Energy Spectra of the Local States in the Forbidden Gap of Monoclinic TlInS2xSe2(1?x) Crystals

Near IR properties of the mixed TlInS_2xSe_2(1–x) have been studied previously by the present authors. In this work the temperature and frequency dependence's of the conductivity and the current-voltage characteristics (in relatively weak electric field), have been investigated for monoclinic TlInS_2xSe_2(1–x) crystals, which are perspective materials for IR applications. From the temperature dependence's of conductivity in the direction perpendicular to c- axis the band gap E^g = 2.22 eV was determined for --TlInS₂ crystals. The impurity centres were determined located at 0.43, 0.73 eV and 0.35, 0.48, 1.12 eV for the direction of current i//c and i c, respectively. The concentration of the centres located at 0.48 and 1.12 eV were calculated to be N_A – N_D = 4.8 · 10⁹ cm^–3 and 1.9 · 10¹¹ cm^–3, respectively. It was found that in the solid solutions TlInS_2xSe_2(1–x) for 0.3 x 1, the conductivity follows the dependence (v) = ₀·^s in the temperature range between 100 to 600 K. In the temperature range of 80-400 K charge bounce plays an important role in the conductivity mechanism. Occurrence of the deep and low-levels impurity centres and a tail of the density of energy states in TlInS_2xSe_2(1–x) crystals make them perspective for practical applications: switching and memory effects, N-type current-voltage characteristics, induced conductivity etc.     

Solubility of Na2Co3 in NaCl:CaCl2 crystals

Measurements of electrical conductivity of NaCl 10^–5 molar fr. CaCl2 (1–80)×10^–5 molar fr. Na₂CO₃ crystals have been used to determine the temperature dependence of the solubility of CO₃-ions over the temperature range from 75 to 530 °C. The total solubility of CO₃-ions and that of [CO ₃ ^2– -vacancy] complexes may be expressed by simple relationships andc _ka=3·19× 10^–2 exp (–0·25 eV/kT), resp. The heat of solution of complexes is equal to 0·25 eV and that of free CO ₃ ^2– ions is higher than 1·2 eV. Under conditions of the thermal equilibrium between the solid solution and precipitate, the ratio of Na₂CO₃ and CaCO₃ components in the precipitate has been calculated at various temperatures and CO₃ concentrations.     

Dielectric properties of (K,Li)TaO3 crystals at superhigh frequencies

The dielectric-resonator method was used to study the dielectric constant and loss of K_1–xLi_xTaO₃ crystals for lithium contents x=0.02, 0.05, and 0.1 in the frequency of 0.5 GHz (in the temperature interval from 4.2 to 300 K) the dielectric constant, the static nonlinearity, and the dynamic nonlinearity were studied, the dielectric properties of K_1–xLi_xTaO₃ are determined simultaneously by the relaxation of impurity ions and by the soft mode, but at helium temperatures the contribution of the soft mode to predominates. The addition of lithium leads to a reduction of at 4.2 K and to a lessening of the steepness of the (t) curve. KTaO₃ crystals alloyed with lithium exhibited exceptionally low losses at helium temperatures (at 4.2 K in the range 12–14 GHz, tan =2 · 10^–5 for x=0.1). With a rise in temperature the loss increased just as in the case of unalloyed KTaO₃, but less steeply. Measurements of crystals with x=0.1 revealed considerable dispersion of the nonlinearity: the coefficient of static nonlinearity was an order of magnitude of magnitude higher than the coefficient of dynamic nonlinearity ₁ ^dyn, which was determined according to the efficiency of generation of the second harmonic.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 3–7, January, 1988.     

Microwave–assisted synthesis of <Emphasis Type="Italic">submicrometer</Emphasis> GaO(OH) and Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> rods

Submicrometer sized gallium oxide hydroxide (GaO(OH)) and gallium oxide (Ga₂O₃) rods have been successfully fabricated on a large scale by refluxing an aqueous solution of Ga(NO₃)₃ and NH₄OH in a simple domestic microwave oven (DMO). The structures, morphologies, compositions and physical properties of the as–synthesized and calcined products have been characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), selected area energy dispersive X-ray spectroscopy (SAEDS), thermo gravimetric analysis (TGA), differential scanning calorimetry (DSC), and energy dispersive X-ray (EDX) analysis. TEM images show that submicrometer sized as–synthesized Ga O(OH) rods have diameters of 0.3–0.5 m and lengths of 3.2–3.5 m. The calcined product consists of submicrometer rods with diameters of 0.4–0.5 m and lengths of 5–5.5 m. XRD, EDX and SAED analysis together indicate that the as–synthesized product has an orthorhombic gallium oxide hydroxide (GaO(OH)) crystal structure, and that the calcined product is rhombohedral Ga₂O₃. A possible mechanism for the formation of submicrometer sized GaO(OH) rods is discussed briefly.     

Properties of MOS-structures based on anode-oxidized CdSnAs2

The properties of metal (Al, Au)-anodic oxide-CdSnAs₂ monocrystal structures are studied. It is established that MOS-structures using undoped CdSnAs₂ crystals show a high positive fixed charge in the anodic oxide (N_S 5·10¹² cm^–2) and high surface state density on the oxide-CdSnAs₂ boundary surface (N_SS 2·10¹³ cm^–2·eV^–1). In MOS-structures using diffusion-doped (copper) crystals the sign of the fixed charge is negative (N_S 10¹¹ cm^–2, N_SS 2·10¹² cm^–2·eV^–1). The latter structures show a definite photosensitivity and photomemory. The possibility of effective control of the fixed charge value within the oxide by illumination is shown. The surface state distribution over energy, time constant, and capture section is determined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 90–93, September, 1982.     

Optical and Photoelectric Inhomogeneity of CdTe:V Crystals

The optical and photoelectric properties of CdTe:V crystals with the doping impurity concentration N _V = 5·10¹⁸–5·10¹⁹ cm^–3 are investigated and the possibility of their use as a photorefractive material is considered. As is seen from the spectra of optical transmission, the crystals of both types possess high transparency (50–65%), which for CdTe:V specimens with N _V = 5·10¹⁹ cm^–3 decreases sharply and in the range 12–14 m does not exceed 5%, whereas for CdTe:V crystals with vanadium concentration of 5·10¹⁸ cm^–3 such a value of transmission remains unchanged up to 25 m, implying a good optical quality of the latter crystals and their possible application in the spectral range 1.06–1.25 m in modern fiber-optic communication lines.     

Determination of the far infrared optical constants of η-doped bulk CdxHg1?xTe (CMT) by dispersive fourier transform spectroscopy

Far infrared phase and amplitude reflectivity measurements have been made on two bulk Cd_xHg_1–xTe mixed crystals with composition x=0.29 and x=0.22 by dispersive Fourier transform spectroscopy (DFTS). The results have been used to calculate the real and imaginary parts of the dielectric function (, ) from the Fresnel relations. A plasma contribution is observed in the spectra in addition to the phonon response. For both samples a broad but weak reflection band around 95–105 cm^–1 is observed as well as the expected two-oscillator response from the HgTe-like and CdTe-like optical phonons. This feature is attributed to absorption due to phonon combination bands, but it is too broad to enable assignments to be made. There is no evidence of additional features in the CdTe region due to clustering.     

Structure and physical properties of ceramics in a section of the system Mg-Cu-Fe-O

The concentration dependences of the crystal lattice parameter and the Curie temperature of the magnetic ceramic, obtained in air at a calcination temperature of 1100°C from charges with the composition (1–x)MgFe₂O₄+x(0.5 CuO × 1.25 Fe₂O₃), where 0x1, were studied. The dependences of the magnetic parameters of the hysteresis loop as well as the resistivity on the composition of the charge were investigated. The single-phase ceramic, having the structure of spinel, is formed for x < 0.5, and in samples with x > 0.5 a tetragonal phase and -Fe₂O₃ are present. The maximum squareness ratio of the hysteresis loop (SHL) is observed in the region x=0.1–0.4. The region of high values of the squareness ratio is also the region of solid solutions containing defects, when -Fe₂O₃ quasiparticles, having the structure of imperfect spinel, are present in the solution.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 84–86, December, 1990.     

Temperature dependence of the electron effective mass in MnxHg1−xSe

We have investigated the temperature dependence of the electron effective mass in Mn_xHg_1–xSe crystals (0 < x 0.1) in the T=90–300 K temperature range. We have determined that the temperature-dependent changes in the band gap (_g), in the band diagram nonparabolicity, and in the conduction band carrier concentration have a strong effect on the temperature dependence of the carrier effective mass at the Fermi level m ^*=f(T).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 5–9, November, 1987.     

Optical constants of thin CoSi2 films on silicon

The optical transmission of CoSi₂ films of thickness 2.6–15 nm is measured in the wavelength range 1–20 m. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency _p=5.4–7.6 eV is equivalent to a carrier density n _eff=3×10²² cm^–3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values =2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency.     

An IR-Radiometer with Internal Signal Modulation

An infrared (IR) radiometer electrical circuit on the basis of photoresistors and photodiodes made of silicon doped with zinc (Si) as well as the narrow bandgap semiconductor alloy Pb_0.78Sn_0.22Te is presented. In the circuit suggested a bridge with the photoreceiver connected to the radiometer input and immediately fed by signal generators functions as a radiation modulator. The threshold sensitivity turned out on a recorder is 2·10^–13 W·Hz^–1/2 (for the n⁺–n–n⁺ structures made of Si, =0.8–l.2m, T=300K); 1.4·10^–15W·Hz^–1/2 (for p⁺–n–n⁺ S-diodes on the basis of Si, =0.8–1.2m, T=300K) and 10^–12W·Hz^1/2 (for photodiodes on the basis of Pb_0.78Sn_0.22Te, =8–13m, T=77K).     

119Sn-mössbauer,IR, and DSC study of tin oxyfluoride glasses

The¹¹⁹Sn-Mössbauer spectra ofxSnO·(70–x)SnF₂·30P₂O₅ glasses (0 x70) measured at 78 K comprised a doublet due to Sn²⁺ (=3.30–3.36 mm s^–1, = 1.70–1.72 mm s^–1) and a weak singlet due to Sn⁴⁺ located at –0.23 mm s^–1 with respect to BaSnO₃. The and of Sn²⁺ were comparable to those of Sn₂P₂O₇. Small Debye temperatures (146 and 155 K) were obtained from the low-temperature measurements. These results indicate that Sn²⁺ and Sn₄₊ occupied interstitial sites, being loosely and ionically bonded to distorted PO_4–x F _x tetrahedra.     

Magnetic-relaxation study in melt-textured ErBa2Cu3O7−δ ceramic material

We have studied the zero-field-cooled magnetic relaxation in the melt-textured ErBa₂Cu₃O_7– ceramic material. The magnetic relaxation rate dM/d (ln t) exhibits strong temperature and field dependence in the temperature range up to 80 K and the field range up to 5.5 T. The magnetic relaxation behavior observed in the melt-textured ErBa₂Cu₃O_7– ceramic sample is similar to that in single crystals. The magnetization to noise ratio is much improved, in particular, for temperatures approaching the superconducting transition temperature and for low magnetic fields. Several theoretical models were explored to fit the experimental data.     

Investigation of ionic thermocurrents in SrCl2-K crystals

Ionic thermocurrents in SrCl₂-K crystals have been investigated for the first time. Two maxima of thermally stimulated depolarization currents have been detected at T=112°K and T=210–240°K. The low-temperature maximum with a reorientation energy =0.25 eV and a frequency factor _o=7.1·10⁹ Hz is due to relaxation of impurity-vacancy dipoles. Its intensity grows linearly with the concentration of the dopand. The high-temperature maximum is due to the space charge. Its activation energy =0.46 eV coincides with the migration energy of anion vacancies associated with the potassium ions.Translated from Izvestiya Vysshikh Zavedenii, Fizika, No. 9, pp. 80–83, September, 1982.     

Doping properties of microcrystalline silicon prepared by mercury sensitized photochemical vapor deposition

Conductivity of photo-CVD microcrystalline silicon (c-Si:H) in wide range of dopant gas concentration (10^–53/SiH₄, B₂H₆/SiH₄<10^–2) is investigated. As compared with a-Si:H, the conductivity of the film is improved more than two orders of magnitude by microcrystallization for a wide range of dopant concentration at a deposition temperature of as low as 150°C. This indicates the suitability of photo-CVD for low temperature processing. A conductivity minimum is found at a doping ratio of about B₂H₆/SiH₄=1×10^–5.     

Structural,electrical and optical properties of Cdx Zn1−xSe thin films

X-ray diffraction and electron diffraction techniques indicate that Cd_x Zn_1–xSe thin films on glass substrates have a polycrystalline nature, with sphalerite structure for x0.5 and wurtzite structure for x0.6. The crystalline size in each composition increases with increasing the film thickness. The room temperature dark resistivity varies from one composition to another showing a transition at x=0.55The temperature dependence of of the deposited films revealed two conduction mechanisms, one below 352 K due to shallow levels, surface states, and defects introduced during the film growth, and over 352 K due to deep-level ionization following the ordinary semiconducting behaviour.The thermal activation energy of the free charge carriers decreases linearly with increasing the molar fraction x of the CdSe content up to x=0.55, above which it increases with increasing x.The optical constants of Cd_x Zn_1–xSe thin films of different compositions were determined in the spectral range 400–2000 nm. The analysis of the absorption coefticient at and near the absorption edge indicates the existence of allowed direct transition energy gaps decreasing with increasing x.     

Determination of the strain potential constant by means of the p-InSb photoconductivity spectra under uniaxial compression

The influence of uniaxial pressure (0 < P < 2600 kg/cm2) on the intrinsic photoconductivity (PC) spectrum of p-InSb at 93 and 15°K is investigated. At 77°K the carrier concentration and mobility in the specimens were, respectively, (1.4–3.2)·10¹⁴ cm^–3 and 7000 cm²/V. sec. It is established that the maximum in the PC(E_m) spectra under compression is shifted towards higher energies. In the low-compression range E_m/P=5·10^–6eV·cm²/kg, while E_m/P=1·10^–6eV·cm²/kg for P > 1000 kg/cm². It is shown that the shift of the maximum of the intrinsic PC spectra with pressure is due to the growC;th in the forbidden bandwidth (E_g), and the change in parameters characterizing carrier diffusion in the specimen bulk (the diffusion coefficient, lifetime, surface recombination velocity) plays no part. The change in E_m/P with pressure is explained by the influence of valence band splitting. The deformation potential constants of the valence band |b|=(1.7±0.3) eV and |d|=(4.4±0.8)eV are calculated on the basis of a comparison between experimentally obtained data and theoretical results.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 159–162, February, 1976.     

Temperature dependence of anisotropy in monocrystalline lithium ferrite films

A study of crystallographic and uniaxial anisotropy in monocrystalline Li-ferrite films in the temperature range 4.2–550°K is presented. The experimental results K₁(T) agree well with calculations based on the one ion model with crystalline field coefficients of a_A=–2.77 ·10^–2 cm^–1, a_B=3.34 · 10^–2 cm^–1. An experimental function K_u(T) is obtained which does not contradict the assumption that anisotropic stresses are responsible for the development of uniaxial anisotropy in Li-ferrite films.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 113–116, August, 1973.     

Optical Spectra of Zinc Oxide in the Wide Energy Range 0–30 eV

A full set of spectra of the optical functions of a zinc oxide crystal in the range 0–30 eV has been calculated on the basis of the experimental spectrum of characteristic losses –Im ^–1. The ₂, ₁ and Im ^–1, Re ^–1 spectra were decomposed into elementary components. The most intense transverse and longitudinal components of transitions and their parameters have been determined. The data obtained were compared with theoretical calculations of the bands.     

Magnetic properties of solid solutions of the system ErxY1−xFe2

The magnetic properties of the system Er_xY_1–xFe₂ (MgCu₂ structure) in the temperature range 80–800°K are investigated. The magnetization and the coercive force H_c are measured as a function of T. For alloys with x= 0.5–1 there is a magnetic compensation point _c. The composition dependence of _c, the magnetic moment of the alloy and of the iron atoms Fe are determined. An H_c anomaly is observed in _c. In order to explain the results obtained, the presence of two types of magnetically active atoms and three types of exchange interaction are included.Translated from Izvestiya Vysshykh Uchebnykh Zavedenii, Fizika, No. 10, pp. 27–30, October, 1982.