High energy (~ 107 eV) Si peak in Ar excited auger emission from silicon and silicides

The Ar⁺ excited electron emission from Si and Si-Ni compounds (from NiSi₂ to Ni₃Si) was studied, with emphasis on the high energy peak in the Si (L₂₃-related) spectrum. This peak is associated with the decay of Si atoms having two 2p holes (Si²*); therefore it originates in asymmetric (Ar-Si) collisions only. It has been investigated to determine the occurrence of these collisions with respect to the symmetric (Si-Si) ones and their relative weight.The threshold energy for the Si^2* related Auger emission was found to be about 2.9 keV in Si and silicides, significantly lower than previously reported. Above this threshold, the relative weight of the asymmetric collisions increases with ion energy and depends on the target stoichiometry, being greater in metal-rich silicides. However in the investigated ion energy range (1 to 5 keV) the total Auger yield was found to be mainly related to the symmetric collisions.We also investigated the dependence of the high energy Si peak on the excitation and acceptance geometry. The results indicate that asymmetric collisions are mainly “surface events”, resulting in the ejection of an anisotropic flux of energetic Si atoms.     

Ar+ excited aluminium Auger electron emission from Cu-Al alloys

The aluminium Auger electron emission from Cu-Al alloys in solid solution bombarded with 2–16 keV Ar⁺ ions is studied as a function of the Al concentration. A linear law is observed for the intensity of the high energy Auger peak at 76 eV which originates only from the primary asymmetric collisions Ar → Al where two vacancies are created in the 2p level of the Al atom. On the contrary, a parabolic law is found for the intensity of the principal Auger peak at 63.5 eV (one Al 2p vacancy) which originates from the asymmetric collisions Ar → Al and from the symmetric collisions Al → Al together. The proportion of asymmetric collisions among collisions effective for the principal Auger emission from pure aluminium can be deduced from these results. It appears as an increasing function of the bombardment energy: its value is nearly equal to 6% at 10 keV and 18% at 15 keV.     

Potassium Auger emission by K ion bombardment of the Ni(100) surface

Angle-resolved electron energy spectra induced by bombardment of a Ni(100) monocrystal surface with 0.5–4.5 keV energy K⁺ ions have been measured. In the case when the target is previously implanted by K⁺ ions a peak (discrete structure) in the energy range 15 < E < 17 eV is observed. This phenomenon has been ascribed to deactivation of M₂₃, vacancies of the K atom formed in the symmetrical collisions of projectiles with implanted or adsorbed surface K atoms. The phenomenon of the peak splitting at the higher projectile energies has been discussed within the frame of the Doppler effect in the specific case of symmetrical K-K collisions, where both collision participants can appear as Auger electron emitters.     

Real time observation of oxygen chemisorption states on Si(0 0 1)-2×1 during supersonic oxygen molecular beam irradiation

Employing Si 2p and O 1s photoemission spectroscopy using monochromated synchrotron radiation and the supersonic molecular beam technique, we have performed real time in situ observations of oxidation states on Si(0 0 1)-2×1 at room temperature. High-resolution Si 2p photoemission spectra, which unambiguously resolve oxide components [Si¹⁺, Si²⁺, Si³⁺ and Si⁴⁺], were successfully measured requiring only 43 s per spectrum. We found that the Si⁴⁺ species gradually increases to reach the oxide thickness of 0.57 nm just after the saturation of Si¹⁺, Si²⁺ and Si³⁺ species with a translational energy of 2.9 eV.     

Energy distributions of ions produced by electron-stimulated desorption

We have measured the initial kinetic energy distributions of ions produced by electron bombardment of various oxides and halides. The instrument used allows ions directly ejected from the sample surface to be distinguished from ions formed by electron impact in the gas phase. Singly and multiply charged positive ions of species present in the matrix as anions and cations were desorbed by high energy ( 11 keV) electron impact. Directly desorbed positive halogen ions show a narrow, low energy peak, consistent with conventional models of electron stimulated desorption (ESD). In addition, some of the cation species exhibited similar narrow energy spectra. Charge states up to +6 were observed for the halides; with the exception of F²⁺ and Cl²⁺, multiple charge states were due to electron impact ionization of desorbed neutrals. Charge states up to +4 were seen for silicon from electron-bombarded SiO₂; energy distributions of Si⁺, Si²⁺ and Si³⁺ showed that these species were desorbed directly from the surface. The energy distributions of O⁺ and O²⁺ ions ejected from SiO₂ are relatively wide, compared to the energy distribution of Si⁺ ions. In contrast, O⁺ ions ejected from TiO₂ have a much narrower energy distribution, like those observed for the halogen ions.     

Investigation of relative sputtering yields during ionoluminescence of Si

Atomic line emissions resulting from sputtered atoms and ions are investigated on Si(100) bombarded by 60 keV Ne⁺, 300 keV Xe⁺ and 300 keV SF₅⁺ ions. It has been observed that the presence of oxygen enhances light emission due to radiative de-excitation. Relative sputtering yields of Si for 60 keV Ne⁺, 300 keV Xe⁺ and 300 keV SF₅⁺ are estimated from the photon yields. The estimates of sputtering yields of adsorbed oxygen on Si for the above projectiles are also made from the transients of Si I 251.6 nm line. A non-linearity in the sputtering yield for SF₅⁺ ions was observed in comparison with the yields for Ne⁺ and Xe⁺ ions. The results are discussed with the model of overlapping of individual collision cascades.     

Secondary ion and Auger electron emissions from Ar+-ion-sputtered FeAl alloys

Some FeAl alloys, and pure Al and Fe samples, are sputtered in ultrahigh vacuum with Ar⁺ ions between 4 and 15 keV. As previously observed with CuAl alloys, the intensity of the principal Al Auger peak at 63.5 eV is a parabolic function of the Al concentration. Symmetric collisions Al → Al are thus much more efficient for Auger emission from pure aluminium than asymmetric collisions Ar → Al, the proportion of which among effective collisions hardly reaches 20% at 15 keV. Whatever the initial ion energy, the intensities of singly charged atomic secondary ions Al⁺ and Fe⁺, normalized to pure metals, are equal to the atomic concentration of the corresponding elements, whereas the normalized intensities of the multiply charged ions Al²⁺ and Al³⁺ are roughly equal to the square of Al concentration. These results agree with the occurence of two mechanisms in intrinsic ion emission: an electronic excitation process during the separation of the outgoing particle from the target (singly charged ions) and a collisional process from the symmetric collisions Al → Al only, with multiple Auger de-excitation outside the target (multicharged ions of light elements).     

Arq+入射金表面激发靶原子Mα-X射线的动能和势能的阈值

在兰州重离子加速器国家实验室 用动能150 keV和1.2 MeV的Ar^q+束流分别入射Au表面, 测量了离子与表面相互作用过程中辐射的X射线谱. 结果表明, 多电荷态Ar^q+激发Au原子的M_α-X射线至少需要2 keV的势能. 本文采用半经典两体碰撞近似, 估算了炮弹离子通过碰撞激发靶原子辐射X射线的动能阈值.     

New model for ion neutralization at surfaces

We investigate the neutralization of low energy He⁺ ions in close collisions with metal surface atoms. In order to describe the neutralization process as completely as possible, we consider Auger neutralization (AN), resonant neutralization (RN) and resonant ionization (RI). Our calculation agrees well with experimental data and shows that in some metals (like Pd) AN is the dominant process, whereas in others (like Al) RN and RI contribute significantly for energies above the threshold for reionization.     

Si,Lu掺杂Ca0.8Zn0.2TiO3:Pr3+荧光粉的光学性能改善

采用高温固相法合成Ca_0.8Zn_0.2TiO₃：0.2% Pr³⁺,Si⁴⁺和Ca_0.8Zn_0.2TiO₃：0.2% Pr³⁺,Si⁴⁺,Lu³⁺荧光粉。通过X射线衍射仪、电子顺磁共振光谱仪、显微拉曼光谱仪和荧光光谱仪等表征了该系列荧光粉的物相组成、微观结构和发光性质。结果表明,以β-Si₃N₄为硅源制备的荧光粉具有最佳的光学性能。加入ZnO后,荧光粉由CaTiO₃、Zn₂TiO₄和Ca₂Zn₄Ti₁₆O₃₈三相组成,其中CaTiO₃为主相。电子顺磁共振谱证实了Pr⁴⁺存在,Lu³⁺的添加使[Pr⁴⁺Ti³⁺O₃]⁺簇显著增加,电子顺磁共振谱和拉曼光谱均证实Si⁴⁺、Lu³⁺的掺杂使局部TiO₆簇对称性提高,有利于Pr³⁺发光中心的能量传递。在336 nm激发下,荧光粉展示了很强的位于612 nm的红光发射（归属于Pr³⁺的¹D₂→³H₄跃迁）及理想的红光色坐标（x=0.670,y=0.330）。Si⁴⁺和Lu³⁺的添加显著增强了370 nm激发下红光发射,Ca_0.8Zn_0.2TiO₃：0.2% Pr³⁺,3.2% Si⁴⁺荧光粉的余辉寿命最长。     

INFLUENCE OF C+-IMPLANTATION DOSE ON BLUE EMISSION AND MICROSTRUCTURES OF Si-BASED POROUS β-SIC

Crystal Si were implanted with different doses of C⁺ from 10¹¹ to 10¹⁷ cm^-2 at an energy of 50 keV. β-SiC precipitates were formed by thermal annealing at 1050 ℃ for 1 h and porous structures were prepared by electrochemical anodization. Under the excitation of ultraviolet, the samples, with C⁺ dose ≥10¹⁵ cm^-2 have intense blue emission which is stronger than the photoluminescence (PL) intensity of reference porous silicon (PS), and increases as C⁺ dose increases; the samples with C⁺ dose ≤10¹⁴ cm^-2 show similar PL spectra to those of PS. The blue peak intensity in PL spectra is correlated with the TO phonon absorption strength of β-SiC in infrared absorption spectra. The transmission electron microscopy study shows that the blue peak is also correlated with the microstructures. Because porous β-SiC is nanometer in size, it is suggested that the quantum confinement effect be responsible for the blue light emission.     

Observation of a new atomic-like peak in the ion-induced Auger spectrum of Si

We have observed Si L-shell Auger electrons from a silicon surface bombarded with 20 keV Ar⁺ ions at different angles of incidence. The measurements of angle-resolved electron energy distributions allowed us to separate the contributions to the Auger electron spectra coming from de-excitations inside and outside the solid. At grazing angles of incidence and observation, the Auger electron distributions resemble those from gas-phase atomic collisions. In these conditions we observed an atomic-like Auger peak with an energy close to that of the high energy edge of the Si L_2,3VV transition.     

Émission d'électrons auger caractéristiques du néon et du sodium,observée lors de collisions de ces ions avec différentes cibles solides

The Ne and Na Auger emission observed from collisions of these ionized gases with different solid targets, in an energy range from 5 to 50 keV, has been investigated. The Auger electron distributions were analyzed. Moreover, for the Ne⁺-Mg and Na⁺-Mg collisions, the Auger yield variation as a function of various parameters which influence the implantation, was studied. The experimental Auger yields ρ_A were compared to the calculated ones in a model which takes into account the stationnary concentration profiles of implanted atoms inside the target. For the Ne, the experimental results are in good agreement with the proposed model but this model is inadequate to explain the Na ρ_A variations as a function of ionic energy and incidence angle, at the room temperature.     

煅烧温度对Ba1.2Ca0.64SiO4：0.10Eu，0.06Mn粉体发光性能的影响

以MCM-41为硅源,在800~1 100℃下合成了Ba_1.2Ca_0.64SiO₄：0.10Eu,0.06Mn荧光粉,研究了煅烧温度对荧光粉发光性能的影响。实验结果表明,Eu²⁺的蓝绿光发射带的强度与宽度随煅烧温度的升高先增大后减小,在1 000℃时强度达到最大。最大发射峰位随温度的升高而发生红移,由800℃和900℃时的450 nm移至1 000℃和1 100℃时的480 nm。Mn²⁺的红光发射起源于Eu²⁺发射光的激发,其强度随温度的升高而增大。与Mn²⁺发生能量传递作用的Eu²⁺主要位于10配位的M（1）格位。     

Secondary ion emission from clean and K-covered Ni surfaces near threshold impact energies

Clean and K-covered Ni surfaces are bombarded with low energy (10–500 eV) beams of He⁺, Ne⁺, Ar²⁺, and Kr⁺ ions, and the emitted ion yield is measured as a function of beam energy. The apparent threshold energies for K⁺ and Ni⁺ emission are proportional to the ionic binding energies of K⁺ and Ni⁺ to the Ni surface. From comparison of the ion and neutral yield curves, it is suggested that these ions are emitted via momentum transfer collisions similar to neutral sputtering.     

Surface analysis by ion-electron spectroscopy; Silicon target

The energy spectra of secondary elections emitted from a Si(111) surface due to bombardment by 6 keV He⁺ and O⁺₂ ions have been examined. The fine structure in the spectra is explained on the basis of a novel mechanism of creation of Auger electrons at the surface. There are two stages of interaction between incoming ions and the substrate via adsorbed atoms. In the first stage, due to a level promotion mechanism, vacancies in the adsorbed atoms are created. In the second stage, Auger neutralization processes accompanied by the emission of electrons from a solid with characteristic energies take place. These electrons provide a good indication of the degree of coverage of the silicon surface with contaminant atoms. The energy losses of escaping electrons are also discussed.     

VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE

Germanium ions were implanted into SiO₂ films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×10¹⁵ and 1×10¹⁶ cm^-2.Under an ultraviolet excitation of ～5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T₁→S₀ transition in GeO,which was formed during implantation and annealing process.     

Theoretical and experimental study of N(D) formation in nitrogen collisions with a metal surface

The dynamics of nitrogen collisions with metals partially covered by alkali atoms is studied both experimentally and theoretically. Our attention focuses on the formation of N⁻(¹D) metastable ions and their interaction with the surface. We present the electron energy spectra induced by slow collisions of N⁺ ions with partially cesiated Pd(111) surfaces under grazing incidence. These spectra display, as a function of Cs coverage, a sharp feature which is due to the autodetachment of N⁻(2p⁴, ¹D) to the N(2p³, ⁴S) ground state. Our calculations, performed with the coupled angular mode (CAM) method on the basis of the resonant electron exchange between the nitrogen atom in states of the 2p³ configuration and the metal surface, consistently explain how negative ions formed close to the surface can survive against electron loss to the metal during the outgoing trajectory and can later decay as free ions. In order to understand the alkali coverage dependence of the N⁻(¹D)-N(⁴S) peak intensity, the local character of the nitrogen interaction with the surface partially covered by adsorbate atoms has been taken into account.     

Ion-induced secondary electron and negative ion emission from Mo/O

Absolute yields of secondary electrons and negative ions resulting from collisions of Na⁺ with Mo(100) and a polycrystalline molybdenum surface have been measured as a function of the oxygen coverage of the surface for impact energies below 500 eV. The sputtered negative ions have been identified with mass spectroscopy, and O⁻ is found to be the dominant sputtered negative ion for the surfaces at all oxygen coverages and impact energies. Both the electron and O⁻ yields have an impact energy threshold at about 50 eV and exhibit a strong dependence on oxygen coverage. The kinetic energy distributions of the secondary electrons and sputtered O⁻ were determined as functions of the oxygen coverage and impact energy. The distributions for O⁻ are characterized by a narrow low-energy peak (at 1–2 eV) followed by a low-level high-energy tail. The secondary electrons have a narrow (FWHM 1–2 eV) kinetic energy distribution, centered approximately at 1–2 eV. The shapes of the distributions and their most probable energies are essentially invariant with impact energy, oxygen coverage and the nature of the Mo surface. The emission is explained and analyzed in terms of a simple model which involves a collision-induced electronic excitation of the MoO⁻ surface state. The decay of this excited state leads to the production of both secondary electrons and O⁻ with energy distributions and yields comparable to those observed.