Forbidden lines in the hyperfine spectrum of the electron paramagnetic resonance of Mn++ in BaTiO3

The hyperfine spectrum of Mn⁺⁺ in powder BaTiO₃ was studied at 8740 MHz andT=80°K. The measured lines appearing as doublets between the hyperfine lines of Mn⁺⁺ are explained as forbidden transitions of the typeM=±1,m=±1. A theoretical expression for the position of these doublets is given and some of the constants of the spin Hamiltonian are determined:g=2.001±0.001, ¦A¦=86 Oe,D 40 Oe.     

Thermoluminescent and stuctural properties of BaAl2O4:Eu,Nd,Gdphosphors prepared by combustion method

BaAl₂O₄:Eu²⁺,Nd³⁺,Gd³⁺ phosphors were prepared by a combustion method at different initiating temperatures (400–1200 °C), using urea as a comburent. The powders were annealed at different temperatures in the range of 400–1100 °C for 3 h. X-ray diffraction data show that the crystallinity of the BaAl₂O₄ structure greatly improved with increasing annealing temperature. Blue-green photoluminescence, with persistent/long afterglow, was observed at 498 nm. This emission was attributed to the 4f⁶5d¹–4f⁷ transitions of Eu²⁺ ions. The phosphorescence decay curves were obtained by irradiating the samples with a 365 nm UV light. The glow curves of the as-prepared and the annealed samples were investigated in this study. The thermoluminescent (TL) glow peaks of the samples prepared at 600 °C and 1200 °C were both stable at ∼72 °C suggesting that the traps responsible for the bands were fixed at this position irrespective of annealing temperature. These bands are at a similar position, which suggests that the traps responsible for these bands are similar. The rate of decay of the sample annealed at 600 °C was faster than that of the sample prepared at 1200 °C.     

Investigation of defect centres responsible for TL/OSL in MgAl2O4:Tb

Magnesium aluminate doped with Tb³⁺ (MgAl₂O₄:Tb³⁺) was prepared by combustion synthesis. Three thermoluminsence (TL) peaks at 120, 220 and 340 °C were observed. PL and TL emission spectrum shows that Tb³⁺ acts as the luminescent centre. Optically stimulated luminescence (OSL) was observed when stimulated by 470 nm blue light.Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the TL and OSL processes in MgAl₂O₄:Tb³⁺. Two defect centres were identified in irradiated MgAl₂O₄:Tb³⁺ phosphor by ESR measurements which was carried out at room temperature and these were assigned to V and F⁺ centres. V centre (hole centre) is correlated to 120 and 220 °C TL peaks and F⁺ centre (electron centre), which acts as a recombination centre is correlated to 120, 220 and 340 °C.     

In situ phase changes in a Fe-40 at.% Al ordered alloy during ion implantation: T.E.M. study

The radiation damage and disordering phenomena produced at room temperature during Fe⁺, Bi⁺⁺ and Xe⁺ ion implantations in a Fe-40 at.% A1 ordered alloy were studied by in situ transmission electron microscopy. Progressive, but not total disordering was achieved in the thinnest areas of the specimens during high fluence implantations (> 10¹⁵ ions/cm²). Simultaneously, the athermal formation of a new phase occurs in the case of Fe⁺ and Bi⁺⁺ implantations. The diffusion-less mechanism suggests a martensitic like transformation.

During post-implantation annealing, reordering and long-range order domain growth occurred in the temperature range up to 570 K. Above 670 K another phase appeared, which was stable up to 1070 K. The results are discussed and compared with those obtained on melt-quenched or neutron irradiated specimens of the same alloy.     

Photoluminescence of O2 and S2 ions in synthetic sodalities

Photoluminescence spectra of oxygen-doped chloro- and bromosodalites and sulfur-doped chloro-, bromo- and iodosodalites were measured at temperatures between 4.2 and 300 °K. At 4.2 and 77 °K, the emission spectra of oxygen-doped sodalites consisted of a series of peaks in the wavelength range 400–700 nm, with an average energy separation of ∼ 1000 cm^-1. In addition, fine structure, attributed to lattice modes, was observed in each vibrational band. At 4.2 and 77 °K, the sulfur-doped samples showed a multiband spectrum in the 500–750 nm range, with an average separation of ∼ 570 cm^-1 between bands. The spectrum at 4.2 °K exhibited some asymmetry not observed at 77 °K, but no fine structure was resolved. At 300 °K weak, broad-band luminescence was observed from both oxygen- and sulfur-doped samples, with no vibrational structure evident. The results compared very favorably with those reported for oxygen- and sulfur-doped alkali halides, and by analogy the spectra were attributed to luminescence from O^-₂ and S^-₂ molecular ions.     

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Metal-oxide-semiconductor capacitors (MOSCs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium silicate (Hf-silicate) dielectrics were fabricated by using atomic layer deposition (ALD). The electrical properties of these Hf-silicate thin films with various postnitridation annealing (PNA) temperatures were then examined to find the best nitridation condition. It is found that the best conditions to achieve the lowest gate leakage current and best equivalent oxide thickness (EOT) are when PNA is performed at 800 °C in NH₃ ambient for 60 s. To understand the obtained film, carrier transportation mechanisms, the temperature dependence of the leakage current was measured from 300 K to 500 K for both gate injection and substrate injection. The result reveals that the leakage mechanisms involve Schottky emission at high temperature and low electrical field and Poole-Frenkle emission at low temperature and high electrical field. The barrier heights of poly-Si/Hf-silicate and Hf-silicate/Si interfaces extracted from Schottky emission are 1.1 eV and 1.04 eV, respectively. The interface traps per unit area, the mean density of interface traps per area and energy and the mean capture cross-section are determined about 8.1 × 10¹⁰ cm⁻², 2.7 × 10¹¹ cm⁻² eV⁻¹ and 6.4 × 10⁻¹⁵ cm⁻² using charge pumping method.     

Half-width calculations for CO lines broadened by CO2

Half-widths of CO lines, in the fundamental and first overtone bands, broadened by CO₂ have been computed using the Anderson-Tsao-Curnutte theory. Comparison with the high-resolution measurements of Varanasi at 295°K shows excellent prediction of line widths by the theory. Comparison is also made between calculations including dipole-quadrupole and quadrupole-quadrupole interactions with those taking only the dominant quadrupole-quadrupole forces into account. Line widthd at 295°K range from 0.126417 cm^-1 atm^-1 fom m = 1 to 0.04397 cm^-1atm^-1 for m = 32, which corresponds to the asymptonic kinetic-theory value. Half-width computations are also presented at 200°K and 250°K appropriate for Martian and Venusian atmospheres, respectively.     

Calculation of the partition function for N2O

Internal and vibrational partition functions are tabulated for ¹⁴N₂¹⁶O for the temperature range 200–350°K at 10°K intervals. Rotational partition functions are also computed for the five lowest vibrational states.     

Temperature variation of the Debye-Waller factors of Ba++ and F− ions in BaF2 powder by x-ray diffraction

The temperature variation of the Debye-Waller factors of Ba⁺⁺ and F⁻ ions in BaF₂ powder has been studied using x-ray powder diffraction over the temperature range 77°–298°K. A continuous flow cryostat has been specially fabricated for this purpose for the YPC 50 NM powder diffractometer available in the department. The Debye-Waller factors of Ba⁺⁺ and F⁻ between room temperature and 879°K have been measured using single crystal neutron diffraction by Cooperet al. Theoretical lattice dynamics shell model calculations using a 7-parameter model in a quasiharmonic approximation have been done over a temperature range 77° to 879°K. The theoretical values have been compared with the present x-ray measurements and the single crystal neutron diffraction values and the results are discussed.     

Effects of implantation defects on the carrier concentration of 6H-SiC

The effects of ion irradiation defects on the carrier concentration of 6H-SiC epitaxial layer were studied by current–voltage (I–V), capacitance.-voltage (C–V) measurements, thermally stimulated capacitance and deep level transient spectroscopy. The defects were produced by irradiation with 10 MeV C⁺ at a fluence of 10¹¹ ions/cm² and subsequent thermal annealings were carried out in the temperature range 500–1700 K under N₂ flux. I–V and C–V measurements reveal the presence of a high defect concentration after irradiation and annealing at temperature lower than 1000 K. Thermally stimulated capacitance measurements show that some of the defects induce a deactivation of the nitrogen donor, while some of the generated defects, behaving as donor-like traps, contribute to increase the material free carrier concentration at temperatures above their freezing point. Deep level transient spectroscopy measurements performed in the temperature range 150–450 K show the presence of several overlapping traps after ion irradiation and annealing at 1000 K: these traps suffer a recovery and a transformation at higher temperatures. The annealing of all traps at temperatures as high as 1700 K allows one to completely restore the n-type conductivity. The defects mainly responsible of the observed change in the carrier concentration are identified. PACS 73.30.+y; 61.80.Jh; 61.82.Fk; 85.30.Hi     

Slow proton andΔ ++ production inK + p interactions at 70 GeV/c

The inclusive inelastic processesK ⁺ p→pX ⁺ andK ⁺ p→Δ ⁺⁺ X ⁰ are studied at an incident momentum of 70 GeV/c. The data comes from the Big European Bubble Chamber BEBC filled with hydrogen, exposed to an rf reparatedK ⁺ beam at the CERN SPS accelerator. The inclusive cross section for protons with laboratory momentump _LAB≦1.2 GeV/c is equal to (6.1±0.1) mb. InclusiveΔ ⁺⁺-production is studied for |t _{p, Δ}|<1.0(GeV/c)². Comparisons are made with otherK ⁺ p data and withpp data at 69 GeV/c. Evidence is found for Pomeron exchange at the beam vertex both for slow proton andΔ ⁺⁺-production as well as for absorptive pion exchange at the (p,Δ ⁺⁺) vertex.     

Off-centre effects in the triplet relaxed excited state of impurity ns2 ions in alkali halides

Abstract

An off-centre displacement of an excited ns² ion from a crystal lattice site is studied for Ga⁺, In⁺ and TI⁺ centres in alkali halides at 0.09-5 K by the time-resolved polarization spectroscopy method. A theory is developed, which considers the off-centre effects as a result of the mixing of the impurity ³nsnp and ³npnp excited states by T_1u vibrations.     

Production of delta isobars on tantalum nuclei in CTa collisions at a projectile momentum of 4.2 GeV/<Emphasis Type="Italic">c</Emphasis> per nucleon

A procedure that relies on analyzing the angle between the momenta of the proton and the pion originating from CTa interaction at a projectile momentum of 4.2 GeV/c per nucleon was used to investigate for the first time the production of Δ⁰ and Δ⁺⁺ resonances in such interactions and to determine their parameters. The criterion of stability in the parameter a characterizing the background contribution was presented for the first time and was used to reconstruct the mass distributions of Δ⁰ and Δ⁺⁺ resonances. The contributions of Δ⁰- and Δ⁺⁺-resonance decays to the production of charged pions were estimated. The results of this study are compared with similar data obtained by using the analogous procedure for Δ⁰ and Δ⁺⁺ resonances produced on carbon nuclei in CC and ⁴HeC collisions at a projectile momentum of 4.2 GeV/c per nucleon and in π ⁻¹²C interactions at a projectile momentum of 40 GeV/c.     

Studies on shallow traps in Li2B4O7:Eu,Mn

Li₂B₄O₇ (LTB) single crystals doped with 0.5 mol% Mn and 0.005 mol% Eu have been grown by the Czochralski method. The presence of Eu³⁺ has been confirmed by photoluminescence spectra of non-irradiated crystals, whereas the presence of Mn²⁺ by absorption spectra of gamma-irradiated ones, as well as by EPR measurements. Unlike in most thermoluminescence studies on pure and doped LTB, performed usually above 300 K, glow curves have been recorded between 10 and 300 K in order to focus the attention on shallow traps. A broad, intense glow peak is observed around 80 K, with three weaker peaks at 205, 255, and 280 K. Based on supplementary T_max − T_stop experiments, the trap parameters have been derived assuming that the glow curve is in fact formed by a superposition of a double Gaussian band related to a quasi-continuous distribution of trapping levels, and several glow peaks produced by discrete traps. The nature of the traps is also discussed.     

Temperature dependence of magnetic anisotropy in nanoparticles of CoxFe(3−x)O4

In this paper we present a study of the magnetic anisotropy constant of nanocrystalline magnetic particles of Co_xFe_(3−x)O₄, with x ranging from 0.05 to 1.6, synthesized by a combustion reaction. The magnetic anisotropy constants were obtained by fitting the high-field part of the major hysteresis loops with the law of approach equation down to temperatures of 4 K and up to fields of 60 kOe. The anisotropy constant depends strongly on both temperature and cobalt content x, exhibiting a nonmonotic dome-shaped dependence on x with a maximum at x=1.0. We found that fits at lower temperatures, i.e., 4 and 72 K, give values of K₁ that are approximately one order of magnitude higher than those at higher temperatures, i.e., 272 and 340 K. For example, K₁ for specimens with x=0.8 and 1.0 are 4.21×10⁷ and 4.22×10⁷ ergs/cm³ at 4 K, and 7.64×10⁶ and 7.51×10⁶ ergs/cm³ at 340 K, respectively. Thus, our determination of temperature-dependence of the anisotropy constant represents an improvement over existing works.     

Effects of neutron irradiation and subsequent annealing on the optical characteristics of sapphire

In this paper, the effect of neutron irradiation on sapphire single crystal with fast neutron of 1.0×10¹⁸ and 1.0×10¹⁹ neutrons/cm² has been investigated along with the effect of annealing temperature. It is found that the colorless transparent sapphire single crystals were turned yellow after 10 MeV fast neutron irradiation at room temperature. There are peaks at 206, 230, 258, 305, 358 and 452 nm after neutron irradiation. And the intensity of optical absorption bands decrease with wavelength and annealing temperature. A new absorption peak at 452 nm was found after isothermal annealing at 400 °C for 10 min, which was ascribed to F₂⁺ color center. Because of the recombination of interstitial ions and vacancies, color centers were almost removed after annealing at 1000 °C. The TL peaks were found to shift to higher temperature after neutron irradiation. And a higher fluence of the neutron irradiation would result in deep traps revealed as the new TL peaks at 176 and 227 °C.     

Temperature dependence of IR band strength for polyethylene

IR spectra at 150° K and detailed temperature curves for 150–310° K for the 965, 985, 1175, 1890, and 2010 cm^–1 bands are reported. The background bears a direct relation to temperature, whereas the bands have a negative temperature coefficient of intensity. The weakening of the 944 cm^–1 band is irreversible.     

Basic thermoluminescent and dosimetric properties of Al2O3:C irradiated by pulse intensive electron beam

The effect of deep traps filled by a pulse electron beam on the thermoluminescent (TL) properties in Al₂O₃:C dosimetric crystals is studied. When the deep traps are filled, the dosimetric peak at 170 °C acquires a double-peak structure not present in the initial samples. The effect of the population of the deep centers having various nature (electron or hole traps) and energy depth on the shape of the dosimetric TL peak structure is analyzed. An assumption is made that in the temperature ranges of 350–500 °C and 650–750 °C, electron traps are emptied, whereas at T = 500–650 °C hole traps are emptied. The possibility of using the TL associated with deep traps in high-dose dosimetry of pulse electron beams is shown.     

The decomposition pressure,congruent melting point and electrical resistivity of cerium nitride

The melting point of CeN in nitrogen was determined at pressures between 10⁻² and 21 atmospheres. Congruent melting was observed at T = 2575 ± 20°C and P = 5 ± 1 atmospheres. With lower nitrogen pressures, the melting point was related to the applied (or decomposition) pressure by the equation log P_atmos(N₂) = 18·5 − 5·1 × 10⁴/T. The electrical resistivities of samples prepared from these melts were measured at temperatures between 150–900°K. The room temperature resistivity of congruently melted samples was 21 μΩ-cm, which may be compared with the value of 75 μΩ-cm for cerium metal at this temperature. These samples had a positive (metallic) temperature dependence of resistivity of 0·11 μΩ-cm/°C at room temperature and increased with temperature to a value of 0·22 μΩ-cm/°C at a temperature of 700°K. The noncongruently melted samples had a similar behavior, but with somewhat higher values of resistivity. The room temperature Seebeck coefficients for both types of samples were approximately + 5 μV/°C, relative to platinum.