A high power CW Ho,Tm:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 22.7 W continuous wave (CW) diode-pumped cryogenic Ho( at %), Tm(3 at %):GdVO₄ laser. The pumping sources of Ho,Tm:GdVO₄ laser are two fiber-coupled laser diodes with fiber core diameter of 0.4 mm, both of them can supply 42 W power laser operating near 802 nm. For input pump power of 64.7 W at 802.5 nm, the output power of 22.7 W in CW operation, optical-to-optical conversion efficiency of 35.1% at 2.05 μm has been attained. The M ² factor was found to be 2.0 under an output power of 16.5 W.     

A single-longitudinal-mode CW 0.25 mm Tm,Ho:GdVO<Subscript>4</Subscript> Microchip Laser

A single-longitudinal-mode of 0.25 mm Tm,Ho:GdVO₄ Microchip Laser was reported. The maximal continuous wave (CW) output power was 26.4 mW and the threshold of 118 mW. The Tm,Ho:GdVO₄ Microchip Laser output wavelength was centered at 2039.7598 nm with bandwidth of about 57.1 pm. The beam quality factor was M ² ∼ 1.52 ± 0.03 measured by knife-edge method. The Longitudinal-Mode was scanned by a FPI and the transverse mode was monitored by an infrared vidicon camera.     

High-power,high-quality ZGP OPO pumped by a Tm,Ho:GdVO<Subscript>4</Subscript> laser

We report a ZGP OPO system capable of producing >6 W at a signal wavelength of 3.80 μm and an idler wavelength of 4.45 μm. The pumping source is the Tm,Ho:GdVO₄ laser operated at 2.049 μm with an M ² of 1.07. The ZGP OPO generated a total combined output power of 6.1 W at signal wavelength and idler wavelength under pumping power of 18.3 W, and an M ² of 1.7 for OPO output was obtained.     

Comparison of RTP electro-optic Q-switch and acousto-optic Q-switch in Tm,Ho:GdVO<Subscript>4</Subscript> laser

We demonstrate a tunable, narrow linewidth, linearly polarized and gain-switched Cr²⁺:ZnSe laser pumped by a Tm, Ho:YVO₄ laser at 10 kHz pulse repetition frequency. By setting a quartz birefringent filter with a Brewster angle in the cavity, the linearly polarized Cr²⁺:ZnSe laser can be continuously tuned from 2.45 to 2.50 μm, and the output power was almost not changed. In addition, the linewidth was compressed to about 5 nm. At the incident pump power to the crystal of 14 W, the maximum output power of 2.84 W was obtained, corresponding to a slope efficiency of 20.4%.     

A comparative study on diode-pumped continuous wave Tm:Ho:YVO<Subscript>4</Subscript> and Tm:Ho:GdVO<Subscript>4</Subscript> lasers

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.     

Room temperature diode-pumped 1875.1 nm Tm:GdVO<Subscript>4</Subscript> laser

A diode end-pumped single-frequency Tm:GdVO₄ laser at room temperature was reported. The maximal output power of single-frequency is as high as 66 mW by using two uncoated fused etalons, which are respectively 0.05 mm thick YAG and 1 mm thick quartz. We obtained the single frequency Tm:GdVO₄ laser at 1875.1 nm. The slope efficiency is 1.5%. The change of the lasing wavelength on temperature was also measured. The single-longitudinal-mode (SLM) laser can be used as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

diode-pumped single-frequency Tm:GdVO<Subscript>4</Subscript> laser at 1897.6 nm

A diode end-pumped Tm:GdVO₄ laser at room temperature is reported. The maximal output power of single-frequency is as high as 34 mW by using two uncoated fused etalons, which are respectively 0.05 mm thick YAG and 1mm thick quartz. We obtained the single frequency Tm:GdVO₄ laser at 1897.6 nm with the slope efficiency of 1.3%. The single-longitudinal-mode (SLM) laser can be used as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

Effect of resonator length on ZnGeP<Subscript>2</Subscript> doubly resonant optical parametric oscillator pumped by a Tm,Ho:GdVO<Subscript>4</Subscript> laser

The effect of resonator length on ZnGeP₂ doubly resonant optical parametric oscillator was reported in this letter. With the employment of a Tm,Ho:GdVO₄ laser as the pump source at 2.05 μm, we have found that there are obvious peaks of the output power when the resonator lengths are matched to the length of the pump source. The ZGP OPO can generate a maximum output power of 4.27 W at 3.80 μm signal and 4.45 μm idler when the resonator length matches that of the pump source.     

Diode-pumped Tm:GdVO<Subscript>4</Subscript> lasers with double etalons

Diode end-pumped single-frequency Tm:GdVO₄ laser at room temperature was reported. The maximal output power of single-frequency is as high as 51 mW by using two uncoated fused YAG etalons, which are respectively 0.05 mm thick and 1 mm thick. We obtained the single frequency Tm:GdVO₄ laser at 1919.7 nm. The slope efficiency is 1.4%. The single-longitudinal-mode (SLM) laser can be used as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

Single-longitudinal-mode lasing of Tm,Ho:GdVO<Subscript>4</Subscript> using a filter of Fabry-Perot etalon and volume Bragg grating

In this letter, we report a diodepumped CW Tm, Ho:GdVO₄ laser at 77 K with a volume Bragg grating (VBG) instead of the conventional mirror. Inserting a Fabry-Perot etalon into the cavity, a singlelon-gitudinal-mode of Tm, Ho:GdVO₄ laser which I s operating at 2038.387 nm with output power 64 mW is obtained. The slope efficiency of 4.68% and a narrow linewidth about 45 pm FWHM are achieved. And appropriate cavity length is about 75 ± 5 mm.     

Diode-end-pumped Tm,Ho:YVO<Subscript>4</Subscript> microchip laser at room temperature

Room temperature Tm, Ho:YVO₄ microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M ² factor was measured to be 1.4.     

A High-Power,Long-Wavelength Infrared ZnGeP<Subscript>2</Subscript> Opo Pumped by a <Emphasis Type="Italic">Q</Emphasis>-Switched Tm,Ho:GdVO<Subscript>4</Subscript> Laser

We report a high-power, long-wavelength infrared ZnGeP₂ (ZGP) optical parametric oscillator (OPO) pumped by a Q-switched Tm,Ho:GdVO₄ laser. The wavelength tuning range of 7.8–9.9 μm is realized by rotating the external angle of the ZGP crystal. We obtain an output power over 30 mW across the whole wavelength range and achieve a 1.71 W output power at 8.08 μm by transmitting the OPO parameters, corresponding to an idler laser slope efficiency of 12.1%.     

Diode-pumped doubly Q-switched Nd:GdVO<Subscript>4</Subscript> laser

By using both an acoustooptical (AO) modulator and a Cr⁴⁺:YAG saturable absorber in the cavity, a diode-pumped doubly Q-switched Nd:GdVO₄ laser, which can generate short pulses with high peak powers and symmetric temporal profiles, has been demonstrated. A peak power of 3.05 kW with a corresponding pulse width of 16 ns has been achieved at an incident pump power of 7.7 W. A reasonable analysis about the experimental results has been given by considering the ground-state absorption and excited-state absorption of a Cr⁴⁺:YAG crystal.     

A comparative study on diode-pumped single-frequency Tm:YAG and Tm:GdVO<Subscript>4</Subscript> lasers

In this paper, we present experimental results concerning on the laser characteristics of Tm:YAG laser and Tm: GdVO₄ laser. At room temperature, the maximum output power of Tm:YAG laser and Tm:GdVO₄ laser is 210 and 145 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:GdVO₄ laser, Tm:YAG laser can operate on single frequency with high power easily. As much as 60 mW of 2013.9 nm single-longitudinal-mode (SLM) laser was achieved for Tm:YAG laser. For Tm:GdVO₄ laser 51 mW of 1919.7 nm SLM laser was achieved. The SLM Tm:YAG laser is better for using as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

A high beam quality laser-diode end-pumped Nd:GdVO<Subscript>4</Subscript> slab laser

An 83 W, near-diffraction-limited LD end-pumped Nd:GdVO₄ slab laser with hybrid resonator was presented with the pumping power of 238 W, the slope efficiency and optical-to-optical conversion efficiency were 39.4 and 34.9%, respectively. At the output power of 70 W, beam quality M² factors were 1.2 in stable direction and 1.3 in unstable direction.     

Comparison of electro-optical and acousto-optical Q-switched,high repetition rate Nd:GdVO<Subscript>4</Subscript> laser

The differences between the performances of electro-optical (EO) and acousto-optical (AO) Q-switched, diode pumped Nd:GdVO₄ laser at high repetition rates were detailed in this paper. The results revealed that EO Q-switch was more favorable to obtain short pulse width and high peak power laser than AO Q-switch under high repetition rate operation. The minimum pulse widths at 100 kHz were 20.2 ns under EO operation and 28.7 ns under AO operation, corresponding to peak powers of 3.1 kW and 2.2 kW, respectively. The corresponding values at 10 kHz were 5.3 ns, 9.0 ns and 77.4 kW, 45.6 kW, respectively.     

Research of Tm (5.5 at %), Ho (0.55 at %):GdVO<Subscript>4</Subscript> laser pumped by diode laser at 800 nm

In this paper, we report a Tm (5.5 at %), Ho (0.55 at %):GdVO₄ laser pumped by diode laser at 800 nm. To our best knowledge, it is the first time that the use of Tm (5.5 at %), Ho (0.55 at %):GdVO₄ crystal among the similar experiments. We observed the influences of LD working temperature i.e. pump wavelength to 2 μm laser conversion efficiency. In the conditions of the continuous wave and 10 kHz acousto-optic Q-switch, high efficiency output of 2.05 μm laser was obtained. With the maximum pump power of 34.6, 13.9, and 13.6 W at 2.05 μm laser output was achieved respectively. Single laser pulse width was 25.6 ns in 10 kHz acousto-optic Q-switched condition.     

Performance improvement of high repetition rate electro-optical cavity-dumped Nd:GdVO<Subscript>4</Subscript> laser

We improved the electro-optical cavity-dumped Nd:GdVO₄ laser performance at high repetition rates by employing continuous-grown GdVO₄/Nd:GdVO₄ composite crystal under 879 nm diode-laser pumping. A constant 3.8 ns duration pulsed laser was obtained and the repetition rate could reach up to 100 kHz with a maximum average output power of 13.1 W and a slope efficiency of 56.4%, corresponding to a peak power of 34.4 kW.     

A high efficiency Ho:YAlO<Subscript>3</Subscript> laser pumped by Tm:YLF laser with a Volume Bragg Grating

We report a CW Ho:YAlO₃ (Ho:YAP) laser at room temperature pumped by a Tm:YLF laser with a Volume Bragg Grating (VBG) instead of the conventional mirror. The Ho:YAP laser operated at 2117.9 nm with output power 9.12 W. The optical-to-optical conversion efficiency is 60.4% and slope efficiency is 71.2%. The Ho:YAP output wavelength is centered at 2117.9 nm with bandwidth of about 1 nm. The beam quality factor is M ² ∼ 1.29 measured by the traveling knife-edge method.     

2041.3 nm/2054.6 nm simultaneous dual-wavelength single-longitudinal-mode Tm,Ho:YVO<Subscript>4</Subscript> microchip laser

We report a single-longitudinal-mode CW diode-pumped Tm, Ho: YVO₄ microchip laser emitting at both 2041.3 and 2054.6 nm. At each wavelength, the laser has a single longitudinal mode. The total single-longitudinal-mode output power reaches 185 mW with 20.4% optical conversion efficiency at 905 mW incident pump power.