Nickel on lead,magnetically dead or alive?

Two atomic layers of Ni condensed onto Pb films behave, according to anomalous Hall effect measurements, as magnetic dead layers. However, it has been observed that sub-monolayers of Ni lower the superconducting transition temperature of the Pb film. This has lead to the conclusion that the Ni atoms are still very weakly magnetic and that their magnetic scattering causes the reduction of the transition temperature. In the present paper the electron dephasing due to the Ni has been measured by weak localization. The dephasing is smaller by a factor 100 than the T_c-reduction would suggest. This proves that the T_c-reduction in the PbNi films is not due magnetic Ni moments.     

Angular dependence of the in-plane magnetization of (100) Cu/Ni/Cu structures

(100) Cu/Ni/Cu sandwich structures have been deposited on (100) Si using the (100) Cu epitaxially grown as the seed layer. The in-plane epitaxial relation between the metal films and Si allows the study of angular dependence of the magnetization for the field parallel to the film plane. Keeping the Cu layers at 1000 Å each and varying the Ni layers between 50 and 1000 Å, the magnetization along the [110] edge is larger than that along the [100] one. This is observed for both structures with a Ni thickness of 1000 and 500 Å, respectively. For the thinner Ni layers, the angular dependence is interfered by the reversal in magnetic anisotropy reported earlier. For such structures, a squared hysteresis loop is observed for the field perpendicular to the film plane, whereas one with little loop is observed for the in-plane magnetization. The angular dependence observed for the 1000 and 500 Å Ni films is the same as that of single crystal Ni. The (100) Cu/Ni/Cu films thus grown can be used for other magnetic measurements in the exploration of two-dimensional magnetism with controlled orientations.     

Finite-temperature magnetism of thin Ni films in sandwiches of Cu

The finite-temperature magnetism of thin Ni films sandwiched in Cu(001) layers, is discussed with the use of the itinerant-electron theory including the effect of spin fluctuations by means of the functional-integral method within the static and single-site approximations. The spatial- and temperature-dependent magnetization and the Curie temperature are computed by varying the Ni-film thickness from one to ten layers. The calculated results are discussed with reference to the recent experiments on Cu/Ni/Cu and Au/Ni/Au sandwiches and on compositionally modulated Ni-Cu superlattices.     

Tetragonal structure of thin nickel films on Cu(001)

The crystallographic structure of thin Ni films deposited on Cu(001) has been studied using Surface Extended X-ray Absorption Fine Structure (SEXAFS). Taking advantage of the linear polarization of the synchrotron radiation, we have shown that Ni adopts the Cu lattice parameter parallel to the interface. This lateral expansion induces a longitudinal compression of the unit cell, leading to a face centered tetragonal structure of the Ni films from 3 to 10 monolayers. The temperature dependence of the EXAFS oscillations has allowed to measure strain inside the Ni layers. Received 22 December 1998     

Study of the Fe−Ni interface by conversion electron Mössbauer spectroscopy

Nickel-gamma iron interfaces obtained by growing films of Fe on Ni substrates are studied using CEMS. We have found that a) intermixing is confined to two atomic layers, b) Fe atoms deposited on structural defects of the Ni (111) surfaces are magnetically polarized, c) Fe epitaxially grown on Ni is highly susceptible at room temperature. Moreover the Ni−Fe interface shows Neel-type magnetic anisotropy.     

金属诱导生长与超高真空化学气相沉积方法相结合制备多晶锗硅薄膜

采用金属Ni诱导与超高真空化学气相沉积(UHVCVD)相结合的方法，在热氧化硅衬底上生长了多晶锗硅薄膜.利用X射线衍射(XRD)、场发射扫描电镜(SEM)等对多晶锗硅薄膜的质量、表面形貌进行了测试分析，并就生长参数以及金属Ni对薄膜性能的影响进行了研究.结果表明：1)在420—500℃范围内，金属Ni具有明显的诱导作用；2)Ni层厚度对薄膜质量及形貌的影响使得晶粒尺寸随Ni厚度增加存在一极大值.在Ni层厚度为60nm时，能够获得晶粒尺寸均匀，晶粒大小为500—600nm，结晶质量良好的多晶锗硅薄膜. 关键词： 超高真空化学气相沉积 金属诱导 镍 多晶锗硅     

Photon activation of synthesis of NiO films

Phase composition, structure, and orientation of the layers formed during the pulse photon treatment of Ni films with incoherent light in air have been investigated by transmission electron microscopy (TEM). The effect of the photon treatment appearing as a decrease in the threshold temperature of the beginning of solid-phase reaction with the formation of NiO films has been found. The dependence of the NiO film growth on the irradiation dose and on the structure of the initial Ni films is shown. The conditions for the formation of single-phase epitaxial NiO films have been determined.     

Fabrication and performance characterization of Al/Ni multilayer energetic films

Al/Ni multilayer bridge films, which were composed of alternate Al and Ni layers with bilayer thicknesses of 50, 100 and 200 nm, were prepared by RF magnetron sputtering. In each bilayer, the thickness ratio of Al to Ni was maintained at 3:2 to obtain an overall 1:1 atomic composition. The total thickness of Al/Ni multilayer films was 2 μm. XRD measurements show that the compound of AlNi is the final product of the exothermic reactions. DSC curves show that the values of heat release in Al/Ni multilayer films with bilayer thicknesses of 50, 100 and 200 nm are 389.43, 396.69 and 409.92 J?g^?1, respectively. The temperatures of Al/Ni multilayer films were obviously higher than those of Al bridge film and Ni bridge film. Al/Ni multilayer films with modulation of 50 nm had the highest electrical explosion temperature of 7000 K. The exothermic reaction in Al/Ni multilayer films leads to a more intense electric explosion. Al/Ni multilayer bridge films with modulation period of 50 nm explode more rapidly and intensely than other bridge films because decreasing the bilayer thickness results in an increased reaction velocity.     

高反射率p-GaN欧姆接触电极

根据光学薄膜原理计算了GaN/Ti/Ag、GaN/Al和GaN/Ni/Au/Ti/Ag、GaN/Ni/Au/Al多层电极结构的反射率,得出Ag基和Al基反射电极均能在全角范围内提供较高的反射率。实验测量结果表明,反射率能高于80%的Ag基反射电极,具有低欧姆接触的电学特性。并将GaN/Ni/Au/Ti/Ag多层反射电极应用在上下电极结构的GaN基LED中。实验上采用两步合金法获得了低接触电阻、高反射率的电极结构,并引入Ni/Au覆盖层克服了Ag高温时的团聚和氧化现象。解决了Ag电极的稳定性问题,显著地提高了LED的出光效率,成功制备了具有上下电极结构的GaN基LED管芯。     

Doping effects of transition metals on the superconductivity of (Li,Fe)OHFeSe films

The doping effects of transition metals(TMs = Mn, Co, Ni, and Cu) on the superconducting critical parameters are investigated in the films of iron selenide(Li,Fe)OHFe Se. The samples are grown via a matrix-assisted hydrothermal epitaxy method. Among the TMs, the elements of Mn and Co adjacent to Fe are observed to be incorporated into the crystal lattice more easily. It is suggested that the doped TMs mainly occupy the iron sites of the intercalated(Li,Fe)OH layers rather than those of the superconducting Fe Se layers. We find that the critical current density J_c can be enhanced much more strongly by the Mn dopant than the other TMs, while the critical temperature T_c is weakly affected by the TM doping.     

The influence of pH electrolyte on the electrochemical deposition and properties of nickel thin films

Ni thin films were electrodeposited on gold substrate from chloride solution with different pH at room temperature. The effect of electrolyte pH on Ni coatings was studied by using the cyclic voltammetry, the scanning electron microscopy (SEM), x-ray diffraction, and alternating gradient force magnetometer measurements. From electrochemical measurements, the onset potential for reduction of Ni was gradually shifted towards more cathodic scan with increase in pH; this is due to the protons in the case of low pH values and to the hydroxide ions in the case of higher pH values. The SEM study showed that a granular and compact structure of the electrodeposited Ni layers and the variation of film morphology with bath pH are established. The x-ray diffraction spectra revealed the formation of fcc structure Ni thin films with a preferential orientation along the Ni(111). The size of the deposited crystals in both the cases has been found to be in the range of 49–153 nm. Magnetic properties such as coercivity and saturation magnetization showed strong dependence on the electrolyte solution pH and consequently the crystallite size. Coercivity higher than 130–160 Oe was achieved for a pH value of 4 to 5. The differences observed in the magnetic properties were attributed to the structural changes caused by the electrolyte pH.     

Growth and alloy formation of ultrathin Ni films on Co/Pt(1 1 1)

Low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) were used to study the growth and the structural evolution of Ni/Co/Pt(1 1 1) following high-temperature annealing. From the oscillation of the specular beam of the LEED and Auger uptake curve, we concluded that the growth mode of thin Ni films on 1 ML Co/Pt(1 1 1) is at least 2 ML layer-by-layer growth before three-dimensional island growth begins. The alloy formation of Ni/1 ML Co/Pt(1 1 1) was analyzed by AES. The temperature for the intermixing of Ni and Co layers in the upper interface without diffusing into the bulk of Pt is independent of the thickness of Ni when a Co buffer is one atomic monolayer. After the temperature was increased, formations of Ni-Co-Pt alloy, Ni-Pt alloy and Co-Pt alloy were observed. The temperature required for the Ni-Co intermixing layer to diffuse into Pt bulk increases with the thickness of Ni. The interlayer distance as a function of annealing temperature for 1 ML Ni/1 ML Co/Pt(1 1 1) was calculated from the I-V LEED. The evolution of LEED patterns was also observed at different annealing temperatures.     

Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes

In order to decrease the Schottky barrier height and sheet resistance between graphene(Gr) and the p-GaN layers in GaN-based light-emitting diodes(LEDs), some transparent thin films with good conductivity and large work function are essential to insert into Gr and p-GaN layers. In this work, the ultra-thin films of four metals(silver(Ag), golden(Au), nickel(Ni), platinum(Pt)) are explored to introduce as a bridge layer into Gr and p-GaN, respectively. The effect of a different combination of Gr/metal transparent conductive layers(TCLs) on the electrical, optical, and thermal characteristics of LED was investigated by the finite element methods. It is found that both the TCLs transmittance and the surface temperature of the LED chip reduces with the increase of the metal thickness, and the transmittance decreases to about 80% with the metal thickness increasing to 2 nm. The surface temperature distribution, operation voltage, and optical output power of the LED chips with different metal/Gr combination were calculated and analyzed. Based on the electrical, optical, and thermal performance of LEDs, it is found that 1.5-nm Ag or Ni or Pt, but 1-nm Au combined with 3 layered(L) Gr is the optimal Gr/metal hybrid transparent and current spreading electrode for ultra-violet(UV) or near-UV LEDs.     

Ni-Ge nanostructures: Role of the interface and the magnetic properties

The surface morphology and local structure of layers in the Ni-Ge and Ge-Ni-Ge-Ni-Ge films have been investigated. It has been shown that the surface of the films follows the roughnesses of the substrate surface, which have characteristic dimensions of 2–4 nm in height and ～100 nm in plane. It has been found that an interface with the depth ranging from 9 to 18 nm is formed at the boundaries between the Ni and Ge layers. The data obtained have been used to explain the specific features of the magnetic properties of the studied films, such as the asymmetry of hysteresis loops at low temperatures and the difference between the temperature dependences of the magnetization of the samples for two cooling modes: in a magnetic field and without a magnetic field.     

Ni,Fe离子掺杂对Ge-Sb-Se薄膜的结构与性能影响研究

采用低温烧结靶材，以电子束蒸发方法制备了掺Fe和掺Ni的Ge-Sb-Se薄膜，所制备的薄膜均为p型半导体.用AFM，UV-VIS，Hall和阻抗分析仪研究了薄膜的形貌、结构和性能.研究表明薄膜形成时的成膜离子活性大、掺杂元素与系统本征元素电负性间差值小以及一定的热处理后，薄膜的网络结构相对较完整，网络畸变较小，缺陷也较少.掺杂Fe，Ni既可参与Ge-Sb-Se薄膜成键，影响网络结构的完整性；也会在费米能级附近引入缺陷态密度，增加了对载流子跃迁的陷阱作用.与Fe掺杂相比，Ni掺杂使薄膜具有较完整的网络结构，较低的中性悬挂键浓度和在交变电场下可具有较少的极化子产生，相应粗糙度较小、光学带隙较宽、载流子迁移率较高、载流子浓度较低和薄膜介电损耗较小. 关键词： Fe Ni掺杂 低温烧结靶材 Ge-Sb-Se薄膜     

Chemisorption and surface ferromagnetism: Theoretical analysis of spin-resolved photoemission data from Ni(1 1 0)(2×1)−O

To extract information from recent experimental spin-resolved photoemission data from Ni(1 1 0)(2×1)?O, one-step theory calculations were performed for several geometrical and magnetic model structures. The observed strong influence of oxygen chemisorption on the normal photoemission spectra at room temperature is quantitatively reproduced assuming a (2×1) saw-tooth reconstruction with the third and fourth Ni layers magnetically dead, while the magnetization of the topmost two Ni layers is almost irrelevant for the spectra. It is concluded that bulk-like deeper layers are strongly quenched at least with regard to the near-X₂ exchange splitting.     

The interaction of ultrathin films of Ni and Pd with W(110): an XPS study

The interaction of ultrathin films of Ni and Pd with W(110) has been examined using X-ray photoelectron spectroscopy (XPS) and the effects of annealing temperature and adsorbate coverage (film thickness) are investigated. The XPS data show that the atoms in a monolayer of Pd or Ni supported on W(110) are electronically perturbed with respect to the surface atoms of Pd(100) and Ni(100). The magnitude of the electronic perturbations is larger for Pd than for Ni adatoms. Our results indicate that the difference in Pd(3d_5/2) XPS binding energies between a pseudomorphic monolayer of Pd on W(110) and the surface atoms of Pd(100) correlates with the variations observed for the desorption temperature of CO (i.e., the strength of the Pd---CO bond) on these surfaces. A similar correlation is seen for the Ni(2p_3/2) XPS binding energies of Ni/W(110) and Ni(100) and the CO desorption temperatures from the surfaces. The shifts in XPS binding energies and CO desorption temperatures can be explained in terms of: (1) variations that occur in the Ni---Ni and Pd---Pd interactions when Ni and Pd adopt the lattice parameters of W(110) in a pseudomorphic adlayer; and (2) transfer of electron density from the metal overlayer to the W(110) substrate upon adsorption. Measurements of the Pd(3d_5/2) XP binding energy of Pd/W(110) as a function of film thickness indicate that the Pd---W interaction affects the electronic properties of several layers of Pd atoms.     

Room‐Temperature Insulating Ferromagnetic (Ni,Co)1+2xTi1−xO3 Thin Films

Insulating uniaxial room‐temperature ferromagnets are a prerequisite for commonplace spin wave‐based devices, the obstacle in contemporary ferromagnets being the coupling of ferromagnetism with large conductivity. It is shown that the uniaxial A_{1 + 2x}Ti⁴⁺_{1 ? x}O₃ (ATO), A = Ni²⁺,Co²⁺, and 0.6 < x ≤ 1, thin films are electrically insulating ferromagnets already at room temperature. The octahedra network of the ATO and the corundum and ilmenite structures are the same yet different octahedra‐filling proved to be a route to switch from the antiferromagnetic to ferromagnetic regime. Octahedra can continuously be filled up to x = 1, or vacated (?0.24 < x < 0) in the ATO structure. TiO‐layers, which separate the ferromagnetic (Ni,Co)O‐layers and intermediate the antiferromagnetic coupling between the ferromagnetic layers in the NiTiO₃ and CoTiO₃ ilmenites, can continuously be replaced by (Ni,Co)O‐layers to convert the ATO‐films to ferromagnetic insulator with abundant direct cation interactions.     

牺牲Ni退火对硅衬底GaN基发光二极管p型接触影响的研究

本文通过在硅衬底发光二极管(LED)薄膜p-GaN表面蒸发不同厚度的Ni覆盖层,将其在N₂ ∶O₂=4 ∶1的气氛中、400℃—750℃的温度范围内进行退火,在去掉薄膜表面Ni覆盖层之后制备Pt/p-GaN欧姆接触层.实验结果表明:退火温度和Ni覆盖层厚度均对硅衬底GaN基LED薄膜p型欧姆接触有重要影响,Ni覆盖退火能够显著降低p型层中Mg受主的激活温度.经牺牲Ni退火后,p型比接触电阻率随退火温度的升高呈先变小后变大的规律,随Ni覆盖层厚度的增加呈先变小后变 关键词： 氮化镓 发光二极管 牺牲Ni退火 p型接触