Tunneling of X-ray photons through a thin film under total internal reflection conditions

Tunneling of 0.154-and 0.139-nm x-ray photons through a thin film under total internal reflection conditions has been experimentally demonstrated. The NiSi₂ film 13 nm thick is deposited by magnetron sputtering on a polished Si substrate. A beam with an angular spread of 20″ is directed to the Si/NiSi₂ interface from the inside through the lateral surface of a sample. A peak associated with tunneling of photons from Si to air through the NiSi₂ film is observed at grazing angles of θ₁ > 0.4θ_c, where θ_c is the critical angle of total internal reflection at the Si/NiSi₂ interface. The integral intensity of tunneling peaks that is measured for various θ₁ angles agrees with the calculations.     

Instability of a thin layer of a magnetic fluid in a perpendicular magnetic field

The instability and disintegration of a thin layer of a magnetic fluid in a perpendicular magnetic field are considered. New experimental findings for the dependence of the resulting surface structure of the layer on the external magnetic field and thickness of the layer are reported. Light diffraction by such structures is studied. Experimental data are compared with today’s theoretical concepts.     

A model of the size effect in a ferroelectric thin film under conditions of the phase transition

The size effects observed in thin films of displacive ferroelectrics are considered. A model of the dependence of the spontaneous polarization and phase transition temperature on the film thickness is proposed.     

Metal oxidation—II. Kinetics in the thin and very thin film regions under conditions of electron equilibrium

Using the results of Part I, the kinetics of growth of uniform, compact, oxide films, in the thickness range where diffusion in the bulk of the film may be neglected compared with migration, is examined for systems in which electron equilibrium is essentially maintained during film growth. (For such systems, a significant contribution to the space charge in the film is expected only from the mobile defects, cf. Part I). A variety of rate laws are shown to arise as limiting cases, including linear, parabolic, cubic and logarithmic type rate laws. Space charge effects, while relatively unimportant for systems in which ion transport occurs via cation vacancies, can be quite significant for those involving transport via interstitial cations.     

Self-organization in a chromium thin film under laser irradiation

Self-organization of chromium on glass was observed during laser ablation of the metal film with partially overlapping laser pulses. The beam of a nanosecond pulse laser tightly focused to a line was applied to the back-side ablation of the chromium thin film on a glass substrate. While the line ablated with a single laser pulse had sharp edges on both sides with ridges of the melted metal, the use of partially overlapping pulses formed a complicated structure made of the metal remaining from the ridges. Regular structures of ripples were developed in a certain range of laser fluence and pulse overlap. The ripple period could be controlled from 2.5 to 4 μm by variation of the processing parameters. Various experimental techniques were applied to test the structures, and different models of the ripple formation in the thin metal film were considered. The initial quasi-periodical formation started because of dewetting of thin liquid metal films on the glass substrate after its melting. Similar to the evaporation of liquid films, the small perturbation in the ridge thickness was able to induce instability in evaporation of the thin melted metal film. Freezing of the nonequilibrium state between laser pulses was one of the stabilizing factors in self-organization of the metal.     

Nonlinear transmission of ultrashort laser pulses by a thin semiconductor film under conditions of a two-photon two-pulse excitation of biexcitons

Specific features of the nonstationary transmission of two pulses exciting biexcitons from the ground state in a thin semiconductor film are studied. It is shown that one of the incident rectangular pulses is totally reflected from the film, whereas the second pulse passes through it as through an absolutely transparent medium. Criteria for appearance of a stationary bistable transmission are determined.     

高压射频等离子体增强化学气相沉积制备高效率硅薄膜电池的若干关键问题研究

报道了采用高压射频等离子体增强化学气相沉积(RF-PECVD) 制备高效率单结微晶硅电池和非晶硅/微晶硅叠层电池时几个关键问题的研究结果, 主要包括: 1)器件质量级本征微晶硅材料工艺窗口的确定及其结构和光电性能表征; 2)孵化层的形成机理以及减小孵化层的有效方法; 3)氢稀释调制技术对本征层晶化率分布及其对提高电池性能的作用; 4)高电导、高晶化率的微晶硅p型窗口层材料的获得, 及其对减小微晶硅电池p/i界面孵化层厚度和提高电池性能的作用等. 在解决上述问题的基础上, 采用高压RF-PECVD制备的单结微晶硅电池效率达8.16%, 非晶硅/微晶硅叠层电池效率11.61%.     

垂直场下磁性薄膜中的铁磁共振现象

将铁磁共振频率看成外磁场的函数, 讨论了垂直场下磁性膜中的铁磁共振现象. 结果显示: 当外磁场平行于膜面, 并考虑磁膜具有垂直磁晶各向异性情形时, 其磁共振频率随外磁场的变化分为高频支和低频支两种情况, 具体的依赖关系取决于磁膜内磁晶的各向异性; 当外磁场垂直于膜面, 其磁共振频率随外磁场的关系仅存在一支, 一般地, 磁共振频率随外磁场的增加单调地非线性减小, 但当立方磁晶各向异性场H_k1 与单轴磁晶各向异性场H_a之比值介于2/3 < H_k1/H_a <1时, 其磁共振频率随外磁场的增加单调增加, 这与相关的实验结果一致. 研究结果表明: 磁薄膜中有无垂直于膜面的磁各向异性可以通过其磁共振谱的测量进行辨析.     

Magnetic surface reconstruction in thin film: Possibilities of production and exploitation

Various theoretical techniques are considered for the production of magnetic surface reconstruction (MSR) in ferromagnetic thin films. The problem is discussed within the framework of the surface field model assuming the existence of a unidirectional anisotropy on the surface described by an effective field K_s It is shown that knowledge of the conditions for the occurrence of MSR together with complementary information accessible from critical spin wave resonance permits the complete determination of the properties of the field K_s.     

ZnS thin film prepared through a self-assembled thin film precursor route

Poly(zinc 1,6-hexanedithiolate) thin film, a precursor to prepare ZnS thin film, was self-assembled on a quartz substrate. The UV-vis spectra monitored the annealing process of the poly(zinc 1,6-hexanedithiolate) film, which revealed that the ZnS thin film began to form at approximately 515 K. The result of XRD confirmed the crystallinity of ZnS. With increase of annealing temperature, a red shift of the emission spectra was observed.     

ZnO thin film with nanorod arrays applied to fluid sensor

A ZnO guiding layer with nanorod arrays grown on a 90°-rotated ST-cut (42°45) quartz substrate was used to fabricate a Love wave fluid sensor. ZnO nanorod arrays synthesized on the guiding layer enhance the sensitivity of the flow rate. ZnO thin films were deposited by radio frequency magnetron sputtering and ZnO nanorod arrays were then synthesized on the thin films via the hydrothermal method. The crystalline structure and surface morphology of ZnO thin films and nanorod arrays were examined by X-ray diffraction and scanning electron microscopy. The effects of the thickness of ZnO thin film and the surface morphology of ZnO nanorod arrays on the sensitivity of flow rate were investigated. A linear response between flow rate and the return loss of the sensor with one-port resonator type can be obtained by adjusting the thickness of ZnO thin film and the length of nanorod arrays.     

Measurement of indoor Rn using CR-39 under a thin film geometry

In this work an assembly for indoor ²²²Rn measurement is presented. This assembly is made up of two acrylic plates (14 cm×14 cm) separated by a distance of 4 mm. To prevent radon daughters from outside entering the assembly (and produce alpha particle tracks striking the CR-39 detector placed in the central region of one of these plates), the borders of these plates were progressively closed, leaving open only a rectangular aperture of 5 mm×4 mm. The size of this opening was determined experimentally, by exposing in two indoor environments assemblies with different apertures as follows: (i) all borders open; (ii) two borders closed; (iii) three borders closed; (iv) four borders closed but one containing a 6 cm×4 mm opening; (v) four borders closed but one containing a 2.5 cm×4 mm opening and (vi) four borders closed but one containing a 0.5 cm×4 mm opening. Track density shows a noticeable decrease between assembly (i) and assembly (iii), remaining constant for smaller openings. Only ²²²Rn, a noble gas, should enter the assembly independently of the opening size.     

Buckling of a stiff thin film on a compliant substrate under anisotropic biaxial prestrain

The structure of stretchable electronics is based on the buckling of a thin film on a compliant substrate. Under anisotropic biaxial prestrains, this structure may buckle into several patterns, including cylindrical, checkerboard, and undulating patterns. The displacement and energy of each pattern are deduced analytically. By comparing their minimum potential energies, the critical buckling condition of each pattern is determined. After secondary bifurcation, the checkerboard pattern occurs just above the critical prestrains, but the undulating pattern dominates other regions. The buckling amplitude and wavenumber of the undulating pattern are shown under biaxial prestrains. Even if the structure is under equi-biaxial prestrains, it may buckle into an asymmetric undulating pattern.     

Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions

The growth of thin praseodymium oxide films on silicon (111) using small deposition rates under oxygen-deficient conditions was investigated in the range from submonolayer up to six monolayers coverage by transmission electron microscopy (TEM) and photoemission spectroscopy (PES). A detailed analysis of the silicon 2p and oxygen 1 s core level and valence band spectra reveals chemical reactions between deposited species, substrate, and the growing film. Silicate, silicide and oxide species are coexisting over the entire range of coverages investigated. Cross sectional TEM shows silicide inclusions extending from the surface several nanometers into the substrate and affecting the substrate band bending at the interface. The reactivity of the praseodymia overlayer leads to reactions in the as-deposited film even at room temperature and render it unstable. The article aims at providing a coherent picture of the chemistry proceeding during interface formation and film growth at low rates of deposition (0.06 nm/min). The results will be discussed in comparison to studies using higher rates, emphasizing the possibility of growth rate dependent reactions between substrate and deposited material and, consequently, distinctly different film compositions and structures for different rates of deposition.     

Plasmonic interactions between a perforated gold film and a thin gold film

Based on the finite difference time domain method,we investigated theoretically the optical properties and the plasmonic interactions between a gold film perforated with periodic sub-wavelength holes and a thin gold film.We showed that the plasmon resonant energies and intensities depend strongly on the thicknesses of the two films and the lattice constant.Based on the distributions of normal electric field component E z,tangential electric field component E y and total energy,we showed that the optical transmission is due to the collaboration of the localized waveguide resonance,the surface plasmon resonance and the coupling of the flat-surface plasmon of the two layers.     

Instability of the Kolmogorov flow in a soap film

We examine the instability of a soap film flow driven by a time-independent force that is spatially periodic in the direction perpendicular to the forcing (Kolmogorov flow). Linear stability analysis of an idealized model of this flow predicts a critical Reynolds number R(c) is approximately equal to the square root of 2. In our soap film experiment, we find a critical value R(c) is approximately equal to 70. This discrepancy can be ascribed to frictional effects from viscous coupling of gas to the film, which is neglected in the idealized model. The kinematic viscosity of the surrounding gas and the thickness of gas layers on each side of the soap film are varied in the experiments to better understand these frictional effects. Our observations indicate that flow in the soap film cannot be decoupled from flow in the surrounding gas.     

Diffusion through a polycrystalline thin film

Analytical solutions to Fick’s second law of diffusion have been simultaneously derived without the restrictions of parabolic profiles along the x-axis in grain boundaries and expressed in a series for both grain interior and grain boundary diffusing through a polycrystalline thin film. The analysis takes segregation of diffusion species at grain boundaries into account. The analytic solutions lead to the concentration profiles in the grain interior and in the grain boundary, to the average-integrated amount of diffusion species at the exit surface, and to the time lag, which can be technologically used for depth profile studies and kinetic accumulation measurements.     

低能电子束照射接地绝缘薄膜的负带电过程

为揭示低能电子束照射接地绝缘薄膜的负带电过程及其机理,建立了同时考虑电子散射与电子输运的计算模型,综合Monte Carlo方法和有限差分法进行了数值模拟,获得了内部空间电荷、泄漏电流和表面电位随电子束照射的演化规律.结果表明,入射电子因迁移、扩散效应会超越通常的散射区域产生负空间电荷分布,并经过一定的渡越时间后到达接地基板,形成泄漏电流,负带电暂态过程则随着泄漏电流的增加而趋于平衡.在平衡状态下,泄漏电流随电子束能量和电流而增大;薄膜净负电荷量和表面电位随膜厚而增加、随电子迁移率的增大而降低,随着电子束 关键词： 绝缘薄膜 电子束照射 带电效应 数值模拟