Theoretical characterization of axial deformation effects on hydrogen storage of Ti decorated armchair (5,5) SWCNT

Theoretical calculations have been performed in the framework of density functional theory to characterize the effect of axial deformation on hydrogen storage of Ti decorated armchair (5,5) SWCNT. The theoretical characterization has been carried out in terms of H₂ adsorption energies that are lying in the desirable energy window (?0.2 to ?0.6?eV) recommended by DOE, as well as a variety of physicochemical properties. A remarkable and significant change in H₂ adsorption energy is observed under the effect of only (1%) axial strain. Axial relaxation leads to H₂ adsorption energies within the recommended energy range for hydrogen storage, in contrast to axial compression. Simultaneous weakening of π and σ interactions, due to the effect of axial relaxation and loss of spatial orbital overlap, is in favor of hydrogen adsorption in the recommended energy range, and dominates the effect of charge transfer from Ti 3d to C 2p of the SWCNT. The calculated pairwise and non pairwise additive components confirm that the role of the SWCNT is not restricted to supporting the metal. Polarizability and hperpolarizabilty calculations as well as spectral analysis characterize the relaxed structure (Z?=?1.02), for which H₂ adsorption energy (?0.34?eV) is in the recommended energy range for hydrogen storage, to be energetically more preferable than the compressed structure (Z?=?0.99). The results offer a way to control and characterize the hydrogenation process of metal functionalized SWCNTs by strain loading.     

Phonon dispersion of quasi-freestanding graphene on Pt(111)

High-resolution electron energy loss spectroscopy has been used to probe phonon dispersion in quasi-freestanding graphene epitaxially grown on Pt(111). Loss spectra clearly show different dispersing features related to both acoustic and optical phonons. The present results have been compared with graphene systems which strongly interact with the substrate, i.e. the nearly-flat monolayer graphene (MLG)/Ni(111) and the corrugated MLG/Ru(0001). We found that the phonon dispersion of graphene/Pt(111) reproduces well the behavior of pristine graphite. This could be taken as an indication of the negligible interaction between the graphene sheet and the underlying Pt substrate. The softening of out-of-plane modes observed for interacting graphene/metal interfaces does not occur for the nearly-free-standing graphene/Pt(111).     

Effect of strain on geometric and electronic structures of graphene on Ru(0001) surface

The atomic and electronic structures of a graphene monolayer on a Ru(0001) surface under compressive strain are investigated by using first-principles calculations. Three models of graphene monolayers with different carbon periodicities due to the lattice mismatch are proposed in the presence and the absence of the Ru(0001) substrate separately. Considering the strain induced by the lattice mismatch, we optimize the atomic structures and investigate the electronic properties of the graphene. Our calculation results show that the graphene layers turn into periodic corrugations and there exist strong chemical bonds in the interface between the graphene N×N superlattice and the substrate. The strain does not induce significant changes in electronic structure. Furthermore, the results calculated in the local density approximation (LDA) are compared with those obtained in the generalized gradient approximation (GGA), showing that the LDA results are more reasonable than the GGA results when only two substrate layers are used in calculation.     

Molecular dynamic study on contact angle of water droplet on a single-wall carbon nanotube (SWCNT) plate

Molecular dynamics (MD) simulations are carried out to study the interaction between a carbon nanotube (CNT) plate and nano-sized water droplet. The cases with or without a quadrupole term acting on the charge sites of the water molecule, are directly compared. The wettability of the CNT plate with different separation distances is studied, and the contact angle on the plates with various separation distances is measured and analyzed. The simulation indicates that the contribution from quadrupole potential is negligible for wetting between twin CNTs and liquid water, while it is significant for holding a sphere-like water droplet and forming a reasonable contact angle.     

Effect of oxidation of graphene nanoribbons on electronic and magnetic properties

The electronic properties, band gap and ionization potential as well as the energies of the singlet and triplet states of zigzag and armchair graphene nanoribbons are calculated as a function of the number of oxygen atoms on the ribbon employing density functional theory at B3LYP/6-31G* level. The calculated band gaps indicate that both structures are semiconducting. The band gap of the armchair ribbons initially decreases followed by an increase with oxygen number. For zigzag ribbons the band gap decreases with increasing oxygen number whereas the ionization potential increases with oxygen content. In both armchair and zigzag ribbons the ionization potential shows a gradual increase with the number of oxygen atoms. Some of the oxygenated ribbons calculated have triplet ground states and have the density of states at the Fermi level for spin down greater than spin up suggesting the possibility they may be ferromagnetic semiconductors.     

Effect of hydrogen dimers on the electronic structure of graphene

We investigate the effect of hydrogen dimers on the electronic structure of graphene. Using Greenʼs function and the T-matrix approach, we calculate the local density of states of graphene with single hydrogen dimer, as well as the quasiparticle spectral function of graphene with a finite concentration of randomly distributed hydrogen dimers. Our results show that the effect of dimer adsorption is dramatically different from that of monomer adsorption previously studied, and strongly depends on the configuration of the dimer. The features of the plotted spectral function of graphene are relevant to the band gap opening and the metal–insulator transition.     

Effect of the deflection strain on the atomic and electronic structure of a graphene nanoparticle

The results of numerical simulation of the deflection strain of a graphene nanoparticle 36.9 Å long and 41.18 Å wide are presented. The nanoparticle is deflected by nanoindentation. A platinum pyramid with the face-centered cubic lattice is considered as an atomic-force microscope tip. It is found that the graphene nanoparticle withstands a force of 437.83 nN, and its tensile strength is 126 GPa. It is shown that the nanoparticle deflection improves its emission properties. The particle conductivity remains almost unchanged with increasing deflection. The maximum π-electron shell overlap and the significant redistribution of the electron charge density are characteristic of atoms of the graphene nanoparticle with the largest curvature.     

Comparative study of the nature of chemical bonding of corrugated graphene on Ru(0001) and Rh(111) by electronic structure calculations

Recently, atomic resolved scanning tunneling microscopy investigations revealed that, depending on the substrate (Ni(111), Ru(0001), Ir(111), Pt(111), Rh(111)), graphene overlayer might present regular corrugation patterns, with periodically repeated units of a few nanometers. Variations of the interactions at the interface and the modulation of the local electronic properties are associated with the exact atomic arrangement of the carbon pairs with respect to the metal atoms of the substrate. Better understanding of the atomic structure and of the chemical bonding between graphene and the underlying transition metal is motivated by the fundamental scientific relevance of such systems, but it is also crucial in the perspective of possible applications. With the present work, we propose model systems for the two interfaces showing the most pronounced corrugation patterns, i.e. graphene/Ru(0001) and graphene/Rh(111). Our goal is to understand the nature of the interactions by means of electronic structure calculations based on Density Functional Theory. Our simulations qualitatively reproduce very well experimental results such as the STM topographies and the electrostatic potential maps, and quantitatively provide the closest agreement that has been published so far. The detailed analysis of the electronic structure at the interface highlights similarities and differences by changing the supporting transition metal. Our results point to a fundamental role of the hybridization between the π orbitals of graphene with the d band of the metal in determining the specific corrugation of the adsorbed monolayer. It is shown that differences in the response of the graphene electronic structure to the interaction with the metal can hinder the hybridization and lead to substantially different structures.     

石墨烯纳米片电子结构和量子输运特性第一原理研究

用基于密度泛函理论的原子紧束缚方法计算研究单层石墨烯纳米圆片和纳米带的电子结构,并结合第一原理和非平衡函数法计算量子输运特性.通过电子能态和轨道密度分布研究纳米碳原子层的电子成键状态,结合电子透射谱、电导和电子势分布分析电子散射与输运机制.石墨烯纳米带和纳米圆片分别呈现金属和半导体的能带特征,片层边缘上电极化分别沿垂直和切向方向,电子电导出现较大的差异,来源于石墨烯纳米圆片边缘的突出碳原子环对电子的强散射.石墨烯纳米带的电子透射谱表现为近似台阶式变化并在费米能级处存在弹道电导峰,而石墨烯纳米圆片的电子能带和透射谱在费米能级处开口并且因量子限制作用呈现更加离散的多条高态密度窄能带和尖锐谱峰.     

Semiconducting electronic property of graphene adsorbed on (0001) surfaces of SiO2

First-principles total energy calculations are performed to investigate the energetics and electronic structures of graphene adsorbed on both an oxygen-terminated SiO2 (0001) surface and a fully hydroxylated SiO2 (0001) surface. We find that there are several stable adsorption sites for graphene on both O-terminated and hydroxylated SiO2 surfaces. The binding energy in the most stable geometry is found to be 15 meV per C atom, indicating a weak interaction between graphene and SiO2 (0001) surfaces. We also find that the graphene adsorbed on SiO2 is a semiconductor irrespective of the adsorption arrangement due to the variation of on-site energy induced by the SiO2 substrate.     

Investigation of tip sonication effects on structural quality of graphene nanoplatelets (GNPs) for superior solvent dispersion

The exceptional properties of graphene and its structural uniqueness can improve the performance of nanocomposites if it can attain the uniform dispersion. Tip sonication assisted graphene solvent dispersion has been emerged as an efficient approach but it can cause significant degradation of graphene structure. This study aimed to evaluate the parametric influence of tip sonication on the characteristics of sp² carbon structure in graphene nanoplatelets by varying the sonication time and respective energy at three different amplitudes (60%, 80% and 100%). The study is essential to identify appropriate parameters so as to achieve high-quality and defect-free graphene with a highly desirable aspect ratio after solvent dispersion for composite reinforcement. Quantitative approach via Raman spectroscopy is used to find the defect ratio and lateral size of graphene evolved under the effect of tip sonication parameters. Results imply that the defect ratio is steady and increases continually with GNPs, along with the transformation to the nano-crystalline stage I up to 60 min sonication at all amplitudes. Exfoliation was clearly observed at all amplitudes together with sheet re-stacking due to considerable size reduction of sheets with large quantity. Finally, considerable GNPs fragmentation occurred during sonication with increased amplitude and time as confirmed by the reduction of sp² domain (La) and flake size. This also validates the formation of edge-type defect in graphene. Convincingly, lower amplitude and time (up to 60 min) produce better results for a low defect content and larger particle size as quantified by Raman analysis.     

Effect of substitutional impurities on the electronic transport properties of graphene

Density-functional theory in combination with the nonequilibrium Green's function formalism is used to study the effect of substitutional doping on the electronic transport properties of hydrogen passivated zig-zag graphene nanoribbon devices. B, N and Si atoms are used to substitute carbon atoms located at the center or at the edge of the sample. We found that Si-doping results in better electronic transport as compared to the other substitutions. The transmission spectrum also depends on the location of the substitutional dopants: for single atom doping the largest transmission is obtained for edge substitutions, whereas substitutions in the middle of the sample give larger transmission for double carbon substitutions. The obtained results are explained in terms of electron localization in the system due to the presence of impurities.     

Probing the electronic structure and optical response of a graphene quantum disk supported on monolayer graphene

In this paper, we show that a graphene quantum disk (GQD) can be generated on monolayer graphene via structural modification using the electron beam. The electronic structure and local optical responses of the GQD, supported on monolayer graphene, were probed with electron energy-loss spectrum imaging on an aberration-corrected scanning transmission electron microscope. We observe that for small GQD, ~1.3 nm in diameter, the electronic structure and optical response are governed by the dominating edge states, and are distinctly different from either monolayer graphene or double-layer graphene. Highly localized plasmon modes are generated at the GQD due to the confinement from the edge of the GQD in all directions. The highly localized optical response from GQDs could find use in designing nanoscale optoelectronic and plasmonic devices based on monolayer graphene.     

First-principles study of interface relaxation effect on interface and electronic structures of InAs/GaSb superlattices with different interface types

We have implemented first-principles relativistic pseudopotential calculations within general gradient approximation to investigate the structural and electronic properties of quaternary InAs/GaSb superlattices with an InSb or GaAs type of interface. Because of the complexity and low symmetry of the quaternary interfaces, the interface energy and strain in the InAs/GaSb superlattice system have been calculated to determine the equilibrium interface structural parameters. The band structures of InAs/GaSb superlattices with InSb and GaAs interfaces have been calculated with respect to the lattice constant and atomic position relaxations of the superlattice interfaces. The calculation of the relativistic Hartree–Fock pseudopotential in local density approximation has also been performed to verify the calculated band structure results that have been predicted in other empirical theories. The calculated band structures of InAs/GaSb superlattices with different types of interface (InSb or GaAs) have been systematically compared. We find that the virtual–crystal approximation fails to properly describe the quaternary InAs/GaSb superlattice system, and the chemical bonding and ionicity of anion atoms are essential in determining the interface and electronic structures of InAs/GaSb superlattice system.     

Effect of N doping and Stone-Wales defects on the electronic properties of graphene nanoribbons

The effects of nitrogen substitutional doping in the Stone-Wales (SW) defect on the electronic transport properties of zigzag-edged graphene nanoribbon (ZGNR) are studied by using density functional theory combined with nonequilibrium Green’s function. The transformation energies of all doped nanostructures are evaluated in terms of total energies and, furthermore, it is found that the impurity placed on the center of the ribbon is the most energetically favorable site. Nitrogen substitution gives rise to a complete electron backscattering region in doped configurations, and the location of which is dependent on the doping sites. The electronic and transport properties of doped ZGNRs are discussed. Our results suggest that modification of the electronic properties of ZGNR with topological defects by substitutional doping might not be significant for some doping sites.     

Time-resolved two-photon photoemission of unoccupied electronic states of periodically rippled graphene on Ru(0001)

The unoccupied electronic states of epitaxially grown graphene on Ru(0001) have been explored by time- and angle-resolved two-photon photoemission. We identify a Ru derived resonance and a Ru/graphene interface state at 0.91 and 2.58?eV above the Fermi level, as well as three image-potential derived states close to the vacuum level. The most strongly bound, short-lived, and least dispersing image-potential state is suggested to have some quantum-well character with a large amplitude below the graphene hills. The two other image-potential states are attributed to a series of slightly decoupled states. Their lifetimes and dispersions are indicative of electrons moving almost freely above the valley areas of the moiré superstructure of graphene.     

Zigzag型石墨纳米带电子结构和输运性质的第一性原理研究

采用第一性原理电子结构和输运性质计算研究了zigzag型单层石墨纳米带(具有armchair 边缘)的电子结构和输运性质及其边缘空位缺陷效应. 研究发现，完整边缘的zigzag型石墨纳米带是具有一定能隙的半导体带，边缘空位缺陷的存在使得纳米带能隙变小，且缺陷浓度越大，能隙越小，并发生了半导体-金属转变. 利用这些研究结果，将有助于在能带工程中实现其电子结构裁剪.     

Zigzag型石墨纳米带电子结构和输运性质的第一性原理研究

采用第一性原理电子结构和输运性质计算研究了zigzag型单层石墨纳米带(具有armchair 边缘)的电子结构和输运性质及其边缘空位缺陷效应. 研究发现,完整边缘的zigzag型石墨纳米带是具有一定能隙的半导体带,边缘空位缺陷的存在使得纳米带能隙变小,且缺陷浓度越大,能隙越小,并发生了半导体-金属转变. 利用这些研究结果,将有助于在能带工程中实现其电子结构裁剪. 关键词： 石墨纳米带 空位缺陷 电子结构 输运性质     

拉伸作用对单层石墨片电子能隙的影响

基于紧束缚方法,在考虑最近邻相互作用的情况下,研究了拉伸锯齿型边和扶手型边单层石墨的能带结构,得到了两种类型单层石墨片的π电子能带及带隙与拉力的解析关系式.通过数值计算能够发现：拉力不但使单层石墨产生带隙,而且带隙随着拉力的增大而变宽,并且锯齿型比扶手型的带隙更易变宽. 关键词： 单层石墨片 拉伸形变 电子能隙