacking faults and microtwins were observed which may occur as a result of 3-D island coalescence. HREM observations and image simulations have been used to study the interface atomic structure. The dominant interfacial structure has a stoichiometric (110) TiO₂ surface with bridging rows of O atoms and occasionally, an interfacial structure having a reduced (110) TiO₂ surface terminated by both Ti and O atoms has been observed locally.     

Studying the effect of hydrogen on diamond growth by adding C10H10Fe under high pressures and high temperatures

In this paper, hydrogen-doped industrial diamonds and gem diamonds were synthesized in the Fe–Ni–C system with C₁₀H₁₀Fe additive, high pressures and high temperatures range of 5.2–6.2?GPa and 1250–1460°C. Experimental results indicate similar effect of hydrogen on these two types of diamonds: with the increasing content of C₁₀H₁₀Fe added in diamond growth environment, temperature is a crucial factor that sensitively affects the hydrogen-doped diamond crystallization. The temperature region for high-quality diamond growth becomes higher and the morphology of diamond crystal changes from cube-octahedral to octahedral. The defects on the {100} surfaces of diamond are more than those on the {111} surfaces. Fourier transform infrared spectroscopy (FTIR) results indicate that the hydrogen atoms enter into the diamond crystal lattice from {100} faces more easily. Most interestingly, under low temperature, nitrogen atoms can also easily enter into the diamond crystal lattice from {100} faces cooperated with hydrogen atoms.     

Free Surface and Interface Thermodynamics of Liquid Nickel in Contact with Alumina

Sessile drop experiments of Ni and Ni(2at.%Al) were conducted under controlled working conditions, at 1500°C, P(O₂) 10^–9 Torr. It is shown that Al and oxygen atoms engaged in the capillary driven mass transport at the interface have a significant impact on the surface/interface thermodynamics. The surface energy of liquid Ni determined from experiments in which Ni comes into contact with Al₂O₃ is significantly lower than that of high purity Ni, due to the segregation of Al. The free energy of segregation of Al to the free surface of Ni ( G _S) was found to range from –164 to –152 kJ/mol, indicating a relatively strong tendency for segregation of Al to the free surface of Ni(Al). It is proposed that an Al(O)-rich liquid layer forms adjacent to the Ni-Al₂O₃ interface, which improves interfacial adhesion. In the Ni(Al)-Al₂O₃ system, an increase in the Al content of the alloy leads to the improvement of both wetting and adhesion of the alloy on the ceramic, correlating with the improvement in the interface strength after solidification.     

Point-defect properties of and sputtering events in the {001} surfaces of Ni3Al I. Surface and point-defect properties

Constant-area and fully relaxed molecular dynamics methods are employed to study the properties of the surface and point defects at and near {001} surfaces of bulk and thin-film Ni, Al and Ni₃Al respectively. The surface tension is larger than the surface energy for all {001} surfaces considered in the sequence: Al (1005?mJ?m^?2)<?Ni₃Al (mixed Ni–Al plane outermost, 1725?mJ?m^?2)<?Ni₃Al (all-Ni-atoms plane outermost, 1969?mJ?m^?2)<?Ni (1993?mJ?m^?2). For a surface of bulk Ni₃Al crystal with a Ni–Al mixed plane outermost, Al atoms stand out by 0.0679?Å compared with the surface Ni atoms and, for the all-Ni-atoms surface, Al atoms in the second layer stand out by 0.0205?Å compared with Ni atoms in the same layer. Vacancy formation energies are about half the bulk values in the first layer and reach a maximum in the second layer where the atomic energy is close to the bulk value but the change in embedding energy of neighbouring atoms before and after vacancy formation is greater than that in the bulk. Both the vacancy formation energy and the surface tension suggest that the fourth layer is in a bulk state for all the surfaces. The formation energy of adatoms, antisite defects and point-defect pairs at and near {001} surfaces of Ni₃Al are also given.     

α-Al2O3(0001)基片表面结构与能量研究

对α-Al₂O₃(0001)晶体表层三种不同终止原子结构的计算模型， 在三维周期边界条件下 的κ空间中，采用超软赝势平面波函数描述多电子体系.应用基于密度泛函理论的局域密度 近似，计算了不同表层结构的体系能量，表明最表层终止原子为单层Al的表面结构最稳定. 对由10个原子组成的菱形原胞进行了结构优化，得到晶胞参数值(a₀＝0.48178n m)与实验 报道值误差小于1.3%.进一步计算了超晶胞(2×2)表面弛豫，弛豫后原第2层O原子层成为最 表层； 对不同表层O，Al原子最外层电子进行了布居分析，表面电子有更大的概率被定域在 O原子的周围，表面明显地表现出O原子的电子表面态. 关键词： 2O₃(0001)')" href="#">α-Al₂O₃(0001) 超软赝势 表面结构 表面态     

A DFT+U study of the catalytic activity of lanthanum nickelate

A density functional theory + Hubbard U (DFT+U) method is implemented to investigate the catalytic activity of lanthanum nickelate (LaNiO₃) for oxygen reduction reaction. Comparison of the surface energies of different LaNiO₃ surfaces shows that {001} surface has the lowest surface energy and hence maximum stability. Two possible terminations of the {001} surface namely LaO and NiO₂ are considered to carry out all our DFT calculations. Calculation of bond lengths of the atoms near the surface and adsorption energies for the reaction intermediates revealed that LaO terminated {001} surface is unstable for the process of OOH adsorption and hence not preferred for the oxygen reduction reaction. However, NiO₂ terminated {001} surface shows excellent catalytic activity for adsorption of all the reaction intermediates and hence is a favourable surface for reactions to occur. Superiority of the NiO₂ terminated {001} surface as catalyst over the LaO terminated one, is also confirmed from the total and partial density of states of the surfaces in presence of the adsorbates, which also shows that the desorption rate of the reaction intermediates is low in case of LaO terminated {001} surface compared to the NiO₂ terminated one.     

AlxOy(x=1—2,y=1—3)分子几何结构与稳定性的DFT研究

用密度泛函理论(DFT)的B31yp方法在6-311++g^水平上对Al_xO_y(x=1—2,y=2—3)分子的几何构型、电子结构、振动频率等性质进行了理论研究. 通过对基态结构的几何参数分析发现，它们的基态结构趋于直线或平面结构. 对基态结构的绝热电离能讨论表明，金属铝原子数一定时，氧原子数从1增加到3，其气态分子越来越稳定，铝原子数少的分子体系更稳定. 系统给出了该系列分子基态的几何参数、电子结构、光谱性质. Al₂O₃的C_2V三重态是该分子的能量最低结构. 关键词： xO_y分子')" href="#">Al_xO_y分子 密度泛函理论 结构与稳定性     

Evaluating the electric property of different crystal faces and enhancing the Raman scattering of Cu2O microcrystal by depositing Ag on the surface

The surface electric property of Cu₂O microcrystal affects the interaction of facets with substance in the aqueous solution, and hence plays a key role in determining the photocatalytic activity. In this paper, the capability of Cu₂O microcrystals with exclusive {111}, {110} or both lattice surfaces in reducing Ag⁺ to Ag⁰ were investigated. Ag particles selectively deposited on {111} surfaces of Cu₂O, while not on {110} surfaces. The different behaviors of the two surfaces are mainly attributed to their different electric properties: negatively-charged {111} surfaces absorb Ag⁺ ions while positively-charged {110} surfaces repel them. Raman scattering of Cu₂O {111} surfaces was enhanced by the photo-deposition of Ag particles.     

Study of chemisorption on copper low-index and stepped surfaces

Adsorption of CHCl₃, O₂, and hydrocarbons has been studied on Cu(111) and stepped surfaces using LEED, AES, and UPS at room temperature. We find that ordered Cl overlayers form upon Cu(111), Cu[3(111) × (100)], and Cu[5(111) × (100)] surfaces upon exposure to CHCl₃. Exposure to O₂ results in rearrangement of the Cu[5(111) × (100)] surface to hill-and-valley regions with large (111) areas, whereas Cu[2(111) × (100)] is stable for the same exposure. The photoemission spectra show new energy levels due to C1 above and below the Cu d band region and a small splitting of the halogen p orbitals. Effects consistent with interaction with the Cu d band are observed. Similar effects are observed with oxygen adsorption. The initial rate of Cl or O₂ chemisorption as measured by photoemission is proportional to the density of steps on these surfaces. Apparently, structural effects play an important role in chemisorption on metals (such as copper) with low density of states at the Fermi energy.     

The adsorption of CO,O2, and H2 on Pt: I. Thermal desorption spectroscopy studies

Thermal desorption spectroscopy (TDS) has been used to study the chemisorption of CO, O₂, and h₂ on Pt. It has been found that TDS is quite sensitive to local surface structure. Three single crystal and two polycrystalline Pt surfaces were studied. One single crystal was cut to expose the smooth, hexagonally close-packed plane of the fee Pt crystal (the (111) surface). The other two single crystals were cut to expose stepped surfaces consisting of smooth, hexagonally close-packed terraces six atoms wide separated by one atom high steps (the 6(111) × (100) and 6(111) × (111) surfaces). Only one predominant desorption state was observed for CO and H adsorbed on the smooth (111) single crystal surface, while two predominant desorption states were observed for these gases adsorbed on the stepped single crystal surfaces. The low temperature desorption states on the stepped surfaces are attributed to desorption from the terraces, while the high temperature desorption states are attributed to desorption from the steps. TDS of CO from the polycrystalline foils exhibited some desorption states which were similar to those observed on the stepped single crystal surfaces, indicating the presence of adsorption sites on the polycrystalline foils that were similar to the terrace and step sites on the stepped single crystals. In general, these results suggest a high density of defect sites on the polycrystalline foils which can not be attributed simply to adsorption at grain boundaries. Oxygen was found to adsorb well on the stepped single crystals and on the polycrystalline foils, but not on the smooth (111) single crystal, under the conditions of these experiments. This is attributed to a higher sticking probability for dissociative O₂ adsorption at steps or defects than on terraces.     

氧化铝与Al(100)基体间界面原子结构研究

本文介绍了用MeV离子散射和沟道效应研究单晶铝表面无定型氧化层与基体之间界面原子结构的方法。报道了Al₂O₃/Al(100)界面原子结构的实验结果。实验表明,在纯氧气氛围中400℃下生成的氧化铝膜,铝和氧原子浓度比例严格为2与3之比;Al₂O₃膜和Al(100)基体之间的界面极其陡峭,氧化铝膜下Al(100)基体表面的再构层不大于一个原子层。由实验测量与用Monte Carlo方法计算结果比较,得到再构层原子离开原来晶 关键词：     

亚纳米厚的氧化铝包裹层可以显著提高负载型金纳米颗粒催化剂的热稳定性

负载型金纳米颗粒催化剂在许多催化反应中展现出非常好的催化活性,但是金纳米颗粒在高温等反应条件下容易烧结团聚,极大地限制了金催化剂的应用。利用原子层沉积技术在Au/TiO₂催化剂表面分别精确沉积了一层超薄的二氧化钛和氧化铝包裹层,并对比研究了包裹层对金纳米颗粒的热稳定性影响。原位红外漫反射CO吸附和x-射线光电子能谱数据证实了氧化物包裹层的存在。发现亚纳米厚的氧化铝包裹层能够在600 C完全避免金纳米颗粒的团聚;相反,二氧化钛包裹层对金纳米颗粒稳定性的提高没有明显效果。通过CO氧化探针反应的活性测试,发现随着煅烧温度的升高氧化铝包裹的Au/TiO₂ 催化剂的活性逐渐提高,表明高温处理可以促进被包裹金原子的暴露并表现出催化活性。提供了提高金纳米颗粒稳定性的有效方法,为拓展金催化剂在条件苛刻的反应中的应用奠定了技术基础.     

Interfacial reactions and oxidation behavior of Al2O3 and Al2O3/Al coatings on an orthorhombic Ti2AlNb alloy

The uniform and dense Al₂O₃ and Al₂O₃/Al coatings were deposited on an orthorhombic Ti₂AlNb alloy by filtered arc ion plating. The interfacial reactions of the Al₂O₃/Ti₂AlNb and Al₂O₃/Al/Ti₂AlNb specimens after vacuum annealing at 750 °C were studied. In the Al₂O₃/Ti₂AlNb specimens, the Al₂O₃ coating decomposed significantly due to reaction between the Al₂O₃ coating and the O-Ti₂AlNb substrate. In the Al₂O₃/Al/Ti₂AlNb specimens, a γ-TiAl layer and an Nb-rich zone came into being by interdiffusion between the Al layer and the O-Ti₂AlNb substrate. The γ-TiAl layer is chemically compatible with Al₂O₃, with no decomposition of Al₂O₃ being detected. No internal oxidation or oxygen and nitrogen dissolution zone was observed in the O-Ti₂AlNb alloy. The Al₂O₃/Al/Ti₂AlNb specimens exhibited excellent oxidation resistance at 750 °C.     

Structural properties of Al2O3 dielectrics grown on TiN metal substrates by atomic layer deposition

We investigated on the structural properties of Al₂O₃ dielectrics grown on TiN metal substrates using an atomic layer deposition technique with tri-methyl-aluminum and either O₃ or H₂O as the precursor and oxidant, respectively. The structural and morphological features of these films were examined by atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy measurements. We find that Al₂O₃ dielectric films with the O₃ oxidant exhibit a rough morphology, a thick TiO₂ film, and a small amount of contaminants such as carbon and hydrogen. The reason for the rapid diffusion of oxygen atoms into the TiN lattice leads to the formation of TiO₂ layer on the TiN substrate. This is due to the higher oxidation potential of the O₃ compared to the H₂O.     

Orientation dependence of structural transition in fcc Al driven under uniaxial compression by atomistic simulations

By molecular dynamics simulations employing an embedded atom method potential,we have investigated structural transformations in single crystal Al caused by uniaxial strain loading along the [001],[011] and [111] directions. We find that the structural transition is strongly dependent on the crystal orientations. The entire structure phase transition only occurs when loading along the [001] direction,and the increased amplitude of temperature for [001] loading is evidently lower than that for other orientations. The morphology evolutions of the structural transition for [011] and [111] loadings are analysed in detail. The results indicate that only 20% of atoms transit to the hcp phase for [011] and [111] loadings,and the appearance of the hcp phase is due to the partial dislocation moving forward on {111} fcc family. For [011] loading,the hcp phase grows to form laminar morphology in four planes,which belong to the {111} fcc family; while for [111] loading,the hcp phase grows into a laminar structure in three planes,which belong to the {111} fcc family except for the (111) plane. In addition,the phase transition is evaluated by using the radial distribution functions.     

Adsorption and desorption of no from Rh{111} and Rh{331} surfaces

The adsorption and desorption chemistry of NO on the clean Rh{111} and Rh{331} single crystal surfaces was followed with SIMS, XPS, and LEED. Results suggest dissociative NO adsorption occurs at step and/or defect sites. At saturation coverage there was ～ 10 times more dissociated species on the Rh{331} surface at 300 K than on the Rh{111} surface. On both surfaces two molecular states of NO_ads have been identified as β₁, and β₂ which possess different chemical reactivity. Under the condition of saturation coverage the β₁ and β₂ states are populated on the Rh{111} surface in a different proportion than on the Rh{331} surface. Further, their population on both surfaces is coverage and temperature dependent. When the sample is heated to desorb the saturation overlayer formed on the Rh{111} and Rh{331} crystal surfaces, approximately 50% of the overlayer is found to desorb below ? 400 K primarily from the β₂ state, molecularly as NO(g). Between 300 and 400 K the β₁ state dissociates as binding sites necessary to coordinate N_ads and O_ads are freed by desorption of NO(g).     

Synthesis and photoluminescence properties of Nd2O3 nanoparticles modified by sodium bis 2-ethylhexyl sulfosuccinate

This paper reports that Nd₂O₃ nanoparticles modified by AOT(sodium bis(2-ethylhexyl) sulfosuccinate) were prepared using microemulsion method in the system of water and propanol/AOT/toluene. Transmission electron microscopy shows that the Nd₂O₃ nanoparticles take the shape of sphere with 18\,nm and 31nm with different preparation. The organic sol of Nd₂O₃ nanoparticles is very stable at room temperature. X-ray diffraction results show that the product has hexagonal phase structure. Two ultraviolet emission band at 344\,nm and 361\,nm corresponding to the transition of ⁴D_3/2→4I_9/2 and 2P_3/2→⁴I₁₁₂ or ⁴D_3/2 →⁴I_13/2 were observed.     

On the adsorption of oxygen on the Mo{110} surface and its vicinals

The adsorption of oxygen on a Mo{110} surface and four vicinal planes with steps parallel to 〈100〉, 〈110〉 and 〈111〉 directions, is studied by Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The work has the goal to elucidate whether O adsorption on Mo{110} is really as different from O adsorption on W{110} as reported, and what is the cause of the apparent discrepancies between the various reported sticking coefficients on stepped surfaces.