A comparative study of phase-shifting algorithms in digital speckle pattern interferometry

Digital speckle pattern interferometry (DSPI) is a tool for making qualitative as well as quantitative measurements of deformation of objects. Phase-shifting algorithms in DSPI are useful for extracting quantitative deformation data from the system. Comparative studies of the different phase-shifting algorithms in DSPI for object deformation measurement are presented. Static and quasi-dynamic deformation of the object can be measured using these algorithms. Error compensating five-step phase-shifting method is used for the algorithms.     

Measurement of sub-surface delaminations in carbon fibre composites using high-speed phase-shifted speckle interferometry and temporal phase unwrapping

A high-speed phase-shifted speckle interferometer has been developed recently for studying dynamic events. Speckle interferograms are continuously recorded by a CCD camera operating at 1 kHz with temporal phase shifting carried out by a Pockels cell running at the same frequency. Temporal phase unwrapping through sequences of more than 1000 frames allows the determination of time-varying absolute displacement maps. This paper presents the application of this speckle interferometry system to the detection and measurement of sub-surface delamination defects in carbon fibre specimens. The influence of re-referencing the temporal phase unwrapping algorithm after different time intervals is analysed to reduce the random phase errors produced by speckle decorrelation and vibration. The performance of several phase-shifting algorithms to minimize the influence of the vibration noise caused by the vacuum pump used to load the specimen is also investigated.     

Determination of strain and stress distribution on shearwalls by using the speckle photography technique

Speckle photography (SP) is a powerful tool that is adequate to determine small displacements in micrometer range. This information shows other characteristics of structure deformation under loads and can be determined as stress and strain distribution. In this paper we present the results of the application of the SP technique used to study the behaviour of discontinuities in a shearwall model. These structural elements are very important to the stability of buildings. The displacement whole field around the discontinuities and loading points was determined using the pointwise method. This allows us to determine stress distribution at the point of interest by means of the suitable equations. We also present the stress distribution obtained through the finite element method in order to compare the results obtained by means of these two techniques. Good correspondence was found between the displacements determined by both techniques (r=0.982) and also between the stress values we obtained.     

The quantitative analysis of a two-medium mixture using holographic interferometry: the determination of the size corresponding to circular- and rectangular-column voids in a two-medium mixture

The purpose of this paper is to extend the holographic technique to the optical measurement of a two-medium mixture. Assume there exists a void in medium A and the void contains medium B, an experimental technique and the corresponding theories are proposed in this paper, in order to quantitatively determine the size of void in the two-medium mixture. Then the amount of medium B can be determined. An empty glass container was simulated as a void in the mixture. Two different types of glass containers were used and the corresponding theories were derived. The test results show that the errors were in a reasonable range and support the application of holography in the quantitative optical measurement of a two-medium mixture.     

Study on the mechanism of dark enhancement in phenanthrenequinone-doped poly(methyl methacrylate) photopolymer for holographic recording

The dark enhancements with various exposure energies are studied in thick PQ/PMMA photopolymer. Considered the weak molecules diffusion of PQ component and the grating detuning, a new mechanism of dark reaction is proposed to explain the dark enhancement. Moreover, the influences of dark reaction on Bragg angular selectivity and grating recording are analyzed. The results are beneficial to the practical holography application.     

Characterisation of light emitting diodes (LEDs) for application in digital holographic microscopy for inspection of micro and nanostructured surfaces

Partial coherent light sources open up prospects for phase noise reduction in digital holographically reconstructed phase distributions by suppressing multiple reflections in the experimental setup. Thus, light emitting diodes (LEDs) are investigated for application in digital holographic microscopy. First, the spectral properties and the resulting coherence length of an LED are characterised. In addition, an analysis of dispersion effects and their influence on the hologram formation is carried out. The coherence length of LEDs in the range of a few micrometers restricts the maximum interference fringe number in off-axis holography for spatial phase shifting. Thus, the application of temporal phase-shifting-based digital holographic reconstruction techniques is compared to spatial phase-shifting-based methods. It is demonstrated that LEDs are applicable for digital holographic microscopy in connection with both spatial and temporal phase-shifting-based techniques for reduction of noise in comparison to a laser-light-based experimental setup.     

Methods for simulating the readout of lengths and angles in laser interferometers with Gaussian beams

In this paper methods to simulate the signals in laser interferometers are proposed. The central part deals with the computation of the photocurrent, subsequent phase demodulation and finally the generation of interferometer signals, such as the longitudinal phase readout, differential wavefront sensing signal, differential power sensing and contrast. Here, fundamental Gaussian beams without astigmatism are assumed. The methods are validated in several examples by comparison with experimental data, with analytical results as well as with an intuitively predictable system.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.     

On the acoustic-radiation-induced strain and stress in elastic solids with quadratic nonlinearity (L)

This letter demonstrates that an eigenstrain is induced when a wave propagates through an elastic solid with quadratic nonlinearity. It is shown that this eigenstrain is intrinsic to the material, but the mean stress and the total mean strain are not. Instead, the mean stress and total means strain also depend on the boundary conditions, so care must be taken when using the static deformation to measure the acoustic nonlinearity parameter of a solid.     

Dielectric permittivity and AC conductivity investigations of the structural phase transitions in (NH3)2(CH2)7CdCl2Br2

The AC dielectric permittivity as a function of temperature (100–400 K) at different frequencies (between 80 Hz and 20 kHz) for the layered alkylene diammonium insulator containing Cd, namely, [(NH₃)₂(CH2)₇CdCl₂Br₂] has been measured. The formation of the compound was confirmed by microchemical analysis and IR absorption spectrometry. X-ray powder diffraction indicates an orthorhombic unit cell of dimensions: a = 10.219(2) Å, b = 9.168(2) Å and c = 38.694(4) Å. The AC conductivity ([sgrave]) is presented as a function of temperature and frequency. The conductivity and permittivity results indicate the presence of first-order phase transitions at 317 and 345 K. This has been confirmed by thermal analysis techniques. The activation energies were of values ranging between 0.15 and 0.62 eV depending upon the temperature range and the applied frequencies.     

Fluctuating in the hopping rate of CuO thin films with respect to substrate temperature

Electrical transport properties in CuO thin films processed using d.c. magnetron sputtering technique is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent conductivity of the investigated films is controlled by the multi-phonon hopping conduction mechanism. A detailed analysis in terms of carrier hopping parameters is used to correlate electrical transport properties with the d.c. magnetron sputtering conditions.     

Optical studies of the ferroelastic phase transitions in KFe(MoO4)2

ABSTRACT

The ferroelastic phase transitions in KFe(MoO₄)₂ have been studied by means of polarized light microscopy. The crystal undergoes a sequence of ferroelastic phase transitions. It has been found that the second transition consists of two transitions separated by the temperature interval of about 0.4 K. Both these transitions are of the first order and are evidenced through a phase front passing, without the domain structure rebuilding. The disposition of optical indicatrix axes n_g, n_m has been established, and the birefringence has been measured in the plane (0001) in the temperature range covering all ferroelastic phases. From temperature studies of the morphic birefringence, a critical exponent of the order parameter has been estimated.     

Additive noise-induced Turing transitions in spatial systems with application to neural fields and the Swift-Hohenberg equation

This work studies the spatio-temporal dynamics of a generic integral-differential equation subject to additive random fluctuations. It introduces a combination of the stochastic center manifold approach for stochastic differential equations and the adiabatic elimination for Fokker-Planck equations, and studies analytically the systems’ stability near Turing bifurcations. In addition two types of fluctuation are studied, namely fluctuations uncorrelated in space and time, and global fluctuations, which are constant in space but uncorrelated in time. We show that the global fluctuations shift the Turing bifurcation threshold. This shift is proportional to the fluctuation variance. Applications to a neural field equation and the Swift-Hohenberg equation reveal the shift of the bifurcation to larger control parameters, which represents a stabilization of the system. All analytical results are confirmed by numerical simulations of the occurring mode equations and the full stochastic integral-differential equation. To gain some insight into experimental manifestations, the sum of uncorrelated and global additive fluctuations is studied numerically and the analytical results on global fluctuations are confirmed qualitatively.     

Application of moiré technique to the measurement of modulation transfer functions (MTF) of printing systems

It is shown theoretically and verified experimentally that by writing a low spatial frequency Ronchi grating by a computer and printing two copies of it on two transparencies by a printer, the modulation transfer function (MTF) of the printed image can be evaluated by measuring the transmittance of the superimposed gratings in a moiré fringe spacing. Application of the technique is quite simple and the results are reasonably reproducible. The technique does not require a high sensitive intensity detector and a very narrow slit for transmission scanning. Also, the presented technique can be applied to other imaging systems.     

掺杂PVK薄膜中两种组分相互作用的光谱及形貌研究

将两种荧光材料Alq₃和DCJTB 同时掺杂到聚合物PVK中,通过混合薄膜的光学及电学性质研究了能量传递过程及电荷陷阱作用。同时用AFM分析了不同掺杂浓度下混合薄膜的相分离现象。发现随着DCJTB染料比例的增加,两种染料在PVK中的分散越来越均匀,说明在双掺杂体系中存在Alq₃和DCJTB 的某种作用,这种作用打散了混合物中Alq₃的聚集,但随着掺杂浓度的进一步增加,DCJTB形成了自己独立的电荷传输通道,从而降低了电致发光器件的启亮电压。     

Jensen-Shannon divergence in conjugate spaces: The entropy excess of atomic systems and sets with respect to their constituents

The disorder of a composite system or of a set of different systems is always higher than the mere sum of the internal disorder of its constituents. One of the most widely used functionals employed for measuring the randomness of a single distribution is the Shannon entropy, from which the increase of disorder within the composite system with respect to those of the constituents is quantified by means of the Jensen-Shannon Divergence (JSD). In this work two different applications of the JSD in the study of the information content of atomic electron densities are carried out: (i) finding the contribution for a given atom of its composing subshells to the total atomic information; (ii) and similarly for selected sets of atoms, such as periods and groups throughout the Periodic Table as well as isoelectronic series. In both cases, the analysis is performed in the two conjugate position and momentum spaces, and the results are interpreted according to physically relevant quantities such as the ionization potential.     

Room and high-temperature scanning tunnelling microscopy and spectroscopy (HT-STM/STS) investigations of surface nanomodifications created on the TiO2(1 1 0) surface

High-temperature scanning tunnelling microscopy, scanning tunnelling spectroscopy and current imaging tunnelling spectroscopy (HT-STM/STS/CITS) were used to study the topographic and electronic structures changes due to surface modifications of the TiO₂(1 1 0) surface caused by the STM tip. In situ high-temperature STM results showed that the created modifications were stable even at elevated temperatures. The STS/CITS results showed the presence of energy gap below the Fermi level on the untreated regions. The disappearance of energy gap below the Fermi level on the modifications created by the tip was observed. It is assumed that the presence of the tip can change the chemical stoichiometry of the surface from TiO_2−x towards Ti₂O₃.     

Dissociative adsorption and site specificity in the initial stages of tetraethoxysilane (TEOS) interaction with Si(111)-(7×7)

We report results of a scanning tunneling microscopy and X-ray photoelectron spectroscopy study on the interaction of tetraethoxysilane (TEOS), a precursor for chemical vapor deposition of silicon dioxide, with Si(111)-(7×7) at room temperature. Under these conditions the interaction of TEOS with the surface is predominantly dissociative. The main adsorption products are ethyl- and triethoxysiloxane groups, which probably evolve in a four-center reaction of TEOS with two neighboring surface dangling bonds. Adsorption of the dissociation products is highly site-selective: triethoxysiloxane groups adsorb on the Si adatoms while ethyl groups react with the rest-atom dangling bonds. Center adatoms are over three times more reactive towards this reaction than corner adatoms. This two-fold selectivity is explained within the concept of local electron donor/acceptor properties.