Ag-Cu纳米颗粒修饰的N掺杂TiO2纳米棒阵列及其高效光催化CO2还原应用

本文采用微纳加工方法制备了负载高密度Ag-Cu纳米颗粒的N掺杂TiO₂纳米棒阵列样品. 通过TiO₂的N掺杂,可将其吸光范围调控至与Ag纳米颗粒的等离激元吸收频率相匹配的波段,从而实现复合材料中肖特基结与共振能量转移过程的协同作用. 与此同时,Cu纳米颗粒可以为CO₂还原提供活性位点. 在全谱光照射下,复合样品光催化CO₂还原的活性显著提高,CH₄生成速率可达720 μmol·g^-1·h^-1.     

热原子层沉积氧化铝对硅的钝化性能及热稳定性

原子层沉积氧化铝已经成为应用于钝化发射极和背面点接触（PERC）型晶硅太阳能电池优异的钝化材料．对于基于丝网印刷技术的太阳能电池,钝化材料的钝化效果及其热稳定性是非常重要的．本文在太阳能级硅片上用热原子层沉积设备制备了20nm和30nm的氧化铝,少子寿命测试结果显示初始沉积的氧化铝薄膜具有一定的钝化效果,在退火后可达到100μs以上,相当于硅表面复合速度小于100cm／s．经过制备传统晶硅太阳能电池的烧结炉后,少子寿命能够保持在烧结前的一半以上,可应用于工业PERC型电池的制备．通过电子显微镜观察到了较厚的氧化铝薄膜有气泡,解释了30nm氧化铝比20nm氧化铝钝化性能和稳定性更差的异常表现．     

超声强化合成MgFe2O4纳米颗粒及其机理研究

用超声水解方法制备MgO纳米颗粒,用化学沉淀法制备α-Fe₂O₃纳米颗粒,将MgO/α-Fe₂O₃混合体常温下超声活化2h,400℃固相合成制备出MgFe₂O₄纳米颗粒.通过X射线衍射和透射电子显微镜测试产品的化学成分、晶体结构和形貌尺寸,分析声化学反应机理及其影响因素.研究结果表明:所制备的MgFe₂O₄为尖晶石铁氧体,颗粒尺寸分布在20-30nm之间,粒度分布均匀;超声空化效应提高了化学反应活性、增加反应物的比表面积和反应物之间的接触面积,促进固相合成反应速度,降低反应温度,实现了一般条件下难以完成的化学反应.     

硼(氮、氟)掺杂对TiO2纳米颗粒光学性能的影响

利用X射线衍射谱、拉曼光谱和紫外-可见光吸收光谱研究了硼(氮、氟)掺杂对TiO₂纳米颗粒光学性能的影响.X射线衍射谱和拉曼光谱结果表明,掺硼(氮、氟)对TiO₂纳米颗粒的锐钛矿相晶体结构无明显影响,而其锐钛矿晶格出现畸变(c/a值增大),这被归因于掺杂原子对TiO₂纳米颗粒表面氧原子缺位沿晶格c轴方向的占据.另外,掺硼(氮、氟)TiO₂纳米颗粒吸收带红移与TiO相似文献   

由纳米管和纳米颗粒构成的TiO2膜的制备与机理研究

采用聚苯乙烯小球修饰Ti片表面,并进行阳极氧化,制备出一种由纳米颗粒和纳米管构成的TiO₂膜．通过数值模拟,分析了氧化表面附近的局部电场分布对TiO₂膜形貌的影响．结果表明,覆盖物增强了局部电场,从而加快了O^2-与Ti的反应速率,有利于TiO₂的生长;与此同时,[TiF₆]^6-的扩散受到阻碍,使得TiO₂的溶解速率减慢．可见,覆盖物打破了TiO₂纳米管形成的平衡条件,导致纳米颗粒的生成．此外,通过X射线衍射和Raman光谱的测试分析发现,所制备的TiO₂为锐钛矿结构.     

Al2O3钝化及其在晶硅太阳电池中的应用

介绍了Al₂O₃的材料性质及其原子层沉积制备方法, 详细阐述了该材料的钝化机制(化学钝化和场效应钝化), 并从薄膜厚度、热稳定性及叠层钝化等角度阐释其优化方案. 概述了Al₂O₃钝化在晶体硅太阳电池中的应用, 主要包括钝化发射极及背面局部扩散电池和钝化发射极及背表面电池. 最后, 对Al₂O₃钝化工艺的未来研究方向和大规模的工业应用进行了展望.     

金红石相和锐钛矿相TiO2本征缺陷的第一性原理计算

采用第一性原理的计算方法, 分别研究了金红石相和锐钛矿相TiO₂各种缺陷态形成的类型, 以及几何结构、生长气氛和Fermi能级位置对缺陷形成能的影响, 从理论上预测产生点缺陷的实验条件. 重点是讨论带电点缺陷的形成能, 并对结果进行适当修正. 研究发现, 本征缺陷的类型和浓度对 TiO₂的性能有一定的影响: 在富O条件下, TiO₂容易形成V_Ti(Ti空位)缺陷; 在富Ti条件下, TiO₂的Ti_i⁴⁺和V_O(O空位)缺陷将大量出现, 形成Schottky缺陷.     

用SRXRF研究纳米TiO2颗粒沿小鼠嗅觉神经系统的迁移

利用同步辐射X射线荧光技术(SRXRF)的微区(达十几微米)分析特性分析了小鼠经不同尺寸的TiO₂染毒后,钛元素在嗅球和大脑切片中的空间微区分布状况, 结果表明吸入的TiO₂能够通过鼠的嗅觉神经系统进入到嗅球的外部嗅觉神经层、内部粒状细胞层、嗅觉脑室区, 并进一步迁移至大脑的皮质、海马和丘脑区,且微米尺寸的TiO₂分布范围比纳米尺寸的更大一些.     

Sb2Te3 纳米结构的制备与表征

以室温热电性能优异的传统热电材料Sb₂Te₃为研究对象,利用化学气相沉积法制备Sb₂Te₃单晶纳米结构,并研究其生长机理.实验结果表明,不加催化剂时Sb₂Te₃易生长成六方纳米盘,在金催化剂条件下定向生长成纳米线.Sb₂Te₃的形貌与其晶体结构和生长机理有关.Sb₂Te₃为三角结构,Sb和     

多铁性BiFeO3纳米颗粒的尺寸依赖磁性能研究

采用乙二胺四乙酸杂化溶胶法制备了不同晶粒尺寸的纯相BiFeO₃纳米颗粒,并利用X射线衍射仪、扫描电镜、超导量子干涉仪和Mossbauer 谱系统研究了其结构、形貌以及磁性能.结果表明: BiFeO₃纳米颗粒具有明显的弱铁磁性,并呈现强烈的尺寸依赖特性; 这种弱铁磁性主要源于纳米材料的尺寸限制效应,而非杂质相或Fe²⁺ 的存在所致.     

In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution

GaSb(0 0 1) was treated with (NH₄)₂S_x and the evolution of the interfacial chemistry was investigated, in situ, with monochromatic X-ray photoelectron spectroscopy (XPS), following heat treatment and exposure to trimethylaluminum (TMA) and deionized water (DIW) in an atomic layer deposition reactor. Elemental Sb (Sb-Sb bonding) as well as Sb³⁺ and Sb⁵⁺ chemical states were initially observed at the native oxide/GaSb interface, yet these diminished below the XPS detection limit after heating to 300 °C. No evidence of Ga-Ga bonding was observed whereas the Ga¹⁺/Ga-S chemical state was robust and persisted after heat treatment and exposure to TMA/DIW at 300 °C.     

The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method

We produced dielectric stacks composed of ALD SiO₂ and ALD Al₂O₃, such as SiO₂/Al₂O₃, Al₂O₃/SiO₂, and SiO₂/Al₂O₃/SiO₂, and measured the leakage currents through the stacks in comparison with those of the single oxide layers. SiO₂/Al₂O₃ shows lowest leakage current for negative bias region below 6.4 V, and Al₂O₃/SiO₂ showed highest current under negative biases below 4.5 V. Two distinct electron conduction regimes are observed for Al₂O₃ and SiO₂/Al₂O₃. Poole-Frenkel emission is dominant at the high-voltage regime for both dielectrics, whereas the direct tunneling through the dielectric is dominant at the low-voltage regime. The calculated transition voltage between two regimes for SiO₂ (6.5 nm)/Al₂O₃ (12.6 nm) is −6.4 V, which agrees well with the experimental observation (−6.1 V). For the same EOT of entire dielectric stack, the transition voltage between two regimes decreases with thinner SiO₂ layer.     

Chemical quenching of positronium in Fe2O3/Al2O3 catalysts

Fe₂O₃/Al₂O₃ catalysts were prepared by solid state reaction method using α-Fe₂O₃ and γ-Al₂O₃ nano powders. The microstructure and surface properties of the catalyst were studied using positron lifetime and coincidence Doppler broadening annihilation radiation measurements. The positron lifetime spectrum shows four components. The two long lifetimes τ₃ and τ₄ are attributed to positronium annihilation in two types of pores distributed inside Al₂O₃ grain and between the grains, respectively. With increasing Fe₂O₃ content from 3 wt% to 40 wt%, the lifetime τ₃ keeps nearly unchanged, while the longest lifetime τ₄ shows decrease from 96 ns to 64 ns. Its intensity decreases drastically from 24% to less than 8%. The Doppler broadening S parameter shows also a continuous decrease. Further analysis of the Doppler broadening spectra reveals a decrease in the p-Ps intensity with increasing Fe₂O₃ content, which rules out the possibility of spin-conversion of positronium. Therefore the decrease of τ₄ is most probably due to the chemical quenching reaction of positronium with Fe ions on the surface of the large pores.     

Effect of TiO2/Al2O3 film coated diamond abrasive particles by sol-gel technique

The diamond abrasive particles were coated with the TiO₂/Al₂O₃ film by the sol-gel technique. Compared with the uncoated diamonds, the TiO₂/Al₂O₃ film was excellent material for the protection of the diamonds. The results showed that the incipient oxidation temperature of the TiO₂/Al₂O₃ film coated diamonds in air atmosphere was 775 °C, which was higher 175 °C than that of the uncoated diamonds. And the coated diamonds also had better the diamond's single particle compressive strength and the impact toughness than that of uncoated diamonds after sintering at 750 °C. For the vitrified bond grinding wheels, replacing the uncoated diamonds with the TiO₂/Al₂O₃ film coated diamonds, the volume expansion of the grinding wheels decreased from 6.2% to 3.4%, the porosity decreased from 35.7% to 25.7%, the hardness increased from 61.2H_RC to 66.5H_RC and the grinding ratio of the vitrified bond grinding wheels to carbide alloy (YG8) increased from 11.5 to 19.1.     

The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment

This paper discusses the effect of N 2 plasma treatment before dielectric deposition on the electrical performance of a Al2O3 /AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor(MISHEMT),with Al2O3 deposited by atomic layer deposition.The results indicated that the gate leakage was decreased two orders of magnitude after the Al2O3 /AlGaN interface was pretreated by N 2 plasma.Furthermore,effects of N 2 plasma pretreatment on the electrical properties of the AlGaN/Al2O3 interface were investigated by x-ray photoelectron spectroscopy measurements and the interface quality between Al2O3 and AlGaN film was improved.     

Deposition and characterization of binary Al2O3/SiO2 coating layers on the surfaces of rutile TiO2 and the pigmentary properties

Binary Al₂O₃/SiO₂-coated rutile TiO₂ composites were prepared by a liquid-phase deposition method starting from Na₂SiO₃·9H₂O and NaAlO₂. The chemical structure and morphology of binary Al₂O₃/SiO₂ coating layers were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, TG-DSC, Zeta potential, powder X-ray diffraction, and transmission electron microscopy techniques. Binary Al₂O₃/SiO₂ coating layers both in amorphous phase were formed at TiO₂ surfaces. The silica coating layers were anchored at TiO₂ surfaces via Si-O-Ti bonds and the alumina coating layers were probably anchored at the SiO₂-coated TiO₂ surfaces via Al-O-Si bonds. The formation of continuous and dense binary Al₂O₃/SiO₂ coating layers depended on the pH value of reaction solution and the alumina loading. The binary Al₂O₃/SiO₂-coated TiO₂ composites had a high dispersibility in water. The whiteness and brightness of the binary Al₂O₃/SiO₂-coated TiO₂ composites were higher than those of the naked rutile TiO₂ and the SiO₂-coated TiO₂ samples. The relative light scattering index was found to depend on the composition of coating layers.     

Interfacial reactions and oxidation behavior of Al2O3 and Al2O3/Al coatings on an orthorhombic Ti2AlNb alloy

The uniform and dense Al₂O₃ and Al₂O₃/Al coatings were deposited on an orthorhombic Ti₂AlNb alloy by filtered arc ion plating. The interfacial reactions of the Al₂O₃/Ti₂AlNb and Al₂O₃/Al/Ti₂AlNb specimens after vacuum annealing at 750 °C were studied. In the Al₂O₃/Ti₂AlNb specimens, the Al₂O₃ coating decomposed significantly due to reaction between the Al₂O₃ coating and the O-Ti₂AlNb substrate. In the Al₂O₃/Al/Ti₂AlNb specimens, a γ-TiAl layer and an Nb-rich zone came into being by interdiffusion between the Al layer and the O-Ti₂AlNb substrate. The γ-TiAl layer is chemically compatible with Al₂O₃, with no decomposition of Al₂O₃ being detected. No internal oxidation or oxygen and nitrogen dissolution zone was observed in the O-Ti₂AlNb alloy. The Al₂O₃/Al/Ti₂AlNb specimens exhibited excellent oxidation resistance at 750 °C.     

Al2O3绝缘层的AlGaN/GaN MOSHEMT器件研究

在研制AlGaN/GaN HEMT器件的基础上,采用ALD法制备了Al₂O₃ AlGaN/GaN MOSHEMT器件.通过X射线光电子能谱测试表明在AlGaN/GaN异质结材料上成功淀积了Al₂O₃薄膜.根据对HEMT和MOSHEMT器件肖特基电容、器件输出以及转移特性的测试进行分析发现：所制备的Al₂O₃薄膜与AlGaN外延层间界面态密度较小,因而MOSHEMT器件呈现出较 关键词： 2O₃')" href="#">Al₂O₃ ALD GaN MOSHEMT     

SMA-g-MPEG comb-like polymer as a dispersant for Al2O3 suspensions

SMA-g-MPEG comb-like polymer is first employed as the dispersant of Al₂O₃ suspensions in this paper. The comb-like polymer has anionic polycarboxylate backbone, which makes the polymer easily absorbed on the cationic surface of Al₂O₃ particles; on the other hand, the comb-like polymer has hydrophilic MPEG side chains, which extend into the solution to provide steric repulsion after the comb-like polymer is absorbed on the surface of Al₂O₃ particles. The adsorption behavior, zeta potential, apparent viscosity, granularity and TEM images of the Al₂O₃ suspensions using SMA-g-MPEG as dispersant are investigated. The addition of SMA-g-MPEG improves the dispersibility and decreases the apparent viscosity of the Al₂O₃ suspension observably. The impacts of the length of side chains on the dispersion of Al₂O₃ suspensions are particularly discussed. The adsorbed molecular number of the dispersant decreased by increasing the length of side chains. The zeta potential of Al₂O₃ suspension is more negative by using comb-like polymer with shorter side chains. Based on the steric repulsion and adsorbed molecular number, SMA-g-MPEG with moderate length of side chain is found to have the best dispersibility for Al₂O₃ suspension.