掺AlZnO纳米线阵列的光致发光特性研究

采用化学气相沉积方法，以金做催化剂，在Si (100)衬底上制备了掺AlZnO纳米线阵列.扫描电子显微镜(SEM)表征发现ZnO纳米线的直径在30nm左右.X射线衍射(XRD)图谱上只存在ZnO的(002)衍射峰，说明ZnO纳米线沿c轴择优取向.掺AlZnO纳米线阵列的室温光致发光(PL)谱中出现了3个带边激子发射峰：373nm，375nm，389nm.运用激子理论推算出掺AlZnO纳米线的禁带宽度为3.343eV ，束缚激子结合能为0.156eV；纯ZnO纳米线阵列PL谱中3个带边激子发射 关键词： 光致发光 化学气相沉积(CVD) 激子 ZnO纳米线阵列     

Room-temperature ferromagnetic Mn-alloyed ZnO films obtained by pulsed laser deposition

Ferromagnetic, semi-insulating Mn-alloyed ZnO films with a Curie temperature above 375 K have been grown by pulsed laser deposition on c-plane sapphire substrates. Antiferromagnetic coupling is revealed by temperature-dependent magnetization measurements. The antiferromagnetic coupling would be compatible with the observed weak ferromagnetism by assuming that the magnetic moments order antiferromagnetically but nonparallel (canted). We find a clear correlation between coercivity and mosaicity of the ferromagnetic Mn-alloyed ZnO films and explain it on the basis of a coercivity mechanism known from soft magnetic materials.     

Synthesis of ZnO nanowires by pulsed laser deposition in furnace

ZnO nanowires were fabricated on Au coated (0 0 0 1) sapphire substrates by using a pulsed Nd:YAG laser with a ZnO target in furnace. ZnO nanowires have various sizes and shapes with a different substrate position inside a furnace. The length and the diameter of these ZnO nanowires were around 3-4 μm and 120-200 nm, respectively, confirmed by scanning electron microscopy (SEM). The diameter control of the nanowires was achieved by varying the position of substrates. The ultraviolet emission of nanowires from the near band-edge emission (NBE) was observed at room temperature. The formation mechanism and the effect of different position of substrates on the structural and optical properties of ZnO nanowires are discussed.     

ANSYS仿真激光切割氧化锌纳米线

 以脉冲高斯激光为光源,直径在500 nm～1 000 nm、长度10 μm的一维氧化锌材料为对象,采用有限元分析软件ANSYS建立了激光切割氧化锌纳米线的热力学仿真模型,并采用生死单元技术对超过熔点的单元进行处理,得到不同激光工作参数和氧化锌纳米线直径下的温度分布场和切割形貌。讨论了纳米线直径和聚焦光斑相对纳米线的位移对切割的影响,纳米线直径越大允许的激光离焦量越小;当无离焦或负离焦较小时,切割纳米线产生的形貌较为理想。     

Abnormal blueshift of UV emission in single-crystalline ZnO nanowires

Single-crystalline ZnO nanowires (NWs) were synthesized by a facile vapor transport method. The good orientation and high crystal quality were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and high-resolution transmission electron microscope (HRTEM) measurements. Excitation-power-dependence photoluminescence spectra of ZnO NWs show that the UV emission displayed an evident blueshift with increasing excitation power and the corresponding energy shift might be as large as 10 meV. This anomalous phenomenon correlates to the band bending level caused by the surface built-in electric field due to the existence of substantial oxygen vacancies. By increasing the excitation power, the enhanced neutralization effect near the surface will reduce the built-in electric field and lead to a reduction of band bending which triggers the blueshift of the UV emission.     

Enhanced near-band-edge emission and field emission properties from plasma treated ZnO nanowires

Near-band-edge emission in photoluminescence of ZnO nanowires was found to be significantly improved after plasma treatment. The ratio of ultraviolet emission peak intensity before and after plasma treatment is as high as 3.5. Field emission properties were considerably enhanced after plasma treatment as well. Current emission density has been increased two orders of magnitude under the same electric field. Passivation of surface states and surface morphology change were found to be responsible for such an effective improvement. Our results suggest that the plasma treatment method is effective in enhancing both the near-band-edge emission in photoluminescence and field electron emission performance from ZnO nanowires.     

Surface coating effect on field emission performance of ZnO nanowires

Surface coating effect on field emission performance of ZnO nanowires was studied by zinc surface coating. Coating time was found to play an important role in determining the field emission properties. 3 s and 5 s coating enhanced the field emission properties considerably, with lower turn-on field and larger electron emission current density. Prolonging the coating time to 10 s deteriorated the field emission properties of ZnO nanowires. Surface morphology change and green emission in photoluminescence related surface state were found to be responsible for such improvement. Our results provide an innovative approach to improve the field emission properties of ZnO nanowires for development of vacuum nanoelectronic devices.     

Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of approximately 40 nm at an approximately 1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.     

Multi-photon-pumped stimulated emission from ZnO nanowires: A time-resolved study

In this work, we study temporal evolution of multi-photon-pumped stimulated emission from ZnO nanowires. In addition to second harmonic generation, ultraviolet stimulated emission is observed in ZnO nanowires under femtosecond pulse excitation at 800 nm. Sharp emission peaks appear when excitation flux reaches a threshold of 80 mJ/cm², which can be interpreted as lasing action in self-formed nanowire microcavities. Temporal evolution of the emission captured by Kerr shutter technique shows strong excitation-power dependence. The dynamic trace of stimulated emission exhibits a fast decay with a lifetime about 4.5 ps at intermediate excitation (∼100 mJ/cm²) and a lifetime about 2 ps at high excitation (>160 mJ/cm²). The difference in the lifetime can be attributed to different gain mechanisms related to excitonic interaction and electron-hole plasma, respectively.     

Optical processes in the formation of stimulated emission from ZnO nanowires

This paper studies power dependent photoluminescence spectra, the stimulated emission occurring at ultraviolet (UV) band instead of the green emission band of ZnO nanowires, which are prepared with a chemical reduction method. The dynamics of the UV emission and green emission is given to demonstrate the reason of stimulated emission occurring at UV band but not the green emission band under high excitation, which indicates that the slow decay rate of trap state makes it easy to be fully filled and saturated, while the fast decay rate of near-band-edge exciton state makes the UV emission dominate the radiative recombination under high excitation. The UV emission, as well as the corresponding stimulated emission, occurs in competition with the green deep-trap emission. In addition, when pump fluence further increases, the multiple lasing modes appear. The dependence of these lasing modes on the pump fluence is first discussed. This diagram should be helpful to understand and design the optical nanodevices of ZnO nanowires.     

Fabrication of Co-doped ZnO nanowires and their temperature-dependent ultraviolet emission properties

Co-doped ZnO nanowires have been fabricated through a high temperature vapor–solid deposition process. The temperature-dependent ultraviolet emission properties of Co-doped ZnO nanowires under 10–300 K were reported. The results show that there are multipeak emissions situated at the ultraviolet region. The investigation of the excitonic transition in Co-doped ZnO nanowires shows that there is an intensive ultraviolet periodic emission of Co-doped ZnO nanowires under low temperature. The oscillatory structure has an energy periodicity about 70 meV. The oscillatory structure is mainly attributed to the longitudinal optical phonon replicas of the free exciton. The ultraviolet emission shows an obvious redshift with the increasing temperature.     

2D planar field emission devices based on individual ZnO nanowires

2D planar field emission devices based on individual ZnO nanowires were achieved on Si/SiO₂ substrate via a standard e-beam lithography method. The anode, cathode and ZnO nanowires were on the same substrate; so the electron field emission is changed to 2D. Using e-beam lithography, the emitter (cathode) to anode distance could be precisely controlled. Real time, in situ observation of the planar field emission was realized in a scanning electron microscope. For individual ZnO nanowires, an onset voltage of 200 V was obtained at 1 nA. This innovative approach provides a viable and practical methodology to directly implement into the integrated field emission electrical devices for achieving “on-chip” fabrication.     

Exciton-exciton interaction and laser emission in high-purity ZnO

A new laser line is observed in electron beam excited ZnO at temperatures below 77 K. The laser wavelength is 3726 Å at 10 K, and the corresponding spontaneous emission band (P-band) contains two pronounced peaks at 3715 and 3730 Å, respectively. The intensity of the P-band varies nearly quadratic with the exciton density and it is interpreted as being due to an exciton-exciton interaction.     

共沉淀法制备Co掺杂ZnO的室温铁磁性的研究

利用共沉淀法并在5vol.%H₂/Ar气流中于300 ℃退火3 h,制备了Zn_1-xCo_xO稀磁半导体. 扫描电子微探针分析表明,对Co的名义组分分别为0.05,0.10,0.15的样品,其实际组分分别为x＝0.054, 0.100和0.159. X射线衍射表明, 主相为纤锌矿结构, x=0.100和 0.159的样品中含有CoO杂相. X射线光电子谱显示出Co有３种状态: 替代进入Z 关键词： 稀磁半导体 ZnO 共沉淀法 磁性来源     

Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO

1 MeV Cu²⁺ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 × 10¹⁷ ions/cm² at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at room-temperature and the saturation magnetization of this sample was estimated to be 0.12 μ_B per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu²⁺ (d⁹) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu¹⁺ (d¹⁰) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800 °C on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu₂O phase.     

Room-temperature ferromagnetism of diamagnetically-doped ZnO aligned nanorods fabricated by vapor reaction

Large-scale monocrystalline oxide-diluted magnetic semiconductor (ODMS) Zn_1−x Bi _x O nanorods arrays (NAs) were prepared within a large doping concentration range from 5% to 20% by a simple chemical vapor deposition. X-ray diffraction and high-resolution transmission electron microscopy reveal the monotonous expansion of the lattice constants with increasing Bi content, due to the effective Bi doping. In particular, room-temperature ferromagnetic (RTFM) behavior with Curie temperature over 363.7 K has been observed based on Bi-doped ZnO nanoarrays, whereas undoped ZnO NAs disappear. The RTFM origin is suggested, in which vacancies can be controlled to tune the FM. The as-formed RTFM NAs would have potential applications in many areas of advanced nanotechnology, such as new spintronic devices and magneto-optic components.     

Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

In this work patterned ZnO films were prepared at room-temperature by deposition of ∼5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation (λ = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.     

Mechanical properties of ZnO nanowires

Semiconductor nanowires are unique as functional building blocks in nanoscale electrical and electromechanical devices. Here, we report on the mechanical properties of ZnO nanowires that range in diameter from 18 to 304 nm. We demonstrate that in contrast to recent reports, Young's modulus is essentially independent of diameter and close to the bulk value, whereas the ultimate strength increases for small diameter wires, and exhibits values up to 40 times that of bulk. The mechanical behavior of ZnO nanowires is well described by a mechanical model of bending and tensile stretching.     

Ferromagnetism of V-doped ZnO nanowires

The geometry structures,electronic structures,and magnetic properties of Zn46V2O48 nanowires are studied by density functional theory(DFT) calculations.We find that the ferromagnetic(FM) coupling is more stable for six configurations of Zn46V2O48 nanowires,and is mediated by neighboring O as evidenced from the strong hybridization of V 3d and O 2p states,exhibiting strong spin polarization.The spin polarization is found to be 100% in the Zn46V2O48 nanowires,which confirms that it is a half-metallic ferromagnet and very suitable for the injection of the spin carriers,which shows that Zn46V2O48 nanowire is one of the ideal materials to realize spin electronic devices.At the same time,the magnetic coupling mechanisms of Zn46V2O48 nanowires are analyzed with V 3d and O 2p orbitals and their magnetic moments mainly come from the contributions of the unpaired electrons of V 3d orbitals.The above results provide a theoretical basis for the preparation of 3d transition metal-doped ZnO nanowire materials.     

Dielectrophoretic assembly of ZnO nanowires

The synthesis of zinc oxide （ZnO） nanowires is achieved by vapor phase transportation （VPT） method. The designed quartz tube, whose both ends are narrow and the middle is wider, is used to control the growth of ZnO nanowires. Dielectrophoresis （DEP） method is employed to align and manipulate ZnO nanowires which are ultrasonic dispersed and suspended in ethanol solution. Under the dielectrophoretic force, the nanowires are trapped on the pre-patterned electrodes, and further aligned along the electric field and bridge the electrode gap. The dependence of the alignment yield on the applied voltage and frequency is investigated.