Thermodynamics of Vacancies and Impurities at Grain Boundaries

The thermodynamics of vacancy and impurity adsorption at interfaces and grain boundaries (GBs) in solids is considered. Theoretical expressions are derived for the GB/interface free energy change caused by various levels of vacancy or impurity adsorption. This information is used to predict the behavior of vacancies at interfaces and GBs in a stress gradient and to forecast the effect of impurities on GB fracture strength. The latter predictions provide an interpretation of intergranular fracture behavior in terms of impurity adsorption and GB structural parameters such as GB width and value.     

The Migration of High Angle Grain Boundaries during Recrystallization

When plastically deformed metallic materials are annealed, new strain free grains emerge from the microstructure and grow by means of grain boundary migration until the deformation microstructure is eliminated. This process is called recrystallization. In this paper the various methods by which grain boundary migration rates are measured stereologically in order to characterize the growth process are described and compared using illustrations from recrystallization experiments on commercial AA1050 aluminum. It seems abundantly clear that during recrystallization of cold-deformed materials, isothermal grain boundary migration rates decrease with time and reasons for such a decrease are discussed. A new methodology whereby migration rates of the individual recrystallization texture components may be quantified by combining stereology and orientation imaging by the electron back scattered pattern analysis is outlined. By illustration, recent experiments on aluminum and copper are summarized documenting the slight growth rate advantage the cube texture component (001)[100] possesses during recrystallization of cold rolled material. The role of orientation pinning effects on grain boundary migration is described briefly. It appears that such pinning effects allow recrystallized grains emerging from the weaker deformation texture components to enjoy an average growth rate advantage over those emerging from the stronger deformation texture components.     

Structure of Artificial Grain Boundaries in Sapphire Bicrystals with Intermediate Layers

The structure of the artificial grain boundaries in Al₂O₃ bicrystals withY₃Al₅O₁₂ and Y-stabilizedZrO₂ (Y-ZrO₂) intermediate layers was studiedwith high resolution electron microscopy, electron diffraction and energydispersive X-ray analysis. TheY₃Al₅O₁₂ intermediate layer wasfound to be polycrystalline with three different orientation relationshipsbetween the ₂O₃ and theY₃Al₅O₁₂. The structure of theY₃Al₅O₁₂/₂O₃ interfaces is described.Also₂O₃ bicrystals with an Y-ZrO₂/₂O₃/Y-ZrO₂/₂O₃/Y-ZrO₂intermediate layer, prepared at two different temperatures, werestudied.Recry stallization of the intermediate layers occurred during thesolid phase intergrowth of the ₂O₃ bicrystalsparts and only an Y-ZrO₂ layer was found as intermediatelayer. The misorientation between the consecutive Y-ZrO₂grains was less than 1.5°. Misfit dislocations and atomic height stepsdecorate the Y-ZrO₂/₂O₃interface.     

Faceting and Roughening of the Asymmetric Twin Grain Boundaries in Zinc

Faceting of grain boundaries (GBs) or surfaces can be considered as a phase transition when the original surface or GB dissociates onto flat segments whose energy is less than that of original surface or GB. Zn [1120] flat single crystals were grown using the modified Bridgman technique from Zn of 99.999 wt% purity. Individual elongated twin plates having very uniform thickness were produced with the aid of slight deformation of single crystals. Parallel elongated sides of the twin plate are formed by the coherent symmetric twin (1102)₁(1102)₂ grain boundary (STGB) facets. Due to its optical anisotropy, zinc allows one to study the shape of the GB with the aid of polarised light. The stationary shape of the slowly migrating tip of the twin plate has been studied in situ. The hot stage of optical microscope was used. The temperature interval from 592 to 692 K was investigated. Below 632 K the twin tip contains only one plane facet 1 which is nearly parallel to the (1102)₂ plane and has the angle of 84° with the coherent STGB. Above 632 K the second facet 2 appears at the tip of the twin plate. This facet is nearly parallel to the (1100)₁ plane and has the angle of 46° with the coherent STGB. Between 632 and 682 K both 84° and 46° facets coexist, and 84° facet gradually disappear with increasing temperature. Above 682 K only 46° facet is present in the twin tip. The indications of the GB roughening phase transition were also observed, namely the edges of the facets become smoother with increasing temperature. The GB phase diagram for the twin GBs in zinc containing the lines of two GB faceting phase transitions has been constructed. Schematic Wulff-Herring diagrams explaining these transitions are presented.     

Static and Dynamic Electron Holography of Electrically Active Grain Boundaries in SrTiO3

The dynamics of electrostatic potential barriers at grain boundaries (GBs) in Nb-doped SrTiO₃ bicrystals is investigated using a unique combination of bulk and in-situ TEM electrical measurements across isolated GBs, coupled with electron holography under in-situ applied bias. The Nb bulk-doped bicrystals exhibit a positive GB potential that suppresses reversibly under applied bias greater than the nonlinearity threshold in the current-voltage curve. This suppression is interpreted as break-down of the potential barrier to current transport.The results on Nb bulk-doped bicrystals have been compared to those in which Mn has been added as a grain boundary specific dopant. This acceptor doping of the grain boundary causes an appreciable increase in the grain boundary resistance and extension of the nonlinear regime. A preliminary account of static electron holography shows a relatively flat potential profile across the GB, indicating probable compensation of donor states at the GB core with Mn-acceptors. Interestingly, the phase profile under applied bias in this case exhibits a reversible dip at the GB which is interpreted as an activation of GB trap states due to Mn-acceptor dopants trapping extra electrons (the majority charge carriers) at the GB core, inducing a negative GB potential, and diminishing current transport until the threshold bias is exceeded.The synergistic combination of nanoscale TEM measurements coupled with traditional macroscopic electrical measurements is emphasized.     

Geometric and Crystallographic Characterization of WC Surfaces and Grain Boundaries in WC-Co Composites

Electron backscattered diffraction has been used to determine the orientation of WC crystals in a WC-Co composite and atomic force microscopy has been used to measure the shapes of planar sections of the same crystals. A stereological analysis has been used to determine that {101¯0} prism facets and the {0001} basal planes are the WC surfaces that are most frequently in contact with Co. Further, the WC habit is an approximately equiaxed trigonal prism bound by three prism facets and two basal facets. An analysis of 15,600 grain boundaries shows that certain interfaces occur with a frequency that is much higher than would be expected in a random distribution and that the grain boundary habit planes also have {101¯0} and {0001} orientations. Eleven percent of all the observed WC-WC interfaces are 90° twist boundaries about [101¯0]. Two types of boundaries with a 30° rotation about [0001], a twist and an asymmetric tilt, comprise 3% of the population.     

Strain Induced Grain Boundary Premelting along Twin Boundaries in Copper Polycrystals

A polycrystalline copper sample was compressed at room temperature, then the temperature was raised to 873 K in a vacuum and annealed without unloading. Grain boundary cracks were found at 3 coherent twin boundaries. The formation of these cracks can be interpreted based on the idea of strain induced grain boundary premelting (SIGBPM). It is emphasized that 3 twin boundaries can be one of the most dangerous boundaries for crack formation when certain experimental conditions are satisfied.     

Modification of Electrical Activity of Grain Boundaries in EFG Silicon Under Influence of Hydrogen Plasma

We investigated an influence of hydrogen plasma treatment on electrical properties of shaped silicon polycrystals. Hydrogen penetration into polycrystalline silicon is demonstrated to depend on the state of the crystal (as-grown or annealed) and type of grain boundary (general or weakly deviated from special orientations). It is found that interaction of atomic hydrogen with grain boundaries can result not only in decrease of their electrical activity, but also in increase of potential barrier height at relatively high (more than 2 × 10¹⁸ cm^–2) doses of incorporated hydrogen. This phenomenon is explained by a phenomenological model which takes into account passivation of grain boundary dangling bonds and boron atoms in the bulk as two main mechanisms controlling hydrogenation effect.     

Grain Boundaries in Magnetic Nanostructured Systems

The nanostructured systems are characterized by a density of grain boundaries which is higher than that of microcrystalline systems, giving rise to unusual properties. Both the structural nature and the thickness of grain boundaries which are dependent on the synthesis conditions, strongly influence the total magnetic properties. We report several examples based on metallic and insulating nanostructured systems to illustrate how the presence of grain boundaries can be experimentally evidenced, as well as their structure and magnetic behavior, and finally the significant role of grain boundaries on the magnetic properties.     

Influence of the Grain Boundaries on the Heat Transfer in Laser Ceramics

Grain boundaries play a key role in determining several key properties of polycrystalline laser ceramics. Heat transfer measurements at low temperature constitute a good tool to probe grain boundaries. We review the results of heat transfer measurements in polycrystalline Y₃Al₅O₁₂ garnets as well as Y₂O₃ and Lu₂O₃ sesquioxide materials obtained by self-energy-driven sintering of nano-particles. The average phonon mean free path in Y₃Al₅O₁₂ was found to be significantly larger than the average grain size and to scale with temperature as T ⁻² at low temperature. Existing models describing the interaction between phonons and grain boundaries are reviewed. Correct temperature dependence of the mean free path and order of magnitude of scattering rates were found by assuming the existence of a grain boundary layer having acoustic properties different from those of the bulk. A different temperature dependence of phonon mean free path was found for the sesquioxides and was ascribed to the stronger elastic anisotropy of these materials. The thermal resistance associated to the grain boundaries of laser ceramics was found to be lower than in other dense polycrystalline ceramic materials reported in the literature.     

Magnetic Properties of Grain Boundaries of Nanocrystalline Ni and of Ni Precipitates in Nanocrystalline NiCu Alloys

Perturbed γγ-angular correlation spectroscopy (PAC) was used to investigate nanocrystalline Ni and NiCu alloys, which are prepared by pulsed electrodeposition (PED). Using diffusion for doping nanocrystalline Ni with ¹¹¹In four different ordered grain boundary structures are observed, which are characterized by unique electric field gradients. The incorporation of ¹¹¹In on substitutional bulk sites of Ni is caused by moving grain boundaries below 1000 K and by volume diffusion above 1000 K. The nanocrystalline NiCu alloys prepared by PED are microscopically inhomogeneous as observed by PAC. In contrast, this inhomogeneity cannot be detected by X-ray diffraction. The influence of the temperature of the electrolyte, the current density during deposition, and the optional addition of saccharin to the electrolyte on the homogeneity of nanocrystalline NiCu alloys was investigated. This revised version was published online in September 2006 with corrections to the Cover Date.     

Diffusion Along Migrating Grain Boundaries

The paper summarizes recent experiments on diffusion at migrating grain boundaries (GBs) occurring during discontinuous reactions, like discontinuous precipitation (DP) and diffusion induced grain boundary migration. Analytical electron microscopy was used for measurements of the solute concentration across individual solute-depleted lamellae. These data combined with information on the growth velocity and the thickness of an individual lamella allowed the determination of the local values of the diffusivities of the moving reaction front of the DP cell in Al–Zn, Ni–Sn, Cu–In and Co–Al alloys. The obtained diffusivities and activation energies are very similar to the relevant parameters of stationary GBs. This allows us to conclude that there is no significant difference in the rates of diffusion along migrating and stationary GBs in the systems investigated. It is therefore believed that the diffusivity values of the moving reaction front of the DP reaction can be a source of reliable information on interfacial diffusion characteristics, especially in systems and/or at temperatures where radiotracer data are not readily available.     

Grain Boundary Channel Formation During Interdiffusion in Alloys

We present results of an experimental study of a new phenomenon accompanying grain boundary (GB) interdiffusion: the hole channel formation along GBs. The objects for study were plates of a homogeneous Cu-5 at.% Sn alloy, which were annealed at 800°C in purified hydrogen. Porous zones were found with GB hole channels perpendicular to the surface and practically equidistant from one another. The porous zone propagation and the average pore size growth at early stages of annealing obey a parabolic law. The observed processes are caused by nucleation and growth of the Cu₃Sn phase at the free surface. The new phase works as diffusion pump pumping out Sn atoms from the alloy towards the growing compound layer. The GB channel formation has been described as a relaxation process accompanying GB interdiffusion of Sn and Cu atoms with unequal partial diffusion coefficients (D _Sn>D _Cu). Excessive vacancies appearing at the GBs due to the inequality between D _Sn and D _Cu are absorbed by bulk and GB sinks, and tensile stresses appear near the GBs stimulating hole channels or groove formation.     

Monte Carlo Simulation of the Concentration Dependence of Segregation at Vicinal Grain Boundaries

Using the Metropolis algorithm Monte Carlo technique solute-atom segregation is studied at two vicinal grain boundaries (GBs)—the = 5/(002)/ = 36.89° symmetrical twist and the = 5/(310)/ = 53.13° symmetrical tilt—at 850 K on the Ni-rich side of the Ni-Pt phase diagram, over the concentration range 0–10 at.% Pt. Unlike the Pt-rich side of the phase diagram the structures of both GBs remain stable in this concentration range. The dilute limit behavior for most GB sites extends to at least 0.1 at. %. At higher concentrations the effective segregation energies steadily decrease with increasing solute concentrations, due to solute-solute interactions between segregated atoms, until saturation occurs. It is argued that simple statistical mechanical models, e.g., the Fowler-Guggenheim model do not work well, even in the case of simple vicinal GBs.     

Reduced Mobility of Triple Nodes and Lines on Grain Growth in Two and Three Dimensions

Vertex dynamics models in two and three dimensions are applied to study grain growth including a limited mobility of triple points (two dimensions) and triple lines (three dimensions). A recent experiment on a triple node is used to validate the proposed model. The reduced triple node/line mobility in the case of a polycrystalline sample is shown to influence both, the grain growth kinetics and the grain size distribution function.     

Coarsening in Sintering: Grain Shape Distribution,Grain Size Distribution,and Grain Growth Kinetics in Solid-Pore Systems

Sintering occurs when packed particles are heated to a temperature where there is sufficient atomic motion to grow bonds between the particles. The conditions that induce sintering depend on the material, its melting temperature, particle size, and a host of processing variables. It is common for sintering to produce a dimensional change, typically shrinkage, where the powder compact densifies, leading to significant strengthening. Microstructure coarsening is inherent to sintering, most evident as grain growth, but it is common for pore growth to occur as density increases. During coarsening, the grain structure converges to a self-similar character seen in both the grain shape distribution and grain size distribution. Coarsening behavior during sintering conforms to classic grain growth kinetics, modified to reflect the evolving microstructure. These modifications involve the grain boundary coverage due to pores, liquid films, or second phases and the altered grain boundary mobility due to these phases. The mass transport rates associated with each of these interfaces are different, with different temperature and composition dependencies. Hence, the coarsening rate during sintering is not constant, but changes with the evolving microstructure. Core aspects treated in this review include models for coarsening, grain shape, grain size distribution, and how pores, liquids, dispersoids, and other phases determine microstructure coarsening during sintering.     

金刚石厚膜的微结构研究

 采用直流辉光等离子体化学气相沉积金刚石厚膜,利用氢的微波等离子体对抛光的金刚石厚膜截面进行刻蚀,用扫描电子显微镜、激光拉曼光谱仪研究了金刚石厚膜的微结构及杂质、缺陷的分布。结果表明：杂质、空洞主要富集在晶界处;在金刚石膜的生长过程中,随着甲烷流量的增加,晶界密度、空洞、晶粒内部缺陷、杂质含量逐渐增加,晶界的排列从以纵向为主过渡到网状结构。