Dynamic nuclear polarization by electrical spin injection in ferromagnet-semiconductor heterostructures

Electrical spin injection from Fe into AlxGa1-xAs quantum well heterostructures is demonstrated in small (<500 Oe) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal magnetic field in the semiconductor. This field is much larger than the applied field and depends strongly on the injection current density. Details of the observed hysteresis in the spin injection signal are reproduced in a model that incorporates the magnetocrystalline anisotropy of the epitaxial Fe film, spin relaxation in the semiconductor, and the dynamic polarization of nuclei by the injected spins.     

Optical spin resonances due to structure and bulk inversion asymmetry in heterostructures

Optical spin–flip excitations in the conduction band of III–V semiconductor heterostructures are considered theoretically taking into account structure inversion asymmetry (SIA) and bulk inversion asymmetry (BIA) of such systems. Possible spin transitions both in the absence of a magnetic field (B=0) as well as in the presence of a magnetic field B parallel to the growth direction [0 0 1] are investigated. The theory is based on the three-level model of the narrow-gap band structure including the BIA [Phys. Rev. 100 (1955) 580] and SIA [J. Phys. C. 17 (1984) 6039] contributions. We show in particular that the SIA mechanism not only results in the Bychkov–Rashba spin splitting at B=0 but it also gives rise to the possibility of optical transitions between the two spin-split energy branches.     

Magnetoluminescence of Ge/Ge1−x Six heterostructures

This paper reports on the first investigation made of luminescence of Ge/Ge_1−x Si_x heterostructures at liquid-helium temperatures in a magnetic field of up to 14 T. The luminescence lines observed in the spectra are due to both free and impurity bound excitons in Ge layers. The diamagnetic shift of the quasi-two-dimensional exciton has been measured. From the experimental data the size of the exciton has been estimated to be 75–90 Å. Zh. éksp. Teor. Fiz. 114, 619–627 (August 1998)     

Minority carrier lifetime in highly doped Ge

The minority carrier lifetime is measured in p-type Ge up to a majority carrier concentration of 10¹⁹ cm⁻³ using the photoconductive effect and the photo-magneto-electric effect. A stronger than linear dependence of the reciprocal lifetime on the carrier density is observed. Therefrom, from the weak temperature-dependence, from previous work and from the comparison with Si-data, we conclude that the dominant recombination mechanism at high carrier concentrations is the phonon-assisted band to band Auger-recombination. A transition coefficient of about 10⁻³¹ cm⁶ sec⁻¹ is estimated.     

High spin states in66,68Ge

High spin states of^66,68Ge have been investigated at the FN Tandem accelerator of the University of Köln via the reactions⁴⁰Ca(³²S,2p,4p)^66,68Ge at a beam energy of 100 MeV and⁵⁸Ni(¹⁶O,2p)⁶⁸Ge at 65 MeV. The OSIRIS spectrometer with 12 escape suppressed Ge detectors was used to measure coincidences and -ray angular distributions. In⁶⁶Ge (⁶⁸Ge) 33 (22) new levels were found and 63 (62) new -transitions were placed in the level scheme. Both nuclei show a rather complicated but similar excitation pattern, ruled by the interplay of quasiparticle and collective degrees of freedom. The results are compared to the recently published EXVAM calculations for⁶⁸Ge.Supported by German BMFT under contract No. 06 OK 143.     

Thermoelectric transport in strained Si and Si/Ge heterostructures

The anisotropic thermoelectric transport properties of bulk silicon strained in the [111]-direction were studied by detailed first-principles calculations focusing on a possible enhancement of the power factor. Electron and hole doping were examined in a broad doping and temperature range. At low temperature and low doping an enhancement of the power factor was obtained for compressive and tensile strain in the electron-doped case and for compressive strain in the hole-doped case. For the thermoelectrically more important high-temperature and high-doping regime a slight enhancement of the power factor was only found under small compressive strain with the power factor overall being robust against applied strain. To extend our findings the anisotropic thermoelectric transport of a [111]-oriented Si/Ge superlattice was investigated. Here, the cross-plane power factor under hole doping was drastically suppressed due to quantum-well effects, while under electron doping an enhanced power factor was found. For this, we state figures of merit of ZT?=?0.2 and 1.4 at T?=?300?and 900?K for the electron-doped [111]-oriented Si/Ge superlattice. All results are discussed in terms of band structure features.     

Shallow acceptors in Ge/GeSi multi-quantum well heterostructures

The experimental spectra of residual shallow acceptors in strained quantum well Ge/GeSi heterostructures are interpreted on the basis of a new theoretical approach taking into account both confinement and strain effects. It is shown that the main lines in the spectra of undoped samples with narrow quantum wells result from the photoexcitation of the on-edge acceptors that have binding energy two times less than on-center acceptors.     

Si基Ge异质结构发光器件的研究进展

近年来,与Si的CMOS工艺相兼容的Ge/Si异质结构发光器件取得很多重要的进展。本文概述了Si基Ge异质结构发光器件的最新成果,如Ge/Si量子点发光二极管、Si衬底上的Ge发光二极管及激光器和Ge/SiGe多量子阱发光二极管,分别描述了这些器件的特点和增强其发光特性的途径。最后展望了Si基Ge异质结构发光器件的发展趋势,指出尽管Si基Ge异质结构发光器件获得了很大的发展,但是器件的发光效率仍然很低,离实用还有一定距离,还需要在材料和器件的结构方面有更多的创新。     

Field-induced negative differential spin lifetime in silicon

We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte?Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.     

Hole spin relaxation in Ge quantum dots

Hole spin relaxation in an isolated Ge quantum dot due to interaction with phonons is investigated. Spin relaxation in this case occurs through the mechanism of the modulation of the spin-orbit interaction by lattice vibrations. According to the calculations performed, the spin relaxation time due to direct single-phonon processes for the hole ground state equals 1.4 ms in the magnetic field H = 1 T at the temperature T = 4 K. The dependence of the relaxation time on the magnetic field is described by the power function H^?5. At higher temperatures, a substantial contribution to spin relaxation is made by two-phonon (Raman) processes. Because of this, the spin relaxation time decreases to nanoseconds as the temperature is raised to T = 20 K. Analysis of transition probabilities shows that the third and twelfth excited hole states, which are intermediate in two-step relaxation processes, play the main part in Raman processes.     

Antiphase disorder in GaAs/Ge heterostructures for solar cells

Antiphase disorder in metal organic vapour phase epitaxy grown GaAs/(100)Ge heterostructures has been studied both in as-grown materials and in GaAs solar cells by chemical etching, transmission electron microscopy, and cathodoluminescence. All the samples are single domains at the surface due to the self-annihilation of antiphase domains whose size decreases as the misorientation angle increases. Completely antiphase domain-free epitaxy has been achieved for substrate miscuts greater than 3 degrees off towards [111]. A reversal in sublattice location has been found in the GaAs layers varying the misorientation angle and the growth temperature. A model to explain this result has been proposed based on the role of surface steps in the nucleation process. Strong interaction between antiphase boundaries and misfit dislocations has been found in all the heterostructures. In solar cells antiphase domains have been observed in high densities in the initial layer of GaAs deposited on Ge. The successful realisation of high efficiency solar cells is due to the overgrowth of these domains by single phase material over most of the wafer area.     

光参量荧光寿命分布

根据荧光寿命定义和放大过程获得的增益方程,研究了新型非线性晶体BaAlBO3F2中三种不同的相位匹配模式下中心波长532 nm泵浦的参量荧光光子寿命的分布特性。结果表明,当注入单色信号光时,参量荧光寿命随泵浦光相位匹配角的增加由椭圆体分布变化为圆环体分布。采用宽带信号光时,则由分散分布改变为集中在近200 nm波长范围内分布,并随泵浦光相位匹配角的增加而逐步减小。考虑宽带泵浦光注入情况时,参量荧光寿命的分布范围由于相位匹配范围增加而随之扩展。     

光参量荧光寿命分布

 根据荧光寿命定义和放大过程获得的增益方程,研究了新型非线性晶体BaAlBO₃F₂中三种不同的相位匹配模式下中心波长532 nm泵浦的参量荧光光子寿命的分布特性。结果表明,当注入单色信号光时,参量荧光寿命随泵浦光相位匹配角的增加由椭圆体分布变化为圆环体分布。采用宽带信号光时,则由分散分布改变为集中在近200 nm波长范围内分布,并随泵浦光相位匹配角的增加而逐步减小。考虑宽带泵浦光注入情况时,参量荧光寿命的分布范围由于相位匹配范围增加而随之扩展。     

Optical characteristics of quantum-well heterostructures in saturation conditions

The resalts of theoretical investugation for spectral characterstics of gain, refraction index of QW heterostructures depending on quantum layer thickness the value of saturation field, as well as their field dependence are presented.