Study of the semi-conducting properties of pyrolusite

The electrical conductivity σ of the specimens is found to obey a relation of the type σ=C exp (?B/k T) over a temperature range 300 to 500° K whereC andB are constants. The experimentally determined values ofB and C are (1)B≈1490 to 2199 (2)C ≈ 0·72 × 10^?3 to 4·9 × 10^?3 ohms^?1 cms^?1. The value of the activation energy determined from the values ofB are ≈0·13 to 0·19 e.V. In A.C measurements σ is found to vary with voltage applied across the specimen at a given temperature. The i?V characteristics of metal point semi-conductor contacts are non-linear symmetrical curves and are strongly temperature dependant. The value of the Hall constant (?0·14 cm³/coul) yields carrier concentration as 4·3 × 10¹⁹/cm³, and mobility 1·2 cm² volt^?1 second^?1. Δ?/? for the specimen is found to vary asH ² where ? is the resistivity andH the value of magnetic field. The specimens develop a thermo-electric power of magnitude 200 μV/K to 500 μV/K which is fairly constant over the temperature range 300 to 800° K. The sign of the thermo-e.m.f. and of the Hall constant indicate that the specimens are “n” type.     

Two-dimensional electron-hole system in a HgTe-based quantum well

A two-dimensional electron-hole system consisting of light high-mobility electrons with a density of N _s = (4–7) × 10¹⁰ cm^?2 and a mobility of μ _n = (4–6) × 10⁵ cm²/V s and heavier low-mobility holes with a density of P _s = (0.7–1.6) × 10¹¹ cm^?2 and a mobility of μ _p = (3–7) × 10⁴ cm²/V s has been discovered in a quantum well based on mercury telluride with the (013) surface orientation. The system exhibits a number of specific magnetotransport properties in both the classical magnetotransport (positive magnetoresistance and alternating Hall effect) and the quantum Hall effect regime. These properties are associated with the coexistence of two-dimensional electrons and holes.     

Anomalous hall effect in a diluted <Emphasis Type="Italic">p</Emphasis>-InAs〈Mn〉 magnetic semiconductor

The dependences of the electrical resistivity and the Hall coefficient of single-crystal p-InAs〈Mn〉 bulk samples with an acceptor concentration of about 10¹⁸ cm^–3 on uniform pressure P = 4–6 GPa at T = 300 K in the region of impurity conduction are quantitatively analyzed. The anomalous Hall effect is shown to occur in p-InAs〈Mn〉. Its contribution is negative and correlates with the deionization of acceptors and an increase in the magnetic susceptibility.     

The dielectric and piezoelectric behaviour of pyrolusite (polycrystalline ore of MnO2)

The variation of dielectric constant? of pyrolusite (sintered polycrystalline ore of MnO₂) with temperature, frequency and voltage has been studied within the frequency range 200 c/s to 10 kc/s. The samples studied show a very high value of dielectric constant ≈ 10⁵. The?-temperature curve indicates that? attains a maximum value at a certain temperature. The temperature at which? attains a maximum value appears to vary from sample to sample. At higher temperatures (i.e. higher than that at which? attains a maximum value),? decreases with temperature as?=c/(T?Θ). The dielectric constant is dependent on the frequency; it has a higher value at lower frequencies. The applied voltage across the specimen has a marked influence on the dielectric constant, which increases rapidly with voltage. A capacity with pyrolusite as dielectric shows a hysteresis loop (electrical). The dielectric loss factor tanδ is found to depend on temperature, frequency and voltage. Tanδ attains a maximum value at lower range of frequencies between 300 c/s to 700 c/s, for a given voltage, and temperature. This indicates the existence of dielectric relaxation for these specimens. Tanδ also varies exponentially with temperature. Samples of pyrolusite studied show a piezo electric effect as well. The electromechanical coupling coefficient is found to vary from 2·4×10^?5 to 8·8×10^?5 e.s.u/ dyne. Slabs cut from the samples of pyrolusite mineral were found to control the frequency of a Hartley oscillatory circuit. The resonant frequency range was found to increase as the thickness of the slab is reduced.     

Electrical and thermoelectric properties of nanoporous carbon

This paper reports on a study of the temperature dependences of the electrical resistivity, Hall coefficient, and thermopower of nanoporous carbon prepared from polycrystalline carbides (α-SiC, TiC, Mo₂C) and 6H-SiC single crystals in the temperature range 1.5–300 K. The structural units responsible for the character of charge transport in these materials are carbon nanoclusters measuring ～10–30 Å. The conductivity in all the samples studied was found to be p type with a high carrier concentration (n_h ～ 10²⁰ cm^?3). The behavior of the transport coefficients at low temperatures is discussed.     

Structure and electrophysical properties of ferrocobaltites <Emphasis Type="Italic">Ln</Emphasis>BaFeCoO<Subscript>5 + δ</Subscript> (<Emphasis Type="Italic">Ln</Emphasis> = Tb,Dy, Ho,Y)

The ferrocobaltites LnBaFeCoO^{5 + δ} (Ln = Tb, Dy, Ho, Y) have been synthesized, and the parameters of their crystal structure have been determined. The thermal expansion, electrical resistivity ρ, and thermopower S of the synthesized compounds have been investigated in air at temperatures in the range from 300 to 1100 K. The compounds have a tetragonal structure (symmetry space group P4/mmm) with the unit cell parameters a = 3.9000 Å and c = 7.5922 Å (Ln = Tb, δ = 0.31), a = 3.8973 Å and c = 7.5679 Å (Ln = Dy, δ = 0.34), a = 3.8970 Å and c = 7.5507 Å (Ln = Ho, δ = 0.28), and a = 3.9029 Å and c = 7.5538 Å (Ln = Y, δ = 0.25). The ferrocobaltites under investigation are p-type semiconductors, and their electrical resistivity ρ and thermopower S decrease in the sequence Tb → Ho → Y → Dy (at room temperature). The linear thermal expansion coefficient of the LnBaFeCoO^{5 + δ} phases in the vicinity of the temperatures ranging from 465 to 535 K increases from (1.15?1.23) × 10^?5 to (1.73?1.93) × 10^?5 K^?1. The parameters of charge transfer in these ferrocobaltites have been determined. It has been found that an increase in the temperature leads to an increase in the excitation energy of charge carriers and a decrease in the activation energy of charge carrier transfer.     

Untersuchung über die gasionisierende Strahlung einer Entladung II

This paper gives a report on measurements of the coefficient of absorption and intensities of a gas-ionizing radiation, which is emitted by a gas discharge. Earlier measurements in oxygen with a discharge in a cylindrical electrical field had yielded components of radiation with values ofμ≈550,μ≈250, andμ= 38 cm^?1 according to 760 mm Hg. By new measurements using a spark discharge an additional component with a value ofμ=2,5 has been found, which already has been measured by other authors. Measurements with mixtures of oxygen and nitrogen are compared with results of measurements in air. From this it may be deduced that the gas-ionizing radiation effective in air is essentially emitted by nitrogen and ionizes oxygen, the coefficient of absorption being aboutμ≈5 cm^?1. The number of ionizing quantums emitted per ionizing collision of electrons in the discharge tube is about 10^?3 for oxygen, nitrogen, and air. In oxygen this figure proves to be essentially independent ofE/p. In air, however, this figure is reduced with increasing values ofE/p. The absorption of the ionizing radiation in air is increased by the addition of methane (μ=960 cm^?1 for 760 mm Hg of methane). In carbon dioxyde several components of ionizing radiation are found, with coefficients of absorption in the range 200<μ<800.     

Die charakteristische Thermokraft der Grenzflächenatome

For a single-band conductor where two or more scattering mechanisms are present, each giving rise to a characteristic thermoelectric powerS _n and a electrical resistivity? _n the resultant thermoelectric powerS is given, as a first approximation, by\(S = \sum\limits_n {\varrho _n S_n /\varrho } \). Denoting withS ₀ the characteristic thermoelectric power due to the scattering of the conduction electrons by the boundary atoms, and withS _i and? _i the resultant thermoelectric power and electrical resistivity arising from all other scattering mechanisms, one may writeS=S ₀+? _i(S _i?S ₀)/?. The thermoelectric powerS and the electrical resistivity? of thin layers of potassium, evaporated in a vacuum ～5·10^?9 Torr on a glass substrate at 90° K temperature, were measured at different thicknesses. The variation ofS as a function of 1/? verifies the above mentioned relation. Thus, the thermoelectric power, characteristic for the scattering by potassium boundary atoms can be determined.     

Thermoelectric properties of layered ferrocuprates <Emphasis Type="Italic">Ln</Emphasis>BaCuFeO<Subscript>5 + δ</Subscript> (<Emphasis Type="Italic">Ln</Emphasis>= La,Pr, Nd,Sm, Gd-Lu)

The electrical resistivity ρ and the thermopower S of ceramic materials LnBaCuFeO_{5 + δ} (Ln= La, Pr, Nd, Sm, Gd-Lu) are measured in air at temperatures in the range from 300 to 1100 K. All the studied ferrocuprates are p-type semiconductors. The electrical resistivity ρ and the thermopower S of these compounds increase with a decrease in the radius of the Ln ³⁺ cation (with an increase in the number of 4f electrons n in Ln ³⁺). The nonmonotonic behavior of the dependences ρ=f(n) and S=f(n) indicates that the electrical properties of the layered ferrocuprates LnBaCuFeO_{5 + δ} depend on the electronic configuration of the Ln ³⁺ cation. The power factors P calculated for the LnBaCuFeO_{5 + δ} ceramic materials from the experimental values of ρ and S increase with increasing temperature and, at T = 1000 K, reach the maximum values P = 102.0 and 54.1 µW m^?1 K^?2 for Ln = Pr(4f ²) and Sm(4f ⁵), respectively, and become close to each other and equal to 30–35 µW m^?1 K^?2 for Ln = Gd(4f ⁷), Dy(4f ⁹), and Ho(4f ¹⁰).     

Disorder effect on the quantum Hall effect in thin films of three-dimensional topological insulators

We numerically study the quantum Hall effect (QHE) in three-dimensional topological insulator (3DTI) thin film in the presence of the finite Zeeman energy g and the hybridization gap Δ under a strong magnetic field and disorder. For Δ = 0 but g ≠ 0, the Hall conductivity remains to be odd-integer quanti-zed σ _xy = ν(e ²/h) , where ν = 2? + 1 with ? being an integer. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center and the higher plateaus disappear first. The two central plateaus with ν = ± 1 around the band center are strongest against disorder scattering. With the increasing of the disorder strength, Hall plateaus are destroyed faster for the system with a weaker magnetic field. If g = 0 but Δ ≠ 0, there is a splitting of the central (n = 0) Landau level, yielding a new plateau with ν = 0, in addition to the original odd-integer plateaus. In the strong-disorder regime, the QHE plateaus can be destroyed due to the float-up of extended levels toward the band center. The ν = 0 plateau around the band center is strongest against disorder scattering, which eventually disappears. For both g ≠ 0 and Δ ≠ 0, the simultaneous presence of nonzero g and Δ causes the splitting of the degenerating Landau levels, so that all integer Hall plateaus ν = ? appear. The ν = 0,1 plateaus are the most stable ones. In the strong-disorder regime, all QHE states are destroyed by disorder, and the system transits into an insulating phase.     

Hall-Koeffizient und spezifischer elektrischer Widerstand flüssiger Metallegierungen

The Hall coefficient and the electrical resistivity of liquid alloys has been measured with an ac current — ac magnetic field method. The experimental Hall coefficients are in agreement with the values given by the free-electron model. If for alloys of the Ag-In type the Fermi wave numbers 2k _F deduced from the experimental Hall coefficients agree with the wave numbersK _p of the first maximum of the partial or total correlation functionsa _AB ora(K), negative temperature coefficients and a maximum of the electrical resistivity are observed for the corresponding concentrations. For alloys of the In-Sn type,K _p is allways smaller than 2k _F, and these alloys do not show any anomalies of the electrical resistivity. The behavior of the electrical resistivity can be explained using the formula for liquid alloys due toFaber andZiman.     

Über Kristallstruktur und elektrische Eigenschaften der Wismutselenide Bi2Se2 und Bi2Se3

The properties of bismuth triselenide (Bi₂Se₃) are already known to a certain extent through the work of several authors, while it was still an open question whether there exists an individual solid phase of BiSe. Further information on this subject could be obtained by the successful growth and investigation of single crystals of both Bi₂Se₃ and Bi₂Se₂. X-ray analysis by means of goniometry, Weißenberg, Laue, and Debye-Scherrer diagrams confirmed the known crystal structure of Bi₂Se₃ (ditrigonal scalenohedral;D _3d ⁵ ?R—m; with the hexagonal axes:a=4·15 Å andc=28·55 Å, and 3 molecules per unit cell). As to Bi₂Se₂ it can be shown that it belongs to the same class but to a different space group (D _3d ¹ ?P— 1m orD _3d ³ ?P—m 1; hexagonal axes:a=4·15 Å,c=22·84 Å, unit cell: 3 molecules, if the formula Bi₂Se₂ is adopted). Common to both is a subcell with the dimensions:a′=a=4·15 Å andc′=5·71 Å. The temperature dependence of electrical conductivity and Hall coefficient was measured on several specimens having different crystal orientations. The most striking difference is the high anisotropy of Bi₂Se₃ (σ _a σ _c =10) as compared with Bi₂Se₂ (σ _a /σ _c <2). All specimens turned out to ben-type. The room temperature carrier concentration observed was:n (Bi₂Se3)=8·10¹⁸ cm^?3 andn (Bi₂Se₂)=4·10²⁰ cm^?3, the carrier mobility:μ(Bi₂Se3)=2·10³ cm²/V·s andμ(Bi₂Se₃)=20 cm²/V·s.     

Hall effect in the Fe<Subscript>x</Subscript>Mn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S magnetic semiconductors

The electrical properties and the Hall effect in the Fe_xMn_1?xS magnetic semiconductors (0<x≤0.5) have been experimentally studied in the range 77–300 K in magnetic fields of up to 15 kOe. The cation-substituted sulfides with 0.25≤x≤0.3 possessing colossal magnetoresistance (CMR) were established to be narrow-gap semiconductors with carrier concentrations n ～ 10¹¹–10¹⁵ cm^?3 and high carrier mobilities μ ～ 10²–10⁴ cm² V^?1 s^?1. It is believed that the CMR effect in these sulfides can be explained in terms of the model of magnetic and electron phase separation, which is analogous to the percolation theory in the case of heavily doped semiconductors.     

Mechanism of charge transfer in <Emphasis Type="Italic">n</Emphasis>-CdS/<Emphasis Type="Italic">p</Emphasis>-CdTe heterojunctions

The capacitance-voltage and current-voltage characteristics of the n-CdS/p-CdTe heterosystem are investigated. Analysis of these characteristics demonstrates that the CdTe_1?x S _x solid solution formed at the n-CdS/p-CdTe heterointerface is inhomogeneous in both the conductivity and composition. The thickness of solid solutions is estimated from the capacitance-voltage characteristics. It is shown that, for the n-CdS/p-CdTe heterosystem, the current-voltage characteristic in the current density range 10^?8-10^?5 A cm^?2 is governed by the thermal electron emission, whereas the current in the heterostructure at current densities in the range 10^?4-10^?2 A cm^?2 is limited by recombination of charge carriers in the electroneutral region of the CdTe_1?x S _x solid solution. The lifetime and the diffusion length of minority charge carriers in the CdTe_1?x S _x solid solution and the surface recombination rate at the interface between the CdS layer and the CdTe_1?x S _x solid solution are determined. It is demonstrated that the n-CdS/p-CdTe heterostructure operates as a p-i-n structure in which CdTe is a p layer, CdTe_1?x S _x is an i layer, and CdS is an n layer.     

Ultra-violet bands of mercury chloride

The Ultra violet bands of mercury chloride have been excited in uncondensed discharge and photographed with a quartz Littrow Spectrograph. The Class II system betweenλ 2900 to 2700 suggested by Wieland as due to the triatomic molecule has been studied in detail. In addition to the bands already recorded by previous investigators, a number of new bands has been recorded in the present investigation. A new vibrational analysis of these bands is given. The entire bands are ascribed to the longer wavelength component of² π-² ?, the other component being the system in the regionλ 2650 to 2400 with a² π interval of 3335 cm^?1 which is in keeping with the corresponding intervals obtained in the case of HgF and Hg I respectively. The following vibrational constants have been determined.Ν _e Ω′ _e Ω″ _e 36346 cm?1 385 cm?1 292.5 cm?1     

Violation of light beam reversibility principle in optical media with a random quasi-zero refractive index

The relic abundance of light millicharged particles (MCPs) with the electric charge e′ = 5 × 10^–5 e and with the mass slightly below or above the electron mass is calculated. The abundance depends on the mass ratio η = m _X /m _e and for η < 1 can be high enough to allow MCPs to be the cosmological dark matter or to make a noticeable contribution to it. On the other hand, for η ? 1 the cosmological energy density of MCPs can be quite low, Ω _X h ₀ ² ≈ 0.02 for scalar MCPs, and Ω _X h ₀ ² ≈ 0.001 for spin 1/2 fermions. But even the lowest value of Ω _X h ₀ ² is in tension with several existing limits on the MCP abundances and parameters. However, these limits have been derived under some natural or reasonable assumptions on the properties of MCPs. If these assumptions are relaxed, a patch in the mass–charge plot of MCPs may appear, permitting them to be dark matter particles.     

On the binding of atoms with antiatoms

The stability of X⁺Y⁺X^?Y^? Coulomb molecules consisting of X⁺Y^? atoms and X^?Y⁺ antiatoms to dissociation is studied. On the basis of multiparameter variational calculations, it is found that such molecules are stable to dissociation into X⁺X^? atoms and Y⁺Y^? antiatoms if the mass ratio of particles X and Y lies in the range 0.4710<m _X /m _Y <2.1231. The e⁺e⁺e^?e^?, π⁺μ⁺π^?μ^?, t⁺d⁺t^?d^?, p⁺K⁺p^?K^?, and d⁺p⁺d^?p^? molecules satisfy this condition.     

Phenomenology of light- and strange-quark simultaneous production at high energies

This letter presents an extension of EPL116(2017)62001 to light- and strange-quark nonequilibrium chemical phase-space occupancy factors (γ_q,s). The resulting damped trigonometric functionalities relating γ_q,s to the nucleon-nucleon center-of-mass energies (\(\sqrt {{s_{NN}}} \)) looks very similar except different coefficients. The phenomenology of the resulting γ_q,s(\(\sqrt {{s_{NN}}} \)) describes a rapid decrease at \(\sqrt {{s_{NN}}} \) ? 7GeV followed by a faster increase up to ~20 GeV. Then, both γ_q,s become nonsensitive to \(\sqrt {{s_{NN}}} \). Although these differ from γ _s (\(\sqrt {{s_{NN}}} \))obtained at γ _q (\(\sqrt {{s_{NN}}} \))=1, various particle ratios including K⁺/π⁺, K^?/π^?, Λ/π^?, Λ?/π^?, Ξ⁺/π⁺, and Ω/π^?, can well be reproduced, as well. We conclude that γ_q,s(\(\sqrt {{s_{NN}}} \)) should be instead determined from fits of various particle yields and ratios but not merely from fits to the particle ratio K⁺/π⁺.     

Energy spectrum of holes in Sb<Subscript>2</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> solid solution according to the data on the transfer phenomena

The temperature dependence of the Hall coefficient of a single crystal of the p-Sb₂Te_2.9Se_0.1 solid solution grown by the Czochralski technique is studied in the temperature range 77–450 K. The data on the Hall coefficient of the p-Sb₂Te_2.9Se_0.1 are analyzed in combination with the data on the Seebeck and Nernst–Ettingshausen effects and the electrical conductivity with allowance for interband scattering. From an analysis of the temperature dependences of the four kinetic coefficients, it follows that, at T < 200 K, the experimental data are qualitatively and quantitatively described in terms of the one-band model. At higher temperatures, a complex structure of the valence band and the participation of the second-kind additional carriers (heavy holes) in the kinetic phenomena should be taken into account. It is shown that the calculations of the temperature dependences of the Seebeck and Hall coefficients performed in the two-band model agree with the experimental data with inclusion of the interband scattering when using the following parameters: effective masses of the density of states of light holes m_d1^*≈ 0.5m₀ (m₀ is the free electron mass) and heavy holes m_d2^*≈ 1.4m₀, the energy gap between the main and the additional extremes of the valence band ΔE_v ≈ 0.14 eV that is weakly dependent on temperature.     

Genesis of the anomalous Hall effect in CeAl<Subscript>2</Subscript>

The Hall coefficient R _H , resistivity ρ, and Seebeck coefficient S of the CeAl₂ compound with fast electron density fluctuations were studied in a wide temperature range (from 1.8 to 300 K). Detailed measurements of the angular dependences R _H (? T, H≤70 kOe) were performed to determine contributions to the anomalous Hall effect and study the behavior of the anomalous magnetic R _H ^am and main R _H ^a components of the Hall signal of this compound with strong electron correlation. The special features of the behavior of the anomalous magnetic component R _H ^am were used to analyze the complex magnetic phase diagram H-T determined by magnetic ordering in the presence of strong spin fluctuations. An analysis of changes in the main contribution R _H ^a (H, T) to the Hall effect made it possible to determine the complex activation behavior of this anomalous component in the CeAl₂ intermetallic compound. The results led us to conclude that taking into account spin-polaron effects was necessary and that the Kondo lattice and skew-scattering models were of very limited applicability as methods for describing the low-temperature transport of charge carriers in cerium-based intermetallic compounds. The effective masses and localization radii of manybody states in the CeAl₂ matrix were estimated to be (55–90)m₀ and 6–10 Å, respectively. The behaviors of the parameters R _H , S, and ρ were jointly analyzed. The results allowed us to consistently describe the transport coefficients of CeAl₂.