Structure and mechanical properties of Ni-P electrodeposited coatings

The coatings with different phosphorus contents were obtained by varying the concentration of H₃PO₃ in the electroplating bath. With the increase of phosphorus content, the structure of the Ni-P electrodeposited coatings transformed from microcrystalline to a mixture of nanocrystalline and amorphous phases, then to amorphous phase. A high hardness value of 710 HV_0.1 of as-deposited Ni-P coating was obtained at 8.3 at.% phosphorus content, and high wear resistance was accordingly achieved. The refined nanocrystalline grains with average size of about 7 nm were found to be responsible for the high hardness and improved wear resistance of the as-deposited Ni-P electrodeposited coating.     

Grain boundaries of nanocrystalline materials – their widths, compositions, and internal structures

Nanocrystalline materials contain many atoms at and near grain boundaries. Sufficient numbers of Mössbauer probe atoms can be situated in grain boundary environments to make a clear contribution to the measured Mössbauer spectrum. Three types of measurements on nanocrystalline materials are reported here, all using Mössbauer spectrometry in conjunction with X-ray diffractometry, transmission electron microscopy, or small angle neutron scattering. By measuring the fraction of atoms contributing to the grain boundary component in a Mössbauer spectrum, and by knowing the grain size of the material, it is possible to deduce the average width of grain boundaries in metallic alloys. It is found that these widths are approximately 0.5 nm for fcc alloys and slightly larger than 1.0 nm for bcc alloys. Chemical segregation to grain boundaries can be measured by Mössbauer spectrometry, especially in conjunction with small angle neutron scattering. Such measurements on Fe-Cu and Fe₃Si-Nb were used to study how nanocrystalline materials could be stabilized against grain growth by the segregation of Cu and Nb to grain boundaries. The segregation of Cu to grain boundaries did not stabilize the Fe-Cu alloys against grain growth, since the grain boundaries were found to widen and accept more Cu atoms during annealing. The Nb additions to Fe₃Si did suppress grain growth, perhaps because of the low mobility of Nb atoms, but also perhaps because Nb atoms altered the chemical ordering in the alloy. The internal structure of grain boundaries in nanocrystalline materials prepared by high-energy ball milling is found to be unstable against internal relaxations at low temperatures. The Mössbauer spectra of the nanocrystalline samples showed changes in the hyperfine fields attributable to movements of grain boundary atoms. In conjunction with SANS measurements, the changes in grain boundary structure induced by cryogenic exposure and annealing at low temperature were found to be somewhat different. Both were consistent with a sharper density gradient between the crystalline region and the grain boundary region.     

Synthesis of Ge nanocrystals by atom beam sputtering and subsequent rapid thermal annealing

Ge nanocrystals embedded in an SiO₂ matrix were prepared by the atom beam co-sputtering (ABS) method from a composite target of Ge and SiO₂. The as-deposited films were rapid thermally annealed at the temperatures 700 and 800 °C in nitrogen ambience. The structure of the films was evaluated by using X-ray diffraction (XRD) and Raman spectroscopy. XRD results reveal that as-deposited films are amorphous in nature whereas annealed samples show crystalline nature. Raman scattering spectra showed a peak of Ge–Ge vibrational mode shifted downwards to 297 cm^?1, presumably caused by quantum confinement of phonons in the Ge nanocrystals. Rutherford backscattering spectrometry has been used to measure the thickness and Ge composition of the composite films. Size variation of Ge nanocrystals with annealing temperature has been discussed. The advantages of ABS over other methods are highlighted.     

Semiconducting In2S3 quantum dots in thin film form: sonochemical versus conventional chemical synthesis and investigation of their structural and optical properties

Indium(III) sulfide quantum dots were deposited in thin film form using both a conventional chemical bath deposition method and a sonochemical route. The developed routes allow deposition of cubic α-In₂S₃ nanocrystals in thin film form. The as-deposited films produced by the conventional and sonochemical approaches are highly nanocrystalline, with average crystal sizes of 2.5 and 2.0 nm correspondingly (as determined from the Scherrer formula), which increase to 4.1 nm upon annealing treatment, due to coalescence and crystal-growth processes. Refinement of the lattice-constant value in the case of as-deposited and annealed films was performed using linear regression analysis. Blue-shifted band-gap energy values of as-deposited films with respect to those corresponding to bulk specimen, accompanied with the red shift of absorption onset upon annealing, strongly indicate the quantum-dot behavior of the synthesized nanocrystals. The detected three-dimensional quantum-confinement effects in the synthesized nanocrystals were discussed in terms of the Brus model. On the basis of optical spectroscopic data, we estimated the Bohr's excitonic radius value in this semiconductor. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

Nanocrystalline silicon films prepared by laser—induced crystallization

The excimer laser-induced crystallization technique has been used to investigate the preparation of nanocrystalline silicon (nc-Si) from amorphous silicon ($\al$-Si) thin films on silicon or glass substrates. The $\al$-Si films without hydrogen grown by pulsed-laser deposition are chosen as precursor to avoid the problem of hydrogen effluence during annealing. Analyses have been performed by scanning electron microscopy, atomic force microscopy, Raman scattering spectroscopy and high-resolution transmission--electron microscopy. Experimental results show that silicon nanocrystals can be formed through laser annealing. The growth characters of nc-Si are strongly dependent on the laser energy density. It is shown that the volume of the molten silicon predominates essentially the grain size of nc-Si, and the surface tension of the crystallized silicon is responsible for the mechanism of nc-Si growth.     

Annealing behaviour of nanocrystalline NiTi (50 at% Ni) alloy produced by high-pressure torsion

An equiatomic nanocrystalline NiTi alloy, deformed by high-pressure torsion (HPT), was investigated. The as-prepared bulk NiTi alloy consisted of both amorphous and nanocrystalline phases. Crystallization and structural changes during annealing were investigated by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and transmission electron microscopy (TEM). DSC thermograms and X-ray analyses revealed stress relaxation and partial crystallization below 500?K, while grain growth of the nanocrystals occurred predominantly after heating to temperatures above 573?K. Along with the amorphous phase crystallization, a continuous growth of pre-existing nanocrystals that are retained after HPT was observed. The DSC signals observed during continuous heating experiments indicate an unusually large separation between the crystallization and growth stages. A detailed analysis of the evolution of the enthalpy release upon annealing revealed reproducibly non-monotonous trends with annealing temperature that cannot be explained solely by nucleation and growth of crystalline volume fractions. Instead, the results can be rationalized by assuming a reverse amorphization process occuring during annealing at 523?K. This behavior, which also caused a large variation in nanocrystal size after annealing at higher temperatures, is discussed with respect to the nanoscale microstructural heterogeneity after initial deformation processing.     

Effect of rare earth on the microstructures and properties of a low expansion superalloy

A new Fe-Ni-Co-Nb-Ti-Si superalloy containing trace additions of selective rare earths and having good combination of very low thermal expansion coefficient, high-resistance to stress accelerated grain boundary oxygen embrittlement and fairly good notch-bar rupture strength has been successfully developed. The resistance to oxidation for long time exposure at high-temperatures and the stress rupture life has been improved significantly with trace yttrium addition. The microstructures of the alloys have been studied by means of analytical electron microscopy, chemical and X-ray analysis techniques. The results reveal that the trace yttrium segregates in the strengthening phase with platelet morphology, and helps in transforming A(3)B type epsilon phase into A(5)B type H. The morphology and crystal structures of the grain boundary phases also change with selective additions of rare earth elements. Compared with those in the conventional alloy, the platelet precipitates in the yttrium-containing alloy densely segregate within the grains and along the grain boundaries with smaller size. The segregation of the platelet precipitates within the grains is helpful in improving the strength of the alloy. In addition, its precipitation along the grain boundaries can improve the resistance to stress accelerated grain boundary oxidation and stress rupture property of the alloy and thereby contribute to its temperature stability.     

磷离子注入纳米金刚石薄膜的n型导电性能与微结构研究

系统研究了磷离子注入并在不同温度退火后的纳米金刚石薄膜的微结构和电学性能.研究表明,当退火温度达到800 ℃以上时,薄膜呈良好的n型电导.Raman光谱和电子顺磁共振谱的结果表明,薄膜中金刚石相含量越高和完整性越好,薄膜电阻率越低. 这说明纳米金刚石晶粒为薄膜提供了电导.1000 ℃退火后,薄膜晶界中的非晶石墨相有序度提高,碳悬键数量降低,薄膜电阻率升高.薄膜导电机理为磷离子注入的纳米金刚石晶粒提供了n型电导,非晶碳晶界为其电导提供了传输路径. 关键词： 纳米金刚石薄膜 n型 磷离子注入     

Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method

KrF excimer laser annealing on ultrathin hydrogenated amorphous Si films with various initial Si thicknesses is carried out to obtain a single layer of nanocrystalline Si structures. It is found that Si nanograins can be obtained with the area density as high as 10^11 cm^-2 under the irradiation with suitable laser fluence. Raman and planar transmission electron microscopy are used to characterize the formation process of Si nanocrystals from amorphous phase. Moreover, a strong photoluminescence is observed at room temperature from well-relaxed nanocrystalline Si structures.     

Production, structure, and microhardness of nanocrystalline Ni-Mo-B alloys

Radiography, differential scanning calorimetry, luminescence and high-resolution electron microscopy are used to study the production, nanocrystalline structure, stability, and microhardness of alloys from the Ni-Mo-B system containing from 27 at. % to 31.5 at. % Mo and 10 at. % B. All studies of these alloys indicated that annealing at 600 °C leads to the creation of a granular phase consisting of FCC nanocrystallites with average grain sizes of 15–25 nm, depending on the chemical composition of the alloy. Annealing these nanocrystalline samples isothermally at a temperature of 600 °C has no appreciable effect on the grain size. Structurally, the nanocrystalline phase consists of grains of an FCC solid solution of Mo and B in Ni, dispersed in an amorphous matrix that isolates them from one another. The lattice parameters of the FCC nanocrystallites depend on the alloy composition and the duration of their isothermal anneal. Within this latter time, molybdenum and boron atoms diffuse from the FCC solid-solution lattice into the surrounding amorphous matrix. The stability of the nanocrystalline structure is determined by the thermal stability of the amorphous matrix, whose crystallization temperature increases with the isothermal annealing time due to enrichment by boron and molybdenum. As the structure forms, the alloy becomes harder as the nanocrystalline grains grow in size. This relation between hardness and grain size, which is opposite to the Hall-Petch law, is explained by hardening of the amorphous matrix due to changes in its chemical composition. Fiz. Tverd. Tela (St. Petersburg) 40, 10–16 (January 1998)     

Grain growth process of two-phase nanocrystalline soft magnetic materials

In order to clarify the origin of the high thermal stability of the microstructure in bcc-Fe/amorphous two-phase nanocrystalline soft magnetic materials, we have investigated the changes in the magnetic and microstructural properties upon isothermal annealing at 898 K for an Fe₈₉Zr₇B₃Cu₁ alloy by means of transmission electron microscopy, Mössbauer spectroscopy and DC magnetometry. The mean grain size was found to remain almost unchanged at the early stage of annealing. However, rapid grain coarsening was evident at an annealing time of 7.2 ks where the intergranular amorphous phase begins to crystallize into Fe₂₃Zr₆. The grain growth process with a kinetic exponent of 1.6 is observed for the growth process beyond this annealing time, reflecting the disappearance of the intergranular amorphous phase. Our results confirm that the thermal stability of the bcc-Fe/amorphous two-phase nanocrystalline soft magnetic alloys is governed by the residual amorphous phase.     

Solute distribution in nanocrystalline Ni–W alloys examined through atom probe tomography

Atom probe tomography is used to observe the solute distribution in electrodeposited nanocrystalline Ni–W alloys with three different grain sizes (3, 10 and 20?nm) and the results are compared with atomistic computer simulations. The presence of grain boundary segregation is confirmed by detailed analysis of composition fluctuations in both experimental and simulated structures, and its extent quantified by a frequency distribution analysis. In contrast to other nanocrystalline alloys previously examined by atom probe tomography, such as Ni–P, the present nanocrystalline Ni–W alloys exhibit only a subtle amount of solute segregation to the intergranular regions.     

Influence of air annealing on the structural, morphological, optical and electrical properties of chemically deposited ZnSe thin films

Zinc selenide nanocrystalline thin films are grown onto amorphous glass substrate from an aqueous alkaline medium, using chemical bath deposition (CBD) method. The ZnSe thin films are annealed in air for 4 h at various temperatures and characterized by structural, morphological, optical and electrical properties. The as-deposited ZnSe film grew with nanocrystalline cubic phase alongwith some amorphous phase present in it. After annealing metastable nanocrystalline cubic phase was transformed into stable polycrystalline hexagonal phase with partial conversion of ZnSe into ZnO. The optical band gap, E_g, of as-deposited film is 2.85 eV and electrical resistivity of the order of 10⁶-10⁷ Ω cm. Depending upon annealing temperature, decrease up to 0.15 eV and 10² Ω cm were observed in the optical band gap, E_g, and electrical resistivity, respectively.     

Temperature dependence of the Mössbauer spectra of amorphous and nanocrystallized Fe86Zr7Cu1B6

Mössbauer measurements have been performed on amorphous and nanocrystalline alloy ribbons of nominal composition Fe₈₆Zr₇Cu₁B₆. The nanocrystalline samples were obtained by annealing the as-quenched alloy at different temperatures in the range between 650 and 870 K. Mössbauer spectra of the as-quenched amorphous sample have been recorded at 77 K, room temperature and above the Curie temperature (330 K) at 360 K. We have also performed Mössbauer measurements at room temperature in the nanocrystalline alloys to characterize the phases that appear after the annealing and their relative concentration. The as-quenched sample spectra reveal the existence of two inequivalent sites for Fe. Such a feature is also observed in the remaining amorphous phase of the annealed samples. In the first steps of crystallization, -Fe precipitates and its concentration increases with the annealing temperature. The experimental results suggest that the composition of the whole amorphous phase does not suffer large changes during crystallization.     

PHOTOLUMINESCENCE OF NANOCRYSTALLINE SiC FILMS PREPARED BY RF MAGNETRON SPUTTERING

Amorphous SiC films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200℃ for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous SiC is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the SiC nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline SiC films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.     

Microstructure and photoluminescence of Er-doped SiOx films synthesized by ion beam assisted deposition

Er-doped SiO_x films were synthesized at 500℃ by ion beam assisted deposition technique and annealed at 800 and 1100℃ for 2h in the air atmosphere. The analysis by using energy dispersive x-ray spectroscopy showed that the ratio of Si to O decreased from 3 in the as-deposited films to about 1 in the annealed films. The investigation by using transmission electron microscopy and x-ray diffraction indicated that annealing induces a microstructure change from amorphous to crystalline. The grain sizes in the films were about 10 and 40nm when annealed at 800 and 1100℃, respectively. The films annealed at temperatures of 800 and 1100℃ exhibited a sharp photoluminescence (PL) at 1.533μm from the Er centres when pumped by 980nm laser. The influence of microstructure and grain size on the PL from Er-doped SiO_x films has been studied and discussed.     

Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi<Subscript>1.5</Subscript>Zn<Subscript>1.0</Subscript>Nb<Subscript>1.5</Subscript>O<Subscript>7</Subscript> thin films

Bismuth Zinc niobate (Bi_1.5Zn_1.0Nb_1.5O₇) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures. The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36–2.53 (at a wavelength of 750 nm) with an optical absorption edge value of 3.30–3.52 eV and a maximum dielectric constant of 11 at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase in band gap, refractive index and microwave dielectric constant.     

Microstructural and compositional studies of liquid-phase deposition derived PbTiO3 thin films on LaNiO3 substrates

PbTiO₃ thin films were successfully deposited on the LaNiO₃ (LNO) substrates by the liquid-phase deposition (LPD) method and post-annealing at various temperatures. The structure, morphology and composition of the films were investigated by some analytical techniques. The as-deposited films are amorphous and composed of densely packed spherical particles. The films with the grain size of 180 nm start to decompose and crystallize into perovskite structure at 450 °C and show a perovskite single phase with tetragonal structure after annealing at 650 °C. X-ray photoelectron spectroscopy (XPS) analysis reveals that the as-deposited film contains fluorine and carbon as major impurities. Fluorine could be completely eliminated by annealing at 650 °C in air.     

Formation and structure of nanocrystals in an Al86Ni11Yb3 alloy

The formation and structure of the nanocrystalline phase in the Al₈₆Ni₁₁Yb₃ alloy are investigated using differential scanning calorimetry (DSC), transmission electron and high-resolution electron microscopy, and x-ray diffraction. The nanocrystalline phase is formed upon controlled crystallization of the amorphous alloy prepared by quenching of the melt on a rapidly moving substrate. It is revealed that the nanocrystalline alloy consists of aluminum nanocrystals (5–12 nm in size) randomly distributed in the amorphous matrix. The maximum fraction of the nanocrystalline phase does not exceed 25%. The nanocrystal size substantially increases at the initial stage of isothermal treatment (at 473 K) and then changes insignificantly. It is found that nanocrystals are usually free of defects. However, some nanocrystals have a more complex microstructure with twins and dislocations. The size distributions of nanocrystals are determined at several durations of isothermal treatment. It is demonstrated that the nucleation of nanocrystals predominantly occurs through the heterogeneous mechanism. The experimental distributions are compared with those obtained from a computer simulation. The activation energy of crystallization, the time-lag, and the coefficient of ytterbium diffusion in the alloy are estimated     

非晶合金Fe73.5Cu1Nb3Si13.5B9的激波晶化及其特征

 研究了非晶合金Fe_73.5Cu₁Nb₃Si_13.5B₉（FINEMET）的激波晶化。与退火晶化比较,激波晶化具有一系列鲜明特征,这些特征是固态下扩散性相变理论难以解释的,有深刻的物理内涵。