Structure,Electrical,and Optical Properties of Nb-doped BaTiO3 Thin Films Grown by Laser Molecular Beam Epitaxy

Structure,electrical,and optical properties of Nb-doped BaTiO3 (Nb:BTO) thin films on MgO substrates grownby laser molecular beam epitaxy with increasing Nb content were investigated.The Nb:BTO thin films with high crystallinity are epitaxially grown on MgO substrates.With more Nb-doped content,the impurity phases are found in Nb:BTO thin films.Hall measurement at room temperature confirms that the charge carriers of the Nb:BTO thin films are n-type.When the Nb-doped content increases,the carrier concentration and carrier mobility increase.Meanwhile the optical transmittance decreases with the increase of the Nb-doping,and the width of the forbidden band in each group is not affected by the presence of Nb in the samples.Raman spectra show that the structural phase transition may occur with the increase of the Nb-doping content,in the meantime more defects and impurities exist in the Nb:BTO thin films.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO₃ ferroelectric film

BaTiO3(BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode(LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence(PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence(EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L’Eclairage(CIE) coordinate of EL is(0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures(200℃-400℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.     

Laser Molecular Beam Epitaxy Growth of BaTiO3 in Seven Thousands of Unit-Cell Layers

BaTiO3 thin films in seven thousands of unit-cell layers have been successfully fabricated on SrTiO3 （001） substrates by laser molecular beam epitaxy. The fine streak pattern and the undamping intensity oscillation of reflection high-energy electron diffraction indicate that the BaTiO3 film was layer-by-layer epitaxial growth. The measurements of scanning electron microscopy and atomic force microscopy show that surfaces of the BaTiO3 thin film are atomically smooth. The measurements of x-ray diffraction and transmission electron microscopy, as well as selected-area electron diffraction reveal that the BaTiO3 thin film is a c-oriented epitaxial crystalline structure.     

Magnetizations and magneto-transport properties of Ni-doped PrFeO_3 thin films

The present study reports the magnetizations and magneto-transport properties of PrFe1-xNixO3 thin films grown by pulsed laser ablation technique on LaAlO3substrates. From DC M/H plots of these films, weak ferromagnetism or ferrimagnetism behaviors are observed. With Ni substitution, reduction in saturation magnetization is also seen. With Ni doping, variations in saturation field(Hs), coercive field(Hc), Weiss temperature(θ), and effective magnetic moment(peff)are seen. A small change of magnetoresitance with application of higher field is observed. Various essential parameters like density of state(Nf) at Fermi level, Mott's characteristic temperature(T0), and activation energy(Ea) in the presence of and in the absence of magnetic field are calculated. The present observed magnetic properties are related to the change of Fe–O bond length(causing an overlap between the oxygen p orbital and iron d orbital) and the deviation of the Fe–O–Fe angle from 180?. Reduction of magnetic domain after Ni doping is also explored to explain the present observed magnetic behavior of the system. The influence of doping on various transport properties in these thin films indicates a distortion in the lattice structure and single particle band width, owing to stress-induced reduction in unit cell volume.     

Low temperature ferromagnetic properties of CdS and CdTe thin films

The magnetic property in a material is induced by the unpaired electrons. This can occur due to defect states which can enhance the magnetic moment and the spin polarization. In this report, CdS and CdTe thin films are grown on FTO glass substrates by chemical bath deposition and close-spaced sublimation, respectively. The magnetic properties, which are introduced from oxygen states, are found in CdS and CdTe thin films. From the hysteresis loop of magnetic moment it is revealed that CdS and CdTe thin films have different kinds of magnetic moments at different temperatures. The M–H curves indicate that from 100 K to 350 K, CdS and CdTe thin films show paramagnetism and diamagnetism, respectively.A superparamagnetic or a weakly ferromagnetic response is found at 5 K. It is also observed from ZFC/FC curves that magnetic moments decrease with temperature increasing. Spin polarized density functional calculation for spin magnetic moment is also carried out.     

Magnetic behaviors of cerium oxide-based thin films deposited using electrochemical method

Zn and Co multi-doped CeO2 thin films have been prepared using an anodic electrochemical method. The structures and magnetic behaviors are characterized by several techniques, in which the oxygen states in the lattice and the absorptive oxygen bonds at the surface are carefully examined. The absorptive oxygen bond is about 50% of the total oxygen bond by using a semi-quantitative method. The value of actual stoichiometry δ is close to 2. The experimental results indicate that the thin films are of a cerium oxide-based solid solution with few oxygen vacancies in the lattice and many absorptive oxygen bonds at the surface. Week ferromagnetic behaviors were evidenced by observed M–H hysteresis loops at room temperature. Furthermore, an evidence of relative ferromagnetic contributions was revealed by the temperature dependence of magnetization. It is believed that the ferromagnetic contributions exhibited in the M–H loops originate from the absorptive oxygen on the surface rather than the oxygen vacancies in the lattice.     

The transverse laser induced thermoelectric voltages in step flow growth （1-x）Pb(Mg1/3Nb2/3)O3-xPbTiO3 thin films

This paper reports that the transverse laser induced thermoelectric voltages (LITV) are observed for the first time in the step flow growth (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT,x = 0.20, 0.33, 0.50) thin films deposited on vicinal-cut strontium titanate single crystal substrates. Because lead magnesium niobate-lead titanate is a solid solution of lead magnesium niobate (PMN) and lead titanate (PT), there are two types of signals. One is wide with a time response of a microsecond, and the other superimposed with the wide signal is narrow with a time response of a nanosecond. The transverse LITV signals depend on the ratio of PMN to PT drastically. Under the irradiation of 28-ns pulsed KrF excimer laser with the 248-nm wavelength,the largest induced voltage is observed in the 0.50Pb(Mg1/Nb2/3)O3-0.50PbTiO3 films. Moreover, the effects of film thickness, substrates, and tilt angles of substrates are also investigated.     

Magnetizations and magneto-transport properties of Ni-doped PrFe03 thin films

The present study reports the magnetizations and magneto-transport properties of PrFel_xNixO3 thin films grown by pulsed laser ablation technique on LaA103 snbstrates. From DC M/H plots of these films, weak ferromagnetism or ferrimagnetism behaviors are observed. With Ni substitution, reduction in saturation magnetization is also seen. With Ni doping, variations in saturation field （Hs）, coercive field （Hc）, Weiss temperature （0）, and effective magnetic moment （Pelf） are seen. A small change of magnetoresitance with application of higher field is observed. Various essential parameters like density of state （Nf） at Fermi level, Mott＇s characteristic temperature （To）, and activation energy （Ea） in the presence of and in the absence of magnetic field are calculated. The present observed magnetic properties are related to the change of Fe-O bond length （causing an overlap between the oxygen p orbital and iron d orbital） and the deviation of the Fe-O-Fe angle from 180~. Reduction of magnetic domain after Ni doping is also explored to explain the present observed magnetic behavior of the system. The influence of doping on various transport properties in these thin films indicates a distortion in the lattice structure and single particle band width, owing to stress-induced reduction in unit cell volume.     

Effect of Annealing on Ferroelectric Properties of Nanometre BaTiO3 Ceramics Prepared by High Pressure Sintering Method

Dense nanocrystalline BaTiO3 ceramics with a grain size of 5Onto are prepared under 6 GPa at 1273K using a high pressure sintering method. The sintered bulk is uniform and the relative density is above 97%. We anneal the ceramic samples in oxygen with various temperatures and for the annealing, several broadened peaks can be observed at different times without apparent grain growth. After about 378K（ by dielectric measurements. However, these peaks are very different from those of coarser-grained ceramics. It is indicated that both the elimination of oxygen vacancies and the release of residual stresses caused by high pressure greatly improve the overall ferroelectric properties of BaTiO3 ceramics. The observation of nearly linear polarization hysteresis loop after anneal provides the solid evidence of ferroelectricity in these nano-sized BaTiO3 ceramics. It is believed that the absence of 90° domains and the existence of poor-permittivity nonferroelectric grain boundaries contribute to the slim loop.     

Ultrafast nonlinear optical response of Ag:BaTiO_3 composite films at the near-ultraviolet wavelengths

The ultrafast nonlinear optical response of Ag:BaTiO3 composite films synthesized by pulse laser deposition (PLD) is studied at the near-ultraviolet (400 nm) wavelength. The pulse duration of the laser used in the measurement is 200 fs. The real and imaginary parts of the third-order nonlinear susceptibility X(3) of the composite materials are measured. The composite films indicate self-focusing effect and nonlinear saturation, the values of ReX(3) and ImX(3) are measured to be 3.42 × 10-10 and -1.37 × 10-10 esu respectively, which are much lower than those reported before. It is mainly because that the duration of the laser used in the measurements is too short to induce the hot electron excitation and the thermal effect. The ultrafast nonlinear saturated absorption response of the Ag:BaTiO3 composite films may have potential applications for femtosecond laser mode locking.     

Tunable superconductivity in parent cuprate Pr_2CuO_(4±δ) thin films

We studied the role of oxygen in Pr2 CuO_(4±δ) thin films fabricated by the polymer assisted deposition method. The magnetoresistance and Hall resistivity of Pr2 CuO_(4±δ) samples were systematically investigated. It was found that with decreasing oxygen content, the low-temperature Hall coefficient(RH) and magnetoresistance changed from negative to positive, similar to those with the increase of Ce-doped concentration in R_(2-x)Ce_x CuO_4 (R = La, Nd, Pr, Sm, Eu). In addition, we observed that the dependence of the superconducting critical temperature Tc with RH for the Pr_(2-x) Ce_x CuO_4 perfectly overlapped with that of Pr_2 CuO_(4±δ) . These findings point to the fact that the doped electrons induced by the oxygen removal are responsible for the superconductivity of the T-phase parent compounds.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric thin film are studied. The photolumineseence （PL） of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence （EL） spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L＇Eclairage （CIE） coordinate of EL is （0.2139, 0.1627）. EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures （200 ℃-400 ℃）. It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.     

Composition influence on the microstructures and magnetic properties of FePt thin films

The Fex Pt 100x (10nm) (x=31-51) thin films are fabricated on Si (100) substrates by using magnetron sputtering. The highly ordered L1 0 FePt phase is obtained after post-annealing at 700℃in Fe 47 Pt 53 thin film. The sample shows good perpendicular anisotropy with a square loop and a linear loop in the out-of-plane and the in-plane direction, respectively. The variations of the magnetic domains are investigated in the films when the content value of Fe changes from 31% to 51%.     

Vacuum Annealing Induced Room-Temperature Ferromagnetism in Co0.1Ti0.9O2-δ Films Prepared by Sol-Gel Method

The Co-doped TiO2 films （Co0.1Ti0.9O2-δ） are prepared on silicon substrates by sol-gel method and post annealing. TheCo0.1Ti0.9O2-δ film annealed in air is non-ferromagnetic at room temperature. After further annealed in a vacuum, the room-temperature ferromagnetism （RTFM） is observed. Experimental evidences show that the RTFM in the Co0.1Ti0.9O2-δ film may come from the Co-doped TiO2 matrix and is related to the oxygen vacancies created by vacuum annealing.     

Growth and transport features of electron-doped superconductor Pr1-xLaCexCuO4-δ thin films

<正>T’-phase electron-doped superconductor Pr_1-xLaCe_xCuO_4-δ（PLCCO） thin films are successfully prepared on SrTiO₃（100） substrates by using the dc magnetron sputtering method.It is found that the films each have a highly oriented structure along the c-axis.For optimally doped films with x≈0.10,the superconducting transition temperature T_c is 23.5 K,which is similar to that of a single crystal.The quadratic temperature dependence of the resistivity is observed when T > T_c,which can be attributed to the two-dimensional Fermi liquid behaviour.Besides,the optimal conditions for preparing the T’-phase PLCCO thin films are also discussed in detail.     

Anomalous in-plane magnetoresistance of electron-doped cuprate La_(2.x)Ce_xCuO_(4±δ)

We report systematic in-plane magnetoresistance measurements on the electron-doped cuprate La_(2.x)Ce_xCuO_(4±δ) thin films as a function of Ce doping and oxygen content in the magnetic field up to 14 T. A crossover from negative to positive magnetoresistance occurs between the doping level x = 0.07 and 0.08. Above x = 0.08, the positive magnetoresistance effect appears, and is almost indiscernible at x = 0.15. By tuning the oxygen content, the as-grown samples show negative magnetoresistance effect, whereas the optimally annealed ones display positive magnetoresistance effect at the doping level x = 0.15. Intriguingly, a linear-field dependence of in-plane magnetoresistance is observed at the underdoping level x = 0.06, the optimal doping level x = 0.1 and slightly overdoping level x = 0.11. These anomalies of in-plane magnetoresistance may be related to the intrinsic inhomogeneity in the cuprates, which is discussed in the framework of network model.     

Field-induced insulator-metal-insulator transitions in low-energy H_2~+ ion-irradiated epitaxial La_(2/3)Ca_(1/3)MnO_3 thin films

Epitaxial La 2/3 Ca 1/3 MnO 3 thin films grown on LaAlO 3 (001) substrates were irradiated with low-energy 120-keV H 2 + ions over doses ranging from 10 12 ions/cm 2 to 10 17 ions/cm 2 . The irradiation suppresses the intrinsic insulator-metal (I-M) transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 × 10 15 ions/cm 2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

Optical properties of rubrene thin film prepared by thermal evaporation

Rubrene thin films are deposited on quartz substrates and silver nanoparticles(Ag NPs) films by the thermal evaporation technique. The optical properties of rubrene thin film are investigated in a spectral range of 190 nm–1600 nm. The analysis of the absorption coefficient(α) reveals direct allowed transition with a corresponding energy of 2.24 e V. The photoluminescence(PL) peak of the rubrene thin film is observed to be at 563 nm(2.21 e V). With the use of Ag NPs which are fabricated by radio-frequency(RF) magnetron sputtering on the quartz, the PL intensity is 8.5 times that of as-deposited rubrene thin film. It is attributed to the fact that the surface plasmon enhances the photoluminescence.     

COHERENT OPTICAL PHONON EXCITATION BY FEMTOSECOND LASER PULSE IN YBa2Cu3O7-δ THIN FILMS

With a correlation of nonequilibrium carriers relaxation and coherent phonons displacive excitation, the coherent optical phonon oscillations in YBa₂Cu₃O_7-δ thin films excited by femtosecond laser pulse are simulated theoretically. It is revealed that as the oxygen concentration decreases, the coherent phonon oscillations become easier to be observed due to the decrease of the local coupling between the carriers and the lattice vibrations in the CuO₂ plane.     

Effect of Temperature on Structural and Magnetic Properties of Laser Ablated Iron Oxide Deposited on Si（100）

We fabricate Fe3O4 thin films on Si（100） substrates at different temperatures using pulsed laser deposition, and study the effect of annealing and deposition temperature on the structural and magnetic properties of Fe3O4 thin films. Subsequently, the films are characterized by x-ray diffraction （XRD）, scanning electron microscopy （SEM） and vibrating sample magnetometery （VSM）. The XRD results of these films confirm the presence of the Fe3O4 phase and show room-temperature ferromagnetism, as observed with VSM. We demonstrate the optimized deposition and annealing conditions for an enhanced magnetization of 854 emu/cm3 that is very high when compared to the bulk sample.