Nonlinear microwave emission in Ba0.6K0.4BiO3 crystals near Tc

We report a detailed investigation of harmonic generation at microwave frequencies in Ba_0.6K_0.4BiO₃ crystals. Second- and third-harmonic signals are investigated as a function of temperature, external magnetic field and input power level, at temperatures close to T_c. The experimental data are discussed in the framework of a phenomenological theory, based on the two-fluid model, which assumes that the microwave and the static fields, penetrating the sample within the penetration depth, perturb the partial concentrations of the normal and condensate fluids. We show that the enhanced nonlinear effects detected near T_c in Ba_0.6K_0.4BiO₃ and YBa₂Cu₃O₇ crystals may have the same origin. However, in order to account for the experimental data of Ba_0.6K_0.4BiO₃, one needs to involve a distribution of T_c over the crystal.     

Superconductivity and normal state resistivity of Ba0.6K0.4BiO3: an optical phonon approach

We discuss the nature of the pairing mechanism and the physical properties associated with the normal as well as the superconducting state of cubic perovskites Ba_0.6K_0.4BiO₃using the strong coupling theory. An interaction potential which includes the Coulomb, electron–optical phonon and electron–plasmon interactions is developed to elucidate the superconducting state. A model dielectric function is constructed with these interactions fulfilling thef-sum rule. The screening parameter (μ^* = 0.26) infers the poor screening of charge carriers. The electron–optical phonon strength (λ) estimated as 0.98 is consistent with an attractive electron–electron interaction and supports the moderate to strong coupling theory. The superconducting transition temperature of Ba_0.6K_0.4BiO₃is then estimated as 32 K. Ziman's formula of resistivity is employed to analyse and compare this with the temperature-dependent resistivity of a single crystal. The estimated contribution from the electron–optical phonon together with the residual resistivity clearly infers a difference when a comparison is made with experimental data. The subtracted data infer a quadratic temperature dependence in the temperature domain (30 ≤ T ≤ 200 K). The quadratic temperature dependence of ρ [ = ρ_exp − (ρ₀ + ρ_e–ph)] is understood in terms of 3D electron–electron inelastic scattering. The presence of these el–el and el–ph interactions allows a coherent interpretation of the physical properties. Analysis reveals that a moderate to strong coupling exists in the Ba_0.6K_0.4BiO₃system and the coupling of electrons with the high-energy optical phonons of the oxygen breathing mode will be a reason for superconductivity. The implications of the above analysis are discussed.     

Domain configuration and dielectric properties of Ba0.6Sr0.4TiO3 thin films

The microstructure and electrical properties of Ba_0.6Sr_0.4TiO₃ thin films have been investigated. Nanometer-sized domains, ranging from 8 to about 30 nm, were observed by piezoresponse force microscopy (PFM). The critical size, below which only single domains exist, is found to be about 31 nm. The film exhibits ferroelectric behavior characterized by polarization hysteresis loop and capacitance-voltage curve.     

The size effect of Ba0.6Sr0.4TiO3 thin films on the ferroelectric properties

Barium strontium titanate (BST) thin films were prepared by RF magnetron sputtering. The dielectric constant-voltage curves and the hysteresis loops of BST thin films with different grain sizes and film thicknesses were investigated. When the grain size increases from 12 nm to 35 nm, remarkable increases in dielectric constant and tunability were observed. Above 12 nm, the BST films exhibited size effects, i.e. a decrease in maximal polarization (P_m) and an increase in coercive electric field (E_c) with reduction in grain size. In our investigation, the dielectric constant, tunability and maximal polarization increased as the film thickness increased. Furthermore, the size dependence of the dielectric constant and tunability of Ba_0.6Sr_0.4TiO₃ thin films is determined by that of the maximal polarization and the coercive electric field.     

Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors

Ba_0.6Sr_0.4TiO₃ thin films were deposited on Pt/SiO₂/Si substrate by radio frequency magnetron sputtering. High-resolution transmission electron microscopy (HRTEM) observation shows that there is a transition layer at BST/Pt interface, and the layer is about 7-8 nm thickness. It is found that the transition layer was diminished to about 2-3 nm thickness by reducing the initial RF sputtering power. X-ray photoelectron spectroscopy (XPS) depth profiles show that high Ti atomic concentration results in a thick interfacial transition layer. Moreover, the symmetry ν of ?_r-V curve of BST thin film is enhanced from 52.37 to 95.98%. Meanwhile, the tunability, difference of negative and positive remanent polarization (P_r), and that of coercive field (E_C) are remarkably improved.     

Specific heat of the cubic high-Tc superconductor Ba0·6K0·4BiO3

We report magnetic susceptibility and specific heat measurements on polycrystalline samples of the 30 K superconductor Ba_0·6K_0·4BiO₃. Normal-state magnetization measurements indicate a Pauli-paramagnetic susceptibility of χ_pauli = 2.3 × 10⁻⁵ emu/mole, from which we infer a value for the density of states at the Fermi level of N(0) = 8.6 × 10 ²¹ev⁻¹cm.⁻³ Specific heat measurements performed between 1.6 K and 40 K indicate that considerable lattice softening occurs at low temperatures; the effective Debye temperature drops from 280 K at 35 K to 210 K at 4 K, implying that soft phonon modes are present in this compound. This result indicates that conventional phonon-mediated interactions may be responsible for the high transition temperature exhibited by Ba_0·6K_0·4BiO₃.     

Evolution of the 251 cm-1 infrared phonon mode with temperature in Ba0.6K0.4Fe2As2

The far-infrared optical reflectivity of an optimally doped Ba1-xKxFe2As2(x =0.4) single crystal is measured from room temperature down to 4 K. We study the temperature dependence of the in-plane infrared-active phonon at 251 cm-1 . This phonon exhibits a symmetric line shape in the optical conductivity, suggesting that the coupling between the phonon and the electronic background is weak. Upon cooling down, the frequency of this phonon continuously increases, following the conventional temperature dependence expected in the absence of a structural or magnetic transition. The intensity of this phonon is temperature independent within the measurement accuracy. These observations indicate that the structural and magnetic phase transition might be completely suppressed by chemical doping in the optimally doped Ba0.6K0.4Fe2As2 compound.     

Superconductivity of powder-in-tube Sr0.6K0.4Fe2As2 wires

Nb-sheathed Sr_0.6K_0.4Fe₂As₂ superconducting wires have been fabricated using the powder-in-tube (PIT) method for the first time and the superconducting properties of the wires have been investigated. The transition temperature (T_c) of the Sr_0.6K_0.4Fe₂As₂ wires is confirmed to be as high as 35.3 K. Most importantly, Sr_0.6K_0.4Fe₂As₂ wires exhibit a very weak J_c-field dependence behavior even the temperature is very close to T_c. The upper critical field H_c2(0) value can exceed 140 T, surpassing those of MgB₂ and all the low temperature superconductors. Such high H_c2 and superior J_c-field performance make the 122 phase SrKFeAs wire conductors a powerful competitor potentially useful in very high field applications.     

Microstructure and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films grown on super smooth glazed-Al2O3 ceramics substrate

Modified substrates with nanometer scale smooth surface were obtained via coating a layer of CaO-Al₂O₃-SiO₂ (CaAlSi) high temperature glaze with proper additives on the rough-95% Al₂O₃ ceramics substrates. (Ba_0.6Sr_0.4)TiO₃ (BST) thin films were deposited on modified Al₂O₃ substrates by radio-frequency magnetron sputtering. The microstructure, dielectric, and insulating properties of BST thin films grown on glazed-Al₂O₃ substrates were investigated by X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric properties measurement. These results showed that microstructure and dielectric properties of BST thin films grown on glazed-Al₂O₃ substrates were almost consistent with that of BST thin films grown on LaAlO₃ (1 0 0) single-crystal substrates. Thus, the expensive single-crystal substrates may be substituted by extremely cheap glazed-Al₂O₃ substrates.     

Effect of sintering temperature on structure and nonlinear dielectric properties of Ba0.6Sr0.4TiO3 ceramics prepared by the citrate method

Ba_0.6Sr_0.4TiO₃ ceramics were prepared by a citrate precursor method. The structure and nonlinear dielectric properties of the resulting ceramics were investigated within the sintering temperature range 1200-1300 °C. Adopting fine Ba_0.6Sr_0.4TiO₃ powder derived from the citrate method was confirmed to be effective in reducing the sintering temperatures required for densification. The ceramic specimens sintered at 1230-1280 °C presented relative densities of around 95%. A significant influence of sintering temperature on the microstructure and nonlinear dielectric properties was detected. The discrepancy in nonlinear dielectric behavior among the specimens sintered at different temperatures was qualitatively interpreted in terms of the dielectric response of polar micro-regions under bias electric field. The specimens sintered at 1230 and 1250 °C attained superior nonlinear dielectric properties, showing relatively low dielectric losses (tan δ) of 0.24% and 0.22% at 10 kHz together with comparatively large figure of merits (FOM) of 121 and 142 at 10 kHz and 20 kV/cm, respectively.     

Phase diagram and dielectric behavior of Ba0.6Sr0.4TiO3 thin films grown on orthorhombic substrates

Using Landau-Devonshire (LD)-type phenomenological model, we investigate the phase diagrams and dielectric behaviors of single-domain single-crystal Ba_0.6Sr_0.4TiO₃ films deposited on orthorhombic substrates. An anisotropic strain factor is introduced to quantitatively calculate the effects of anisotropic in-plane misfit strains. Investigation indicates that anisotropic strains play a crucial role on formation of stable ferroelectric phases and dielectric properties. The anisotropic strains induce tetragonal phases which only contain one in-plane spontaneous polarization component. These phases do not exist in BST films of the same composition under isotropic strains. Moreover, permittivity and tunability of films can reach to maximum when the corresponding spontaneous polarization component disappears at the boundaries of structural phase transition.     

Synthesis and optical properties of tetragonal KTa0.6Nb0.4O3 nanoparticles

Tetragonal phase KTa_0.6Nb_0.4O₃ (KTN) nanoparticles have been prepared by hydrothermal method. The obtained particles were characterized by X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectroscopy and UV-vis absorption spectrum techniques. A systematic change in crystal structure from cubic to tetragonal is observed with the increase of reaction temperature and KOH concentration. Room temperature UV-vis absorption spectrums of KTN particles show that the band gap changes from 3.24 to 3.34 eV with grain size diminished, which reveals the existence of blue-shift phenomenon of absorption bands.     

Study of some optical properties of evaporated TbCu0.6Al0.4 thin films

Evaporated TbCu_0.6Al_0.4 thin films with different thicknesses, ranging from 26 to 100 nm, were prepared on a glass substrate. The complex refractive index of thin films has been determined for the first time from the measurements of reflectance, R, and transmittance, T, at almost normal incidence in the spectral range of 400–2200 nm. Some micro-characteristics of TbCu_0.6Al_0.4 alloy including free charge concentration, n_c, the relaxation time, τ, the static conductivity, σ, and the electron velocity at the Fermi surface, V_F, have been evaluated using the simplified Drude model.     

Normal-state transport properties of Ba1−xKxBiO3 crystals

The normal-state transport properties of Ba_1−xK_xBiO₃ crystals with a wide range of potassium compositions (0≤x≤0.62) were studied. Although the host material BaBiO₃ has a monoclinic structure, the system changes from a monoclinic to an orthorhombic structure with a small doping of potassium (0≤x<0.35) and behaves similar to a doped semiconductor, without exhibiting superconductivity. In the composition range, holes are majority carriers in the transport phenomena. When x exceeds a critical value (0.35), the system goes into a cubic superconducting phase with a single metallic band. The vicinity of the critical composition transport phenomena is easy to understand assuming the existence of two conducting channels that are made up of metallic and semiconducting phases. Maximum T_c exceeding 30 K was observed at x0.4, where carrier density was at its maximum. Overdoping with potassium suppresses superconductivity. In the metallic composition of x>0.45, transport seems to correlate with the phonon mode with an energy distribution of 15–43 meV.     

ON THE SUPERCONDUCTING MECHANISM OF K3C60 AND Ba1-xKxBiO3

A superconducting mechanism for K₃C₆₀ and Ba_1-xK_xBiO₃ has been suggested. This is the combining picture of the Cooper pair and the Ogg pair. Numerical calculations within the framework of this picture have been done for K₃C₆₀ and Ba_1-xK_xBiO₃, and the overall consistency with the experimental data of superconducting properties is good.     

Field history dependence of nonlinear dielectric properties of Ba0.6Sr0.4TiO3 ceramics under bias electric field: Polarization behavior of polar nano-regions

Nonlinear dielectric properties of Ba_0.6Sr_0.4TiO₃ ceramics prepared by citrate method were investigated under bias electric field with respect to field history. X-ray diffraction analysis and temperature dependence of the dielectric constant (ε_r) confirmed a macroscopically paraelectric state for the specimen at room temperature. A slim polarization versus electric field (P-E) hysteresis loop of the specimen at room temperature indicated the existence of polar nano-regions (PNRs) superimposed on the paraelectric background. The nonlinear dielectric properties in continuous cycles of bias field sweep displayed a strong sensitivity to the field history. This phenomenon was qualitatively explained in terms of an irreversible polarization evolution of the PNRs under the bias fields. A considerable decline of the tunability with the cycle number suggests an appreciable contribution of the PNRs to the dielectric nonlinearity. The polarization and size of the PNRs were determined by fitting the dielectric constants to a multipolarization mechanism model.     

外延PbZr0.4Ti0.6O3薄膜厚度对其铁电性能的影响

从Landau-Devonshire唯象理论出发，考虑到晶格失配导致的NFDA3位错应力场与极化场的耦合，研究了在SrTiO₃衬底上外延生长的PbZr_0.4Ti_0.6O₃薄膜厚度对其自发极化强度、电滞回线的影响. 结果表明，产生刃位错的PbZr_0.4Ti_0.6O₃薄膜临界厚度为～1.27nm，当薄膜厚度大于临界厚度时，在所形成的位错附近，极化强度出现急剧变化，形成自发极化强度明显减弱的“死层”；随着薄膜厚度的减小，位错间距增大，“死层”厚度与薄膜总厚度之比增加. 由薄膜电滞回线的变化情况可知，其剩余极化强度随着薄膜厚度的减小而逐渐减小. 关键词： 铁电薄膜 自发极化强度 电滞回线 位错